NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features Suitable for linear and saturated applications Tunable from DC-6 GHz 48V Operation Industry Standard Plastic Package High Drain Efficiency (>60%) Applications Defense Communications Land Mobile Radio Avionics Wireless Infrastructure ISM Applications VHF/UHF/L/S-Band Radar DC-6 GHz 12.5W GaN HEMT Product Description The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12.5W (41 dBm) in an industry standard surface mount plastic package. RF Specifications (CW, 2.5 GHz): VDS = 48V, IDQ = 75mA, TC= 25°C Symbol Parameter Min Typ Max Units G SS Small-signal Gain - 17.5 - dB PSAT Saturated Output Power - 41.8 - dBm SAT Efficiency at Saturated Output Power - 60 - % Gain at POUT = 12.5W - 16.5 - dB Drain Efficiency at POUT = 12.5W - 55 - % Drain Voltage - 48 - V GP VDS Ruggedness: Output Mismatch, all phase angles Preliminary Datasheet Page 1 VSWR = 10:1, No Device Damage NDS-042 Rev. 2, 020314 NPT2018 Preliminary DC Specifications: TC = 25°C Symbol Parameter Min Typ Max Units Off Characteristics IDLK Drain-Source Leakage Current (VGS=-8V, VDS=160V) - - 3 mA IGLK Gate-Source Leakage Current (VGS=-8V, VDS=0V) - - 1.5 mA On Characteristics VT Gate Threshold Voltage (VDS=48V, I D=3mA) -2.5 -1.5 -0.5 V VGSQ Gate Quiescent Voltage (VDS=48V, I D=75mA) -2.1 -1.2 -0.3 V RON On Resistance (VDS=2V, I D=22mA) - 1.6 - Maximum Drain Current (VDS=7V pulsed, 300µS pulse width, 0.2% Duty Cycle) - 1.75 - A Typ Units 6.5 °C/W ID, MAX Thermal Resistance Specification: Symbol RJC Parameter Thermal Resistance (Junction-to-Case), TJ = 200 °C Junction Temperature (TJ) measured using IR Microscopy, Case Temperature (TC) measured using a thermocouple embedded in heatsink. Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted Symbol Parameter Max Units VDS Drain-Source Voltage 160 V VGS Gate-Source Voltage -10 to 3 V 6 mA 26.9 W -65 to 150 °C 200 °C IG Gate Current PT Total Device Power Dissipation (Derated above 25°C) TSTG TJ Storage Temperature Range Operating Junction Temperature HBM Human Body Model ESD Rating (per JESD22-A114) Class 1A MSL Moisture sensitivity level (per IPC/JEDEC J-STD-020) TBD Preliminary Datasheet Page 2 NDS-042 Rev. 2, 020314 NPT2018 Preliminary Load-Pull Data, Reference Plane at Device Leads VDS=48V, IDQ=75mA, TC=25C unless otherwise noted Optimum Source and Load Impedances: (CW Drain Efficiency and Output Power Tradeoff Impedance) Frequency ZS () PSAT (W) ZL () GSS (dB) Drain Efficiency (MHz) @ PSAT (%) 900 8.8 + j10.3 31 + j36 17 25.0 64 2500 4.1 - j2.9 12.5 + j18 16 18.0 59 4000 4.5 - j9.5 7.5 + j9.4 14 15.0 51 5800 5.3 - j21.5 5.0 - j1.6 12 13.5 45 Figure 1: CW Power/Drain Efficiency Tradeoff Impedances, ZO=50 30 70 60 Drain Efficiency (%) Gain (dB) 25 20 15 10 5 20 900MHz 2500MHz 4000MHz 5800MHz 25 40 900MHz 2500MHz 4000MHz 5800MHz 30 20 10 30 35 40 45 POUT (dBm) 0 20 25 30 35 40 45 POUT (dBm) Figure 3: Efficiency vs. POUT Figure 2: Gain vs. POUT Preliminary Datasheet 50 Page 3 NDS-042 Rev. 2, 020314 NPT2018 Preliminary Figure 4 - DFN3X6-14 Plastic Package Dimensions (all dimensions in inches [millimeters]) Pin Function 10, 11, 12 Gate — RF Input 3, 4, 5 Drain — RF Output Exposed Pad Source — Ground 1, 2, 6-9, 13, 14 No Connect* * All No Connect pins may be left floating or grounded Preliminary Datasheet Page 4 NDS-042 Rev. 2, 020314 NPT2018 Preliminary Nitronex, LLC 523 Davis Drive, Suite 500 Morrisville, NC 27560 USA +1.919.807.9100 (telephone) +1.919.4 7 2.0692 (fax) [email protected] www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). 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All other product or service names are the property of their respective owners. © Nitronex, LLC 2014 All rights reserved. Preliminary Datasheet Page 5 NDS-042 Rev. 2, 020314