SOT23 SILICON PLANAR HIGH SPEED SWITCHING SERIES DIODE PAIR BAV99 BAV99 ISSUE 2 - MAY 1995 SWITCHING CIRCUIT PIN CONFIGURATIONS 1 Recovery Time Equivalent Test Circuit Pulse Generator 0.2µF VIN= 1V RS = 50Ω DUT 1kΩ PARTMARKING DETAILS BAV99...........A7 Sampling Oscilloscope C< 1.0pF RIN = 50Ω 3 0.1µF + - 2 1 3 SOT23 2 VB ABSOLUTE MAXIMUM RATINGS. IF Pulse rise time < = 0.5ns Pulse width = 100ns Oscilloscope rise time < 0.35ns Adjust VB for IF= 10mA IR= 1mA trr Output Waveform Above switching diagram also applies to device types BAL99 BAR99 BAW56 BAV70 PARAMETER SYMBOL Continuous Reverse Voltage VR Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current ( over any 20mS Period) IF(AV) 100 mA Repetitive Peak Forward Current IFRM 200 mA Peak Forward Surge Current I FM(SURGE) 500 mA (dc) 330 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg VALUE UNIT 70 V CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Forward Voltage VF 715 855 1.1 1.3 mV mV V V IF=1mA IF=10mA IF=50mA IF=100mA Reverse Current IR 30 2.5 50 µA µA µA VR=25V, Tamb=150°C VR=70V VR=70V, Tamb=150°C Diode Capacitance CD 1.5 pF f=1MHz Forward Recovery Voltage Vfr 1.75 V Switched to IF=10mA, tr=20ns Reverse Recovery Time trr 6 ns Switched from IF=10mA, VR=1V RL=100Ω ,IR=1mA Spice parameter data is available upon request for this device PAGE NO MAX. UNIT CONDITIONS. SOT23 SILICON PLANAR HIGH SPEED SWITCHING SERIES DIODE PAIR BAV99 BAV99 ISSUE 2 - MAY 1995 SWITCHING CIRCUIT PIN CONFIGURATIONS 1 Recovery Time Equivalent Test Circuit Pulse Generator 0.2µF VIN= 1V RS = 50Ω DUT 1kΩ PARTMARKING DETAILS BAV99...........A7 Sampling Oscilloscope C< 1.0pF RIN = 50Ω 3 0.1µF + - 2 1 3 SOT23 2 VB ABSOLUTE MAXIMUM RATINGS. IF Pulse rise time < = 0.5ns Pulse width = 100ns Oscilloscope rise time < 0.35ns Adjust VB for IF= 10mA IR= 1mA trr Output Waveform Above switching diagram also applies to device types BAL99 BAR99 BAW56 BAV70 PARAMETER SYMBOL Continuous Reverse Voltage VR Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current ( over any 20mS Period) IF(AV) 100 mA Repetitive Peak Forward Current IFRM 200 mA Peak Forward Surge Current I FM(SURGE) 500 mA (dc) 330 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg VALUE UNIT 70 V CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Forward Voltage VF 715 855 1.1 1.3 mV mV V V IF=1mA IF=10mA IF=50mA IF=100mA Reverse Current IR 30 2.5 50 µA µA µA VR=25V, Tamb=150°C VR=70V VR=70V, Tamb=150°C Diode Capacitance CD 1.5 pF f=1MHz Forward Recovery Voltage Vfr 1.75 V Switched to IF=10mA, tr=20ns Reverse Recovery Time trr 6 ns Switched from IF=10mA, VR=1V RL=100Ω ,IR=1mA Spice parameter data is available upon request for this device PAGE NO MAX. UNIT CONDITIONS.