A Product Line of Diodes Incorporated FMMT489 30V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 30V Case: SOT-23 IC = 1A high Continuous Collector Current Case material: Molded Plastic. “Green” Molding Compound. ICM Up to 4A Peak Pulse Current UL Flammability Rating 94V-0 Excellent hFE Characteristics Up To 4A Moisture Sensitivity: Level 1 per J-STD-020 RSAT = 175mΩ @ 1A for a Low Equivalent On-Resistance Low Saturation Voltage < 300mV @ 1A Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 e3 500mW Power Dissipation Weight: 0.008 grams (Approximate) Complementary PNP Type: FMMT589 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability C SOT23 E C B B E Top View Top View Pin-Out Device Symbol Ordering Information (Note 4) Notes: Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel FMMT489TA 489 7 8 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 489 = Product Type Marking Code FMMT489 Document number: DS33090 Rev. 4 - 2 1 of 7 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated FMMT489 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Collector-Base Voltage Characteristic VCBO 50 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 7 V IC 1 A Continuous Collector Current Peak Pulse Current Base Current ICM 4 A IB 200 mA Symbol Value Unit PD RθJA RθJL TJ, TSTG 500 250 197 -55 to +150 mW °C/W °C/W °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Lead (Note 6) Operating and Storage Temperature Range ESD Ratings (Note 7) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value ≥ 4,000 ≥ 400 Unit V V JEDEC Class 3A C 5. For a device mounted with the collector lead on 15mm X 15mm 1oz weight copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Thermal resistance from junction to solder-point (at the end of the collector lead). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FMMT489 Document number: DS33090 Rev. 4 - 2 2 of 7 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated FMMT489 Thermal Characteristics and Derating Information 0.6 VCE(sat) Max Power Dissipation (W) -IC Collector Current (A) 1 Limit 100m DC 1s 100ms 10m 10ms 1ms 15 x 15mm FR4 1oz Copper 1m 1 100µs 10 100 -VCE Collector-Emitter Voltage (V) 15 x 15mm FR4 1oz Copper 0.5 0.4 0.3 0.2 0.1 0.0 0 20 D=0.5 D=0.2 Single Pulse 40 0 100µ D=0.05 D=0.1 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 15 x 15mm FR4 1oz Copper 120 80 15 x 15mm FR4 1oz Copper 100 10 1 0.1 100µ Transient Thermal Impedance FMMT489 Document number: DS33090 Rev. 4 - 2 80 100 120 140 160 Derating Curve 200 160 60 Temperature (°C) Safe Operating Area 240 40 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 3 of 7 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated FMMT489 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Symbol Min Collector-Base Breakdown Voltage Characteristic BVCBO 50 Max Unit V Test Condition Collector-Emitter Breakdown Voltage (Note 8) BVCEO 30 V IC = 10 mA Emitter-Base Breakdown Voltage BVEBO 7 V IE = 100 µA IC = 100 µA Collector-Base Cutoff Current ICBO 100 nA VCB = 30V Emitter-Base Cutoff Current IEBO 100 nA VEB = 6V Collector-Emitter Cutoff Current ICES 100 nA Static Forward Current Transfer Ratio (Note 8) Collector-Emitter Saturation Voltage (Note 8) 100 100 60 20 hFE VCES= 30V IC = 1mA, VCE = 2V IC = 1A, VCE = 2V IC = 2A, VCE = 2V IC = 4A, VCE = 2V 300 - IC = 1A, IB = 100mA IC = 2A, IB = 200mA VCE(sat) 300 600 mV mV Base-Emitter Turn-On Voltage (Note 8) VBE(on) 1.0 V IC = 1A, VCE = 2V Base-Emitter Saturation Voltage (Note 8) VBE(sat) 1.1 V IC = 1A, IB = 100mA Cobo 10 pF Output Capacitance Transition Frequency Note: fT 150 MHz VCB = 10V, f = 1MHz VCE = 10V, IC = 50mA, f = 100MHz 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% FMMT489 Document number: DS33090 Rev. 4 - 2 4 of 7 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated FMMT489 Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) FMMT489 Document number: DS33090 Rev. 4 - 2 5 of 7 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated FMMT489 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° All Dimensions in mm A B C H K M K1 D F J L G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X FMMT489 Document number: DS33090 Rev. 4 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E E 6 of 7 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated FMMT489 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2013, Diodes Incorporated www.diodes.com FMMT489 Document number: DS33090 Rev. 4 - 2 7 of 7 www.diodes.com May 2013 © Diodes Incorporated