Microsemi JAN2N4150 Npn power silicon transistor Datasheet

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
DEVICES
LEVELS
2N4150
2N4150S
2N5237
2N5237S
2N5238
2N5238S
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Symbol
2N4150
2N4150S
2N5237
2N5237S
2N5238
2N5238S
Unit
Collector-Emitter Voltage
VCEO
70
120
170
Vdc
Collector-Base Voltage
VCBO
100
150
200
Vdc
Emitter-Base Voltage
VEBO
10
Vdc
IC
10
Adc
PT
1.0
15
W
Tj , Tstg
-65 to +200
°C
RθJC
RθJA
10
175
°C/W
Parameters / Test Conditions
Collector Current
Total Power Dissipation
(1)
@ TA = +25°C
@ TC = +25°C (2)
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Case
Junction- to Ambient
1)
2)
TO-5
2N4150, 2N5237, 2N5238
Derate linearly @ 5.7mW/°C for TA > +25°C
Derate linearly @ 100mW/°C for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
V(BR)CEO
70
120
170
Collector-Emitter Cutoff Current
VBE = 0.5Vdc, VCE = 60Vdc
VBE = 0.5Vdc, VCE = 110Vdc
VBE = 0.5Vdc, VCE = 160Vdc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
ICEX
Collector-Emitter Cutoff Current
VCE = 60Vdc
VCE = 110Vdc
VCE = 160Vdc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
ICEO
10
10
10
µAdc
IEBO
10
0.1
µAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 0.1mAdc
Emitter-Base Cutoff Current
VEB = 7.0Vdc
VEB = 5.0Vdc
T4-LDS-0014 Rev. 4 (082192)
Max.
Unit
Vdc
10
10
10
µAdc
TO-39
(TO-205AD)
2N4150S, 2N5237S, 2N5238S
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
Collector-Base Cutoff Current
VCB = 100Vdc
VCB = 150Vdc
VCB = 200Vdc
VCB = 80Vdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0Adc, VCE = 5.0Vdc
IC = 5.0Adc, VCE = 5.0Vdc
IC = 10Adc, VCE = 5.0Vdc
Collector-Emitter Saturation Voltage
IC = 5.0Adc, IB = 0.5Adc
IC = 10Adc, IB = 1.0Adc
Base-Emitter Saturation Voltage
IC = 5.0Adc, IB = 0.5Adc
IC = 10Adc, IB = 1.0Adc
Symbol
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
All Types
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
All Types
All Types
Min.
10
10
10
0.1
ICBO
hFE
Max.
50
50
50
40
10
Unit
µAdc
200
225
225
120
-
VCE(sat)
0.6
2.5
Vdc
VBE(sat)
1.5
25
Vdc
Unit
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.2Adc, VCE = 10Vdc, f = 10MHz
Forward Current Transfer Ratio
IC = 50mAdc, VCE = 5.0V, f = 1.0kHz
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Symbol
Min.
Max.
|hfe|
1.5
7.5
hfe
40
40
40
160
160
250
Cobo
350
pF
Max.
50
500
1.5
500
Unit
ns
ns
µs
ns
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 20Vdc, VBB = 5.0Vdc
IC = 5.0Adc, IB1 = 0.5Adc
VCC = 20Vdc, VBB = 5.0Vdc
IC = 5.0Adc, IB1 = -IB2 = -0.5Adc
Symbol
td
tr
ts
tf
Min.
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, t = 1.0s
Test 1
VCE = 40Vdc, IC = 0.22Adc
Test 2
VCE = 70Vdc, IC = 90mAdc
Test 3
VCE = 120Vdc, IC = 15mAdc
2N5237, 2N5237S
VCE = 170Vdc, IC = 3.5mAdc
2N5238, 2N5238S
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
T4-LDS-0014 Rev. 4 (082192)
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