MOSFET SMD Type N-Channel MOSFET AO6402A-HF (KO6402A-HF) ( SOT-23-6 ) Unit: mm +0.1 0.4 -0.1 ● VDS (V) = 30V 6 5 4 1 2 3 0.4 ■ Features ● RDS(ON) ＜ 24mΩ (VGS = 10V) ● RDS(ON) ＜ 35mΩ (VGS = 4.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a 0.55 +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● ID = 7.5 A (VGS = 10V) +0.02 0.15 -0.02 +0.01 -0.01 Pb−Free Lead Finish +0.1 1.1 -0.1 +0.2 -0.1 0-0.1 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain +0.1 0.68 -0.1 D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range ID IDM TA=25℃ TA=70℃ t ≤ 10s Steady-State PD RthJA Unit V 7.5 6 A 64 2 1.28 W 62.5 110 RthJL 68 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO6402A-HF (KO6402A-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250 uA Static Drain-Source On-Resistance RDS(On) Min Typ 30 ID=250μA, VGS=0V VDS=30V, VGS=0V 1 VDS=30V, VGS=0V, TJ=55℃ 5 1.5 gFS VDS=5V, ID=7.5A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge (10V) Total Gate Charge (4.5V) 64 A 20 373 VGS=0V, VDS=15V, f=1MHz S 448 pF 67 41 VGS=0V, VDS=0V, f=1MHz Qg VGS=10V, VDS=15V, ID=7.5A 2 2.8 7.2 11 3.5 5 1.3 Qgs Gate Drain Charge Qgd 1.7 Turn-On DelayTime td(on) 4.5 6.5 Turn-On Rise Time tr 2.7 4.5 Turn-Off DelayTime td(off) 14.9 23 VGS=10V, VDS=15V, RL=2Ω,RG=3Ω Turn-Off Fall Time tf 2.9 5.5 Body Diode Reverse Recovery Time trr 10.5 12.6 Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS VSD IF= 7.5A, dI/dt= 100A/us IS=1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking Marking 42** F www.kexin.com.cn mΩ 35 Gate Source Charge Diode Forward Voltage 2 V VGS=10V, ID=7.5A Forward Transconductance Rg 2.6 24 VGS=10V, VDS=5V Gate Resistance nA 34 TJ=125℃ uA ±100 VGS=10V, ID=7.5A ID(ON) Unit V VGS=4.5V, ID=5.6A On State Drain Current Max 4.5 Ω nC ns 5.4 nC 2.5 A 1 V MOSFET SMD Type N-Channel MOSFET AO6402A-HF (KO6402A-HF) ■ Typical Characterisitics 60 15 10V 50 6V 40 9 4.5V ID(A) ID (A) VDS=5V 12 30 20 6 VGS=3.5V 3 10 0 0 0 1 2 3 4 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 4.5 Normalized On-Resistance 1.8 40 VGS=4.5V 35 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics 45 30 25 20 15 VGS=10V 1.6 VGS=10V Id=7.5A 1.4 1.2 1 VGS=4.5V Id=5.6A 0.8 10 0.6 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 ID=7.5A 50 1.0E+00 1.0E-01 40 IS (A) RDS(ON) (mΩ Ω) 25°C 125°C 125°C 30 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO6402A-HF (KO6402A-HF) ■ Typical Characterisitics 600 10 VDS=15V ID=7.5A 500 Capacitance (pF) VGS (Volts) 8 6 4 300 100 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1s DC 1 VDS (Volts) 10 . Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 30 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 20 10 10s 0.0 0.1 Power (W) 100µs 1.0 0.01 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C RDS(ON) limited 0.1 5 30 10µs 10.0 Crss 0 100.0 ID (Amps) Coss 200 2 Zθ JA Normalized Transient Thermal Resistance Ciss 400 0 100 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 4 0.0001 www.kexin.com.cn 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000