NTE2960 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC–DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Gate–Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21A Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Channel–to–Case, Rth(ch–c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.13°C/W Isolation Voltage, VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V Electrical Characteristics: (Tch = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Drain–Source Breakdown Voltage V(BR)DSS VDS = 0V, ID = 1mA 900 – – V Gate–Source Breakdown Voltage V(BR)GSS VDS = 0V, IG = ±100µA ±30 – – V Gate–Source Leakage IGSS VGS = ±25V, VDS = 0V – – ±10 µA Zero Gate Voltage Drain Current IDSS VDS = 900V, VGS = 0 – – 1.0 mA Gate Threshold Voltage VGS(th) VDS = 10V, ID = 1mA 2.0 3.0 4.0 V Static Drain–Source ON Resistance RDS(on) VGS = 10V, ID = 3A – 1.54 2.00 Ω Drain–Source On–State Voltage VDS(on) VGS = 10V, ID = 3A – 4.62 6.00 V |yfs| VGS = 10V, ID = 3A 4.2 7.0 – S Forward Transfer Admittance Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified) Parameter Symbol Test Conditions Typ Max Unit – 1380 – pF Input Capacitance Ciss Output Capacitance Coss – 140 – pF Reverse Transfer Capacitance Crss – 28 – pF Turn–On Delay Time td(on) – 25 – ns – 28 – ns td(off) – 185 – ns tf – 46 – ns – 1.0 1.5 V Rise Time tr Turn–Off Delay Time Fall Time Diode Forward Voltage VSD VGS = 0V, VDS = 25V, f = 1MHz Min VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω Ω IS = 3A, VGS = 0V .181 (4.6) Max .126 (3.2) Dia Max .405 (10.3) Max .114 (2.9) Isol .252 (6.4) .622 (15.0) Max G D S .118 (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54)