CS3524A Voltage Mode PWM Control Circuit with 200 mA Output Drivers The CS3524A PWM control circuit retains the same versatile architecture of the industry standard CS3524 (SG3524) while adding substantial improvements. The CS3524 is pin−compatible with “non−A” versions, and in most applications can be directly interchanged. The CS3524A, however, eliminates many of the design restrictions which had previously required additional external circuitry. The CS3524A includes a precision 5.0 V reference trimmed to ±1% accuracy (eliminating the need for potentiometer adjustments), an error amplifier with an output voltage swing extending to 5.0 V, and a current sense amplifier useful in either the ground or power supply output lines. The uncommitted 60 V, 200 mA NPN output pair greatly enhances the output drive capability. The CS3524A features an undervoltage lockout circuit which disables all internal circuitry (except the reference) until the input voltage has risen to 8.0 V. This holds standby current low until turn−on, and greatly simplifies the design of low power, off−line supplies. The turn−on circuit has approximately 600 mV of hysteresis for jitter free activation. Other improvements include a PWM latch that insures freedom from multiple pulsing within a period, even in noisy environments; logic to eliminate double pulsing on a single output, a 200 ns external shutdown capability, and automatic thermal protection from excessive chip temperature. The oscillator circuit is usable to 500 kHz and is easier to synchronize with an external clock pulse. Features Precision Reference Internally Trimmed to ±1% Current Limit Undervoltage Lockout Start−Up Supply Current < 4.0 mA Output to 200 mA 60 V Output Capability Wide Common−Mode Input Range for Error and Current Limit Amplifiers • PWM Latch Insures Single Pulse per Period • Double Pulse Suppression • 200 ns Shutdown • Guaranteed Frequency • Thermal Shutdown • • • • • • • © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 4 1 http://onsemi.com MARKING DIAGRAMS 16 16 CS3524A AWLYYWW 1 DIP−16 N SUFFIX CASE 648 1 16 16 CS3524A 1 SO−16L DW SUFFIX CASE 751G A WL, L YY, Y WW, W AWLYYWW 1 = Assembly Location = Wafer Lot = Year = Work Week PIN CONNECTIONS EA− 1 VREF EA+ VIN SYNC EB VOUTB VOUTA ISENSE+ ISENSE− RT EA CT GND SHUTDOWN COMP ORDERING INFORMATION Device Package Shipping CS3524AGN16 DIP−16 25 Units/Rail CS3524AGDW16 SO−16L 46 Units/Rail CS3524AGDWR16 SO−16L 1000 Tape & Reel Publication Order Number: CS3524A/D CS3524A 5 V Reference Regulator VIN UV Sense SYNC RT Power to Internal Circuitry CLOCK OSC VREF VOUTA Flip T Flop EA CT RAMP COMP VIN EA− + COMP − S S 200 mV ISENSE+ ISENSE− VOUTB PWM Latch EB − EA + EA+ R 1 kΩ VIN SHUTDOWN 10 kΩ GND CL Figure 1. Block Diagram ABSOLUTE MAXIMUM RATINGS* Rating Value Unit Supply Voltage (VIN) 40 V Collector Supply Voltage (VCC) 60 V Output Current (Each Output) 200 mA Reference Output Current 50 mA Oscillator Charging Current 5.0 mA Power Dissipation at TA = 25°C 1000 mW Power Dissipation at TJ = +25°C Derate for Case Temperature above +25°C 2000 16 mW mW/°C −65 to +150 °C 260 peak 230 peak °C °C Storage Temperature Range Lead Temperature Soldering Wave Solder (through hole styles only) Note 1 Reflow (SMD styles only) Note 2 1. 10 seconds max. 2. 