Transistors SMD Type PNP Transistors FZT789A (KZT789A) Unit:mm SOT-223 。 10 6.50±0.2 3.00±0.1 7.0±0.3 Features Low equivalent on-resistance; RCE(sat) 93mΩ at 3A. 3.50±0.2 4 1 Gain of 300 at IC=2 Amps and Very low saturation voltage. 2 3 0.250 2.30 (typ) 1.80 (max) Gauge Plane 0.02 ~ 0.1 1.Base 2.Collector 0.70±0.1 4.60 (typ) 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -25 Emitter - Base Voltage VEBO -5 IC -3 Peak Pulse Current ICM -6 Collector Power Dissipation PC 2 Collector Current - Continuous Junction Temperature Storage Temperature range TJ 150 Tstg -55 to 150 Unit V A W ℃ www.kexin.com.cn 1 Transistors SMD Type FZT789A (KZT789A) Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Breakdown Voltages V(BR)CBO IC=-100uA -25 -40 V Breakdown Voltages * V(BR)CEO IC=-10mA -25 -35 V Breakdown Voltages V(BR)EBO IE=-100uA -5 -8.5 Collector Cut-Off Current ICBO VCB=-15V VCB=-15V,Ta = 100 Emitter Cut-Off Current IEBO VEB=-4V V -0.1 10 uA -0.1 uA Saturation Voltages * IC=-1A, IB=-10mA VCE(sat) IC=-2A, IB=-20mA IC=-3A, IB=-100mA -0.15 -0.25 -0.30 -0.45 -0.30 -0.50 V Saturation Voltages * VBE(sat) IC=-1A, IB=-10mA -0.8 V Base-Emitter Turn-On Voltage * VBE(on) IC=-1A, VCE=-2V -0.8 Static Forward Current Transfer Ratio Transitional frequency hFE fT IC=-10mA, VCE=-2V 300 IC=-1A, VCE=-2V* 250 IC=-2A, VCE=-2V* 200 IC=-6A, VCE=-2V* 100 IC=-50mA, VCE=-5V, f=50MHz 100 -1.0 V 800 MHz Input capacitance Cibo VEB=-0.5V, f=1MHz 225 pF Output capacitance Cobo VCB=-10V, f=1MHz 25 pF Turn-on time t(on) IC=-500mA, VCC=-10V 35 ns Turn-off time t(off) IB1=IB2=-50mA 400 ns * Pulse test: tp = 300 us; d 0.02. Marking Marking 2 Testconditi ons FZT789A www.kexin.com.cn Transistors SMD Type FZT789A (KZT789A) ■ Typical Characterisitics µ www.kexin.com.cn 3