Weitron MMBT2222AW Npn general purpose transistor Datasheet

MMBT2222AW
3
1
2
SOT-323(SC-70)
VCEO
Value
150
833
TJ ,Tstg
-55 to+150
MMBT2222AW=P1
(1)
u
1. Pulse Test: Pulse Width
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300us, Duty Cycle
2.0%
MMBT2222AW
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
-
hFE
(IC=150mAdc, VCE=10 Vdc)
35
50
75
100
(IC=500 mAdc, VCE=10 Vdc)
40
Unit
ON CHARACTERISTICS (1)
DC Current Gain
(IC=0.1 mAdc, VCE=10 Vdc)
(IC=1.0 mAdc, VCE=10 Vdc)
(IC=10 mAdc, VCE=10 Vdc)
-
-
300
-
Collector-Emitter Saturation Voltage
(IC=150 mAdc, IB=15mAdc)
(IC=500 mAdc, IB=50mAdc)
VCE(sat)
-
1.0
Base-Emitter Saturation Voltage
(IC=150 mAdc, IB=15mAdc)
(IC=500 mAdc, IB=50mAdc)
VBE(sat)
0.6
-
1.2
2.0
fT
300
-
MHz
0.3
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC=20 mAdc, VCE=20 Vdc, f=100MHz)
Output Capacitance
(VCB=10 Vdc, IE=0, f=1.0MHz)
Cobo
-
8.0
pF
Input Capacitance
(VEB=0.5 Vdc, IC=0, f=1.0MHz)
Input Impedance
(IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz)
Cibo
-
25
pF
hie
0.25
1.25
kΩ
Voltage Feeback Radio
(IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz)
hre
-
4.0
x 10-4
S mall-S ignal C urrent G ain
(I C =10 mAdc, V C E =10V dc, f=1.0 kHz)
hfe
75
375
-
Output Admittance
(IC=10 mAdc, VCE=10Vdc, f=-1.0kHz)
hoe
25
200
µmhos
rb, Cc
-
150
ps
NF
-
4.0
dB
Collector Base Time Constant
(IE=20 mAdc, VCB=20 Vdc, f=31.8 MHz)
Noise Figure
(IC=100 µAdc, VCE=10Vdc, RS=1.0kΩ, f=1.0kHz)
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MMBT2222AW
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Symbol
Min
Max
(VCC=30 Vdc, VBE=(off)=-0.5Vdc,
IC=150 mAdc, IB1=15 mAdc)
td
-
10
tr
-
25
(VCC=30 Vdc, IC=150 mAdc,
IB1=IB2=15 mAdc)
ts
-
225
tf
-
60
Characteristics
Unit
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
Rise Time
Storage Time
Fall Time
ns
ns
3.Pulse Test:Pulse Width<
= 2.0%.
= 300 µs, Duty Cycle<
4.fT is defined as the frequency at which Ihfe extrapolates to unity.
Typical Pulsed Current Gain
vs Collector Current
500
VCE=5V
400
125 C
300
200
25 C
100
-40 C
0
0.1
0.3
1
3
10
30
Ic-COLLECTOR CURRENT (mA)
100
300
VCESAT COLLECTOR-EMITTER VOLTAGE (V)
hFE-TYPICAL PULSED CURRENT GAIN
Typical Characteristics
Collector- Emitter Saturation
Voltage vs Collector Current
0.4
b=10
0.3
125 C
0.2
25 C
0.1
-40 C
1
25 C
125 C
0.4
1
10
100
Ic-COLLECTOR CURRENT (mA)
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500
VBE(ON) BASE-EMITTER ON VOLTAGE (V)
VBESAT BASE-EMITTER VOLTAGE (V)
-40 C
0.6
500
Base-Emitter ON Voltage vs
Collector Current
b=10
0.8
100
Ic-COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
1
10
1
VCE=5V
0.8
-40 C
25 C
0.6
125 C
0.4
0.2
0.1
1
Ic-COLLECTOR CURRENT (mA)
10
25
MMBT2222AW
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
500
20
VCB=40V
100
CAPACITANCE(pF)
ICBO COLLECTOR CURRENT (nA)
C0llector-Cutoff Current vs
Ambient Temperature
10
1
0.1
f=1MHz
16
12
Cte
8
Cob
4
25
50
75
100
125
150
0.1
TA-AMBIENT TEMPERATURE ( C)
1
Turn On and Turn Off Times
vs Collector Current
1
IB1=IB2= c
10
IB1=IB2=
320
240
160
tOFF
80
10
240
tr
0
100
ts
160
80
tON
0
1c
10
Vcc=25V
Vcc=25V
TIME (nS)
TIME (nS)
320
100
Switching Times
vs Collector Current
400
400
10
REVERSE BIAS VOLTAGE (V)
1000
tf
td
10
100
Ic-COLLECTOR CURRENT(mA)
Ic-COLLECTOR CURRENT(mA)
Power Dissipation vs
Ambient Temperature
PD-POWER DISSIPATION (W)
1
0.75
0.5
SOT-23
0.25
0
0
25
50
75
100
TEMPERATURE( C)
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125
150
1000
MMBT2222AW
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MMBT2222AW
SOT-323 Outline Demensions
Unit:mm
A
B
T OP V IE W
C
D
E
G
H
K
J
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L
M
Dim
A
B
C
D
E
G
H
J
K
L
M
SOT-323
Min
0.30
1.15
2.00
0.30
1.20
1.80
0.00
0.80
0.42
0.10
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
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