PHILIPS BU2522 Silicon diffused power transistor Datasheet

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522A
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
operation up to 64 kHz.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
VBE = 0 V
PINNING - SOT93
PIN
TYP.
MAX.
UNIT
6.0
1.7
1500
800
10
25
125
5.0
2.0
V
V
A
A
W
V
A
µs
Tmb ≤ 25 ˚C
IC = 6.0 A; IB = 1.76 A
ICM = 6.0 A; IB(end) = 0.7 A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
c
tab
1
base
2
collector
3
emitter
tab
collector
b
1
2
e
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Tmb ≤ 25 ˚C
MIN.
MAX.
UNIT
-65
-
1500
800
10
25
6
9
150
6
125
150
150
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
1.0
K/W
45
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Junction to mounting base
Rth j-a
Junction to ambient
CONDITIONS
in free air
1 Turn-off current.
November 1995
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 6.0 A; IB = 1.76 A
IC = 6.0 A; IB = 1.76 A
IC = 1 A; VCE = 5 V
IC = 6 A; VCE = 5 V
MIN.
TYP.
MAX.
UNIT
-
-
0.25
2.0
mA
mA
7.5
800
13.5
-
0.25
-
mA
V
V
8
5
10
7
5.0
1.3
21
8
V
V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
115
-
pF
Switching times (64 kHz line
deflection circuit)
ICM = 6.0 A; LC = 170 µH; Cfb = 5.4 nF;
IB(end) = 0.7 A; LB = 0.6 µH; -VBB = 2 V;
(-dIB/dt = 3.33 A / µs)
1.7
0.12
2.0
0.25
µs
µs
ts
tf
Turn-off storage time
Turn-off fall time
IC / mA
+ 50v
100-200R
250
Horizontal
200
Oscilloscope
100
Vertical
100R
1R
0
6V
VCE / V
30-60 Hz
min
VCEOsust
Fig.1. Test circuit for VCEOsust.
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
November 1995
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
I CM
TRANSISTOR
IC
BU2522A
VCC
DIODE
t
LC
IB
I B end
t
5 us
VCL
IBend
6.5 us
16 us
LB
CFB
T.U.T.
-VBB
VCE
t
Fig.6. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V;
LC = 100 - 400 µH; VCL ≤ 1500 V; LB = 3 µH;
CFB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A
Fig.3. Switching times waveforms (64 kHz).
ICM
100
90 %
h FE
BU2522A
Tj = 85 C
Tj = 25 C
IC
Tj = -40 C
10 %
10
tf
t
ts
IB
IBend
t
1
0.01
0.1
- IBM
Fig.4. Switching times definitions.
1
IC / A
10
100
Fig.7. Typical DC current gain. hFE = f (IC)
VCE = 5 V
+ 150 v nominal
adjust for ICM
1.2
VBESAT / V
BU2522A
Tj = 85 C
Tj = 25 C
1.1
1
Lc
0.9
0.8
IC/IB =
0.7
LB
IBend
T.U.T.
Cfb
BY228
3
5
0.6
0.5
-VBB
0.4
Fig.5. Switching times test circuit.
November 1995
0.1
1
IC / A
10
Fig.8. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
VCESAT / V
10
BU2522A
BU2522A
Tj = 85 C
Tj = 25 C
BU2522AF
ts, tf / us
4
3.5
3
1
2.5
IC/IB = 5
2
3
IC =
1.5
0.1
6A
1
5A
0.5
0.01
0.1
1
10
0
100
0
0.2 0.4 0.6 0.8
IC / A
VBESAT / V
BU2522A
Normalised Power Derating
PD%
120
110
Tj = 85 C
Tj = 25 C
1.1
2
Fig.12. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 64 kHz
Fig.9. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
1.2
1 1.2 1.4 1.6 1.8
IB / A
100
90
80
1
70
60
50
0.9
40
IC =
7A
6A
5A
0.8
0.7
30
20
10
0
0.6
0
0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8
IB / A
0
2
Fig.10. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
100
Poff / W
40
60
80
100
Tmb / C
BU2522AF
10
Zth / (K/W)
0.5
0.1
5A
0.2
0.1
0.05
0.02
PD
0.01
D=0
0.001
1E-06
1
0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8
IB / A
2
tp
D=
t
T
1E-04
1E-02
t/s
tp
T
1E+00
Fig.14. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Fig.11. Typical turn-off losses. Tj = 85˚C
Poff = f (IB); parameter IC; f = 64 kHz
November 1995
140
1
6A
0
120
Fig.13. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
IC =
10
20
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
IC / A
BU2522A
BU2520A
BU2522AF
IC / A
30
100
tp =
ICM
= 0.01
20
30 us
ICDC
10
10
100 us
0
Ptot
0
500
1000
1500
VCE / V
Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax
1
1 ms
0.1
10 ms
DC
0.01
1
10
100
1000
VCE / V
Fig.15. Forward bias safe operating area. Tmb = 25 ˚C
ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
November 1995
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522A
MECHANICAL DATA
Dimensions in mm
15.2
max
14
Net Mass: 5 g
4.6
max
13.6
2 max
4.25
4.15
2
4.4
21
max
12.7
max
2.2 max
0.5
min
dimensions within
this zone are
uncontrolled
1
2
5.5
13.6
min
3
1.15
0.95
0.5 M
0.4
1.6
11
Fig.17. SOT93; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".
November 1995
6
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1995
7
Rev 1.100
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