JIEJIE MICROELECTRONICS CO. , Ltd JST139 Series 16A TRIACs Rev.3.0 DESCRIPTION: JST139 series triacs with low holding and latching current are especially recommended for use on middle and small resistance type power load. 12 12 3 3 TO-220C JST139F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink 2 complying with UL standards (File ref: E252906). 1 MAIN FEATURES Symbol Value Unit IT(RMS) 16 A VDRM /VRRM 600 and 800 V 3 TO-220F Insulated TO-263 T1(1) T2(2) G(3) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Tstg -40-150 ℃ Tj -40-125 ℃ Repetitive peak off-state voltage(Tj=25℃) VDRM 600/800 V Repetitive peak reverse voltage(Tj=25℃) VRRM 600/800 V Non repetitive surge peak Off-state voltage VDSM VDRM + 100 V Non repetitive peak reverse voltage VRSM VRRM + 100 V IT(RMS) 16 A ITSM 140 A I2t 98 A2s dI/dt 50 A/μs IGM 2 A Storage junction temperature range Operating junction temperature range TO-220C(TC=100℃) RMS on-state current TO-220F(Ins) (TC=85℃) TO-263 (TC=110℃) Non repetitive surge peak on-state current (tp=20ms) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG=2×IGT) Peak gate current TEL：+86-513-83639777 - 1 / 6- http://www.jjwdz.com JST139 Series JieJie Microelectronics CO. , Ltd Average gate power dissipation PG(AV) 0.5 W PGM 5 W Peak gate power ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Value Symbol Test Condition Quadrant Unit Ⅰ-Ⅱ-Ⅲ IGT VGT VGD VD=VDRM Tj=125℃ RL=3.3KΩ F 5 10 25 10 25 70 mA ALL MAX 1.5 V ALL MIN 0.2 V Ⅰ- Ⅲ IL IG=1.2IGT IH IT=100mA VD=2/3VDRM Gate Open Tj=125℃ dV/dt E MAX Ⅳ VD=12V RL=33Ω D Ⅱ- Ⅳ 15 30 40 20 40 60 MAX 10 25 30 mA MIN 5 10 50 V/μs MAX mA STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Parameter ITM=20A tp=380μs VD=VDRM VR=VRRM Value(MAX) Unit Tj=25℃ 1.65 V Tj=25℃ 5 μA Tj=125℃ 1 mA Value Unit THERMAL RESISTANCES Symbol Rth(j-c) Parameter junction to case(AC) TEL：+86-513-83639777 TO-220C 3.0 TO-220F(Ins) 3.7 TO-263 2.1 - 2 / 6- ℃/W http://www.jjwdz.com JST139 Series JieJie Microelectronics CO. , Ltd ORDERING INFORMATION J ST 139 C -600 E D:IGT1-3≤5mA IGT4≤10mA E:IGT1-3≤10mA IGT4≤25mA F:IGT1-3≤25mA IGT4≤70mA JieJie Microelectronics Co.,Ltd 600:VDRM /VRRM≥600V 800:VDRM /VRRM≥800V TRIACs IT(RMS):16A F:TO-220F(Ins) C:TO-220C E:TO-263 PACKAGE MECHANICAL DATA TEL：+86-513-83639777 - 3 / 6- http://www.jjwdz.com JST139 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA Dimensions E Millimeters Min. A C2 H D L3 F Φ Ref. m .6m 3 x Ma L1 C3 L2 TO-220C Min. Typ. Max. 4.60 0.173 0.181 B 0.70 0.90 0.028 0.035 C 0.45 0.60 0.018 0.024 C2 1.23 1.32 0.048 0.052 C3 2.20 2.60 0.087 0.102 D 8.90 9.90 0.350 0.390 E 9.90 10.3 0.390 0.406 F 6.30 6.90 0.248 0.272 29.8 1.102 2.54 28.0 0.1 3.39 L1 C Max. 4.40 H B Inches A G G Typ. 1.173 0.133 L2 1.14 1.70 0.045 0.067 L3 2.65 2.95 0.104 0.116 Φ 3.6 Ref. Millimeters 0.142 Dimensions E 3. Min. A C2 F L3 Φ ax M m 5m H D V1 L1 C3 L2 TO-220F Ins TEL：+86-513-83639777 4.80 0.173 0.80 0.83 0.029 0.75 0.019 Min. Typ. Max. 4.40 0.74 C 0.48 C2 2.40 2.70 0.094 0.106 C3 2.60 3.00 0.102 0.118 0.189 0.031 0.033 0.030 D 8.80 9.30 0.346 0.366 E 9.70 10.3 0.382 0.406 F 6.40 7.00 0.252 0.276 29.8 1.102 2.54 28.0 0.1 3.63 L1 L2 G Max. A H C Typ. B G B Inches 0.143 1.70 1.14 1.173 0.045 0.067 L3 3.30 0.130 V1 45° 45° - 4 / 6- http://www.jjwdz.com JST139 Series JieJie Microelectronics CO. , Ltd FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature P(w) 24 IT(RMS) (A) 24 20 20 16 16 12 12 8 8 4 4 0 0 4 8 IT(RMS) (A) 12 16 TO-220C FIG.3: Surge peak on-state current versus number of cycles TO-263 TO-220F(Ins) Tc (℃) 0 0 20 α=180° 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) ITSM (A) 100 140 t=20ms One cycle 120 Tj=Tjmax 100 80 10 60 40 Tj=25℃ 20 0 1 10 Number of cycles 100 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms, and corresponging value of I t (dI/dt < 50A/μs) 1 0 1 2 VTM (V) 3 4 5 FIG.6: Relative variations of gate trigger current versus junction temperature 2 ITSM (A), I2t (A2 s) 2000 IGT(Tj) /IGT(Tj=25℃) 4.0 1000 IGT4 ITSM 3.0 IGT3 dI/dt 2.0 I2 t 100 1.0 10 0.01 IGT1&IGT2 tp(ms) 0.1 TEL：+86-513-83639777 1 10 20 - 5 / 6- 0.0 -40 Tj (℃) -20 0 20 40 60 80 100 120 140 http://www.jjwdz.com JST139 Series JieJie Microelectronics CO. , Ltd FIG.7: Relative variations of holding current versus junction temperature FIG.8: Relative variations of latching current versus junction temperature IH(Tj) /IH(Tj=25℃) IL(Tj) /IL(Tj=25℃) 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.5 IH 1.0 1.0 0.5 0.0 -40 IL 0.5 -20 0 20 Tj (℃) 40 60 80 100 120 140 0.0 -40 -20 0 20 Tj (℃) 40 60 80 100 120 140 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the third version which is made in 10-June-2015. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. TEL：+86-513-83639777 - 6 / 6- http://www.jjwdz.com