Vishay BAT43-TAP Schottky diode Datasheet

BAT42/BAT43
Vishay Semiconductors
Schottky Diodes
Features
• For general purpose applications
• These diodes feature very low turn-on
e2
voltage and fast guard ring against excessive voltage, such as electrostatic discharges
• These diodes are also available in the SOD123
case with the type designations BAT42W-V to
BAT43W-V and in MiniMELF SOD80 case with the
type designations LL42 to LL43.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
94 9367
Mechanical Data
Case: DO35 Glass Case
Weight: approx. 125 mg
Cathode Band Color: black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammo tape (52 mm tape), 50 k/box
Parts Table
Ordering code
Type Marking
Remarks
BAT42
Part
BAT42-TR or BAT42-TAP
BAT42
Tape and Reel/Ammopack
BAT43
BAT43-TR or BAT43-TAP
BAT43
Tape and Reel/Ammopack
/
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Value
VRRM
30
Unit
V
1)
mA
IFRM
5001)
mA
tp < 10 ms, Tamb = 25 °C
IFSM
41)
A
Tamb = 65 °C
Ptot
2001)
mW
Forward continuous current
Tamb = 25 °C
Repetitive peak forward current
tp < 1 s, δ < 0.5, Tamb = 25 °C
Surge forward current
Power dissipation1)
1)
Symbol
IF
200
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Document Number 85660
Rev. 1.5, 27-Feb-07
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BAT42/BAT43
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Symbol
Value
Unit
RthJA
3001)
K/W
Tj
125
°C
Ambient operating temperature range
Tamb
- 65 to + 125
°C
Storage temperature range
Tstg
- 65 to +150
°C
Junction temperature
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
1)
Leakage current
1)
Part
IR = 100 µA (pulsed)
Symbol
Min
V(BR)
30
Unit
V
VR = 25 V
IR
0.5
µA
IR
100
µA
VF
1000
mV
IF = 10 mA
BAT42
VF
400
mV
IF = 50 mA
BAT42
VF
650
mV
IF = 2 mA
BAT43
VF
IF = 15 mA
BAT43
VF
Diode capacitance
VR = 1 V, f = 1 MHz
CD
Reverse recovery time
IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 Ω
trr
Rectification efficieny
RL = 15 kΩ, CL = 300 pF,
f = 45 MHz, VRF = 2 V
ηv
1)
Max
VR = 25 V, Tj = 100 °C
IF = 200 mA
Forward voltage
Typ.
260
330
mV
450
mV
7
pF
5
80
ns
%
Pulse test tp < 300 µs, tp/T < 0.02
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
I F - Forward Current (mA)
Ptot - Power Dissipation (mW)
250
200
150
100
50
0
0
18442
50
100
150
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
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2
125 °C
- 40 °C
10
25 °C
1
0.1
0.01
200
Tamb - Ambient Temperature (°C)
100
0
18443
200
400
600 800 1000 1200
VF - Instantaneous Forward Voltage (mV)
Figure 2. Typical Reverse Characteristics
Document Number 85660
Rev. 1.5, 27-Feb-07
BAT42/BAT43
Vishay Semiconductors
14
125 °C
100
CD - Diode Capacitance (pF)
IR - Reverse Leackage Current (µA)
1000
100 °C
75 °C
10
50 °C
1
25 °C
0.1
12
10
8
6
4
2
0
0.01
0
10
20
30
40
VR - Reverse Voltage (V)
18444
50
0
18445
Figure 3. Typical Reverse Characteristics
5
10
15
20
25
30
VR - Reverse Voltage (V)
Figure 4. Typical Capacitance vs. Reverse Voltage
Package Dimensions in millimeters (inches): DO35
3.9 max. (0.154)
26 min. (1.024)
1.5 (0.059)
26 min. (1.024)
1.7 (0.067)
0.55 max. (0.022)
Cathode Identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 85660
Rev. 1.5, 27-Feb-07
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3
BAT42/BAT43
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85660
Rev. 1.5, 27-Feb-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
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