NTE2522 (NPN) & NTE2523 (PNP) Silicon Complementary Transistors High Speed Switch Features: D High Current Capacity D High Collector–Emitter Saturation Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO NTE2522 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V NTE2523 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector Emitter Voltage, VCEO NTE2522 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V NTE2523 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current NTE2522 Symbol ICBO NTE2523 Emitter Cutoff Current IEBO DC Current Gain NTE2522 hFE1 Test Conditions Min Typ VCB = 45V, IE = 0 – – 1.0 µA VCB = 3V, IE = 0 – – 1.0 µA VEB = 4V, IC = 0 – – 1.0 µA 140 – 400 100 – 400 40 – – 25 – – – 250 – VCE = 2V, IC = 500mA NTE2523 NTE2522 hFE2 VCE = 2V, IC = 8A NTE2523 Gain–Bandwidth Product fT VCE = 2V, IC = 500mA Max Unit MHz Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Output Capacitance NTE2522 Cob Test Conditions VCB = 10V, f = 1MHz NTE2523 Collector–Emitter Saturation Voltage NTE2522 VCE(sat) IC = 4A, IB = 200mA NTE2523 Base–Emitter Saturation Voltage NTE2522 VBE(sat) IC = 4A, IB = 200mA NTE2523 Collector–Base Breakdown Voltage NTE2522 V(BR)CBO IC = 100µA, IE = 0 NTE2523 Collector–Emitter Breakdown Voltage NTE2522 V(BR)CEO IC = 1mA, RBE = ∞ NTE2523 Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 Turn–On Time ton Storage Time NTE2522 tstg NTE2523 Turn–Off Time NTE2522 VCC = 25V, VBE = 1V, 20IB1 = –20IB2 = IC = 4A, Pulse Width = 20µs, Duty Cucle ≤ 1%, Note 1 toff NTE2523 Note 1. For NTE2523, the polarity is reversed. .256 (6.5) .090 (2.3) .002 (0.5) .197 (5.0) .059 (1.5) .275 (7.0) B C E .295 (7.5) .002(0.5) .090 (2.3) Min Typ Max Unit – 65 – pF – 100 – pF – 0.25 0.7 V – 0.3 0.8 V – 0.95 1.8 V – 0.95 1.3 V 60 – – V 50 – – V 45 – – V 40 – – V 5 – – V – 50 100 ns – 150 270 ns – 120 220 ns – 180 350 ns – 150 300 ns