AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1000V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE(sat)=3.0V@IC=30A ▼ Industry Standard TO-3P Package C G G C ▼ RoHS Compliant TO-3P E E Absolute Maximum Ratings Parameter Symbol Rating Units VCES Collector-Emitter Voltage 1000 V VGE Gate-Emitter Voltage ±30 V IC@TC=25℃ Continuous Collector Current 60 A IC@TC=100℃ Continuous Collector Current 30 A ICM Pulsed Collector Current 1 120 A PD@TC=25℃ Maximum Power Dissipation 208 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ TL Maximum Lead Temp. for Soldering Purposes 300 ℃ , 1/8" from case for 5 seconds . Notes: 1.Repetitive rating : Pulse width limited by max . junction temperature . Thermal Data Value Units Rthj-c Thermal Resistance Junction-Case 0.6 ℃/W Rthj-a Thermal Resistance Junction-Ambient 40 ℃/W Symbol Parameter Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVCES Parameter Collect-to-Emitter Breakdown Voltage IGES Gate-to-Emitter Leakage Current ICES Collector-Emitter Leakage Current VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=30A VGE=15V, IC=60A Min. 1000 Typ. - Max. - VGE=±30V, VCE=0V - - ±500 nA VCE=1000V, VGE=0V - - 1 mA - 3 3.6 V - 3.8 - V Test Conditions VGE=0V, IC=250uA Units V VGE(th) Gate Threshold Voltage VCE=VGE, IC=1mA 3 4.4 7 V Qg Total Gate Charge IC=30A - 55 88 nC Qge Gate-Emitter Charge VCC=500V - 12 - nC Qgc Gate-Collector Charge - 27 - nC td(on) Turn-on Delay Time - 30 - ns tr Rise Time - 40 - ns td(off) Turn-off Delay Time - 105 - ns tf Fall Time VGE=15V VCC=500V, Ic=30A, VGE=15V, RG=5Ω, Inductive Load - 290 440 ns Eon Turn-On Switching Loss - 1.2 - mJ Eoff Turn-Off Switching Loss - 1.7 - mJ Cies Input Capacitance VGE=0V - 1320 2110 pF Coes Output Capacitance VCE=30V - 105 - pF Cres Reverse Transfer Capacitance f=1.0MHz - 9 - pF Data and specifications subject to change without notice 200828071-1/3 AP30G100W 160 100 T C =150 C 80 IC , Collector Current (A) IC , Collector Current (A) 20V 18V 15V 12V o 20V 18V 15V T C =25 o C 120 12V 80 V GE =10V 40 60 V GE =10V 40 20 0 0 0 3 6 9 0 12 V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics 6 9 12 Fig 2. Typical Output Characteristics 160 6 V GE = 15 V VCE(sat) ,Saturation Voltage(V) V GE =15V 140 IC , Collector Current(A) 3 V CE , Collector-Emitter Voltage (V) 120 T C =25 ℃ 100 T C =150 ℃ 80 60 40 5 I C = 60 A 4 I C =30A 3 2 20 0 1 0 2 4 6 8 10 12 0 80 120 160 Junction Temperature ( o C) V CE , Collector-Emitter Voltage (V) Fig 3. Typical Saturation Voltage Characteristics Fig 4. Typical Collector- Emitter Voltage v.s. Junction Temperature 1.4 f=1.0MHz 10000 Capacitance (pF) Normalized VGE(th) (V) 40 1.1 C ies C oes 100 0.8 C res 1 0.5 -50 0 50 100 Junction Temperature ( o C ) Fig 5. Gate Threshold Voltage 150 1 10 100 V CE , Collector-Emitter Voltage (V) Fig 6. Typical Capacitance Characterisitics v.s. Junction Temperature 2/3 AP30G100W 1 1000 Normalized Thermal Response (Rthjc) IC, Peak Collector Current(A) V GE =15V T C =125 o C 100 10 Safe Operating Area 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 10 100 1000 10000 0.00001 0.0001 0.001 V CE , Collector-Emitter Voltage(V) 0.01 0.1 1 t , Pulse Width (s) Fig 7. Turn-off SOA Fig 8. Effective Transient Thermal Impedance 20 20 o TC=150 C I C = 60 A 30 A 15 A 15 VCE , Collector-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) o T C =25 C 10 5 0 I C = 60 A 30 A 15 A 15 10 5 0 0 4 8 12 16 20 0 V GE , Gate-Emitter Voltage(V) Fig 9. Saturation Voltage vs. VGE 8 12 16 20 Fig 10. Saturation Voltage vs. VGE 250 VGE , Gate -Emitter Voltage (V) 20 200 Power Dissipation (W) 4 V GE , Gate-Emitter Voltage(V) 150 100 50 I C = 3 0A V CC =200V V CC =300V V CC =500V 16 12 8 4 0 0 0 50 100 150 200 0 20 40 60 Junction Temperature ( ℃ ) Q G , Gate Charge (nC) Fig11. Power Dissipation vs. Junction Temperature Fig 12. Gate Charge Characterisitics 80 3/3 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-3P E A Millimeters SYMBOLS φ c1 D D1 b1 b2 MIN NOM MAX A 4.50 4.80 5.10 b b1 b2 c c1 0.90 1.00 1.30 1.80 2.50 3.20 1.30 -- 2.30 0.40 0.60 0.90 1.40 -- 2.20 D 19.70 20.00 20.30 D1 14.70 15.00 15.30 E 15.30 -- 16.10 e 4.45 5.45 6.45 L 17.50 -- 20.50 φ 3.00 3.20 3.40 L c 1.All Dimensions Are in Millimeters. b 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-3P Part Number Package 30G100W YWWSSS LOGO Date Code (YWWSSS) Y ：Last Digit Of The Year WW：Week SSS ：Sequence