UTC ML1225 Medium power low voltage transistor Datasheet

UNISONIC TECHNOLOGIES CO.,LTD.
XL/ML1225
SCR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The XL1225/ML1225 silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts are
intended for low cost high volume applications.
1
TO-92
*Pb-free plating product number:
XL1225L/ML1225L
PIN CONFIGURATION
PIN NO.
PIN NAME
1
CATHODE
2
GATE
3
ANODE
ORDERING INFORMATION
Order Number
Normal
Lead free
XL1225-T92-B
XL1225L-T92-B
XL1225-T92-K
XL1225L-T92-K
ML1225-T92-B ML1225L-T92-B
ML1225-T92-K ML1225L-T92-K
Package
Packing
TO-92
TO-92
TO-92
TO-92
Tape Box
Bulk
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,LTD.
1
QW-R301-003,D
XL/ML1225
SCR
ABSOLUATE MAXIUM RATINGS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
RATINGS
UNIT
XL1225
TJ =40 ~ 125°C
Repetitive Peak
400
V
VDRM
Off-State Voltage
RGK =1kΩ
ML1225
300
On-State Current
IT(RMS) Tc=40°C
0.8
A
Average On-State Current
IT(AV)
Half Cycle=180,Tc=40°C
0.5
A
Peak Reverse Gate Voltage
VGRM IGR=10uA
1
V
Peak Gate Current
IGM
10us Max.
0.1
A
Gate Dissipation
PG(AV) 20ms Max.
150
mW
Operating Temperature
TJ
+125
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~85℃.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
Off State Leakage Current
Off State Leakage Current
SYMBOL
TEST CONDITIONS
MIN
IDRM
@VDRM(RGK=1KΩ), TJ =125°C
IDRM
@VDRM(RGK=1KΩ), TJ =25°C
AT IT=0.4A
VT
AT IT=0.8A
VT(TO) TJ =125°C
Rt
TJ =125°C
IGT
VD=7V
VGT
VD=7V
IH
RGK=1KΩ
IL
RGK=1KΩ
DV/DT VD=0.67*VDRM(RGK=1KΩ),TJ =125℃
DV/DT IG=10mA, dIG/dt=0.1A/µs,TJ =125℃
On State Voltage
On State Threshold Voltage
On State Slops Resistance
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
Critical Rate of Current Rise
Gate Controlled Delay Time
TGD
Commutated Turn-off Time
TG
TYP
MAX
0.1
1.0
1. 4
2.2
0.95
600
200
0.8
5
6
IG=10mA, dIG/dt=0.1A/µs
TJ =85°C, VD=0.67*VDRM
VR=35V, IT=IT(AV)
UNIT
mA
µA
V
2.2
V
m
µA
V
mA
mA
V/µs
A/µs
µs
200
µs
CLASSIFICATION OF IGT
RANK
RANGE
B
50-100µA
C
100-200µA
AA
8-15µA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
AB
15-20µA
AC
20-25µA
AD
25-50µA
2
QW-R301-003,D
XL/ML1225
TYPICAL CHARACTERICS
10
IT,INSTANTANEOUS ON-STATE CURRENT (A)
■
SCR
MAXIMUM @Tj=25℃
1
0.1
0.5
0.8
1.1
1.4
1.7
2.0
2.3
2.6
2.9
3.2
3.5
VT,INSTANTANEOUS ON-STATE VOLTAGE (V)
Figure 5. Typical On-State Characteristics
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R301-003,D
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