Zetex BAV99 Sot23 silicon planar high speed switching series diode pair Datasheet

SOT23 SILICON PLANAR HIGH SPEED
SWITCHING SERIES DIODE PAIR
BAV99
BAV99
ISSUE 2 - MAY 1995
SWITCHING CIRCUIT
PIN CONFIGURATIONS
1
Recovery Time Equivalent Test Circuit
Pulse Generator
0.2µF
VIN= 1V
RS
= 50Ω
DUT
1kΩ
PARTMARKING DETAILS
BAV99...........A7
Sampling Oscilloscope
C< 1.0pF
RIN = 50Ω
3
0.1µF
+
-
2
1
3
SOT23
2
VB
ABSOLUTE MAXIMUM RATINGS.
IF
Pulse rise time < = 0.5ns
Pulse width = 100ns
Oscilloscope rise time < 0.35ns
Adjust VB for IF= 10mA
IR= 1mA
trr
Output Waveform
† Above switching diagram also applies to device types
–
–
–
–
BAL99
BAR99
BAW56
BAV70
PARAMETER
SYMBOL
Continuous Reverse Voltage
VR
Repetitive Peak Reverse Voltage
VRRM
70
V
Average Rectified Forward Current
( over any 20mS Period)
IF(AV)
100
mA
Repetitive Peak Forward Current
IFRM
200
mA
Peak Forward Surge Current
I FM(SURGE)
500
mA (dc)
330
mW
-55 to +150
°C
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
VALUE
UNIT
70
V
CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Forward Voltage
VF
715
855
1.1
1.3
mV
mV
V
V
IF=1mA
IF=10mA
IF=50mA
IF=100mA
Reverse Current
IR
30
2.5
50
µA
µA
µA
VR=25V, Tamb=150°C
VR=70V
VR=70V, Tamb=150°C
Diode Capacitance
CD
1.5
pF
f=1MHz
Forward Recovery
Voltage
Vfr
1.75
V
Switched to
IF=10mA, tr=20ns
Reverse Recovery
Time
trr
6
ns
Switched from
IF=10mA, VR=1V
RL=100Ω ,IR=1mA
Spice parameter data is available upon request for this device
PAGE NO
MAX. UNIT
CONDITIONS.
SOT23 SILICON PLANAR HIGH SPEED
SWITCHING SERIES DIODE PAIR
BAV99
BAV99
ISSUE 2 - MAY 1995
SWITCHING CIRCUIT
PIN CONFIGURATIONS
1
Recovery Time Equivalent Test Circuit
Pulse Generator
0.2µF
VIN= 1V
RS
= 50Ω
DUT
1kΩ
PARTMARKING DETAILS
BAV99...........A7
Sampling Oscilloscope
C< 1.0pF
RIN = 50Ω
3
0.1µF
+
-
2
1
3
SOT23
2
VB
ABSOLUTE MAXIMUM RATINGS.
IF
Pulse rise time < = 0.5ns
Pulse width = 100ns
Oscilloscope rise time < 0.35ns
Adjust VB for IF= 10mA
IR= 1mA
trr
Output Waveform
† Above switching diagram also applies to device types
–
–
–
–
BAL99
BAR99
BAW56
BAV70
PARAMETER
SYMBOL
Continuous Reverse Voltage
VR
Repetitive Peak Reverse Voltage
VRRM
70
V
Average Rectified Forward Current
( over any 20mS Period)
IF(AV)
100
mA
Repetitive Peak Forward Current
IFRM
200
mA
Peak Forward Surge Current
I FM(SURGE)
500
mA (dc)
330
mW
-55 to +150
°C
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
VALUE
UNIT
70
V
CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Forward Voltage
VF
715
855
1.1
1.3
mV
mV
V
V
IF=1mA
IF=10mA
IF=50mA
IF=100mA
Reverse Current
IR
30
2.5
50
µA
µA
µA
VR=25V, Tamb=150°C
VR=70V
VR=70V, Tamb=150°C
Diode Capacitance
CD
1.5
pF
f=1MHz
Forward Recovery
Voltage
Vfr
1.75
V
Switched to
IF=10mA, tr=20ns
Reverse Recovery
Time
trr
6
ns
Switched from
IF=10mA, VR=1V
RL=100Ω ,IR=1mA
Spice parameter data is available upon request for this device
PAGE NO
MAX. UNIT
CONDITIONS.
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