ON BZX84C15LT1/T3G Zener voltage regulator Datasheet

BZX84BxxxLT1G,
BZX84CxxxLT1G Series,
SZBZX84BxxxLT1G,
SZBZX84CxxxLT1G Series
Zener Voltage Regulators
http://onsemi.com
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
3
Cathode
Features
•
•
•
•
•
•
•
•
SOT−23
CASE 318
STYLE 8
225 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range − 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Tight Tolerance Series Available (See Page 4)
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
1
Anode
MARKING DIAGRAM
xxx M G
G
1
xxx
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
BZX84CxxxLT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SZBZX84CxxxLT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BZX84CxxxLT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
SZBZX84CxxxLT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
BZX84BxxxLT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SZBZX84BxxxLT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BZX84BxxxLT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 17
1
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
Publication Order Number:
BZX84C2V4LT1/D
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
MAXIMUM RATINGS
Rating
Symbol
Total Power Dissipation on FR−5 Board,
(Note 1) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
PD
Max
Unit
225
1.8
556
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Total Power Dissipation on Alumina
Substrate, (Note 2) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
RqJA
300
2.4
417
Junction and Storage Temperature Range
TJ, Tstg
−65 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
C
IF
Parameter
Symbol
QVZ
I
VZ VR
IR VF
IZT
Maximum Temperature Coefficient of VZ
Zener Voltage Regulator
Max. Capacitance @ VR = 0 and f = 1 MHz
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2
V
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
VZ1 (Volts)
@ IZT1 = 5 mA
(Note 3)
Device
Marking
Min
Nom
Max
ZZT1
(W)
@ IZT1 =
5 mA
BZX84C2V4LT1G
Z11
2.2
2.4
2.6
BZX84C2V7LT1G
Z12
2.5
2.7
2.9
BZX84C3V0LT1G
Z13
2.8
3
BZX84C3V3LT1G
Z14
3.1
BZX84C3V6LT1G
Z15
3.4
BZX84C3V9LT1G
Z16
BZX84C4V3LT1G
BZX84C4V7LT1/T3G
VZ2 (V)
@ IZT2 = 1 mA
(Note 3)
Min
Max
ZZT2
(W)
@ IZT2 =
1 mA
100
1.7
2.1
100
1.9
2.4
3.2
95
2.1
3.3
3.5
95
3.6
3.8
90
3.7
3.9
4.1
W9
4
4.3
Z1
4.4
4.7
BZX84C5V1LT1/T3G
Z2
4.8
BZX84C5V6LT1/T3G
Z3
5.2
BZX84C6V2LT1/T3G
Z4
BZX84C6V8LT1/T3G
BZX84C7V5LT1G
VZ3 (V)
@ IZT3 = 20 mA
(Note 3)
Min
Max
ZZT3
(W)
@ IZT3 =
20 mA
600
2.6
3.2
50
600
3
3.6
50
2.7
600
3.3
3.9
2.3
2.9
600
3.6
2.7
3.3
600
3.9
90
2.9
3.5
600
4.6
90
3.3
4
5
80
3.7
4.7
5.1
5.4
60
4.2
5.3
5.6
6
40
4.8
6
5.8
6.2
6.6
10
5.6
Z5
6.4
6.8
7.2
15
Z6
7
7.5
7.9
15
BZX84C8V2LT1G
Z7
7.7
8.2
8.7
