Seme LAB BUL58 Advanced distributed base design high voltage high speed npn silicon power transistor Datasheet

BUL58BSMD
MECHANICAL DATA
Dimensions in mm
3 .6 0 (0 .1 4 2 )
M a x .
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
3
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
1
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
0 .7 6
(0 .0 3 0 )
m in .
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
2
FEATURES
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
SMD1 PACKAGE
Pad 1 – Base
Pad 2 – Collector
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
Pad 3 – Emitter
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
180V
VCEO
Collector – Emitter Voltage (IB = 0)
90V
VEBO
Emitter – Base Voltage (IC = 0)
10V
IC
Collector Current
7A
IC(PK)
Peak Collector Current
10A
IB
Base Current
2A
Ptot
Total Dissipation at Tcase = 25°C
Derate above 25°C when used on efficient heatsink
Tstg
Semelab plc.
Operating and Storage Temperature Range
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
50W
0.28W/°C
–65 to 200°C
Prelim. 7/00
BUL58BSMD
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
VCEO(sus)
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage IC = 10mA
V(BR)CBO
Collector – Base Breakdown Voltage
IC = 1mA
180
V(BR)EBO
Emitter – Base Breakdown Voltage
IE = 1mA
10
ICBO
Collector Cut–Off Current
ICEO
Collector Cut–Off Current
IEBO
Emitter Cut–Off Current
hFE*
DC Current Gain
Unit
V
VCB = 180V
IB = 0
Max.
90
10
TC = 125°C
100
VCE = 80V
100
IC = 0
m
A
m
A
m
A
10
VEB = 9V
TC = 125°C
IC = 0.3A
VCE = 4V
30
80
IC = 3A
VCE = 4V
25
60
IC = 5A
VCE = 4V
20
50
TC = 125°C
VCE(sat)*
Typ.
100
—
IC = 1A
IB = 0.1A
0.2
Collector – Emitter Saturation Voltage IC = 3A
IB = 0.3A
0.6
IC = 6A
IB = 0.6A
1.5
IC = 3A
IB = 0.3A
1.1
IC = 6A
IB = 0.5A
2.0
V
VBE(sat)*
Base – Emitter Saturation Voltage
ft
DYNAMIC CHARACTERISTICS
Transition Frequency
IC = 0.2A
VCE = 4V
20
MHz
Cob
Output Capacitance
VCB = 20V
f = 1MHz
44
pF
V
* Pulse test tp = 300ms , d < 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 7/00
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