MOSFET SMD Type P-Channel MOSFET AO3403 (KO3403) SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 1 0.55 ● ID =-2.6 A (VGS =-10V) ● RDS(ON) ＜ 115mΩ (VGS =-10V) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● VDS (V) =-30V 2 ● RDS(ON) ＜ 150mΩ (VGS =-4.5V) +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1.1 +0.2 -0.1 ● RDS(ON) ＜ 200mΩ (VGS =-2.5V) D 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead ID IDM Ta = 25℃ Ta = 70℃ t ≤ 10s Steady-State PD RthJA Unit V -2.6 -2.2 A -13 1.4 0.9 W 90 125 RthJL 80 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO3403 (KO3403) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS VDS=0V, VGS=±12V VGS(th) VDS=VGS ID=-250μA Gate Threshold Voltage Min Typ On state drain current RDS(On) VDS=-30V, VGS=0V -1 VDS=-30V, VGS=0V, TJ=55℃ -5 ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge VGS=-10V, ID=-2.6A -0.6 200 VGS=-10V, VDS=-5V VDS=-5V, ID=-2.6A 8 260 VGS=0V, VDS=-15V, f=1MHz VGS= -10V, VDS=-15V, ID=-2.6A 4 12 5.9 7.2 2.8 3.5 0.7 Turn-Off DelayTime td(off) IS VSD VGS=-10V, VDS=-15V, RL=5.76Ω , RGEN=3Ω Marking A3* www.kexin.com.cn Ω nC 3.5 ns 20 5 IF=-2.6A, dI/dt=100A/μs IS=-1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking pF 20 VGS=0V, VDS=0V, f=1MHz tr Qrr S 315 37 Turn-On Rise Time Maximum Body-Diode Continuous Current mΩ A 6 Diode Forward Voltage 2 -13 1 Body Diode Reverse Recovery Charge V VGS=-2.5V, ID=-1A Qgd trr -1.4 150 td(on) Body Diode Reverse Recovery Time nA 200 TJ=125℃ Turn-On DelayTime tf ±100 VGS=-4.5V, ID=-2A Gate Drain Charge Turn-Off Fall Time uA 115 Qg Qgs Unit V VGS=-10V, ID=-2.6A Static Drain-Source On-Resistance Max -30 ID=-250μA, VGS=0V 11.5 15 4.5 nC -1.5 A -1 V MOSFET SMD Type P-Channel MOSFET AO3403 (KO3403) ■ Typical Characterisitics 15 -10V 12 10 -4.5V VDS=-5V 9 6 -2.5V -ID(A) -ID (A) 8 -3V -6V 6 VGS=-2V 3 4 125°C 2 25°C 0 0 0 1 2 3 4 0 5 210 1 1.5 2 2.5 3 3.5 4 2 190 Normalized On-Resistance VGS=-2.5V 170 RDS(ON) (mΩ Ω) 150 VGS=-4.5V 130 110 90 VGS=-10V 70 VGS=-10V ID=-2.6A 1.8 1.6 1.4 VGS=-4.5V 5 ID=-2A 2 1.2 VGS=-2.5V ID=-1A 1 0.8 50 0 1 0 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 250 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 ID=-2.6A 1.0E+01 200 1.0E+00 125°C -IS (A) RDS(ON) (mΩ Ω) 0.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 150 25°C 100 1.0E-01 125°C 25°C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 50 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO3403 (KO3403) ■ Typical Characterisitics 10 8 Ciss 300 Capacitance (pF) -VGS (Volts) 400 VDS=-15V ID=-2.6A 6 4 200 Coss 100 2 0 Crss 0 0 1 2 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TA=25°C 1000 1.0 10µs RDS(ON) limited 100µs 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C Power (W) -ID (Amps) 10.0 10 10s DC 1 0.0 0.01 0.1 1 -VDS (Volts) 10 0.00001 100 Zθ JA Normalized Transient Thermal Resistance 1 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient Figure 9: Maximum Forward Biased Safe Operating Area 10 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 www.kexin.com.cn 10 100 1000