SIDE LOOK PACKAGE PIN PHOTODIODE MID-85H1C Description Package Dimensions The MID-85H1C is a photodiode mounted in special 5.00 (.200) dark plastic package and suitable for the IRED Unit: mm ( inches ) (850nm/880nm) Type. 6.60 (.260) 4.00 (.160) 4.00 (.160) 22.60 TYP. (.890) RADIANT SENSITIVE AREA 16.00 MIN. (.630) Features l High photo sensitivity l Low junction capacitance l High cut -off frequency l Fast switching time l Suitable for the IRED 850nm/880nm type 0.50 TYP. (.020) 1.00MIN. (.040) 2.54 (.100) C A Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.0 mm (.040") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Maximum Rating Unit 100 mW o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55oC to +100oC Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 02/04/2002 MID-85H1C Optical-Electrical Characteristics @ TA=25oC Parameter Test Conditions Symbol Min. V(BR)R 30 IR=0.1mA Reverse Break Down Voltage Typ. Max. Unit V Ee=0 VR=10V Reverse Dark Current ID 30 nA Ee=0 λ=850nm Open Circuit Voltage Ee=0.1mW/cm VOC 350 mV nsec 2 Rise Time VR =10V λ=850nm Tr 50 Fall Time RL=50Ω Tf 50 Light Current VR =5V, λ=850nm IL 9 µA CT 25 pF Ee=0.1mW/cm 2 VR =3V, f=1MHz Total Capacitance Ee=0 Typical Optical-Electrical Characteristic Curves 100 Capacitance C - pF Dark Current IR - pA 4000 3000 2000 1000 0 60 40 20 0 0 5 10 15 0.01 20 Reverse Volatage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE TEMP=25oC, Ee=0 mW/cm2 0.1 1 10 100 Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE F=1MHz ; Ee=0mW/cm2 200 1000 Dark Current IR - nA Total Power Dissipation mW 80 150 100 50 0 100 10 1 0.1 0 20 40 60 80 100 Ambient Temperature -oC FIG.3 TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE 0 20 40 60 80 100 Ambient Temperature - oC FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE VR=10V, Ee=0 mw/cm2 Unity Opto Technology Co., Ltd. 02/04/2002 MID-85H1C 100 Ip - µA 1000 80 100 60 Photocurrnet Relative Spectral Sensitivity Typical Optical-Electrical Characteristic Curves 40 20 0 10 1 0.1 700 800 900 1000 1100 1200 Wavelength-nm FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH 0.01 0.1 1 10 Irradiance Ee (mW/cm2) FIG.6 PHOTOCURRENT VS. IRRADIANCE = 850 nm Relative Sensitivity 0° 10° 20° 30° 40° 1.0 0.9 50° 60° 70° 80° 90° 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG.7 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002