MMSZ2V4ET1 Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. http://onsemi.com Specification Features • • • • • • • 500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 2.4 V to 56 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power − 225 W (8 X 20 ms) Pb−Free Packages are Available 1 Cathode 2 Anode 2 1 Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: SOD−123 CASE 425 STYLE 1 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 MARKING DIAGRAM ÂÂ ÂÂ ÂÂ MAXIMUM RATINGS Rating Symbol Max Unit Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C Ppk 225 W Total Power Dissipation on FR−5 Board, (Note 2) @ TL = 75°C Derated above 75°C PD 500 6.7 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 340 °C/W Thermal Resistance, Junction−to−Lead (Note 3) RqJL 150 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range xxx M G G xxx = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 11 2. FR−5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint 3. Thermal Resistance measurement obtained via infrared Scan Method Package Shipping † MMSZxxxET1 SOD−123 (Pb−Free) 3000/Tape & Reel MMSZxxxET3 SOD−123 (Pb−Free) 10,000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 5 1 Publication Order Number: MMSZ2V4ET1/D MMSZ2V4ET1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol I IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ VR IR VF IZT Zener Voltage Regulator http://onsemi.com 2 V MMSZ2V4ET1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) VZ1 (V) (Notes 4 and 5) ZZT1 (Note 6) VZ2 (V) (Notes 4 and 5) @ IZT1 = 5 mA ZZT2 (Note 6) Max Reverse Leakage Current @ IZT2 = 1 mA IR @ VR Device Device Marking Min Nom Max W Min Max W mA V MMSZ2V4ET1, G CL1 2.28 2.4 2.52 100 1.7 2.1 600 50 1 MMSZ2V7ET1, G CL2 2.57 2.7 2.84 100 1.9 2.4 600 20 1 MMSZ3V0ET1 CL3 2.85 3.0 3.15 95 2.1 2.7 600 10 1 MMSZ3V3ET1, G CL4 3.14 3.3 3.47 95 2.3 2.9 600 5 1 MMSZ3V6ET1, G CL5 3.42 3.6 3.78 90 2.7 3.3 600 5 1 MMSZ3V9ET1, G CL6 3.71 3.9 4.10 90 2.9 3.5 600 3 1 MMSZ4V3ET1 CL7 4.09 4.3 4.52 90 3.3 4.0 600 3 1 MMSZ4V7ET1 CL8 4.47 4.7 4.94 80 3.7 4.7 500 3 2 MMSZ5V1ET1, G CL9 4.85 5.1 5.36 60 4.2 5.3 480 2 2 MMSZ5V6ET1 CM1 5.32 5.6 5.88 40 4.8 6.0 400 1 2 MMSZ6V2ET1 CM2 5.89 6.2 6.51 10 5.6 6.6 150 3 4 MMSZ6V8ET1 CM3 6.46 6.8 7.14 15 6.3 7.2 80 2 4 MMSZ7V5ET1 CM4 7.13 7.5 7.88 15 6.9 7.9 80 1 5 MMSZ8V2ET1 CM5 7.79 8.2 8.61 15 7.6 8.7 80 0.7 5 MMSZ9V1ET1 CM6 8.65 9.1 9.56 15 8.4 9.6 100 0.5 6 MMSZ10ET1, G CM7 9.50 10 10.50 20 9.3 10.6 150 0.2 7 MMSZ11ET1 CM8 10.45 11 11.55 20 10.2 11.6 150 0.1 8 MMSZ12ET1, G CM9 11.40 12 12.60 25 11.2 12.7 150 0.1 8 MMSZ13ET1 CN1 12.35 13 13.65 30 12.3 14.0 170 0.1 8 MMSZ15ET1, G CN2 14.25 15 15.75 30 13.7 15.5 200 0.05 10.5 MMSZ16ET1, G CN3 15.20 16 16.80 40 15.2 17.0 200 0.05 11.2 MMSZ18ET1, G CN4 17.10 18 18.90 45 16.7 19.0 225 0.05 12.6 MMSZ20ET1, G CN5 19.00 20 21.00 55 18.7 21.1 225 0.05 14 MMSZ22ET1, G CN6 20.90 22 23.10 55 20.7 23.2 250 0.05 15.4 MMSZ24ET1 CN7 22.80 24 25.20 70 22.7 25.5 250 0.05 16.8 4. