BC546A/B/C - BC547A/B/C-BC548A/B/C
NPN SILICON AMPLIFIER TRANSISTOR
TO-92
Features
!•
!•
A
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
B
!•
Through Hole Package
150 οC Junction Temperature
Epoxy meets UL 94 V-0 flammability rating
!•
Moisure Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
!•
!•
E
C
Mechanical Data
•
!
!
•
Case: TO-92, Molded Plastic
Polarity:indicated as below
D
C
B
C
E
B
E
STRAIGHT LEAD BENT LEAD
BULK PACK AMMO PACK
G
DIMENSIONS
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
.173
MM
MAX
.185
.185
--.020
.145
.105
.220
MIN
4.45
4.45
12.70
0.41
3.43
2.42
4.40
MAX
4.70
4.70
--0.63
3.68
2.67
5.60
NOTE
Straight Lead
Bent Lead
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
Maximum Ratings and Electrical Characteristics
TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Charateristic
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
BC546
BC547
BC548
BC546
BC547
BC548
VCEO
VCBO
Emitter-Base Voltage
VEBO
Collector Current(DC)
IC
Power Dissipation@TA=25oC
Pd
Power Dissipation@TC=25oC
Pd
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to
Case
Operating & Storage Temperature
1 of 4
Value
65
45
30
80
50
30
6.0
Unit
100
625
5.0
1.5
12
mA
V
V
V
mW
mW/oC
W
mW/oC
RqJA
200
o
RqJC
83.3
o
Tj, TSTG
-55~150
C/W
C/W
o
C
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
BC546
BC547
BC548
V(BR)CEO
65
45
30
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage
(IC = 100 µAdc)
BC546
BC547
BC548
V(BR)CBO
80
50
30
—
—
—
—
—
—
V
Emitter–Base Breakdown Voltage
(IE = 10 mA, IC = 0)
BC546
BC547
BC548
V(BR)EBO
6.0
6.0
6.0
—
—
—
—
—
—
V
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
hFE
—
BC546A/547A/548A
BC546B/547B/548B
BC546C/547C/548C
—
—
—
90
150
270
—
—
—
(IC = 2.0 mA, VCE = 5.0 V)
BC546A/547A/548A
BC546B/547B/548B
BC546C/547C/548C
110
200
420
180
290
520
220
450
800
(IC = 100 mA, VCE = 5.0 V)
BC546A/547A/548A
BC546B/547B/548B
BC546C/547C/548C
—
—
—
120
180
300
—
—
—
—
---
0.3
—
—
1.0
0.55
—
—
—
0.7
0.77
150
150
150
300
300
300
—
—
—
Collector–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
Base–Emitter On Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)
V
V
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
BC546
BC547
BC548
MHz
Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cobo
—
1.7
4.5
pF
Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cibo
—
10
—
pF
Small–Signal Current Gain
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
hfe
BC546A/547A/548A
BC546B/547B/548B
BC546C/547C/548C
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW,
f = 1.0 kHz, ∆f = 200 Hz)
—
125
240
450
220
330
600
260
500
900
—
—
—
2.0
2.0
2.0
10
10
10
NF
BC546
BC547
BC548
2 of 4
dB
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1.0
VCE = 10 V
TA = 25°C
1.5
0.8
1.0
0.8
0.6
0.4
VBE(sat) @ IC/IB = 10
0.7
VBE(on) @ VCE = 10 V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat) @ IC/IB = 10
0.1
0.2
0.2
0.5
50
2.0
5.0 10
1.0
20
IC, COLLECTOR CURRENT (mAdc)
100
0
0.1
200
Figure 1. Normalized DC Current Gain
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
0.8
IC = 50 mA
IC = 100 mA
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (mAdc)
50 70 100
Figure 2. “Saturation” and “On” Voltages
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
TA = 25°C
0.9
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 3. Collector Saturation Region
100
Figure 4. Base–Emitter Temperature Coefficient
10
C, CAPACITANCE (pF)
7.0
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
Figure 5. Capacitances
40
fă,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
BC547/BC548
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 6. Current–Gain – Bandwidth Product
3 of 4
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TA = 25°C
VCE = 5 V
TA = 25°C
0.8
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
1.0
2.0
1.0
0.5
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0
10
100
1.0
IC, COLLECTOR CURRENT (mA)
0.1 0.2
0.2
0.5
1.0
2.0
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
50
100
200
50
100
200
Figure 8. “On” Voltage
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
10 20
2.0
5.0
IC, COLLECTOR CURRENT (mA)
5.0
10
20
-1.0
-1.4
-1.8
θVB for VBE
-55°C to 125°C
-2.2
-2.6
-3.0
Figure 9. Collector Saturation Region
0.2
0.5
10 20
5.0
1.0 2.0
IC, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
BC546
fă,
T CURRENT-GAIN - BANDWIDTH PRODUCT
40
C, CAPACITANCE (pF)
TA = 25°C
20
Cib
10
6.0
Cob
4.0
2.0
0.1
0.2
0.5
1.0 2.0
5.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
50
Figure 11. Capacitance
100
500
VCE = 5 V
TA = 25°C
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
4 of 4
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