BZX84C9V1LT1/T3G
Z8
8.5
9.1
BZX84C10LT1G
Z9
9.4
10
BZX84C11LT1G
Y1
10.4
11
BZX84C12LT1G
Y2
11.4
BZX84C13LT1G
Y3
12.4
BZX84C15LT1/T3G
Y4
BZX84C16LT1G
BZX84C18LT1/T3G
Max Reverse
Leakage
Current
qVZ
(mV/k)
@ IZT1 = 5 mA
VR
Volts
Min
Max
C (pF)
@ VR = 0
f = 1 MHz
50
1
−3.5
0
450
20
1
−3.5
0
450
50
10
1
−3.5
0
450
4.2
40
5
1
−3.5
0
450
4.5
40
5
1
−3.5
0
450
4.1
4.7
30
3
1
−3.5
−2.5
450
600
4.4
5.1
30
3
1
−3.5
0
450
500
4.5
5.4
15
3
2
−3.5
0.2
260
480
5
5.9
15
2
2
−2.7
1.2
225
400
5.2
6.3
10
1
2
−2.0
2.5
200
6.6
150
5.8
6.8
6
3
4
0.4
3.7
185
6.3
7.2
80
6.4
7.4
6
2
4
1.2
4.5
155
6.9
7.9
80
7
8
6
1
5
2.5
5.3
140
15
7.6
8.7
80
7.7
8.8
6
0.7
5
3.2
6.2
135
9.6
15
8.4
9.6
100
8.5
9.7
8
0.5
6
3.8
7.0
130
10.6
20
9.3
10.6
150
9.4
10.7
10
0.2
7
4.5
8.0
130
11.6
20
10.2
11.6
150
10.4
11.8
10
0.1
8
5.4
9.0
130
12
12.7
25
11.2
12.7
150
11.4
12.9
10
0.1
8
6.0
10.0
130
13
14.1
30
12.3
14
170
12.5
14.2
15
0.1
8
7.0
11.0
120
13.8
15
15.6
30
13.7
15.5
200
13.9
15.7
20
0.05
10.5
9.2
13.0
110
Y5
15.3
16
17.1
40
15.2
17
200
15.4
17.2
20
0.05
11.2
10.4
14.0
105
Y6
16.8
18
19.1
45
16.7
19
225
16.9
19.2
20
0.05
12.6
12.4
16.0
100
BZX84C20LT1G
Y7
18.8
20
21.2
55
18.7
21.1
225
18.9
21.4
20
0.05
14
14.4
18.0
85
BZX84C22LT1G
Y8
20.8
22
23.3
55
20.7
23.2
250
20.9
23.4
25
0.05
15.4
16.4
20.0
85
BZX84C24LT1G
Y9
22.8
24
25.6
70
22.7
25.5
250
22.9
25.7
25
0.05
16.8
18.4
22.0
80
Device*
VZ1 Below
@ IZT1 = 2 mA
VZ2 Below
@ IZT2 = 0.1 mA
VZ3 Below
@ IZT3 = 10 mA
Device
Marking
Min
Nom
Max
ZZT1
Below
@ IZT1 =
2 mA
Min
Max
ZZT2
Below
@ IZT4 =
0.5 mA
Min
Max
ZZT3
Below
@ IZT3 =
10 mA
BZX84C27LT1G
Y10
25.1
27
28.9
80
25
28.9
300
25.2
29.3
45
BZX84C30LT1G
Y11
28
30
32
80
27.8
32
300
28.1
32.4
BZX84C33LT1/T3G
Y12
31
33
35
80
30.8
35
325
31.1
BZX84C36LT1G
Y13
34
36
38
90
33.8
38
350
34.1
BZX84C39LT1G
Y14
37
39
41
130
36.7
41
350
BZX84C43LT1G
Y15
40
43
46
150
39.7
46
375
BZX84C47LT1G
Y16
44
47
50
170
43.7
50
BZX84C51LT1G
Y17
48
51
54
180
47.6
BZX84C56LT1G
Y18
52
56
60
200
51.5
BZX84C62LT1G
Y19
58
62
66
215
BZX84C68LT1G
Y20
64
68
72
BZX84C75LT1G
Y21
70
75
79
Device*
IR
mA
@
Max Reverse
Leakage
Current
qVZ
(mV/k) Below
@ IZT1 = 2 mA
VR
(V)
Min
Max
C (pF)
@ VR = 0
f = 1 MHz
0.05
18.9
21.4
25.3
70
50
0.05
21
24.4
29.4
70
35.4
55
0.05
23.1
27.4
33.4
70
38.4
60
0.05
25.2
30.4
37.4
70
37.1
41.5
70
0.05
27.3
33.4
41.2
45
40.1
46.5
80
0.05
30.1
37.6
46.6
40
375
44.1
50.5
90
0.05
32.9
42.0
51.8
40
54
400
48.1
54.6
100
0.05
35.7
46.6
57.2
40
60
425
52.1
60.8
110
0.05
39.2
52.2
63.8
40
57.4
66
450
58.2
67
120
0.05
43.4
58.8
71.6
35
240
63.4
72
475
64.2
73.2
130
0.05
47.6
65.6
79.8
35
255
69.4
79
500
70.3
80.2
140
0.05
52.5
73.4
88.6
35
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
*Include SZ-prefix devices where applicable.
