AOSMD AO4462 N-channel enhancement mode field effect transistor Datasheet

AO4462
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4462 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
product AO4462 is Pb-free (meets ROHS & Sony
259 specifications). AO4462L is a Green Product
ordering option. AO4462 and AO4462L are
electrically identical.
VDS (V) = 30V
(V GS = 10V)
ID = 11A
RDS(ON) < 16mΩ (VGS = 10V)
RDS(ON) < 26mΩ (VGS = 4.5V)
D
S
S
S
G
D
D
D
D
G
SOIC-8
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current A
Pulsed Drain Current
TA=25°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
W
2
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
3.1
-55 to 150
Symbol
A
V
40
PD
TA=70°C
A
±20
9
ID
IDM
B
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
Units
V
11
TA=70°C
TA=25°C
Power Dissipation
Maximum
30
RθJA
RθJL
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
AO4462
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Conditions
Min
ID=250µA, VGS=0V
30
VDS=24V, VGS=0V
Zero Gate Voltage Drain Current
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=10A
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=11A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, ID=11A
VGS=10V, VDS=15V, RL=1.35Ω,
RGEN=3Ω
Units
V
1
5
VGS(th)
VGS=10V, ID=11A
Max
36
0.003
IGSS
RDS(ON)
Typ
µA
100
nA
1.85
3
V
13.5
16
18.9
23.6
21
26
mΩ
1
V
4.3
A
1040
1250
pF
180
220
pF
110
140
pF
0.7
1.4
Ω
19.8
24
nC
9.8
12
nC
A
25
0.75
mΩ
S
2.5
nC
3.5
nC
4.5
6.5
3.9
5.5
ns
ns
17.4
25
ns
3.2
5
ns
trr
Body Diode Reverse Recovery Time
IF=11A, dI/dt=100A/µs
17.5
21
Qrr
Body Diode Reverse Recovery Charge IF=11A, dI/dt=100A/µs
9.3
12
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev0: Apr. 2006
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4462
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
20
10V
35
4.5V
30
25
12
3.5V
20
ID(A)
ID (A)
VDS=5V
16
4V
125°C
8
15
10
25°C
VGS=3V
4
5
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Fig 1: On-Region Characteristics
800
140
80
0.5
RDS(ON) (mΩ)
Normalized On-Resistance
28
VGS=4.5V
22
19
16
VGS=10V
13
10
3.5
4
1.4
VGS=10V
ID=11A
15
7
1.2
220
140
VGS=4.5V
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
50
1.0E+01
45
1.0E+00
40
ID=11A
35
1.0E-01
IS (A)
RDS(ON) (mΩ)
3
VGS(Volts)
Figure 2: Transfer Characteristics
1.6
25
2.5
30
125°C
1.0E-02
125°C
25°C AS CRITICAL
THIS PRODUCT HAS BEEN DESIGNED AND
QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
25
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C
1.0E-04
FUNCTIONS
15 AND RELIABILITY WITHOUT NOTICE
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4462
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=15V
ID=11A
1250
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
1000
750
500
Coss
250
0
0
4
8
12
16
Crss
0
20
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
100µs
Power (W)
ID (Amps)
10ms
0.1s
1.0
1s
TJ(Max)=150°C
TA=25°C
DC
1
10
100
20
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
15
7
30
0
0.001
VDS (Volts)
10
TJ(Max)=150°C
TA=25°C
10
10s
0.1
0.1
30
220
140
40
10µs
1ms
10.0
ZθJA Normalized Transient
Thermal Resistance
800
140
80
0.5
50
RDS(ON)
limited
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
NOT ASSUME ANY LIABILITY ARISING
D
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOSPDOES
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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