SEMICONDUCTOR TECHNICAL DATA The MC14555B and MC14556B are constructed with complementary MOS (CMOS) enhancement mode devices. Each Decoder/Demultiplexer has two select inputs (A and B), an active low Enable input (E), and four mutually exclusive outputs (Q0, Q1, Q2, Q3). The MC14555B has the selected output go to the “high” state, and the MC14556B has the selected output go to the “low” state. Expanded decoding such as binary–to–hexadecimal (1–of–16), etc., can be achieved by using other MC14555B or MC14556B devices. Applications include code conversion, address decoding, memory selection control, and demultiplexing (using the Enable input as a data input) in digital data transmission systems. • • • • • • L SUFFIX CERAMIC CASE 620 P SUFFIX PLASTIC CASE 648 D SUFFIX SOIC CASE 751B Diode Protection on All Inputs Active High or Active Low Outputs Expandable Supply Voltage Range = 3.0 Vdc to 18 Vdc All Outputs Buffered Capable of Driving Two Low–Power TTL Loads or One Low–Power Schottky TTL Load Over the Rated Temperature Range ORDERING INFORMATION ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MC14XXXBCP MC14XXXBCL MC14XXXBD Plastic Ceramic SOIC TA = – 55° to 125°C for all packages. MAXIMUM RATINGS* (Voltages Referenced to VSS) Symbol Parameter VDD DC Supply Voltage Value Unit TRUTH TABLE – 0.5 to + 18.0 V Vin, Vout Input or Output Voltage (DC or Transient) – 0.5 to VDD + 0.5 V Enable Iin, Iout Input or Output Current (DC or Transient), per Pin ± 10 mA E B A Q3 Q2 Q1 Q0 Q3 Q2 Q1 Q0 PD Power Dissipation, per Package† 500 mW Tstg Storage Temperature – 65 to + 150 _C 0 0 0 0 0 0 1 1 0 1 0 1 0 0 0 1 0 0 1 0 0 1 0 0 1 0 0 0 1 1 1 0 1 1 0 1 1 0 1 1 0 1 1 1 _C 1 X X 0 0 0 0 1 1 1 1 260 TL Lead Temperature (8–Second Soldering) * Maximum Ratings are those values beyond which damage to the device may occur. †Temperature Derating: “P and D/DW” Packages: – 7.0 mW/C From 65_C To 125_C Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C BLOCK DIAGRAM MC14555B 2 A 3 B 1 E 14 A 13 B 15 E MC14556B Q0 Q1 Q2 Q3 4 5 6 7 2 A 3 B 1 E Q0 Q1 Q2 Q3 12 11 10 9 14 A 13 B 15 E Q0 Q1 Q2 Q3 4 5 6 7 Q0 Q1 Q2 Q3 12 11 10 9 Inputs Outputs Select MC14555B MC14556B X = Don’t Care This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS (Vin or Vout) VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. v v VDD = PIN 16 VSS = PIN 8 REV 3 1/94 MOTOROLA Motorola, Inc. 1995 CMOS LOGIC DATA MC14555B MC14556B 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) Characteristic Output Voltage Vin = VDD or 0 Symbol – 55_C 25_C 125_C VDD Vdc Min Max Min Typ # Max Min Max Unit “0” Level VOL 5.0 10 15 — — — 0.05 0.05 0.05 — — — 0 0 0 0.05 0.05 0.05 — — — 0.05 0.05 0.05 Vdc “1” Level VOH 5.0 10 15 4.95 9.95 14.95 — — — 4.95 9.95 14.95 5.0 10 15 — — — 4.95 9.95 14.95 — — — Vdc 5.0 10 15 — — — 1.5 3.0 4.0 — — — 2.25 4.50 6.75 1.5 3.0 4.0 — — — 1.5 3.0 4.0 5.0 10 15 3.5 7.0 11 — — — 3.5 7.0 11 2.75 5.50 8.25 — — — 3.5 7.0 11 — — — 5.0 5.0 10 15 – 3.0 – 0.64 – 1.6 – 4.2 — — — — – 2.4 – 0.51 – 1.3 – 3.4 – 4.2 – 0.88 – 2.25 – 8.8 — — — — – 1.7 – 0.36 – 0.9 – 2.4 — — — — IOL 5.0 10 15 0.64 1.6 4.2 — — — 0.51 1.3 3.4 0.88 2.25 8.8 — — — 0.36 0.9 2.4 — — — mAdc Input Current Iin 15 — ± 0.1 — ± 0.00001 ± 0.1 — ± 1.0 µAdc Input Capacitance (Vin = 0) Cin — — — — 5.0 7.5 — — pF Quiescent Current (Per Package) IDD 5.0 10 15 — — — 5.0 10 20 — — — 0.005 0.010 0.015 5.0 10 20 — — — 150 300 600 µAdc IT 5.0 10 15 Vin = 0 or VDD Input Voltage “0” Level (VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc) VIL “1” Level VIH Vdc Vdc (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc) Output Drive Current (VOH = 2.5 Vdc) (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc) (VOL = 0.4 Vdc) (VOL = 0.5 Vdc) (VOL = 1.5 Vdc) IOH mAdc Source Sink Total Supply Current**† (Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching) IT = (0.85 µA/kHz) f + IDD IT = (1.70 µA/kHz) f + IDD IT = (2.60 µA/kHz) f + IDD µAdc #Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. ** The formulas given are for the typical characteristics only at 25_C. †To calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + (CL – 50) Vfk where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002. PIN ASSIGNMENTS MC14555B MC14555B MC14556B 2 MC14556B EA 1 16 VDD EA 1 16 VDD AA 2 15 EB AA 2 15 EB BA 3 14 AB BA 3 14 AB Q0A 4 13 BB Q0A 4 13 BB Q1A 5 12 Q0B Q1A 5 12 Q0B Q2A 6 11 Q1B Q2A 6 11 Q1B Q3A 7 10 Q2B Q3A 7 10 Q2B VSS 8 9 Q3B VSS 8 9 Q3B MOTOROLA CMOS LOGIC DATA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SWITCHING CHARACTERISTICS* (CL = 50 pF, TA = 25_C) Characteristic Symbol Output Rise and Fall Time tTLH, tTHL = (1.5 ns/pF) CL + 25 ns tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns tTLH, tTHL Propagation Delay Time — A, B to Output tPLH, tPHL = (1.7 ns/pF) CL + 135 ns tPLH, tPHL = (0.66 ns/pF) CL + 62 ns tPLH, tPHL = (0.5 ns/pF) CL + 45 ns tPLH, tPHL Propagation Delay Time — E to Output tPLH, tPHL = (1.7 ns/pF) CL + 115 ns tPLH, tPHL = (0.66 ns/pF) CL + 52 ns tPLH, tPHL = (0.5 ns/pF) CL + 40 ns tPLH, tPHL VDD Min Typ # Max 5.0 10 15 — — — 100 50 40 200 100 80 5.0 10 15 — — — 220 95 70 440 190 140 5.0 10 15 — — — 200 85 65 400 170 130 Unit ns ns ns * The formulas given are for the typical characteristics only at 25_C. #Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. INPUT E LOW 20 ns A INPUTS (50% DUTY CYCLE) INPUT A HIGH, INPUT E LOW 20 ns 20 ns 1 2f 90% 50% 10% VDD 20 ns VSS INPUT B VDD tPHL B INPUTS (50% DUTY CYCLE) VSS OUTPUT Q1 VOL VOH All 8 outputs connect to respective CL loads. f in respect to a system clock. VDD 90% 50% 10% tPLH OUTPUT Q3 MC14556B tTHL tPLH 90% 50% 10% 90% 50% 10% OUTPUT Q3 MC14555B tTLH Figure 1. Dynamic Power Dissipation Signal Waveforms VSS VOH V tTLH OL tPHL VOH VOL tTHL Figure 2. Dynamic Signal Waveforms LOGIC DIAGRAM (1/2 of Dual) * Q0 A * Q1 B * Q2 * Q3 E * Eliminated for MC14555B MOTOROLA CMOS LOGIC DATA MC14555B MC14556B 3 OUTLINE DIMENSIONS L SUFFIX CERAMIC DIP PACKAGE CASE 620–10 ISSUE V –A– 16 9 1 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4. DIMENSION F MAY NARROW TO 0.76 (0.030) WHERE THE LEAD ENTERS THE CERAMIC BODY. –B– C L DIM A B C D E F G H K L M N –T– K N SEATING PLANE M E F J G D 16 PL 0.25 (0.010) 16 PL 0.25 (0.010) M T A T B M S INCHES MIN MAX 0.750 0.785 0.240 0.295 ––– 0.200 0.015 0.020 0.050 BSC 0.055 0.065 0.100 BSC 0.008 0.015 0.125 0.170 0.300 BSC 0_ 15 _ 0.020 0.040 MILLIMETERS MIN MAX 19.05 19.93 6.10 7.49 ––– 5.08 0.39 0.50 1.27 BSC 1.40 1.65 2.54 BSC 0.21 0.38 3.18 4.31 7.62 BSC 0_ 15 _ 0.51 1.01 S P SUFFIX PLASTIC DIP PACKAGE CASE 648–08 ISSUE R NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. –A– 16 9 1 8 B F C L S –T– SEATING PLANE K H G D 16 PL 0.25 (0.010) MC14555B MC14556B 4 J M T A M M DIM A B C D F G H J K L M S INCHES MIN MAX 0.740 0.770 0.250 0.270 0.145 0.175 0.015 0.021 0.040 0.70 0.100 BSC 0.050 BSC 0.008 0.015 0.110 0.130 0.295 0.305 0_ 10 _ 0.020 0.040 MILLIMETERS MIN MAX 18.80 19.55 6.35 6.85 3.69 4.44 0.39 0.53 1.02 1.77 2.54 BSC 1.27 BSC 0.21 0.38 2.80 3.30 7.50 7.74 0_ 10 _ 0.51 1.01 MOTOROLA CMOS LOGIC DATA OUTLINE DIMENSIONS D SUFFIX PLASTIC SOIC PACKAGE CASE 751B–05 ISSUE J –A– 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 –B– 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C –T– SEATING PLANE M D 16 PL 0.25 (0.010) M T B S A S J DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 Motorola reserves the right to make changes without further notice to any products herein. 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How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MOTOROLA CMOS LOGIC DATA ◊ *MC14555B/D* MC14555B MC14556B MC14555B/D 5