MBRS260T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guard−Ring for Over−Voltage Protection Low Forward Voltage Drop Pb−Free Package is Available SMB CASE 403A PLASTIC Mechanical Characteristics • • • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 95 mg (Approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ESD Ratings: Machine Model = C Human Body Model = 3B MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 60 V IO 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 60 A Storage Temperature Range Tstg −55 to +150 °C Operating Junction Temperature TJ −55 to +125 °C dv/dt 10,000 V/ms Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 95°C) Voltage Rate of Change (Rated VR, TJ = 25°C) MARKING DIAGRAM AYWW B26G G B26 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MBRS260T3 MBRS260T3G Package Shipping† SMB 2500/Tape & Reel SMB (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2010 May, 2010 − Rev. 5 1 Publication Order Number: MBRS260T3/D MBRS260T3 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RqJL RqJA 24 80 °C/W Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) ELECTRICAL CHARACTERISTICS vF Maximum Instantaneous Forward Voltage (Note 3) (iF = 1.0 A) (iF = 2.0 A) IR Maximum Instantaneous Reverse Current (Note 3) (VR = 60 V) TJ = 25°C TJ = 125°C 0.51 0.63 0.475 0.55 TJ = 25°C TJ = 125°C 0.2 20 V mA 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 75°C 125°C 25°C 1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 25°C 1 0.1 0.8 75°C 125°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E−02 100 IR, REVERSE CURRENT (AMPS) 125°C 25°C f = 1 MHz C, CAPACITANCE (pF) 1.0E−03 75°C 1.0E−04 1.0E−05 25°C 1.0E−06 1.0E−07 0 10 20 30 40 50 60 10 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Typical Capacitance http://onsemi.com 2 50 60 RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED) RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED) 3.5 PFO, AVERAGE POWER DISSIPATION (W) IF, AVERAGE FORWARD CURRENT (A) MBRS260T3 dc 3 2.5 2 SQUARE WAVE 1.5 1 0.5 0 60 70 80 90 100 110 120 130 2 1.8 1.6 dc 1.4 1.2 1 SQUARE WAVE 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 2.5 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating − Junction to Lead Figure 6. Forward Power Dissipation 3 1.0E+00 50% 20% 1.0E−01 10% 5.0% 1.0E−02 2.0% 1.0% 1.0E−03 1.0E−04 1.0E+00 1.0E−01 Rtjl(t) = Rtjl*r(t) 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 t, TIME (s) Figure 7. Thermal Response − Junction to Case 50% 20% 10% 5.0% 1.0E−02 2.0% 1.0E−03 1.0% 1.0E−04 0.00001 Rtjl(t) = Rtjl*r(t) 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 8. Thermal Response − Junction to Ambient http://onsemi.com 3 MBRS260T3 PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE G HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.13 2.45 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.084 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.096 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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