NPT1004 Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz • 2500MHz performance • 45W P3dB CW power • 13.5 dB small signal gain • 55% efficiency at P3dB • 100% RF tested • Low cost, surface mount SOIC package • High reliability gold metallization process • Lead-free and RoHS compliant • Subject to EAR99 Export Control DC - 4000MHz 45 Watt, 28 Volt GaN HEMT RF Specifications (2-Tone): VDS = 28V, IDQ = 400mA, Frequency = 2500MHz, Tone Spacing = 1MHz, TC = 25°C, Measured in Nitronex Test Fixture Symbol Parameter Min Typ Max Units P3dB Average Output Power at 3dB Compression 35 45 - W P1dB Average Output Power at 1dB Compression - 28 - W GSS Small Signal Gain 12.5 13.5 - dB 50 55 - % h Drain Efficiency at 3dB Gain Compression Typical OFDM Performance (2500-2700MHz): VDS = 28V, IDQ = 350mA, POUT,AVG = 37dBm, single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF. TC = 25°C. Measured in Load Pull System (Refer to Table 2 and Figure 1) Symbol EVM GP h Parameter Typ Units Error Vector Magnitude 2.0 % Power Gain 13.0 dB 27 % Drain Efficiency Typical OFDM Performance (3300-3500MHz): VDS = 28V, IDQ = 350mA, POUT,AVG = 36.5dBm, single carrier OFDM waveform 64-QAM 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF. TC = 25°C. Measured in Load Pull System (Refer to Table 2 and Figure 1) Symbol EVM GP h NPT1004 Parameter Typ Units Error Vector Magnitude 2.0 % Power Gain 10.5 dB 25 % Drain Efficiency Page 1 NDS-010 Rev. 4, April 2013 NPT1004 DC Specifications: TC=25°C Symbol Parameter Min Typ Max Units 100 - - V - 2 10 mA Off Characteristics VBDS Drain-Source Breakdown Voltage (VGS = -8V, ID = 16mA) IDLK Drain-Source Leakage Current (VGS = -8V, VDS = 60V) On Characteristics VT Gate Threshold Voltage (VDS = 28V, ID = 16mA) -2.3 -1.8 -1.3 V VGSQ Gate Quiescent Voltage (VDS = 28V, ID = 350mA) -2.0 -1.5 -1.0 V RON On Resistance (VGS = 2V, ID = 120mA) - 0.25 0.30 W 7.5 9.5 - A ID Drain Current (VDS = 7V pulsed, 300ms pulse width, 0.2% duty cycle, VGS = 2V) Absolute Maximum Ratings: Not simultaneous, TC=25°C unless otherwise noted Symbol Parameter Max Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage -10 to 3 V PT Total Device Power Dissipation (Derated above 25°C) 40 W qJC Thermal Resistance (Junction-to-Case) 4.3 °C/W -65 to 150 °C 200 °C TSTG TJ Storage Temperature Range Operating Junction Temperature HBM Human Body Model ESD Rating (per JESD22-A114) MM Machine Model ESD Rating (per JESD22-A113) MSL Moisture Sensitivity Level (per IPC/JEDEC J-STD-020): Rating of 3 at 260 °C Package Peak Temperature NPT1004 Page 2 1B (>500V) M1(>50V) NDS-010 Rev. 4, April 2013 NPT1004 Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ =350mA, TA=25°C unless otherwise noted Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance Frequency (MHz) ZS (W) ZL (W) PSAT (W) GSS (dB) Drain Efficiency @ PSAT (%) 900 2.0 + j2.7 6.0 + j3.3 45 22.5 72 1500 1.6 - j0.8 4.5 + j0.5 45 18.5 70 2500 2.0 - j3.2 3.5 - j5.0 45 14.0 65 3500 3.2 - j6.5 2.9 - j8.0 35 