60 seconds max above 183°C *The maximum package power dissipation must be observed. http://onsemi.com 2 CS3524A ELECTRICAL CHARACTERISTICS (0°C ≤ TA ≤ +70°C, VIN = VCC = 20 V; unless otherwise specified.) Characteristic Test Conditions Min Typ Max Unit 8.0 − 40 V 5.5 7.5 8.5 V Turn−On Characteristics Input Voltage Operating Range after Turn−On Turn−On Threshold − Turn−On Current VIN Turn−On − 100 mV − 2.5 4.0 mA Operating Current VIN = 8.0 to 40 V − 5.0 10 mA − 0.6 − V 4.9 5.0 5.2 V Turn−On Hysteresis (Note 3) − Reference Section Output Voltage TA = 25°C Line Regulation VIN = 10 to 40 V − 10 30 mV Load Regulation IL = 0 to 20 mA − 20 50 mA Temperature Stability (Note 3) Over Operating Range − 20 50 mV Short Circuit Current VREF = 0, TA = 25°C − 80 100 mA Output Noise Voltage (Note 3) 10 Hz ≤ f ≤ 10 kHz, TA = 25°C − 40 − μVRMS Long Term Stability (Note 3) TA = 125°C, 1000 Hrs. − 20 50 mV Oscillator Section RT = 2700 W, CT = 0.01 mF; unless otherwise specified Initial Accuracy TA = 25°C 39 43 47 kHz Temperature Stability (Note 3) Over Operating Temperature Range − 1.0 2.0 % Minimum Frequency RT = 150 kΩ, CT = 0.1 μF − − 120 Hz Maximum Frequency RT = 2.0 kΩ, CT = 470 pF 500 − − kHz Output Amplitude (Note 3) TA = 25°C − 3.5 − V Output Pulse Width (Note 3) TA = 25°C − 0.5 − μs Ramp Peak − 3.3 3.5 3.7 V Ramp Valley − 0.7 0.9 1.0 V Error Amplifier Section VCM = 2.5 V; unless otherwise specified Input Offset Voltage − − 2.0 10 mV Input Bias Current − − 1.0 10 μA Input Offset Current − − 0.5 1.0 μA Common Mode Rejection Ratio VCM = 1.5 to 5.5 V 60 75 − dB Power Supply Rejection Ratio VIN = 10 to 40 V 50 60 − dB Output Swing Minimum Total Range 0.5 − 5.0 V Open Loop Voltage Gain ΔVOUT = 1.0 to 4.0 V, RL ≥ 10 MΩ 60 80 − dB Gain−Bandwidth (Note 3) TA = 25°C, AV = 0 dB − 3.0 − MHz Current Limit Amplifier VSENSE = VO; unless otherwise specified Input Offset Voltage TA = 25°C, EA Set for Max. Output 180 200 220 mV Input Offset Voltage Over Operating Temperature Range 170 − 230 mV − −1.0 −10 μA Input Bias Current − Common Mode Rejection Ratio VSENSE = 0 to 15 V 50 60 − dB Power Supply Rejection Ratio VIN = 10 to 40 V 50 60 − dB 3. These parameters are guaranteed by design but not 100% tested in production. http://onsemi.com 3 CS3524A ELECTRICAL CHARACTERISTICS (continued) (0°C ≤ TA ≤ +70°C, VIN = VCC = 20 V; unless otherwise specified.) Characteristic Test Conditions Current Limit Amplifier (continued) Min Typ Max Unit VSENSE = VO; unless otherwise specified Output Swing Minimum Total Range 0.5 − 5.0 V Open Loop Voltage Gain ΔVOUT = 1.0 to 4.0 V, RL ≥ 10 MΩ 70 80 − dB Delay Time (Note 4) ΔVIN = 300 mV − 300 − ns Collector Emitter Voltage IC = 100 μA 60 80 − V Collector Leakage Current VCE = 50 V − 0.1 20 μA Saturation IC = 20 mA IC = 200 mA − − 0.2 1.0 0.4 2.2 V V Emitter Output Voltage IE = 50 mA 17 18 − V Rise Time (Note 4) TA = 25°C, R = 2.0 kΩ − 200 − ns Fall Time (Note 4) TA = 25°C, R = 2.0 kΩ − 100 − ns Comparator Delay (Note 4) TA = 25°C, VCOMP to VOUT − 300 − ns Shutdown Delay (Note 4) TA = 25°C, VSHUT to VOUT − 200 − ns Shutdown Threshold TA = 25°C, RC = 2.0 kΩ 0.5 0.7 1.0 V − 165 − °C Output Section (Each Output) Thermal Shutdown (Note 4) − 4. These parameters are guaranteed by design but not 100% tested in production. TYPICAL PERFORMANCE CHARACTERISTICS 50 RF = ∞ VIN = 20 V TA = 25°C RF = 1 M Ω 60 Duty−Cycle (One Output) − % Open Voltage Gain (dB) 80 RF = 300 kΩ RF = 100 kΩ 40 20 0 RF = 30 kΩ RF is impedance to ground. Values below 30 kΩ will begin to limit the maximum duty−cycle. 