Linear LS358 Log conformance monolithic dual pnp transistor Datasheet

LS358
LOG CONFORMANCE
MONOLITHIC DUAL
PNP TRANSISTORS
FEATURES
LOG CONFORMANCE
∆re ≤1Ω from ideal TYP.
5
ABSOLUTE MAXIMUM RATINGS NOTE 1
(TA= 25°C unless otherwise noted)
IC
Collector-Current
-10mA
6
Maximum Temperatures
Storage Temperature Range
-65°C to +150°C
Operating Junction Temperature
-55°C to +150°C
Maximum Power Dissipation
ONE SIDE
7
TO-71 & TO-78
TOP VIEW
BOTH SIDES
Device Dissipation TA=25°C
250mW
500mW
Linear Derating Factor
2.3mW/°C
4.3mW/°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
LS358
∆re
Log Conformance
1.5
BVCBO
Collector-Base Breakdown Voltage
-20
BVCEO
Collector to Emitter Voltage
BVEBO
Emitter-Base Breakdown Voltage
BVCCO
hFE
hFE
UNITS
CONDITIONS
Ω
IC = -10-100-1000µA
MIN.
V
IC = -10µA
IE = 0A
-20
MIN.
V
IC = -10µA
IB = 0A
-6.0
MIN.
V
IE = -10µA
IC = 0A NOTE 2
Collector to Collector Voltage
45
MIN.
V
IC = ±10µA, IB=IE = 0A
DC Current Gain
100
MIN.
600
MAX.
100
MIN.
600
MAX.
DC Current Gain
VCE = -5V
IC = -10µA
VCE = -5V
IC = -100µA
VCE = -5V
hFE
DC Current Gain
100
MIN.
IC = -1mA
VCE = -5V
VCE(SAT)
Collector Saturation Voltage
-0.5
MAX.
V
IC = -1mA
IB = -0.1mA
ICBO
Collector Cutoff Current
-0.2
MAX.
nA
IE = 0A
VCB = -15V
IEBO
Emitter Cutoff Current
-0.2
MAX.
nA
IC = 0A
VEB = -3V
COBO
Output Capacitance4
2.0
MAX.
pF
IE = 0A
VCB = -5V
2.0
MAX.
pF
VCC = 0V
MAX.
µA
VCC = ±45V
IB = IE = 0A
MIN.
MAX.
MHz
dB
IC = -1mA
IC = -100µA
BW = 200Hz
f=1KHz
VCE = -5V
VCE = -5V
RG = 10 KΩ
Capacitance4
CC1C2
Collector to Collector
IC1C2
Collector to Collector Leakage Current ±0.5
fT
NF
Product4
Current Gain Bandwidth
Narrow Band Noise Figure4
Linear Integrated Systems
200
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• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201158 05/16/2014 Rev#A9 ECN# LS358
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
LS358
UNITS
│VBE1-VBE2│
Base Emitter Voltage Differential
0.4
TYP.
mV
1
MAX.
mV
∆│(VBE1-VBE2)│/°C
Base Emitter Voltage Differential4
1
TYP.
µV/°C
Change with Temperature
CONDITIONS
IC = -10 µA
VCE = -5V
IC = -10 µA
VCE = -5V
TA = -55°C to +125°C
│IB1-IB2│
Base Current Differential
5
MAX.
nA
IC = -10 µA
VCE = -5V
│∆ (IB1-IB2)│/°C
Base Current Differential4
0.5
TYP.
nA/°C
IC = -10 µA
VCE = -5V
Change with Temperature
hFE1/hFE2
DC Current Gain Differential
TA = -55°C to +125°C
5
TYP.
%
IC = -10 µA
VCE = -5V
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.0 volts; the reverse base-to-emitter current must never exceed 10 µA.
3. All MIN/TYP/MAX Limits are absolute values. Negative signs indicate electrical polarity only.
4. Not tested; guaranteed by design.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use;
nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
5.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality
discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil
and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the
director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro
Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201158 05/16/2014 Rev#A9 ECN# LS358
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