WILLAS FM120-M+ THRU MMBTA94LT1 PNPSURFACE EPITAXIAL FM1200-M+ 1.0A MOUNTPLANAR SCHOTTKYTRANSISTOR BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features excellent power dissipation offers • Batch process We declare that thedesign, material of product better reverse leakage current and thermal resistance. compliance with surface RoHS mounted requirements. application in order to • Low profile optimize boardisspace. Pb-Free package available power loss, high efficiency. • Low RoHS product for packing code suffix ”G” • High current capability, low forward voltage drop. Halogen free product for packing code suffix “H” surge capability. • High • Guardring for overvoltage protection. Description • Ultra high-speed switching. Silicon epitaxial planar chip, metalfor silicon junction. The •MMBTA94LT1 is designed application Lead-free parts meet environmental standards of • that requires high voltage. SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) SOT– 230.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Features Halogen free product for packing code suffix "H" COLLECTOR 3 • High Breakdown Voltage: Mechanical data VCEO=400(Min.) at IC=1mA • Complementary to MMBTA94LT1 0.040(1.0) 0.024(0.6) 1 BASE • Epoxy : UL94-V0 rated flame retardant DEVICE MARKING : Molded plastic, SOD-123H • Case , • Terminals =:Plated terminals, solderable per MIL-STD-750 MMBTA94LT1 4Z 0.031(0.8) Typ. 0.031(0.8) Typ. 2 EMITTER Method 2026 Absolute Maximum Ratings • Polarity : Indicated by cathode band Dimensions in inches and (millimeters) • Maximum Temperatures Position : Any • Mounting Storage Temperature ............................................................................................ -55 ~ +150 °C • Weight : Approximated 0.011 gram Junction Temperature .................................................................................... +150 °C Maximum RATINGS AND ELECTRICAL CHARACTERISTICS • MaximumMAXIMUM Power Dissipation Ratings 25℃ ambient temperature unless otherwise specified. Totalat Power Dissipation (Ta=25°C) ................................................................................ 350 mW Single phase half wave, 60Hz, resistive of inductive load. • Maximum Voltages and Currents (Ta=25°C) For capacitive load, derate current by 20% VCBO Collector to Base Voltage ...................................................................................... -400 V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH RATINGS VCEO Collector to Emitter Voltage ................................................................................... -400 VFM1150-MH FM1200-MH UNIT Marking CodeEmitter to Base Voltage ............................................................................................. 12 13 14 15 16 18 10 -6 V 115 120 VEBO 20 30 40 50 60 80 100 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM IC Collector Current ...................................................................................................... -150 mA 150 Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Characteristics (Ta=25 ° C) Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO 1.0 Symbol Min. Typ. Max. Unit Test Conditions Peak Forward Surge Current-400 8.3 ms single half -sine-wave BVCBO V IC=-100uA, IE=0 30 IFSM superimposed on rated load (JEDEC BVCEO -400 method) V IC=-1mA, IB=0 40 TypicalBVEBO Thermal Resistance-6 (Note 2) RΘJA V IE=-10uA, IC=0 120 Typical Junction Capacitance (Note 1) CJ ICBO -100 nA VCB=-400V, IE=0 -55 to +125 -55 to +150 Operating Temperature Range TJ IEBO -100 nA VEB=-6V, IC=0 65 to +175 Storage Temperature Range TSTG ICES -500 nA VCE=-400V, VBE=0 *VCE(sat)1 CHARACTERISTICS -200 mV IC=-1mA, IB=-0.1mA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH *VCE(sat)2 -300 mV IC=-10mA, IB=-1mA 0.9 Maximum Forward Voltage at- 1.0A DC 0.92 VF 0.50 0.70 0.85 *VCE(sat)3 -600 mV IC=-50mA, IB=-5mA 0.5 Maximum Average Reverse Current at @T A=25℃ IR *VBE(sat) -900 mV IC=-10mA, IB=-1mA 10 @T-A=125℃ Rated DC Blocking Voltage *hFE1 50 VCE=-10V, IC=-1mA NOTES: *hFE2 75 200 VCE=-10V, IC=-10mA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. *hFE3 60 VCE=-10V, IC=-50mA 2- Thermal Resistance From Junction to Ambient *hFE4 20 VCE=-10V, IC=-100mA Cob 4 6 pF VCE=-10V, f=1MHz Maximum Average Forward Rectified Current Amps Amps ℃/W PF ℃ ℃ UNIT Volts mAmps *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTA94LT1 PNP EPITAXIAL FM1200-M+ 1.0A SURFACE MOUNTPLANAR SCHOTTKY TRANSISTOR BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Characteristics Curve better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Gain & Collector Current Current Current Gain & Collector Current 1000 power loss, high efficiency. • Low • High current capability, low forward voltage drop. o • High surge capability. 