NEC NE434S01-T1B C band super low noise hj fet Datasheet

PRELIMINARY DATA SHEET
C BAND SUPER LOW NOISE HJ FET
NE434S01
FEATURES
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
• HIGH ASSOCIATED GAIN:
15.5 dB TYP at 4 GHz
• GATE WIDTH: 280 µm
• TAPE & REEL PACKAGING OPTION AVAILABLE
• LOW COST PLASTIC PACKAGE
DESCRIPTION
The NE434S01 is a Hetero-Junction FET that uses the junction
between Si-doped AlGaAs and undoped InGaAs to create very
high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial
systems.
24
Maximum Stable Gain, MSG (dB)
Maximum Available Gain, MAG (dB)
Forward Insertion Gain, |S21S|2 (dB)
• VERY LOW NOISE FIGURE:
0.35 dB TYP at 4 GHz
VDS = 2 V
ID = 10 mA
20
MSG.
16
|S21S|2
MAG.
12
8
4
1
2
4
6
8 10
SYMBOLS
VDS
CHARACTERISTIC
(TA = 25°C)
UNITS MIN TYP MAX
Drain to Source Voltage
V
2
2.5
15
20
ID
Drain Current
mA
PIN
Input Power
dBM
0
(TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
20 30
Frequency, f (GHz)
RECOMMENDED
OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
14
PARAMETERS AND CONDITIONS
NE434S01
S01
UNITS
MIN
TYP
MAX
IGSO
Gate to Source Leak Current, VGS = -3.0 V
µA
0.5
10
IDSS
Saturated Drain Current, VDS = 2.0 V, VGS = 0 V
mA
20
80
150
V
-0.2
-0.9
-2.5
70
VGS(off)
Gate to Source Cutoff Voltage, VDS = 2.0 V, ID = 100 µA,
gm
Transconductance, VDS = 2.0 V, ID = 14 mA
mS
NF1
Noise Figure, VDS = 2.0 V, ID = 15 mA, f = 4 GHz
dB
GA1
Associated Gain, VDS = 2.0 V, ID = 15 mA, f = 4 GHz
dB
85
0.35
13.0
0.45
15.5
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production
line as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories
NE434S01
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
RATINGS
V
4.0
FREQ.
NFMIN
GA
-3.0
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
2
0.32
16.5
0.77
15
0.19
4
0.35
15.5
0.58
43
0.18
6
0.40
14.2
0.43
82
0.13
8
0.46
13.1
0.32
127
0.08
10
0.56
12.0
0.27
175
0.07
12
0.67
10.9
0.27
-139
0.10
14
0.80
9.9
0.34
-100
0.17
16
0.94
8.9
0.48
-70
0.29
18
1.10
8.0
0.69
-56
0.46
Drain to Source Voltage
VDS
VGS
Gate to Source Voltage
V
IDS
Drain Current
mA
IDSS
TCH
Channel Temperature
°C
125
°C
-65 to +125
mW
300
TSTG
Storage Temperature
PT
TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 2 V, IDS = 15 mA
UNITS
Total Power Dissipation
Note:
1. Operation in excess of any one of these conditions may result
in permanent damage.
TYPICAL PERFORMANCE CURVES
ΓOPT
(TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 2 V
Drain Current, IDS (mA)
Total Power Dissipation, PT (mW)
500
400
300
200
100
0
100
150
200
250
20
VGS = 0 V
100
80
-0.2 V
60
-0.4 V
40
-0.6 V
20
1
2
3
4
Drain to Source Voltage, VDS (V)
-2.0
-1.0
Gate to Source Voltage, VGS (V)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain Current, IDS (mA)
40
0
50
Ambient Temperature, TA (°C)
0
60
5
0
NE434S01
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
+90°
1.0
2.0
0.5
+135°
+45°
18 GHz
18 GHz
S21
2 GHz
18 GHz
∞
0
+180°
0
18 GHz
S22
2 GHz
S11
2 GHz
Coordinates in Ohms
Frequency in GHz
VDS = 2 V, IDS = 15 mA
-2.0
-0.5
S12
2 GHz
-135°
-45°
-1.0
-90°
VDS = 2 V, IDS = 15 mA
FREQUENCY
(GHz)
MAG
S11
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
.998
.927
.860
.829
.802
.716
.659
.601
.592
.550
.514
.488
.464
.463
.468
.472
.472
