MMBT2222AW 3 1 2 SOT-323(SC-70) VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max - hFE (IC=150mAdc, VCE=10 Vdc) 35 50 75 100 (IC=500 mAdc, VCE=10 Vdc) 40 Unit ON CHARACTERISTICS (1) DC Current Gain (IC=0.1 mAdc, VCE=10 Vdc) (IC=1.0 mAdc, VCE=10 Vdc) (IC=10 mAdc, VCE=10 Vdc) - - 300 - Collector-Emitter Saturation Voltage (IC=150 mAdc, IB=15mAdc) (IC=500 mAdc, IB=50mAdc) VCE(sat) - 1.0 Base-Emitter Saturation Voltage (IC=150 mAdc, IB=15mAdc) (IC=500 mAdc, IB=50mAdc) VBE(sat) 0.6 - 1.2 2.0 fT 300 - MHz 0.3 Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC=20 mAdc, VCE=20 Vdc, f=100MHz) Output Capacitance (VCB=10 Vdc, IE=0, f=1.0MHz) Cobo - 8.0 pF Input Capacitance (VEB=0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz) Cibo - 25 pF hie 0.25 1.25 kΩ Voltage Feeback Radio (IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz) hre - 4.0 x 10-4 S mall-S ignal C urrent G ain (I C =10 mAdc, V C E =10V dc, f=1.0 kHz) hfe 75 375 - Output Admittance (IC=10 mAdc, VCE=10Vdc, f=-1.0kHz) hoe 25 200 µmhos rb, Cc - 150 ps NF - 4.0 dB Collector Base Time Constant (IE=20 mAdc, VCB=20 Vdc, f=31.8 MHz) Noise Figure (IC=100 µAdc, VCE=10Vdc, RS=1.0kΩ, f=1.0kHz) WEITRON http://www.weitron.com.tw MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Symbol Min Max (VCC=30 Vdc, VBE=(off)=-0.5Vdc, IC=150 mAdc, IB1=15 mAdc) td - 10 tr - 25 (VCC=30 Vdc, IC=150 mAdc, IB1=IB2=15 mAdc) ts - 225 tf - 60 Characteristics Unit SWITCHING CHARACTERISTICS (MMBT2222A only) Delay Time Rise Time Storage Time Fall Time ns ns 3.Pulse Test:Pulse Width< = 2.0%. = 300 µs, Duty Cycle< 4.fT is defined as the frequency at which Ihfe extrapolates to unity. Typical Pulsed Current Gain vs Collector Current 500 VCE=5V 400 125 C 300 200 25 C 100 -40 C 0 0.1 0.3 1 3 10 30 Ic-COLLECTOR CURRENT (mA) 100 300 VCESAT COLLECTOR-EMITTER VOLTAGE (V) hFE-TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector- Emitter Saturation Voltage vs Collector Current 0.4 b=10 0.3 125 C 0.2 25 C 0.1 -40 C 1 25 C 125 C 0.4 1 10 100 Ic-COLLECTOR CURRENT (mA) WEITRON http://www.weitron.com.tw 500 VBE(ON) BASE-EMITTER ON VOLTAGE (V) VBESAT BASE-EMITTER VOLTAGE (V) -40 C 0.6 500 Base-Emitter ON Voltage vs Collector Current b=10 0.8 100 Ic-COLLECTOR CURRENT (mA) Base-Emitter Saturation Voltage vs Collector Current 1 10 1 VCE=5V 0.8 -40 C 25 C 0.6 125 C 0.4 0.2 0.1 1 Ic-COLLECTOR CURRENT (mA) 10 25 MMBT2222AW Emitter Transition and Output Capacitance vs Reverse Bias Voltage 500 20 VCB=40V 100 CAPACITANCE(pF) ICBO COLLECTOR CURRENT (nA) C0llector-Cutoff Current vs Ambient Temperature 10 1 0.1 f=1MHz 16 12 Cte 8 Cob 4 25 50 75 100 125 150 0.1 TA-AMBIENT TEMPERATURE ( C) 1 Turn On and Turn Off Times vs Collector Current 1 IB1=IB2= c 10 IB1=IB2= 320 240 160 tOFF 80 10 240 tr 0 100 ts 160 80 tON 0 1c 10 Vcc=25V Vcc=25V TIME (nS) TIME (nS) 320 100 Switching Times vs Collector Current 400 400 10 REVERSE BIAS VOLTAGE (V) 1000 tf td 10 100 Ic-COLLECTOR CURRENT(mA) Ic-COLLECTOR CURRENT(mA) Power Dissipation vs Ambient Temperature PD-POWER DISSIPATION (W) 1 0.75 0.5 SOT-23 0.25 0 0 25 50 75 100 TEMPERATURE( C) WEITRON http://www.weitron.com.tw 125 150 1000 MMBT2222AW WEITRON http://www.weitron.com.tw MMBT2222AW SOT-323 Outline Demensions Unit:mm A B T OP V IE W C D E G H K J WEITRON http://www.weitron.com.tw L M Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25