IRFD9020 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt rating -60 RDS(on) () VGS = -10 V • Repetitive avalanche rated 0.28 Qg max. (nC) 19 • For automatic insertion Qgs (nC) 5.4 • End stackable 11 • P-channel Qgd (nC) Configuration • 175 °C operating temperature Single • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S HVMDIP DESCRIPTION G S Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. G D D P-Channel MOSFET ORDERING INFORMATION Package HVMDIP Lead (Pb)-Free IRFD9020PbF ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 VGS at -10 V Continuous Drain Current Pulsed Drain Current TA = 25 °C TA = 100 °C a ID IDM Linear Derating Factor Single Pulse Avalanche Energy b EAS UNIT V -1.6 -1.1 A -13 0.0083 W/°C 140 mJ Current a IAR -1.6 A Repetitive Avalanche Energy a EAR 0.13 mJ Repetitive Avalanche Maximum Power Dissipation TA = 25 °C Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d For 10 s PD 1.3 W dV/dt -4.5 V/ns TJ, Tstg -55 to +175 300 °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -25 V, starting TJ = 25 °C, L = 15 mH, Rg = 25 , IAS = -3.2 A (see fig. 12). c. ISD -11 A, dI/dt -140 A/ms, VDD VDS, TJ 175 °C. d. 1.6 mm from case. S16-1506-Rev. D, 01-Aug-16 Document Number: 90170 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD9020 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL TYP. MAX. UNIT RthJA - 120 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VDS VGS = 0 V, ID = - 250 μA -60 - - V VDS/TJ Reference to 25 °C, ID = -1 mA - - 0.056 - V/°C VGS(th) VDS = VGS, ID = -1 μA -2.0 - -4.0 V nA VGS = 20 - - 100 VDS = -60 V, VGS = 0 V - - - 100 VDS = -48 V, VGS = 0 V, TJ = 150 °C - - - 500 - - 0.28 1.3 - - S IGSS IDSS RDS(on) gfs ID = - 0.96 A b VGS = -10 V VDS = -25 V, ID = - 0.96 Ab μA Dynamic Input Capacitance Ciss Output Capacitance Coss VGS = 0 V, VDS = -25 V, f = 1.0 MHz, see fig. 5 - 570 - - 360 - - 65 - - - 19 - - 5.4 pF Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 11 Turn-On Delay Time td(on) - 13 - - 68 - - 15 - - 29 - - 4.0 - - 6.0 - - - - 1.6 - - - 13 - - - 6.3 V - 100 200 ns - 0.32 0.64 μC Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS VGS = -10 V ID = - 11 A, VDS = -48 V, see fig. 6 and 13 b VDD = - 30 V, ID = -11 A, Rg = 18 , RD = 2.5, see fig. 10b Between lead, 6 mm (0.25") from package and center of die contact D nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = -1.6 A, VGS = 0 V b TJ = 25 °C, IF = - 11A, di/dt = 100 A/μs b Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S16-1506-Rev. D, 01-Aug-16 Document Number: 90170 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD9020 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) TA = 25 °C Fig. 1 - Typical Output Characteristics, TA = 25 °C Fig. 3 - Typical Transfer Characteristics TA = 175 °C Fig. 2 - Typical Output Characteristics, TA = 175 °C S16-1506-Rev. D, 01-Aug-16 Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 90170 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD9020 www.vishay.com Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Vishay Siliconix Fig. 7 - Typical Source-Drain Diode Forward Voltage TA = 25 °C TJ = 150 °C SINGLE PULSE Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S16-1506-Rev. D, 01-Aug-16 Fig. 8 - Maximum Safe Operating Area Document Number: 90170 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD9020 www.vishay.com Vishay Siliconix RD VDS VGS D.U.T. -ID, Drain Current (A) Rg +VDD - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit td(on) td(off) tf tr VGS 10 % 90 % VDS TA, Ambient Temperature (°C) Fig. 10b - Switching Time Waveforms Thermal Response (ZthJA) Fig. 9 - Maximum Drain Current vs. Ambient Temperature t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IAS L Vary tp to obtain required IAS VDS D.U.T. Rg VDS + V DD VDD IAS - 10 V tp 0.01 Ω tp VDS Fig. 12a - Unclamped Inductive Test Circuit S16-1506-Rev. D, 01-Aug-16 Fig. 12b - Unclamped Inductive Waveforms Document Number: 90170 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD9020 www.vishay.com Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform S16-1506-Rev. D, 01-Aug-16 Fig. 13b - Gate Charge Test Circuit Document Number: 90170 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD9020 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg + • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90170. S16-1506-Rev. D, 01-Aug-16 Document Number: 90170 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix HVM DIP (High voltage) 0.248 [6.29] 0.240 [6.10] 0.043 [1.09] 0.035 [0.89] 0.197 [5.00] 0.189 [4.80] 0.133 [3.37] 0.125 [3.18] 0.180 [4.57] 0.160 [4.06] 0.094 [2.38] 0.086 [2.18] A L 0.160 [4.06] 0.140 [3.56] 0° to 15° 2x 0.017 [0.43] 0.013 [0.33] 0.045 [1.14] 2 x 0.035 [0.89] E min. 0.024 [0.60] 4x 0.020 [0.51] 0.100 [2.54] typ. E max. INCHES MILLIMETERS DIM. MIN. MAX. MIN. A 0.310 0.330 7.87 MAX. 8.38 E 0.300 0.425 7.62 10.79 L 0.270 0.290 6.86 7.36 ECN: X10-0386-Rev. B, 06-Sep-10 DWG: 5974 Note 1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions. Document Number: 91361 Revision: 06-Sep-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000