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage. 5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms. 6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. * The “G” suffix indicates Pb−Free package available. http://onsemi.com 3 MMSZ2V4ET1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) VZ1 (V) (Notes 7 and 8) ZZT1 (Note 9) @ IZT1 = 2 mA Device Marking Min Nom Max MMSZ27ET1, G CN8 25.65 27 MMSZ30ET1 CN9 28.50 MMSZ33ET1 CP1 MMSZ36ET1 VZ2 (V) (Notes 7 and 8) ZZT2 (Note 9) Max Reverse Leakage Current @ IZT2 = 0.1 mA @ IZT2 = 0.5 mA IR @ VR W Min Max W mA V 28.35 80 25 28.9 300 0.05 18.9 30 31.50 80 27.8 32 300 0.05 21 31.35 33 34.65 80 30.8 35 325 0.05 23.1 CP2 34.20 36 37.80 90 33.8 38 350 0.05 25.2 MMSZ39ET1 CP3 37.05 39 40.95 130 36.7 41 350 0.05 27.3 MMSZ43ET1, G CP4 40.85 43 45.15 150 39.7 46 375 0.05 30.1 MMSZ47ET1 CP5 44.65 47 49.35 170 43.7 50 375 0.05 32.9 MMSZ51ET1 CP6 48.45 51 53.55 180 47.6 54 400 0.05 35.7 MMSZ56ET1 CP7 53.20 56 58.80 200 51.5 60 425 0.05 39.2 Device 7. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage. 8. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms. 9. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. * The “G” suffix indicates Pb−Free package available. http://onsemi.com 4 MMSZ2V4ET1 Series 8 100 7 θ VZ , TEMPERATURE COEFFICIENT (mV/°C) θ VZ , TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES FOR MMSZ2V4T1 SERIES 6 5 4 10 VZ @ IZT 3 2 1 0 −1 −2 1−3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 TYPICAL TC VALUES FOR MMSZ2V4T1 SERIES VZ @ IZT 12 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) Ppk, PEAK SURGE POWER (WATTS) 1000 P D, POWER DISSIPATION (WATTS) 1.2 1.0 PD versus TL 0.8 0.6 100 PD versus TA 0.4 0.2 0 0 25 50 75 100 T, TEMPERATURE (°C) RECTANGULAR WAVEFORM, TA = 25°C 125 10 1 150 0.1 Figure 3. Steady State Power Derating 1000 1000 IZ = 1 mA TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE (Ω ) 10 100 PW, PULSE WIDTH (ms) Figure 4. Maximum Nonrepetitive Surge Power 1000 100 75 V (MMSZ5267BT1) 91 V (MMSZ5270BT1) 100 5 mA 20 mA 10 1 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 10 150°C 1 0.4 Figure 5. Effect of Zener Voltage on Zener Impedance 0.5 25°C 0°C 75°C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 6. Typical Forward Voltage http://onsemi.com 5 1.1 1.2 MMSZ2V4ET1 Series TYPICAL CHARACTERISTICS 1000 TA = 25°C 0 V BIAS 1 V BIAS C, CAPACITANCE (pF) I R , LEAKAGE CURRENT (μA) 1000 100 BIAS AT 50% OF VZ NOM 1 10 1 +150°C 0.1 0.01 10 1 100 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 0.001 + 25°C 0.0001 −55°C 0.00001 0 10 Figure 7. Typical Capacitance 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) Figure 8. Typical Leakage Current 100 100 I Z , ZENER CURRENT (mA) TA = 25°C 10 1 10 1 0.1 0.1 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 10 0.01 12 10 100 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 ms tr 90 30 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 90 Figure 10. Zener Voltage versus Zener Current (12 V to 91 V) Figure 9. Zener Voltage versus Zener Current (VZ Up to 12 V) % OF PEAK PULSE CURRENT I Z , ZENER CURRENT (mA) TA = 25°C 0.01 80 40 60 t, TIME (ms) Figure 11. 8 × 20 ms Pulse Waveform http://onsemi.com 6 80 90 MMSZ2V4ET1 Series PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE E D A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A1 ÂÂÂÂ ÂÂÂÂ 1 HE DIM A A1 b c D E HE L E L 2 MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 −−− −−− 0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 −−− −−− 0.25 MIN 0.037 0.000 0.020 −−− 0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 −−− 0.063 0.106 0.145 −−− MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 −−− STYLE 1: PIN 1. CATHODE 2. ANODE C b SOLDERING FOOTPRINT* ÉÉ ÉÉ ÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉ ÉÉ ÉÉ SCALE 10:1 1.22 0.048 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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