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3
IR
mA
@
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Device
Device
Marking
VZ (Volts) @ IZT = 5 mA
(Note 4)
Max Reverse
Leakage
Current
ZZT (W) @
IZT = 5 mA
(Note 4)
IR
mA
Min
Nom
Max
Max
@
qVZ
(mV/k)
@ IZT = 5 mA
Volts
Min
Max
C (pF)
@ VR =0,
f = 1 MHz
VR
BZX84B4V7LT1G
T10
4.61
4.7
4.79
80
3
2
−3.5
0.2
260
BZX84B5V1LT1G
T11
5.00
5.1
5.20
60
2
2
−2.7
1.2
225
BZX84B5V6LT1G
T12
5.49
5.6
5.71
40
1
2
−2
2.5
200
BZX84B6V2LT1G
T13
6.08
6.2
6.32
10
3
4
0.4
3.7
185
BZX84B6V8LT1G
T14
6.66
6.8
6.94
15
2
4
1.2
4.5
155
BZX84B7V5LT1G
T15
7.35
7.5
7.65
15
1
5
2.5
5.3
140
BZX84B8V2LT1G
T16
8.04
8.2
8.36
15
0.7
5
3.2
6.2
135
BZX84B9V1LT1G
T17
8.92
9.1
9.28
15
0.5
6
3.8
7
130
BZX84B12LT1G
T18
11.8
12
12.2
25
0.1
8
6
10
130
BZX84B15LT1G
T22
14.7
15
15.3
30
0.05
10.5
9.2
13
110
BZX84B16LT1G
T19
15.7
16
16.3
40
0.05
11.2
10.4
14
105
BZX84B18LT1G
T20
17.6
18
18.4
45
0.05
12.6
12.4
16
100
BZX84B22LT1G
T24
21.6
22
22.4
55
0.05
15.4
16.4
20
85
BZX84B24LT1G
T25
23.5
24
24.5
70
0.05
16.8
18.4
22
80
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Device*
BZX84B27LT1G
Device
Marking
T27
VZ (Volts) @ IZT = 2 mA
(Note 4)
ZZT (W) @
IZT = 2 mA
(Note 4)
Min
Nom
Max
Max
26.5
27
27.5
80
*Include SZ-prefix devices where applicable.
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4
Max Reverse
Leakage
Current
IR
mA
0.05
@
qVZ
(mV/k)
@ IZT = 2 mA
Volts
Min
Max
C (pF)
@ VR =0,
f = 1 MHz
18.9
21.4
25.3
70
VR
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
8
100
7
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
TYPICAL CHARACTERISTICS
TYPICAL TC VALUES
6
5
4
VZ @ IZT
3
2
1
0
-1
-2
-3
2
3
4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)
11
12
TYPICAL TC VALUES
VZ @ IZT
10
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
1000
IZ = 1 mA
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT, DYNAMIC IMPEDANCE ( Ω )
1000
100
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
100
5 mA
20 mA
10
10
150°C
1
1
10
VZ, NOMINAL ZENER VOLTAGE
100
1
0.4
Figure 3. Effect of Zener Voltage on
Zener Impedance
0.5
75°C 25°C
0.6
0°C
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
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5
1.1
1.2
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
TYPICAL CHARACTERISTICS
1000
1000
C, CAPACITANCE (pF)
0 V BIAS
1 V BIAS
I R , LEAKAGE CURRENT (μA)
TA = 25°C
100
BIAS AT
50% OF VZ NOM
10
1
1
10
VZ, NOMINAL ZENER VOLTAGE (V)
100
100
10
1
+150°C
0.1
0.01
0.001
+25°C
0.0001
-55°C
0.00001
0
10
Figure 5. Typical Capacitance
20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
100
100
TA = 25°C
I Z , ZENER CURRENT (mA)
I Z , ZENER CURRENT (mA)
TA = 25°C
10
1
0.1
0.01
80
0
2
4
6
8
VZ, ZENER VOLTAGE (V)
1
0.1
0.01
12
10
10
10
30
50
70
VZ, ZENER VOLTAGE (V)
90
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
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6
90
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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