100 1k 10 k 100 k 40 30 CT = 10 μF 20 CT = 1 μF 10 0 1M VIN = 20 V RT = 2700 Ω TA = 25°C 0 1 2 3 4 Input Voltage VIN Frequency (Hz) Figure 2. Error Amplifier Voltage Gain vs. Frequency Over RF Figure 3. Duty Cycle vs. Input Voltage http://onsemi.com 4 5 CS3524A 10 8 7 TA = 25°C 6 TA = 125°C Output (V) 20 TA = −55°C 5 4 3 2 Note: Outputs off. RT = ∞ 1 0 Output at VOA or VOB 15 10 5 VIN = 20 V RL = 2 kΩ TA = 25°C 0 Input (V) Quiescent Current (mA) 9 10 0 20 30 5 4 3 2 1 0 Input at VOB Note: Minimum input pulse width to latch is 200 ns. 0 50 40 Figure 4. Quiescent Supply Current vs. Supply Voltage Over Temperature 1M 10 5.0 Output Dead Time (μs) Oscillator Frequency (Hz) 2 100 k 3 4 10 k 5 1. CT = 1.0 nF 1 k 2. CT = 3.0 nF 3. CT = 10 nF 4. CT = 30 nF 5. CT = 100 nF 100 1 2 10 50 20 2.0 1.0 0.5 0.1 1 100 Note: Dead time = osc output pulse width plus output delay 2 5 0 1 Output (V) Input (V) Output (V) Input (V) VIN = 20 V, TA = 25°C EA+ = VREF ISENSE− = GND 0 2 100 VIN = 20 V RL = 2.0 kΩ TA = 25°C 15 10 5 Output at VOA or VOB 0 0.1 50 20 Overdrive 5% 10% 20% 50% Input at ISENSE+ 20 Figure 7. Output Dead Time vs. Timing Capacitor Value Output at COMP 0.2 10 Timing Capacitor, CT (nF) Timing Resistor, RT (kΩ) Figure 6. Oscillator Frequency vs. Timing Components Resistor Over Timing Capacitance 6 5 4 3 2 1 0 3 VIN = 20 V RT = 2700 Ω TA = 25°C 0.2 f [ 1.15 RTCT 5 2 Figure 5. Shutdown Delay from PWM Comparator VIN = 20 V TA = 25°C 1 1 Delay Time (μs) Supply Voltage VIN (V) 3 1.0 Input at Shutdown 0.5 0 Note: Minimum input pulse width to latch is 200 ns. 4 0 Delay Time (μs) 1 2 3 Delay Time (μs) Figure 8. Current Limit Amplifier Delay Figure 9. Turn−Off Delay from Shutdown http://onsemi.com 5 CS3524A 5 VCE Sat (V) 4 3 TA = 125°C 2 TA = 25°C TA = −55°C 1 0 0 50 100 200 150 250 Output Collector Current (mA) Figure 10. Output Saturation Voltage vs. Output Current Over Temperature VCC 2 kΩ 1W IS VIN VOUTB EA GND ISENSE− COMP EA− EA+ CT RT ISENSE+ CS3524A SHUTDOWN VOUTA SYNC VREF 2 kΩ 1W EB 100 kΩ 100 kΩ SHUTDOWN 2 kΩ 0.1 RT CT 10 kΩ 0.1 2 kΩ 10 kΩ 1 kΩ Figure 11. Open Loop Test Circuit 2. The effect of the shutdown cannot be seen at the compensation terminal, but must be observed at the outputs. Note: The CS3524A should be able to be tested in any 3524 test circuit with two possible exceptions: 1. The higher gain−bandwidth of the current limit amplifier in the CS3524A may cause oscillations in an uncompensated 3524 test circuit. http://onsemi.com 6 CS3524A PACKAGE DIMENSIONS DIP−16 N SUFFIX CASE 648−08 ISSUE R NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. −A− 16 9 1 8 B F C DIM A B C D F G H J K L M S L S −T− H SEATING PLANE K G D M J 16 PL 0.25 (0.010) M T A M INCHES MIN MAX 0.740 0.770 0.250 0.270 0.145 0.175 0.015 0.021 0.040 0.70 0.100 BSC 0.050 BSC 0.008 0.015 0.110 0.130 0.295 0.305 0_ 10 _ 0.020 0.040 MILLIMETERS MIN MAX 18.80 19.55 6.35 6.85 3.69 4.44 0.39 0.53 1.02 1.77 2.54 BSC 1.27 BSC 0.21 0.38 2.80 3.30 7.50 7.74 0_ 10 _ 0.51 1.01 SO−16L DW SUFFIX CASE 751G−03 ISSUE B A D 9 1 8 NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INLCUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. h X 45 _ E M 0.25 16X M 14X e T A S B DIM A A1 B C D E e H h L q S L A 0.25 B B A1 8X H B M 16 q SEATING PLANE C T MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 10.15 10.45 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.50 0.90 0_ 7_ PACKAGE THERMAL DATA Parameter DIP−16 SO−16L Unit RΘJC Typical 42 23 °C/W RΘJA Typical 80 105 °C/W http://onsemi.com 7 CS3524A ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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