ASI OSC-07L Npn silicon rf power transistor Datasheet

OSC-0.7L
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE TO-46
DESCRIPTION:
C
B
The ASI OSC-0.7L is Designed for
45°
ØA
ØD
FEATURES:
E
•
•
• Omnigold™ Metalization System
F
H
G
MAXIMUM RATINGS
500 mA
IC
MINIMUM
DIM
VCB
40 V
PDISS
7.0 W @ TC = 25 OC
O
-65 C to +200 C
TJ
TSTG
-65 OC to +200 OC
θ JC
25 OC/W
CHARACTERISTICS
SYMBOL
inches/mm
.100 / 2.540
A
O
MAXIMUM
inches/mm
B
.028 / 0.710
.048 / 1.220
C
.035 / 0.890
.046 / 1.170
D
.209 / 5.310
.229 / 5.840
E
.178 / 4.520
.195 / 4.950
F
.065 / 1.650
.085 / 2.160
.500 / 12.700
G
.012 / 0.3050
H
.019 / 0.4830
ORDER CODE: ASI10637
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 1.0 mA
20
V
BVCBO
IC = 100 µA
40
V
BVEBO
IE = 100 µA
3.0
V
ICBO
VCB = 18 V
hFE
VCE = 5.0 V
COB
VCB = 18 V
ηC
VCC = 18 V
ft
VCE = 10 V
IE = 100 mA
POSC
VCC = 18 V
IE = 150 mA
IC = 100 mA
25
f = 1.0 MHz
POUT = 0.7 W
f = 1.68 GHz
100
µA
250
---
5.0
pF
25
%
f = 200 MHz
2500
MHz
f = 1.68 GHz
700
mW
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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