AP9469GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
40V
RDS(ON)
50mΩ
ID
G
▼ RoHS Compliant
BVDSS
18A
S
Description
G D
S
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9469GJ) is available for low-profile applications.
G
D
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current
18
A
ID@TC=100℃
Continuous Drain Current
11
A
1
IDM
Pulsed Drain Current
50
A
PD@TC=25℃
Total Power Dissipation
26
W
Linear Derating Factor
0.21
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200531051-1/4
AP9469GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
40
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=12A
-
-
50
mΩ
VGS=4.5V, ID=8A
-
-
72
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=12A
-
11
-
S
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=32V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=12A
-
6
10
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=30V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3
-
nC
VDS=20V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=12A
-
21
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
14
-
ns
tf
Fall Time
RD=1.67Ω
-
2
-
ns
Ciss
Input Capacitance
VGS=0V
-
480
770
pF
Coss
Output Capacitance
VDS=25V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1
1.5
Ω
Min.
Typ.
IS=12A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=12A, VGS=0V,
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP9469GH/J
30
30
10V
7.0V
ID , Drain Current (A)
10V
7.0V
o
T C = 150 C
ID , Drain Current (A)
o
T C =25 C
5.0V
20
4.5V
10
20
5.0V
4.5V
10
V G =3.0V
V G =3.0V
0
0
0
2
4
6
0
2
V DS , Drain-to-Source Voltage (V)
4
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
155
I D = 12 A
V G =10V
ID=8A
o
Normalized RDS(ON)
T C =25 C
RDS(ON) (mΩ)
115
75
35
1.4
1.0
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6
Normalized VGS(th) (V)
1.8
4
IS (A)
T j =150 o C
T j =25 o C
2
1.4
1
0.6
0.2
0
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9469GH/J
f=1.0MHz
1000
12
ID=12A
V DS = 20 V
V DS = 25 V
V DS = 30 V
8
C (pF)
VGS , Gate to Source Voltage (V)
C iss
100
C oss
4
C rss
10
0
0
3
6
9
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100us
ID (A)
10.0
1ms
1.0
10ms
100ms
DC
o
T c =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
100.0
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
ID , Drain Current (A)
V DS =5V
QG
20
o
T j =25 C
4.5V
o
T j =150 C
QGS
QGD
10
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4