IXYS IXFX27N80Q Hiperfet power mosfets q-class Datasheet

HiPerFETTM
Power MOSFETs
VDSS
ID25
IXFK 27N80Q
IXFX 27N80Q
= 800 V
=
27 A
Ω
= 320 mΩ
Q-CLASS
RDS(on)
Single MOSFET Die
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,
High dV/dt, Low trr
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
800
800
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
27
108
27
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
2.5
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
Maximum Ratings
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.063 in.) from case for 10 s
Md
Mounting torque
Weight
500
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
TO-264
0.4/6 Nm/lb.in.
PLUS 247
TO-264
6
10
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1mA
800
VGS(th)
VDS = VGS, ID = 4mA
2.0
IGSS
VGS = ±20 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
© 2002 IXYS All rights reserved
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
4.5 V
±100 nA
TJ = 125°C
100 µA
2 mA
320 mΩ
PLUS 247TM (IXFX)
G
(TAB)
D
TO-264 AA (IXFK)
G
D
G = Gate
S = Source
(TAB)
S
D = Drain
TAB = Drain
Features
z
IXYS advanced low Qg process
z
Low gate charge and capacitances
- easier to drive
- faster switching
z
International standard packages
z
Low RDS (on)
z
Rated for unclamped Inductive load
switching (UIS) rated
z
Molding epoxies meet UL 94 V-0
flammability classification
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
z
Temperature and lighting controls
Advantages
PLUS 247TM package for clip or spring
mounting
z
Space savings
z
High power density
z
DS98722A (12/02)
IXFK 27N80Q
IXFX 27N80Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25
Note 1
20
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
27
S
7600
pF
750
pF
Crss
120
pF
td(on)
20
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
28
ns
td(off)
RG = 1 Ω (External),
50
ns
13
ns
170
nC
47
nC
65
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.26
RthCK
0.15
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
IF = IS,-di/dt = 100 A/µs, VR = 100 V
27
A
108
A
1.5
V
250
ns
1.3
µC
8
A
IRM
Note:
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
trr
QRM
K/W
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PLUS 247TM Outline
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
Dim.
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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