£3£tni-L.onauct oi s., Line. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BLV58 UHF linear push-pull power transistor FEATURES QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. • High power gain • Double stage internal input matching for high input impedance • Diffused emitter-ballasting resistors enhances ruggedness • Gold metallization for high reliability. MODE OF OPERATION c.w. class-A (MHz) VCE (V) ICQ (A) "o sync (W) GP (dB) dim (dB) (notet) 860 25 2x1.6 25 >10 <-45 'vision Note 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB); zero dB corresponds to peak sync level. DESCRIPTION The BLV58 is a common emitter epitaxial npn silicon planar transistor designed for high linearity class-A operation in UHF (bands 4 and 5) TV transmitters and transposers. PIN CONFIGURATION The device is incorporated in a push-pull SOT289 flange envelope with a ceramic cap, which is utilized with the emitters connected to the flange. 'nn: 3L b2 Top view PINNING-SOT289 PIN DESCRIPTION 1 collector 1 2 3 4 5 collector 2 Fig.1 Simplified outline and symbol. base 1 base 2 emitter NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors BLV58 UHF linear push-pull power transistor LIMITING VALUES (per transistor section unless otherwise specified) In accordance with the Absolute Maximum System (IEC 134). SYMBOL CONDITIONS PARAMETER VCBO collector-base voltage open emitter MIN. MAX. - 50 UNIT V VCEO collector-emitter voltage open base - 27 V VEBO emitter-base voltage open collector - 3.5 V Id !c(AV) collector current DC or average value - 4 A ICM collector current peak value; f>1 MHz - 8 A Plot total power dissipation DC operation; Tmb = 70 °C (note 1) 87 W Tstg storage temperature range -65 150 "C Tj junction operating temperature - 200 °c Note 1. Total device, both sections equally loaded. 200 10 vCE(V) Total device, both sections equally loaded. Fig.2 DC SOAR. ffl (I) Continuous DC operation (II) Short time operation during mismatch Total device, both sections equally loaded, Fig.3 Power derating curve. UHF linear push-pull power transistor BLV58 THERMAL RESISTANCE SYMBOL CONDITIONS PARAMETER Rthj-mb(DC) from junction to mounting base Rth mb-h from mounting base to heatsink UNIT MAX. Pdis = 87 W; Tmb = 70 °C (note 1 ) 1.5 KM/ note 1 0.2 KM/ Note 1. Total device, both sections equally loaded. CHARACTERISTICS Values apply to either transistor section; T; = 25 "C. SYMBOL PARAMETER CONDITIONS open emitter; lc = 20 mA open base; lc = 50 mA open collector; IE = 10mA MIN. TYP. MAX. UNIT 50 - - V 27 - - V 3.5 - - V mA V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage V(BR)EBO emitter-base breakdown voltage ICES collector-emitter leakage current VBE = 0; VCE = 27 V - - 10 hFE DC current gain VCE = 25 V; IC=1-6A 30 - - Co collector capacitance VCB = 25 V; lE = le = 0; f = 1 MHz 36 45 PF UHF linear push-pull power transistor BLV58 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads - -- D - SOT289A »- t A t . 1. _ j 1 L F Ul [51 H € U2 . \ 3 4 4 -•- 3 Q -• -«-Ww3(M>l 10mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A b c D E e 4.65 333 0,10 392 3.07 005 13.10 12.90 11.53 11.33 4.60 0183 0.131 0004 0.516 0454 . UTLINE ERSION SOT289A 0181 F " H! P Q 1.65 19.81 19,05 4.85 3.43 3.17 231 1 40 434 "1 U2 W1 W2 W3 21,44 28.07 27.81 11.81 11.56 051 102 025 1.105 0.465 1.095 0455 002 004 001 0.065 0780 0191 0.135 0.091 0844 0055 0750 0.171 0125 0081 REFERENCES IEC 2,06 q JEDEC EIAJ EUROPE PROJEC1 ISSUE DATE 97-06-28