ADPOW APL1001J N-channel enhancement mode high voltage power mosfet Datasheet

S
S
D
G
27
2
T-
D
G
SO
APL1001J
S
ISOTOP®
18.0A 0.60W
1000V
"UL Recognized" File No. E145592 (S)
POWER MOS IV
®
SINGLE DIE ISOTOP® PACKAGE
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APL1001J
UNIT
1000
Volts
Drain-Source Voltage
18
Continuous Drain Current @ TC = 25°C
1
Amps
IDM, lLM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
Volts
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.16
W/°C
PD
TJ,TSTG
TL
72
and Inductive Current Clamped
Y
R
A
N
I
M
I
L
E
R
P
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
1000
Volts
ID(ON)
On State Drain Current
18
Amps
Symbol
RDS(ON)
IDSS
IGSS
VGS(TH)
2
(VDS > I D(ON) x R DS(ON) Max, VGS = 8V)
Drain-Source On-State Resistance
2
TYP
MAX
0.60
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
250
Ohms
µA
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage
UNIT
2
(VDS = VGS, ID = 2.5mA)
±100
nA
4
Volts
MAX
UNIT
THERMAL CHARACTERISTICS
Characteristic
MIN
RQJC
Junction to Case
RQCS
Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
TYP
0.24
°C/W
0.06
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-5904 Rev A 3-2000
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APL1001J
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
6100
Coss
Output Capacitance
VDS = 25V
780
C rss
Reverse Transfer Capacitance
f = 1 MHz
285
Turn-on Delay Time
VGS = 15V
14
VDD = 0.5 VDSS
14
ID = ID [Cont.] @ 25°C
60
RG = 0.6W
14
td(on)
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
MAX
UNIT
pF
ns
SAFE OPERATING AREA CHARACTERISTICS
Symbol Characteristic
SOA1
Safe Operating Area
Test Conditions / Part Number
MIN
TYP
VDS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C
300
375
MAX
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
0.005
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
q
0.3
0.02
0.01
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
0.001
10-5
t1
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
050-5904 Rev A 3-2000
Hex Nut M4
(4 places)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
UNIT
Watts
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