AO4462 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4462 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard product AO4462 is Pb-free (meets ROHS & Sony 259 specifications). AO4462L is a Green Product ordering option. AO4462 and AO4462L are electrically identical. VDS (V) = 30V (V GS = 10V) ID = 11A RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V) D S S S G D D D D G SOIC-8 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. W 2 TJ, TSTG t ≤ 10s Steady-State Steady-State A 3.1 -55 to 150 Symbol A V 40 PD TA=70°C A ±20 9 ID IDM B Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Units V 11 TA=70°C TA=25°C Power Dissipation Maximum 30 RθJA RθJL Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W AO4462 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Conditions Min ID=250µA, VGS=0V 30 VDS=24V, VGS=0V Zero Gate Voltage Drain Current TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, ID=10A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=11A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, ID=11A VGS=10V, VDS=15V, RL=1.35Ω, RGEN=3Ω Units V 1 5 VGS(th) VGS=10V, ID=11A Max 36 0.003 IGSS RDS(ON) Typ µA 100 nA 1.85 3 V 13.5 16 18.9 23.6 21 26 mΩ 1 V 4.3 A 1040 1250 pF 180 220 pF 110 140 pF 0.7 1.4 Ω 19.8 24 nC 9.8 12 nC A 25 0.75 mΩ S 2.5 nC 3.5 nC 4.5 6.5 3.9 5.5 ns ns 17.4 25 ns 3.2 5 ns trr Body Diode Reverse Recovery Time IF=11A, dI/dt=100A/µs 17.5 21 Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=100A/µs 9.3 12 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev0: Apr. 2006 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4462 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 10V 35 4.5V 30 25 12 3.5V 20 ID(A) ID (A) VDS=5V 16 4V 125°C 8 15 10 25°C VGS=3V 4 5 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 800 140 80 0.5 RDS(ON) (mΩ) Normalized On-Resistance 28 VGS=4.5V 22 19 16 VGS=10V 13 10 3.5 4 1.4 VGS=10V ID=11A 15 7 1.2 220 140 VGS=4.5V 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 45 1.0E+00 40 ID=11A 35 1.0E-01 IS (A) RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics 1.6 25 2.5 30 125°C 1.0E-02 125°C 25°C AS CRITICAL THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES 25 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25°C 1.0E-04 FUNCTIONS 15 AND RELIABILITY WITHOUT NOTICE 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4462 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=11A 1250 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 250 0 0 4 8 12 16 Crss 0 20 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 100µs Power (W) ID (Amps) 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C DC 1 10 100 20 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 15 7 30 0 0.001 VDS (Volts) 10 TJ(Max)=150°C TA=25°C 10 10s 0.1 0.1 30 220 140 40 10µs 1ms 10.0 ZθJA Normalized Transient Thermal Resistance 800 140 80 0.5 50 RDS(ON) limited 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS NOT ASSUME ANY LIABILITY ARISING D 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOSPDOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000