Diodes MBR1050CT 10a schottky barrier rectifier Datasheet

MBR1030CT - MBR1060CT
10A SCHOTTKY BARRIER RECTIFIER
Features
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·
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·
·
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Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
B
·
·
·
·
M
C
D
K
A
1
2
3
E
J
Mechanical Data
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·
TO-220AB
L
G
N
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 2.24 grams (approx.)
Mounting Position: Any
Marking: Type Number
H H
P
Pin 1
Pin 2
Pin 3
Case
Dim
Min
Max
A
14.22
15.88
B
9.65
10.67
C
2.54
3.43
D
5.84
6.86
E
¾
6.35
G
12.70
14.73
H
2.29
2.79
J
0.51
1.14
K
3.53Æ
4.09Æ
L
3.56
4.83
M
1.14
1.40
N
0.30
0.64
P
2.03
2.92
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR
Symbol 1030CT
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ TC = 105°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Repetitive Peak Reverse Surge Current
Forward Voltage Drop
@ t £ 2.0ms
MBR
1040CT
MBR
1045CT
MBR
1050CT
MBR
1060CT
Unit
VRRM
VRWM
VR
30
35
40
45
50
60
V
VR(RMS)
21
24.5
28
31.5
35
42
V
IO
10
A
IFSM
125
A
IRRM
1.0
A
@ IF = 5.0A, TC = 125°C
@ IF = 5.0A, TC = 25°C
@ IF = 10A, TC = 25°C
VFM
@ TC = 25°C
@ TC = 125°C
IRM
0.1
15
Cj
150
pF
RqJC
30
K/W
dV/dt
1000
V/ms
Tj, TSTG
-65 to +150
°C
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
Operating and Storage Temperature Range
Notes:
MBR
1035CT
0.57
0.70
0.84
0.70
0.80
0.95
V
mA
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30027 Rev. A-2
1 of 2
MBR1030CT-MBR1060CT
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FWD CURRENT (A)
10
8
6
4
2
0
0
50
100
100
MBR1030CT - MBR1045CT
10
MBR1050CT / MBR1060CT
1.0
0.1
150
0
0.4
0.8
1.2
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
300
1000
250
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
200
150
100
50
0
Tj = 25°C
Pulse Width = 300µs
2% Duty Cycle
100
10
1
10
0.1
100
1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
DS30027 Rev. A-2
Tj = 25°C
f = 1.0MHz
2 of 2
MBR1030CT-MBR1060CT
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