Sirectifier MBR1645 Wide temperature range and high tjm schottky barrier rectifier Datasheet

MBR1630 thru MBR1645
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AC
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
A
C
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
MBR1630
MBR1635
MBR1640
MBR1645
VRRM
V
30
35
40
45
VRMS
V
21
24.5
28
31.5
Symbol
VDC
V
30
35
40
45
Characteristics
16
A
150
A
10000
V/us
IF=16A @TJ=25oC
IF=16A @TJ=125oC
0.63
0.57
V
@TJ=25oC
@TJ=125oC
0.2
40
mA
@TC=125oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Voltage Rate Of Change (Rated VR)
Maximum Forward
Voltage (Note 1)
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
1.5
CJ
Typical Junction Capacitance (Note 3)
450
TJ
Operating Temperature Range
ROJC
TSTG
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Unit
Maximum Average Forward Rectified Current
VF
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Maximum Ratings
I(AV)
dv/dt
Dim.
Storage Temperature Range
o
C/W
pF
-55 to +150
o
-55 to +175
o
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
C
C
MBR1630 thru MBR1645
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
16
12
8
RESISTIVE OR
INDUCTIVE LOAD
4
0
25
50
75
100
125
150
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
20
150
100
175
50
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
1
2
5
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
50
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
1000
INSTANTANEOUS FORWARD CURRENT ,(A)
100
100
TJ = 100 C
10
1.0
TJ = 75 C
0.1
10
1.0
TJ = 25 C
TJ = 25 C
0.01
PULSE WIDTH 300us
2% Duty cycle
0.1
0
20
40
60
80
100
120
140
0.1
0.2
0.3
0.4
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
1000
TJ = 25 C F= 1MHz
100
0.1
1
0.5
0.6
0.7
0.8
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
CAPACITANCE , (pF)
INSTANTANEOUS REVERSE CURRENT ,(mA)
20
10
NUMBER OF CYCLES AT 60Hz
4
10
REVERSE VOLTAGE , VOLTS
100
1.0
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