PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET NE434S01 FEATURES MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • HIGH ASSOCIATED GAIN: 15.5 dB TYP at 4 GHz • GATE WIDTH: 280 µm • TAPE & REEL PACKAGING OPTION AVAILABLE • LOW COST PLASTIC PACKAGE DESCRIPTION The NE434S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. 24 Maximum Stable Gain, MSG (dB) Maximum Available Gain, MAG (dB) Forward Insertion Gain, |S21S|2 (dB) • VERY LOW NOISE FIGURE: 0.35 dB TYP at 4 GHz VDS = 2 V ID = 10 mA 20 MSG. 16 |S21S|2 MAG. 12 8 4 1 2 4 6 8 10 SYMBOLS VDS CHARACTERISTIC (TA = 25°C) UNITS MIN TYP MAX Drain to Source Voltage V 2 2.5 15 20 ID Drain Current mA PIN Input Power dBM 0 (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS 20 30 Frequency, f (GHz) RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS 14 PARAMETERS AND CONDITIONS NE434S01 S01 UNITS MIN TYP MAX IGSO Gate to Source Leak Current, VGS = -3.0 V µA 0.5 10 IDSS Saturated Drain Current, VDS = 2.0 V, VGS = 0 V mA 20 80 150 V -0.2 -0.9 -2.5 70 VGS(off) Gate to Source Cutoff Voltage, VDS = 2.0 V, ID = 100 µA, gm Transconductance, VDS = 2.0 V, ID = 14 mA mS NF1 Noise Figure, VDS = 2.0 V, ID = 15 mA, f = 4 GHz dB GA1 Associated Gain, VDS = 2.0 V, ID = 15 mA, f = 4 GHz dB 85 0.35 13.0 0.45 15.5 Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. California Eastern Laboratories NE434S01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS RATINGS V 4.0 FREQ. NFMIN GA -3.0 (GHz) (dB) (dB) MAG ANG Rn/50 2 0.32 16.5 0.77 15 0.19 4 0.35 15.5 0.58 43 0.18 6 0.40 14.2 0.43 82 0.13 8 0.46 13.1 0.32 127 0.08 10 0.56 12.0 0.27 175 0.07 12 0.67 10.9 0.27 -139 0.10 14 0.80 9.9 0.34 -100 0.17 16 0.94 8.9 0.48 -70 0.29 18 1.10 8.0 0.69 -56 0.46 Drain to Source Voltage VDS VGS Gate to Source Voltage V IDS Drain Current mA IDSS TCH Channel Temperature °C 125 °C -65 to +125 mW 300 TSTG Storage Temperature PT TYPICAL NOISE PARAMETERS (TA = 25°C) VDS = 2 V, IDS = 15 mA UNITS Total Power Dissipation Note: 1. Operation in excess of any one of these conditions may result in permanent damage. TYPICAL PERFORMANCE CURVES ΓOPT (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS = 2 V Drain Current, IDS (mA) Total Power Dissipation, PT (mW) 500 400 300 200 100 0 100 150 200 250 20 VGS = 0 V 100 80 -0.2 V 60 -0.4 V 40 -0.6 V 20 1 2 3 4 Drain to Source Voltage, VDS (V) -2.0 -1.0 Gate to Source Voltage, VGS (V) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Drain Current, IDS (mA) 40 0 50 Ambient Temperature, TA (°C) 0 60 5 0 NE434S01 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) +90° 1.0 2.0 0.5 +135° +45° 18 GHz 18 GHz S21 2 GHz 18 GHz ∞ 0 +180° 0 18 GHz S22 2 GHz S11 2 GHz Coordinates in Ohms Frequency in GHz VDS = 2 V, IDS = 15 mA -2.0 -0.5 S12 2 GHz -135° -45° -1.0 -90° VDS = 2 V, IDS = 15 mA FREQUENCY (GHz) MAG S11 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 .998 .927 .860 .829 .802 .716 .659 .601 .592 .550 .514 .488 .464 .463 .468 .472 .472 .476 .476 .488 .518 .552 .593 .635 .661 .688 .707 .719 .730 .752 .771 .803 .817 S21 S12 S22 ANG MAG ANG MAG ANG MAG -41.7 -47.5 -61.3 -69.9 -79.2 -87.5 -93.9 -99.7 -108.5 -118.5 -130.2 -144.5 -158.9 -171.7 176.6 166.4 156.2 147.0 137.8 127.7 118.1 109.6 101.9 95.2 90.1 86.1 82.2 79.7 76.1 71.3 65.5 60.4 55.7 7.162 6.856 6.603 6.305 6.033 5.687 5.415 5.184 5.050 4.912 4.774 4.600 4.401 4.187 3.997 3.812 3.628 3.477 3.351 3.251 3.150 3.036 2.875 2.714 2.546 2.418 2.327 2.240 2.168 2.100 2.021 1.930 1.814 140.1 133.6 122.0 114.4 106.8 98.5 91.6 84.7 77.6 70.5 63.0 55.4 47.9 41.0 34.1 27.7 21.5 15.6 9.6 3.5 -2.9 -9.7 -16.4 -22.7 -28.1 -32.6 -37.0 -41.8 -46.8 -52.7 -58.4 -65.1 -70.5 .042 .050 .057 .064 .071 .075 .081 .085 .091 .096 .102 .107 .109 .113 .114 .118 .119 .122 .124 .125 .128 .130 .131 .129 .126 .124 .127 .126 .129 .131 .130 .134 .128 68.4 65.9 57.5 54.1 49.6 45.8 41.1 38.9 35.2 30.8 27.3 22.0 18.6 14.9 11.5 7.7 4.7 1.0 -2.5 -5.8 -9.2 -12.9 -16.7 -21.2 -22.5 -24.9 -27.4 -28.8 -31.6 -33.2 -38.5 -42.2 -44.3 .415 .479 .423 .429 .426 .406 .394 .374 .340 .311 .279 .232 .189 .155 .134 .121 .111 .103 .098 .093 .105 .131 .177 .223 .259 .284 .316 .332 .352 .380 .398 .422 .445 K MAG1 (dB) .10 .23 .39 .42 .45 .60 .69 .78 .79 .84 .87 .91 .96 .98 1.00 1.02 1.06 1.08 1.10 1.12 1.10 1.08 1.07 1.06 1.08 1.08 1.05 1.04 1.01 .98 .96 .89 .91 41.82 26.36 23.09 21.91 20.95 19.00 17.88 16.89 16.47 15.83 15.26 14.68 14.08 13.59 15.01 14.21 13.37 12.86 12.36 12.06 11.98 11.92 11.79 11.70 11.29 11.17 11.30 11.20 11.55 10.74 10.78 11.05 10.92 ANG -27.5 -35.8 -43.0 -47.9 -51.7 -56.2 -59.7 -63.3 -68.1 -73.0 -79.1 -87.5 -97.7 -109.3 -126.9 -142.8 -156.2 -170.1 174.4 157.9 137.6 121.0 107.0 97.8 91.0 87.0 86.0 83.3 81.7 77.4 72.4 66.5 62.9 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE434S01 NE434S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Q1 0.62nH Rdx 3 ohms Rgx 0.72nH 3 ohms CGS_PKG 0.05pF Lsx 0.07nH CDS_PKG 0.06PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Q1 Parameters Q1 Parameter VTO -0.806 RG 0.2 time seconds Units VTOSC 0 RD 1 capacitance farads henries ALPHA 8 RS 1 inductance BETA 0.121 RGMET 0 resistance ohms GAMMA 0.085 KF 0 voltage volts GAMMADC 0.067 AF 1 current amps Q 2.2 TNOM 27 DELTA 0 XTI 3 VBI 0.5 EG 1.43 IS 1e-14 VTOTC 0 N 1 BETATCE 0 RIS 0 FFE 1 RID 0 TAU 7e-12 CDS 0.12e-12 RDB 5000 CBS 1e-9 CGSO 0.42e-12 CGDO 0.04e-12 DELTA1 0.3 DELTA2 0.25 FC 0.5 VBR Infinity MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 1 V to 3 V, ID = 5 mA to 20 mA Date: 6/98 (1) Series IV Libra TOM Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. NE434S01 OUTLINE DIMENSIONS (Units in mm) TYPICAL MOUNT PAD LAYOUT (Units in mm) PACKAGE OUTLINE S01 2.0 ± 0.2 2.4 mm TYP. 2. 0 1 ± 2.0 ± 0.2 0.5 TYP. E 2.4 mm TYP. 2 0. 2 4 3 1. Source 2. Drain 3. Source 4. Gate 1.5 MAX 0.65 TYP. 1.9 ± 0.2 1.6 0.125 ± 0.05 0.4 MAX 4.0 ± 0.2 ORDERING INFORMATION PART NUMBER NE434S01 AVAILABILITY PACKAGE Bulk S01 NE434S01-T1 Tape & reel 1K/reel S01 NE434S01-T1B Tape & reel 4K/reel S01 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE