ECH8652 Ordering number : ENA0935A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8652 General-Purpose Switching Device Applications Features • • • Low ON-resistance 1.8V drive Composit type, facilitating high-density mounting • • Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP PD Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature PT Tch Storage Temperature Tstg A A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W When mounted on ceramic substrate (900mm2×0.8mm) 1.5 W 150 °C --55 to +150 °C Product & Package Information • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8652-TL-H 0.25 Packing Type : TL 0.15 8 V --6 unit : mm (typ) 7011A-001 2.9 V ±10 --40 PW≤10μs, duty cycle≤1% Package Dimensions Top View Unit --12 Marking WX 5 2.3 4 1 0.65 0.9 0.25 LOT No. TL Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 2.8 0 t o 0.02 Bot t om View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 62012 TKIM/O0108PE TIIM TC-00001630 No. A0935-1/7 ECH8652 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS1 Conditions IDSS2 ID=--1mA, VGS=0V VDS=--8V, VGS=0V VDS=--12V, VGS=0V Cutoff Voltage IGSS VGS(off) VGS=±8V, VDS=0V VDS=--6V, ID=--1mA Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 VDS=--6V, ID=--3A ID=--3A, VGS=--4.5V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings min typ Unit max --12 V --0.4 6.6 ID=--1.5A, VGS=--2.5V ID=--0.5A, VGS=--1.8V --1 μA --10 μA ±10 μA --1.4 11 V S 21 28 mΩ 31 45 mΩ 49 78 mΩ 1000 pF 320 pF Crss 250 pF Turn-ON Delay Time td(on) 11 ns Rise Time tr 72 ns Turn-OFF Delay Time td(off) 105 ns Fall Time tf 87 ns Total Gate Charge Qg 11 nC Gate-to-Source Charge Qgs 1.5 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--6V, f=1MHz See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=--6A 2.9 IS=--6A, VGS=0V --0.81 nC --1.2 V Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --3A RL=2Ω VOUT VIN D PW=10μs D.C.≤1% G ECH8652 P.G 50Ω S Ordering Information Device ECH8652-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A0935-2/7 ECH8652 ID -- VDS --8 --2 --7 --6 --5 --4 --3 --2 --1 C --25°C 1.5V V GS= -- Ta= 75° C --3 Drain Current, ID -- A --4 VDS= --6V --9 --4.5 V --4.0 V Drain Current, ID -- A --5 ID -- VGS --10 --2.5V --1. 8V --8.0V --6.0V --6 0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V 0 80 --3.0A 70 --1.5A 60 50 ID= --0.5A 30 20 10 0 --2 0 --4 --6 10 7 5 C 5° --2 = °C Ta 75 1.0 7 5 °C 25 3 2 0.1 7 5 A --1.5 V, I D= 40 --2.5 V GS= .0A I = --3 --4.5V, D = V GS 30 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT12950 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 3 2 0.01 --0.001 2 3 0.001 5 7--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 Drain Current, ID -- A 0 5 7 --10 IT12951 5 2 td(off) 100 tf 7 5 3 tr 2 --0.6 --0.8 --1.0 --1.2 IT12952 f=1MHz 2 Ciss, Coss, Crss -- pF 3 --0.4 Ciss, Coss, Crss -- VDS 3 VDD= --6V VGS= --4.5V 7 --0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 Switching Time, SW Time -- ns 50 --10 7 5 3 2 VDS= --6V 3 2 A Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 2 --2.5 IT12948 --0.5 , I D= --1.8V = V GS 60 IT12949 | yfs | -- ID --2.0 70 0 --60 --8 Gate-to-Source Voltage, VGS -- V --1.5 RDS(on) -- Ta 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 90 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 40 --0.5 IT12947 RDS(on) -- VGS 100 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.0 5°C 25°C --25° C --0.1 Ta= 7 0 5 25° --1 0 Ciss 1000 7 5 Coss 3 Crss 2 td(on) 10 7 --0.01 100 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT12953 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT12954 No. A0935-3/7 ECH8652 VGS -- Qg --100 7 5 3 2 VDS= --6V ID= --6A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC 11 12 IT12955 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 10 --10 7 5 3 2 ASO IDP= --40A 1m s ID= --6A 10 DC ms 10 0m op era s tio --1.0 7 5 3 2 --0.1 7 5 3 2 PW≤10μs n( Ta = 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT12956 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.5 1.4 1.3 1.2 To t 1.0 al 0.8 Di ss 1u nit 0.6 ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12957 No. A0935-4/7 ECH8652 Embossed Taping Specification ECH8652-TL-H No. A0935-5/7 ECH8652 Outline Drawing ECH8652-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A0935-6/7 ECH8652 Note on usage : Since the ECH8652 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A0935-7/7