.476
.476
.488
.518
.552
.593
.635
.661
.688
.707
.719
.730
.752
.771
.803
.817
S21
S12
S22
ANG
MAG
ANG
MAG
ANG
MAG
-41.7
-47.5
-61.3
-69.9
-79.2
-87.5
-93.9
-99.7
-108.5
-118.5
-130.2
-144.5
-158.9
-171.7
176.6
166.4
156.2
147.0
137.8
127.7
118.1
109.6
101.9
95.2
90.1
86.1
82.2
79.7
76.1
71.3
65.5
60.4
55.7
7.162
6.856
6.603
6.305
6.033
5.687
5.415
5.184
5.050
4.912
4.774
4.600
4.401
4.187
3.997
3.812
3.628
3.477
3.351
3.251
3.150
3.036
2.875
2.714
2.546
2.418
2.327
2.240
2.168
2.100
2.021
1.930
1.814
140.1
133.6
122.0
114.4
106.8
98.5
91.6
84.7
77.6
70.5
63.0
55.4
47.9
41.0
34.1
27.7
21.5
15.6
9.6
3.5
-2.9
-9.7
-16.4
-22.7
-28.1
-32.6
-37.0
-41.8
-46.8
-52.7
-58.4
-65.1
-70.5
.042
.050
.057
.064
.071
.075
.081
.085
.091
.096
.102
.107
.109
.113
.114
.118
.119
.122
.124
.125
.128
.130
.131
.129
.126
.124
.127
.126
.129
.131
.130
.134
.128
68.4
65.9
57.5
54.1
49.6
45.8
41.1
38.9
35.2
30.8
27.3
22.0
18.6
14.9
11.5
7.7
4.7
1.0
-2.5
-5.8
-9.2
-12.9
-16.7
-21.2
-22.5
-24.9
-27.4
-28.8
-31.6
-33.2
-38.5
-42.2
-44.3
.415
.479
.423
.429
.426
.406
.394
.374
.340
.311
.279
.232
.189
.155
.134
.121
.111
.103
.098
.093
.105
.131
.177
.223
.259
.284
.316
.332
.352
.380
.398
.422
.445
K
MAG1
(dB)
.10
.23
.39
.42
.45
.60
.69
.78
.79
.84
.87
.91
.96
.98
1.00
1.02
1.06
1.08
1.10
1.12
1.10
1.08
1.07
1.06
1.08
1.08
1.05
1.04
1.01
.98
.96
.89
.91
41.82
26.36
23.09
21.91
20.95
19.00
17.88
16.89
16.47
15.83
15.26
14.68
14.08
13.59
15.01
14.21
13.37
12.86
12.36
12.06
11.98
11.92
11.79
11.70
11.29
11.17
11.30
11.20
11.55
10.74
10.78
11.05
10.92
ANG
-27.5
-35.8
-43.0
-47.9
-51.7
-56.2
-59.7
-63.3
-68.1
-73.0
-79.1
-87.5
-97.7
-109.3
-126.9
-142.8
-156.2
-170.1
174.4
157.9
137.6
121.0
107.0
97.8
91.0
87.0
86.0
83.3
81.7
77.4
72.4
66.5
62.9
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE434S01
NE434S01 NONLINEAR MODEL
SCHEMATIC
CGD_PKG
0.001pF
Ldx
DRAIN
Lgx
GATE
Q1
0.62nH
Rdx
3 ohms
Rgx 0.72nH
3 ohms
CGS_PKG
0.05pF
Lsx
0.07nH
CDS_PKG
0.06PF
Rsx
0.06 ohms
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
UNITS
Parameters
Q1
Parameters
Q1
Parameter
VTO
-0.806
RG
0.2
time
seconds
Units
VTOSC
0
RD
1
capacitance
farads
henries
ALPHA
8
RS
1
inductance
BETA
0.121
RGMET
0
resistance
ohms
GAMMA
0.085
KF
0
voltage
volts
GAMMADC
0.067
AF
1
current
amps
Q
2.2
TNOM
27
DELTA
0
XTI
3
VBI
0.5
EG
1.43
IS
1e-14
VTOTC
0
N
1
BETATCE
0
RIS
0
FFE
1
RID
0
TAU
7e-12
CDS
0.12e-12
RDB
5000
CBS
1e-9
CGSO
0.42e-12
CGDO
0.04e-12
DELTA1
0.3
DELTA2
0.25
FC
0.5
VBR
Infinity
MODEL RANGE
Frequency: 0.1 to 18 GHz
Bias:
VDS = 1 V to 3 V, ID = 5 mA to 20 mA
Date:
6/98
(1) Series IV Libra TOM Model
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
NE434S01
OUTLINE DIMENSIONS (Units in mm)
TYPICAL MOUNT PAD LAYOUT (Units in mm)
PACKAGE OUTLINE S01
2.0 ± 0.2
2.4 mm TYP.
2.
0
1
±
2.0 ± 0.2
0.5 TYP.
E
2.4 mm TYP.
2
0.
2
4
3
1. Source
2. Drain
3. Source
4. Gate
1.5 MAX
0.65 TYP.
1.9 ± 0.2
1.6
0.125 ± 0.05
0.4 MAX
4.0 ± 0.2
ORDERING INFORMATION
PART NUMBER
NE434S01
AVAILABILITY
PACKAGE
Bulk
S01
NE434S01-T1
Tape & reel 1K/reel
S01
NE434S01-T1B
Tape & reel 4K/reel
S01
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -8/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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