EFS1J WTE POWER SEMICONDUCTORS Pb 1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss A Super-Fast Recovery Time F Plastic Case Material has UL Flammability Classification Rating 94V-O C H G E SMA/DO-214AC Dim Min Max 2.50 2.90 A 4.00 4.60 B 1.20 1.60 C 0.152 0.305 D 4.80 5.28 E 2.00 2.44 F 0.051 0.203 G 0.76 1.52 H All Dimensions in mm Mechanical Data ! ! ! ! ! ! Case: SMA/DO-214AC, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.064 grams (approx.) Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 Maximum Ratings and Electrical Characteristics Characteristic D @TA=25°C unless otherwise specified Symbol EFS1J Unit VRRM VRWM VR 600 V VR(RMS) 420 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM 1.25 V @TA = 25°C @TA = 100°C IRM 5.0 100 µA Reverse Recovery Time (Note 1) trr 50 nS Typical Junction Capacitance (Note 2) Cj 8 pF RJL 35 °C/W Tj, TSTG -65 to +150 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Peak Reverse Current At Rated DC Blocking Voltage @TL = 75°C Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. EFS1J 1 of 4 © 2006 Won-Top Electronics IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FWD RECTIFIED CURRENT (A) 1.00 0.75 0.50 0.25 Single phase half wave Resistive or Inductive load 0 0 25 50 75 100 125 150 Tj = 25°C Pulse width = 300µs 10 1.0 0.1 0.01 0 175 0.4 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 30 100 Tj = 25°C f = 1.0MHz Pulse width 8.3 ms single half-sine-wave (JEDEC method) Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) TL , LEAD TEMPERATURE ( ° C) Fig. 1 Forward Current Derating Curve 0.2 20 10 10 1 0 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current 100 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance trr +0.5A 50Ω NI (Non-inductive) 10Ω NI Device Under Test (-) 0A (+) Pulse Generator (Note 2) 50V DC Approx (-) 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit EFS1J 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION RECOMMENDED FOOTPRINT 0.050 MIN (1.27 MIN) WTE EFS1J Cathode WTE EFS1J 0.058 MIN (1.47 MIN) = Polarity Band = Manufacturer’s Logo = Device Number 0.083 MAX (2.11 MAX) inches(mm) PACKAGING INFORMATION TAPE & REEL Direction of Unreeling 4mm 330mm 12mm 4mm 1.6mm 12mm Product ID Label Reel Diameter (mm) Quantity (PCS) Inner Box Size L x W x H (mm) Quantity (PCS) Carton Size L x W x H (mm) Quantity (PCS) Approx. Gross Weight (KG) 330 7,500 340 x 337 x 45 15,000 370 x 370 x 420 120,000 17.5 Note: 1. Paper reel, white or gray color. 2. Components are packed in accordance with EIA standard 481-1 and 481-2. EFS1J 3 of 4 © 2006 Won-Top Electronics ORDERING INFORMATION Product No. EFS1J-T3 1. 2. Package Type Shipping Quantity SMA 7500/Tape & Reel Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. To order RoHS / Lead Free version (with Lead Free finish), add “-LF” suffix to part number above. For example, EFS1J-T3-LF. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: [email protected] Internet: http://www.wontop.com We power your everyday. EFS1J 4 of 4 © 2006 Won-Top Electronics