NGTB75N65FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com 75 A, 650 V VCEsat = 1.70 V Eon = 0.61 mJ Features • • • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Improved Gate Control Lowers Switching Losses Separate Emitter Drive Pin TO−247−4L for Minimal Eon Losses Optimized for High Speed Switching These are Pb−Free Devices C G E1 Typical Applications E • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Neutral Point Clamp Topology ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 650 V Collector current @ TC = 25°C @ TC = 100°C IC Diode Forward Current @ TC = 25°C @ TC = 100°C IF MARKING DIAGRAM A 200 75 IFM 200 A Pulsed collector current, Tpulse limited by TJmax ICM 200 A Gate−emitter voltage VGE $20 V V $30 Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C W 536 268 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. May, 2016 − Rev. 0 TO−247 CASE 340AR 4 LEAD E E1 G A 200 75 Diode Pulsed Current TPULSE Limited by TJ Max © Semiconductor Components Industries, LLC, 2016 C 1 75N65FL2 AYWWG 75N65FL2 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping NGTB75N65FL2WAG TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB75N65FL2WA/D NGTB75N65FL2WAG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.28 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.62 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 650 − − V VGE = 15 V, IC = 75 A VGE = 15 V, IC = 75 A, TJ = 175°C VCEsat 1.50 − 1.70 2.30 2.00 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 650 V VGE = 0 V, VCE = 650 V, TJ = 175°C ICES − − − 7.0 0.3 − mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 7200 − pF Coes − 300 − Cres − 200 − Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 75 A, VGE = 15 V Gate to collector charge Qg − 310 − Qge − 60 − Qgc − 160 − td(on) − 23 − nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time tr − 50 − td(off) − 157 − tf − 55 − Eon − 0.61 − Eoff − 1.2 − Total switching loss Ets − 1.81 − Turn−on delay time td(on) − 28 − tr − 50 − td(off) − 172 − tf − 90 − Eon − 0.85 − Turn−off switching loss Eoff − 1.8 − Total switching loss Ets − 2.65 − VF 1.50 − 2.30 2.50 2.90 − Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 75 A Rg = 10 W VGE = 15 V Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 175°C VCC = 400 V, IC = 75 A Rg = 10 W VGE = 15 V ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 75 A VGE = 0 V, IF = 75 A, TJ = 175°C TJ = 25°C IF = 75 A, VR = 200 V diF/dt = 200 A/ms TJ = 175°C IF = 75 A, VR = 200 V diF/dt = 200 A/ms V trr − 90 − ns Qrr − 0.40 − mC Irrm − 7.0 − A trr − 173 − ns Qrr − 1.47 − mC Irrm − 13 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB75N65FL2WAG TYPICAL CHARACTERISTICS 200 VGE = 20 V − 15 V 180 13 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 200 160 140 TJ = 25°C 120 11 V 100 80 10 V 60 9V 40 7V 20 8V 0 1 2 3 4 5 6 140 TJ = 150°C 120 100 11 V 80 10 V 60 9V 40 7V 8V 20 8 7 0 4 5 6 200 IC, COLLECTOR CURRENT (A) TJ = −55°C 11 V 120 100 80 10 V 60 40 9V 20 7 V and 8 V 0 1 2 3 4 5 6 7 VGE = 20 V − 15 V 180 160 13 V 140 TJ = 175°C 120 11 V 100 80 10 V 60 9V 40 7V 8V 20 0 0 8 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Output Characteristics VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) 200 180 160 140 120 100 80 60 40 TJ = 175°C 20 TJ = 25°C 0 2 4 6 8 10 12 14 8 7 Figure 2. Output Characteristics 140 0 3 Figure 1. Output Characteristics 160 0 2 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V − 13 V 180 1 VCE, COLLECTOR−EMITTER VOLTAGE (V) 200 IC, COLLECTOR CURRENT (A) 13 V 160 0 0 IC, COLLECTOR CURRENT (A) VGE = 20 V − 15 V 180 16 2.4 2.2 IC = 75 A 2.0 IC = 50 A 1.8 1.6 1.4 IC = 25 A 1.2 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ www.onsemi.com 3 8 NGTB75N65FL2WAG TYPICAL CHARACTERISTICS 100 100K Cies 10K 1K Coes Cres 100 TJ = 25°C 90 IF, FORWARD CURRENT (A) CAPACITANCE (pF) TJ = 25°C TJ = 175°C 80 70 60 50 40 30 20 10 0 10 10 30 20 40 50 60 70 80 90 0 100 1.0 1.5 2.0 2.5 3.0 3.5 VF, FORWARD VOLTAGE (V) Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics 16 1.8 14 1.6 12 10 8 6 VCE = 480 V VGE = 15 V IC = 75 A 4 2 VCE = 400 V VGE = 15 V IC = 75 A Rg = 10 W 1.4 4.0 Eoff 1.2 1.0 0.8 Eon 0.6 0 0.4 0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 140 160 180 200 QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature 1000 6 SWITCHING LOSS (mJ) SWITCHING TIME (ns) 0.5 VCE, COLLECTOR−EMITTER VOLTAGE (V) SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 0 td(off) 100 tf tr td(on) 10 VCE = 400 V VGE = 15 V IC = 75 A Rg = 10 W 1 0 20 40 