Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot VCEsat ICsat ts Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time VBE = 0 V PINNING - SOT93 PIN TYP. MAX. UNIT 6.0 1.7 1500 800 10 25 125 5.0 2.0 V V A A W V A µs Tmb ≤ 25 ˚C IC = 6.0 A; IB = 1.76 A ICM = 6.0 A; IB(end) = 0.7 A PIN CONFIGURATION SYMBOL DESCRIPTION c tab 1 base 2 collector 3 emitter tab collector b 1 2 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V average over any 20 ms period Tmb ≤ 25 ˚C MIN. MAX. UNIT -65 - 1500 800 10 25 6 9 150 6 125 150 150 V V A A A A mA A W ˚C ˚C TYP. MAX. UNIT - 1.0 K/W 45 - K/W THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Junction to mounting base Rth j-a Junction to ambient CONDITIONS in free air 1 Turn-off current. November 1995 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 2 ICES ICES Collector cut-off current IEBO BVEBO VCEOsust Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 6.0 A; IB = 1.76 A IC = 6.0 A; IB = 1.76 A IC = 1 A; VCE = 5 V IC = 6 A; VCE = 5 V MIN. TYP. MAX. UNIT - - 0.25 2.0 mA mA 7.5 800 13.5 - 0.25 - mA V V 8 5 10 7 5.0 1.3 21 8 V V DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF Switching times (64 kHz line deflection circuit) ICM = 6.0 A; LC = 170 µH; Cfb = 5.4 nF; IB(end) = 0.7 A; LB = 0.6 µH; -VBB = 2 V; (-dIB/dt = 3.33 A / µs) 1.7 0.12 2.0 0.25 µs µs ts tf Turn-off storage time Turn-off fall time IC / mA + 50v 100-200R 250 Horizontal 200 Oscilloscope 100 Vertical 100R 1R 0 6V VCE / V 30-60 Hz min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 2 Measured with half sine-wave voltage (curve tracer). November 1995 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor I CM TRANSISTOR IC BU2522A VCC DIODE t LC IB I B end t 5 us VCL IBend 6.5 us 16 us LB CFB T.U.T. -VBB VCE t Fig.6. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V; LC = 100 - 400 µH; VCL ≤ 1500 V; LB = 3 µH; CFB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A Fig.3. Switching times waveforms (64 kHz). ICM 100 90 % h FE BU2522A Tj = 85 C Tj = 25 C IC Tj = -40 C 10 % 10 tf t ts IB IBend t 1 0.01 0.1 - IBM Fig.4. Switching times definitions. 1 IC / A 10 100 Fig.7. Typical DC current gain. hFE = f (IC) VCE = 5 V + 150 v nominal adjust for ICM 1.2 VBESAT / V BU2522A Tj = 85 C Tj = 25 C 1.1 1 Lc 0.9 0.8 IC/IB = 0.7 LB IBend T.U.T. Cfb BY228 3 5 0.6 0.5 -VBB 0.4 Fig.5. Switching times test circuit. November 1995 0.1 1 IC / A 10 Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor VCESAT / V 10 BU2522A BU2522A Tj = 85 C Tj = 25 C BU2522AF ts, tf / us 4 3.5 3 1 2.5 IC/IB = 5 2 3 IC = 1.5 0.1 6A 1 5A 0.5 0.01 0.1 1 10 0 100 0 0.2 0.4 0.6 0.8 IC / A VBESAT / V BU2522A Normalised Power Derating PD% 120 110 Tj = 85 C Tj = 25 C 1.1 2 Fig.12. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 64 kHz Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB 1.2 1 1.2 1.4 1.6 1.8 IB / A 100 90 80 1 70 60 50 0.9 40 IC = 7A 6A 5A 0.8 0.7 30 20 10 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IB / A 0 2 Fig.10. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC 100 Poff / W 40 60 80 100 Tmb / C BU2522AF 10 Zth / (K/W) 0.5 0.1 5A 0.2 0.1 0.05 0.02 PD 0.01 D=0 0.001 1E-06 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IB / A 2 tp D= t T 1E-04 1E-02 t/s tp T 1E+00 Fig.14. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Fig.11. Typical turn-off losses. Tj = 85˚C Poff = f (IB); parameter IC; f = 64 kHz November 1995 140 1 6A 0 120 Fig.13. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) IC = 10 20 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor IC / A BU2522A BU2520A BU2522AF IC / A 30 100 tp = ICM = 0.01 20 30 us ICDC 10 10 100 us 0 Ptot 0 500 1000 1500 VCE / V Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax 1 1 ms 0.1 10 ms DC 0.01 1 10 100 1000 VCE / V Fig.15. Forward bias safe operating area. Tmb = 25 ˚C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. November 1995 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A MECHANICAL DATA Dimensions in mm 15.2 max 14 Net Mass: 5 g 4.6 max 13.6 2 max 4.25 4.15 2 4.4 21 max 12.7 max 2.2 max 0.5 min dimensions within this zone are uncontrolled 1 2 5.5 13.6 min 3 1.15 0.95 0.5 M 0.4 1.6 11 Fig.17. SOT93; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". November 1995 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 7 Rev 1.100