LED DOT MATRIX BL-M23A881XXX n Ø Ø Ø Ø Ø Ø n Features: 60.20mm (2.3”) F 5.0 dot matrix LED display, RGB COLOR Low current operation. Excellent character appearance. Easy mounting on P.C. Boards or sockets. I.C. Compatible. ROHS Compliance. Electrical-optical characteristics: (Ta=25℃ ) Part No Row Cathode Row Anode Emitted Column Anode Column Cathode Color BL-M23C881RGB- BL-M23D881RGB- XX XX BL-M23C881DUG BL-M23D881DUG UB-XX UB-XX ·-XX: Surface / Lens color： 0 Number Ref Surface Color White Epoxy Color Water clear n (Test Condition: IF=20mA) Chip VF Unit:V λ P Material Typ Max (nm) Iv TYP.(mcd ) Super Red GaAlAs/GaAs,DH 660 1.85 2.20 280 Green GaP/GaP 570 2.20 2.50 250 Ultra Blue InGaN 470 2.70 4.20 150 Ultra Red GaAlAs/GaAs,DDH 660 1.85 2.20 310 Ultra Green AlGaInP 574 2.20 2.50 380 Ultra Blue InGaN 470 2.70 4.20 270 1 2 3 4 5 Black White diffused Gray Red Diffused Red Green Diffused Green Yellow Diffused Absolute maximum ratings (Ta=25℃ ) Parameter S G B D UG UB Unit Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature TOPR 25 60 5 30 65 5 30 120 5 25 60 5 30 75 5 30 120 5 mA mW V 150 150 100 150 150 100 mA Storage Temperature TSTG Lead Soldering Temperature -40 to +80 ℃ -40 to +85 ℃ Max.260±5℃ for 3 sec Max. (1.6mm from the base of the epoxy bulb) ℃ T SOL APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 3 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] LED DOT MATRIX BL-M23A881XXX ■ Package configuration & Internal circuit diagram Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is ±0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice. APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 2 of 3 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] LED DOT MATRIX BL-M23A881XXX ■ Typical electrical-optical characteristics curves: (A) 1.0 (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10) 0.5 0 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH(λ p ) (1) - GaAsP/GaAs 655nm/Red (9) - GaAlAs 880nm (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (6) - GaAlAs/GaAs 660nm/Super Red (D) - InGaAl/SiC 525nm/Ultra Green (8) - GaAsP/GaP 610nm/Super Red 8 64 5 2 3 40 30 20 10 0 1.2 1.6 2.0 2.4 2.6 3.0 4.0 3.0 2.0 1.0 0 20 60 80 40 30 20 1 6 2,4,8,A 3 5 10 0 100 20 0.2 4 3 2 -20 -10 0 10 20 30 40 50 60 80 100 4 3 2 70 1 AMBIENT TEMPERATURE Ta(℃ ) 60 30KHz 3KHz 300Hz 100KHz 10KHz 1KHz 100Hz 10 9 8 7 6 5 Ipeak M AX. IDC MAX. 0.5 40 AMBIENT TEMPERATURE Ta(℃) FORWARD CURRENT VS. AMBIENT TEMPERATURE 3KHz 300KHz 1KHz 100KHz F-REFRESH RATE 10 10KHz 9 8 7 6 5 1 5 4 2 3 0.1 -30 40 FORWARD CURRENT (mA) RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT Ipeak MAX. IDC MAX. REL ATIVE LUMIN OU S IN TENSITY 1 5 B FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE 3 2 50 1 FORWARD CURRENT(mA) FORWARD CURRENT(mA) RELATIVE LUMINOUS INTENSITY 1 50 1 10 100 1000 tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K) 10,000 1 1 10 100 1000 tp-PULSE DURATION uS (5) NOTE:25℃ free air temperature unless otherwise specified APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 3 of 3 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] 10,000