12.0 60 Table 2: Optimum Source and Load Impedances for WiMAX Gain, Drain Efficiency, Output Power, and Linearity Performance Frequency (MHz) ZS (W) ZL (W) POUT (W) Gain (dB) Drain Efficiency (%) 25001 2.1 - j7.6 3.1 - j3.9 5 14.0 27 26001 2.3 - j7.7 3.3 - j4.4 5 13.0 27 27001 2.3 - j9.0 3.4 - j4.7 5 13.0 27 33002 3.3 - j11.8 3.7 - j7.2 6.3 11.5 30 35002 3.5 - j13.5 3.5 - j10.0 4.5 10.5 25 38002 4.5 - j16.2 3.7 - j11.2 3.2 8.0 17 Note 1: Single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF, 2% EVM. Note 2: Single carrier OFDM waveform 64-QAM 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF, 2% EVM. ZS is the source impedance presented to the device. ZL is the load impedance presented to the device. (a) CW Impedances (b) OFDM Impedances Figure 1 - Optimal Impedances for CW and OFDM Performance NPT1004 Page 3 NDS-010 Rev. 4, April 2013 NPT1004 Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ =350mA, TA=25°C unless otherwise noted. Figure 2 - Typical CW Performance, Frequency = 900 to 3500MHz, IDQ=400mA Figure 3 - OFDM Performance Tuned for POUT at 2% EVM in Load-Pull System Figure 4 - OFDM Performance Tuned for POUT at 1.5% EVM in Load-Pull System Figure 5 - OFDM Performance Tuned for POUT at 2% EVM in Load-Pull System Figure 6 - Quiescient Gate Voltage (VGSQ) Required to Reach IDQ as a Function of Case Temperature NPT1004 Page 4 Figure 7 - MTTF of NRF1 devices as a function of junction temperature NDS-010 Rev. 4, April 2013 NPT1004 Ordering Information Part Number Order Multiple NPT1004DT 97 NPT1004DR 1500 Description Tube; NPT1004 in D (PSOP2) Package Tape and Reel; NPT1004 in D (PSOP2) Package 1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com D Package Dimensions and Pinout Inches Millimeters A Dim Min Max Min Max C A 0.189 0.196 4.80 4.98 B 0.150 0.157 3.81 3.99 C 0.107 0.123 2.72 3.12 8 D B 7 E 6 NC 1.1.Gate 2.2.Gate Gate 3. Gate 3. Gate 4. Gate NC 5.4.Drain 6.5.Drain NC 7.6.Drain Drain 8. Drain 7. Drain 9. Source Pad 8. NC (Bottom) 5 9 D/2 1 2 3 4 Chamfer A/2 H G G1 SEATING PLANE 9. Source Pad (Bottom) D 0.071 0.870 1.80 2.21 E 0.230 0.244 5.84 6.22 f F 0.50 BSC 0.0138 0.0192 1.270 BSC 0.35 0.49 G 0.055 0.065 1.40 1.65 G1 0.000 0.004 0.00 0.10 H 0.0075 0.0098 0.19 0.25 L 0.016 0.035 0.40 0.89 m 0° 8° 0° 8° m L SEATING PLANE F (8X) f (6X) Mounting Footprints .150 .055 .105 .100 .180 .030 PWB Pad (8X Typ) NPT1004 Solder Paste .020" X .040" (8X Typ) R.016 (4X Typ) .140 .145 .176 Heat Sink Pedestal PWB Cutout Solder Mask .005" Relief (Typ) Solder Paste .080" X .120" (Typ) Page 5 NDS-010 Rev. 4, April 2013 NPT1004 Nitronex, LLC 2305 Presidential Drive Durham, NC 27703 USA +1.919.807.9100 (telephone) +1.919.807.9200 (fax) [email protected] www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). 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All other product or service names are the property of their respective owners. © Nitronex, LLC 2012. All rights reserved. NPT1004 Page 6 NDS-010 Rev. 4, April 2013