LS358 LOG CONFORMANCE MONOLITHIC DUAL PNP TRANSISTORS FEATURES LOG CONFORMANCE ∆re ≤1Ω from ideal TYP. 5 ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) IC Collector-Current -10mA 6 Maximum Temperatures Storage Temperature Range -65°C to +150°C Operating Junction Temperature -55°C to +150°C Maximum Power Dissipation ONE SIDE 7 TO-71 & TO-78 TOP VIEW BOTH SIDES Device Dissipation TA=25°C 250mW 500mW Linear Derating Factor 2.3mW/°C 4.3mW/°C ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC LS358 ∆re Log Conformance 1.5 BVCBO Collector-Base Breakdown Voltage -20 BVCEO Collector to Emitter Voltage BVEBO Emitter-Base Breakdown Voltage BVCCO hFE hFE UNITS CONDITIONS Ω IC = -10-100-1000µA MIN. V IC = -10µA IE = 0A -20 MIN. V IC = -10µA IB = 0A -6.0 MIN. V IE = -10µA IC = 0A NOTE 2 Collector to Collector Voltage 45 MIN. V IC = ±10µA, IB=IE = 0A DC Current Gain 100 MIN. 600 MAX. 100 MIN. 600 MAX. DC Current Gain VCE = -5V IC = -10µA VCE = -5V IC = -100µA VCE = -5V hFE DC Current Gain 100 MIN. IC = -1mA VCE = -5V VCE(SAT) Collector Saturation Voltage -0.5 MAX. V IC = -1mA IB = -0.1mA ICBO Collector Cutoff Current -0.2 MAX. nA IE = 0A VCB = -15V IEBO Emitter Cutoff Current -0.2 MAX. nA IC = 0A VEB = -3V COBO Output Capacitance4 2.0 MAX. pF IE = 0A VCB = -5V 2.0 MAX. pF VCC = 0V MAX. µA VCC = ±45V IB = IE = 0A MIN. MAX. MHz dB IC = -1mA IC = -100µA BW = 200Hz f=1KHz VCE = -5V VCE = -5V RG = 10 KΩ Capacitance4 CC1C2 Collector to Collector IC1C2 Collector to Collector Leakage Current ±0.5 fT NF Product4 Current Gain Bandwidth Narrow Band Noise Figure4 Linear Integrated Systems 200 3.0 • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201158 05/16/2014 Rev#A9 ECN# LS358 MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC LS358 UNITS │VBE1-VBE2│ Base Emitter Voltage Differential 0.4 TYP. mV 1 MAX. mV ∆│(VBE1-VBE2)│/°C Base Emitter Voltage Differential4 1 TYP. µV/°C Change with Temperature CONDITIONS IC = -10 µA VCE = -5V IC = -10 µA VCE = -5V TA = -55°C to +125°C │IB1-IB2│ Base Current Differential 5 MAX. nA IC = -10 µA VCE = -5V │∆ (IB1-IB2)│/°C Base Current Differential4 0.5 TYP. nA/°C IC = -10 µA VCE = -5V Change with Temperature hFE1/hFE2 DC Current Gain Differential TA = -55°C to +125°C 5 TYP. % IC = -10 µA VCE = -5V NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.0 volts; the reverse base-to-emitter current must never exceed 10 µA. 3. All MIN/TYP/MAX Limits are absolute values. Negative signs indicate electrical polarity only. 4. Not tested; guaranteed by design. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. 5. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201158 05/16/2014 Rev#A9 ECN# LS358