75 C o 125 C • Guardring for overvoltage protection. • Ultra 100 high-speed switching. o 25 C planar chip, metal silicon junction. • Silicon epitaxial • Lead-free parts meet environmental standards of 1000 0.012(0.3) Typ. hFE @ VCE=10V o 75 C 0.071(1.8) 0.056(1.4) o hFE 125 C hFE • 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 RoHS product for packing code suffix "G" 10 hFE @ VCE=3V Halogen free product for packing code suffix "H" 100 o 25 C Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 1 : Molded plastic, SOD-123H • Case 1 10 100 1000 , C (mA) • Terminals :Plated Collector terminals, solderable per MIL-STD-750 Current-I 10 0.031(0.8) Typ. 1 10 100 0.031(0.8) Typ. 1000 Collector Current-IC (mA) Method 2026 • Polarity : Indicated by cathode band Voltage & Collector Current Saturation: Any • Mounting Position 1000 • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) Saturation Voltage & Collector Current 1000 VCE(sat) @ IC=10IB o 25 C Saturation Voltage (mV) Saturation Voltage (mV) o MAXIMUM RATINGS 75 C AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. o 125 C Single phase half wave, 60Hz, resistive of inductive load. For capacitive 100 load, derate current by 20% o 25 C RATINGS o 125 C o 75 C VBE(s at) @ ICFM1150-MH =10IB SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC10 Blocking Voltage VDC 20 30 40 50 60 100 150 200 Volts IO 1 Forward Rectified 10 Maximum Average Current 100 Collector Current-IC (mA) Peak Forward Surge Current 8.3 ms single half sine-wave 1000 100 80 10 1.0 1 100 Amps 1000 Collector Current-IC (mA) IFSM 30 Amps Capacitance Typical Thermal Resistance (Note &2)Reverse-Biased Voltage RΘJA 40 120 ℃/W superimposed on rated load (JEDEC method) 100 CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range Capacitance (pF) -55 to +125 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC 10 Maximum Average Reverse CurrentCob at @T A=25℃ @T A=125℃ Rated DC Blocking Voltage ℃ - 65 to +175 TSTG CHARACTERISTICS PF -55 to +150 0.50 0.70 0.85 0.5 IR 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 1 0.1 1 10 100 Reverse-Biased Voltage (V) 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTA94LT1 PNP EPITAXIAL PLANAR TRANSISTOR FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. .106(2.70) Halogen free product for packing code suffix "H" 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .080(2.04) .083(2.10) Mechanical data 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .110(2.80) • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) .006(0.15)MIN. MIL-STD-19500 /228 .063(1.60) .047(1.20) • Low power loss, high efficiency. • High current capability, low forward voltage drop. SOT-23 • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. .122(3.10) of • Lead-free parts meet environmental standards 0.031(0.8) Typ. Dimensions in inches and (millimeters) .008(0.20) .003(0.08) .070(1.78) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT .004(0.10)MAX. VRRM Maximum Recurrent Peak Reverse Voltage 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts IO Maximum Average Forward Rectified Current .020(0.50) Peak Forward Surge Current 8.3 ms single half sine-wave IFSM .012(0.30) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) Dimensions and (millimeters) to +125 TJ in inches-55 Operating Temperature Range Storage Temperature Range CHARACTERISTICS 1.0 Amp 30 Amp 40 120 ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH 0.037FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC 0.037 0.95 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage .055(1.40) .035(0.89) Maximum RMS Voltage Volts VF @T A=125℃ 0.50 0.95 0.70 0.85 0.9 0.92 0.5 IR 10 Volts mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.079 2.0 2- Thermal Resistance From Junction to Ambient 0.035 0.9 0.031 0.8 2012-06 2012-11 inches mm WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.