VCE = 400 V VGE = 15 V TJ = 175°C Rg = 10 W 5 Eoff 4 3 Eon 2 1 0 60 80 100 120 140 160 180 200 10 30 50 70 90 110 130 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC www.onsemi.com 4 150 170 NGTB75N65FL2WAG TYPICAL CHARACTERISTICS 12 td(off) tf 100 tr td(on) 10 VCE = 400 V VGE = 15 V TJ = 175°C Rg = 10 W 1 10 30 6 4 0 50 70 90 110 130 150 170 0 10 20 30 40 50 60 IC, COLLECTOR CURRENT (A) RG, GATE RESISTOR (W) Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG 70 3.0 SWITCHING LOSS (mJ) tf 100 tr VCE = 400 V VGE = 15 V TJ = 175°C IC = 75 A td(on) 10 VGE = 15 V TJ = 175°C IC = 75 A Rg = 10 W 2.5 Eoff 2.0 Eon 1.5 1.0 0.5 0 0 10 20 30 40 50 60 150 200 70 250 300 350 400 450 500 550 600 RG, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE 1000 VGE = 15 V TJ = 175°C IC = 75 A Rg = 10 W IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) Eoff 2 td(off) SWITCHING TIME (ns) Eon 8 1000 1000 VCE = 400 V VGE = 15 V TJ = 175°C IC = 75 A 10 SWITCHING LOSS (mJ) SWITCHING TIME (ns) 1000 td(off) tf 100 tr td(on) 10 100 50 ms 10 100 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 1 ms dc operation 0.1 150 200 250 300 350 400 450 500 550 600 1 10 100 1K VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area www.onsemi.com 5 10K NGTB75N65FL2WAG TYPICAL CHARACTERISTICS 150 trr, REVERSE RECOVERY TIME (ns) IC, COLLECTOR CURRENT (A) 1000 100 10 VGE = 15 V, TC = 175°C 1 130 TJ = 175°C, IF = 75 A 110 90 TJ = 25°C, IF = 75 A 70 50 1 10 100 1K 100 300 500 700 900 1100 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt Irm, REVERSE RECOVERY CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) 3.0 VR = 400 V 2.5 2.0 TJ = 175°C, IF = 75 A 1.5 TJ = 25°C, IF = 75 A 1.0 0.5 0 100 300 500 700 900 1300 1100 VR = 400 V TJ = 175°C, IF = 75 A 40 30 TJ = 25°C, IF = 75 A 20 10 0 100 300 500 700 900 1100 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt 3.00 2.75 2.50 IF = 75 A 2.25 IF = 50 A 2.00 1.75 IF = 25 A 1.50 1.25 1.00 −75 −50 −25 0 25 75 100 125 150 175 200 50 TJ, JUNCTION TEMPERATURE (°C) Figure 23. VF vs. TJ www.onsemi.com 6 1300 50 diF/dt, DIODE CURRENT SLOPE (A/ms) VF, FORWARD VOLTAGE (V) Qrr, REVERSE RECOVERY CHARGE (mC) VR = 400 V 1300 NGTB75N65FL2WAG TYPICAL CHARACTERISTICS 225 Ramp, TC = 110°C 200 Square, TC = 110°C 175 Ipk (A) 150 Ramp, TC = 80°C 125 Square, TC = 80°C 100 75 50 25 0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 24. Collector Current vs. Switching Frequency R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.28 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% Junction R1 R2 Rn C1 C2 Cn 0.001 0.000001 0.00001 Ri (°C/W) Ci (J/W) 0.0301 0.0033 0.0184 0.0172 0.0255 0.0392 0.0536 0.0590 0.1129 0.0886 0.0409 0.7735 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 Case 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 25. IGBT Transient Thermal Impedance R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.62 50% Duty Cycle 20% 0.1 10% 5% 2% Junction R1 R2 Rn C1 C2 Cn Case 0.01 Single Pulse Ri (°C/W) Ci (J/W) 0.000125 0.000951 0.002753 0.003765 0.006647 0.009699 0.051480 0.152673 0.234748 0.654533 0.007994 0.010512 0.011485 0.026558 0.047571 0.103104 0.061427 0.065499 0.134709 0.152781 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.001 0.000001 0.00001 0.0001 0.001 PULSE TIME (sec) 0.01 Figure 26. Diode Transient Thermal Impedance www.onsemi.com 7 0.1 1 NGTB75N65FL2WAG Figure 27. Test Circuit for Switching Characteristics Figure 28. Definition of Turn On Waveform www.onsemi.com 8 NGTB75N65FL2WAG Figure 29. Definition of Turn Off Waveform www.onsemi.com 9 NGTB75N65FL2WAG PACKAGE DIMENSIONS TO−247 4−LEAD CASE 340AR ISSUE O NOTE 3 A P E B 0.635 M B A SEATING PLANE A M E1 NOTE 7 Q S E2 D D1 NOTE 3 NOTE 6 1 2 3 4 L1 DIM A A1 b b2 c D D1 E E1 E2 e L L1 P P1 Q S NOTE 4 L 4X b2 2X c e 4X e b 0.25 A1 NOTE 5 M B A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMEN SIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 4. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 5. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. 6. NOTCHES ARE REQUIRED BUT THEIR SHAPE IS OPTIONAL. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 3.5° TO P1 7. DIAMETER THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 4.20. M MILLIMETERS MIN MAX 4.83 5.21 2.29 2.54 1.10 1.30 1.30 1.50 0.50 0.70 20.80 21.10 16.25 17.65 15.75 16.13 13.06 13.46 4.32 4.83 2.54 BSC 19.90 20.30 4.00 4.40 3.50 3.70 7.00 7.40 5.59 6.20 6.15 BSC ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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