CMP1617BAx-E CMOS LPRAM Document Title 1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Dec. 22nd, 2003 Preliminary 0.1 Add Direct DPD Modify MRS Entry Modify PASR Current Mar. 15th, 2004 Preliminary 0.2 Change speed from 60nsec to 55nsec Modify ISB1, PASR Current Sep. 21th, 2004 Final 0.3 Modified functional description & MRS update timing Minor Changes Nov. 8th, 2004 Final 0.4 Added G(Pb-Free) and H(Pb-Free & Halogen Free) descriptions Nov. 1st, 2005 Final 0.5 Add AC Parameter (tCP) Jul. 25th, 2006 Final 1 Revision 0.5 Jul. 2006 CMP1617BAx-E CMOS LPRAM 1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM FEATURES • Process Technology : Full CMOS • Three state output and TTL Compatible • Package Type : 48-FBGA-6.00x8.00 mm2 • Separated I/O power(VCCQ) & Core Power(VCC) • Page read/write operation by 16 words • Organization : 1M x 16 • Power Supply Voltage : 2.7~3.3V • Low Power & Page Modes CMP1617BX1 : support the PASR/MRS DPD function CMP1617BX2 : support the Direct DPD function CMP1617BX4 : support the PASR/MRS DPD/PAGE function CMP1617BX5 : support the Direct DPD/PAGE function (CMP1617BA4, CMP1617BA5) • DPD mode by using MRS only (CMP1617BA1, CMP1617BA4) • Direct DPD mode when /ZZ goes low (CMP1617BA2, CMP1617BA5) PRODUCT FAMILY Operating Temperature Product Family Power Dissipation Operating Voltage (V) ICC2 f = 1MHz f = fmax Speed Min. Typ. Max. CMP1617BAx-F60E CMP1617BAx-F70E ICC1 Extended (-25~85’C) 2.7 3.0 3.3 Typ. 60ns 70ns 1.5mA ISB1 (CMOS Standby Current) Max. Typ. Max. Typ. Max. 3mA 15mA 12mA 25mA 50uA 100uA 1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and TA = 25C. 2. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER PIN DESCRIPTION 1 2 3 4 5 6 A /LB /OE A0 A1 A2 /ZZ B I/O9 /UB A3 A4 /CS I/O1 C I/O10 I/O11 A5 A6 I/O2 I/O3 D VSS I/O12 A17 A7 I/O4 VCC E VCCQ I/O13 DNU A16 I/O5 VSS F I/O15 I/O14 A14 A15 I/O6 I/O7 G I/O16 A19 A12 A13 WE I/O8 H A18 A8 A9 A10 A11 NC FUNCTIONAL BLOCK DIAGRAM Clk gen. VCC VSS Row Addresses I/O1~I/O8 Function Name Function /ZZ Low Power Modes VCC Core Power I/O Power Chip Select Input VCCQ Output Enable Input VSS Ground /CS /WE Write Enable Input /UB Upper Byte(I/O9~16) /OE A0~A19 Address Inputs /LB Lower Byte(I/O 1~8) /WE Data Inputs/Outputs No Connection DNU I/O Circuit Column select Column Addresses /CS NC Data cont Memory array Data cont /OE I/O1~I/O16 Row select Data cont I/O9~I/O16 48-FBGA : Top View(Ball Down) Name Precharge circuit. /UB Control Logic /LB Do Not Use /ZZ 2 Revision 0.5 Jul. 2006 CMP1617BAx-E CMOS LPRAM PRODUCT LIST Extended Temperature Products(-25~85’C) Part Name Function CMP1617BAx-F60E CMP1617BAx-F70E 48-FBGA, 60ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V) 48-FBGA, 70ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V) 1. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER FUNCTIONAL DESCRIPTION /CS /ZZ /OE /WE /LB /UB I/O1-8 I/O9-16 Mode Power H H X1) X1) X1) X1) High-Z High-Z Deselected Standby X1) L X1) X1) X1) X1) High-Z High-Z Deselected Direct DPD2) H L X1) X1) X1) X1) High-Z High-Z Deselected Low Power Modes3) X1) H X1) X1) H H High-Z High-Z Deselected Standby H H H L X1) High-Z High-Z Output Disabled Active H H H X1) L High-Z High-Z Output Disabled Active L H Dout High-Z Lower Byte Read Active H L High-Z Dout Upper Byte Read Active L L Dout Dout Word Read Active L H Din High-Z Lower Byte Write Active H L High-Z Din Upper Byte Write Active L L Din Din Word Write Active L L L H H X1) L 1. X means don’t care.(Must be low or high state) 2. In case of CMP1617BA2 & CMP1617BA5 product 3. In case of CMP1617BA1 & CMP1617BA4 product ABSOLUTE MAXIMUM RATINGS1) Item Voltage on any pin relative to Vss Symbol Ratings VIN, VOUT -0.2 to Vcc+0.3V V Vcc -0.2 to 3.6 V Voltage on Vcc supply relative to Vss PD 1.0 W TSTG -65 to 150 ’C TA -25 to 85 ’C Power Dissipation Storage temperature Unit Operating Temperature 1. Str es s e s g r e ate r tha n th o s e l i st e d u n d er “ A bsolute Maxim um Ratings” may cause permanent dam age to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS1) Item Symbol I/O operating voltage (VCCQ ≤ VCC) Ground CMP1617BA Max VCC 2.7 3.3 2.7 3.3 2.7 3.3 V VCCQ 2.7 3.3 2.25 2.75 1.65 1.95 V VSS 0 0 0 0 0 0 V Input high voltage VIH 0.8VCCQ VCC+0.22) 0.8VCCQ VCC+0.22) 0.8VCCQ VCC+0.22) V Input low voltage VIL -0.23) 0.2VCCQ -0.23) 0.2VCCQ -0.23) 0.2VCCQ V Supply voltage Min Max Min Max Unit Min Note : 1.TA=-25 to 85’C, otherwise specified. 2. Overshoot : Vcc+1.0V in case of pulse width≤20ns. 3. Undershoot : -1.0V in case of pulse width≤20ns. 4. Overshoot and undershoot are sampled, not 100% tested. 3 Revision 0.5 Jul. 2006 CMP1617BAx-E CMOS LPRAM CAPACITANCE1) (f=1MHz , TA=25’C) Symbol Test Condition Min Max Input capacitance Item CIN VIN=0V - 8 Unit pF Input/Output capacitance CIO VIO=0V - 8 pF 1. Capacitance is sampled, not 100% tested. DC AND OPERATING CHARACTERISTICS Min Typ Max Unit Input leakage current Item Symbol ILI VIN=VSS to VCC -1 - 1 uA Output leakage current ILO /CS=VIH, /ZZ=VIH, /OE=VIH or /WE=VIL, VIO=VSS to VCC -1 - 1 uA ICC1 Cycle time=1us, 100%duty, IIO=0mA, /CS≤0.2V, /ZZ=VIH, VIN≤0.2V or VIN≥VCC-0.2V - - 3 mA ICC2 Cycle time=Min, IIO=0mA, 100% duty, /CS=VIL, /ZZ=VIH, VIN=VIL or VIH - - 25 mA Output low voltage VOL IOL=0.5mA 0.2VCCQ V Output high voltage VOH IOH=-0.5mA Standby Current(TTL) ISB /CS=VIH, /ZZ=VIH, Other inputs=VIH or VIL - 0.3 mA Standby Current(CMOS) ISB1 /CS≥VCC-0.2V, /ZZ≥VCC-0.2V, Other inputs=0~VCC - - 100 uA ISB0 /ZZ≤0.2V, Other inputs=0~VCC, No refresh(DPD) - - 10 uA ISB0a /ZZ≤0.2V, Other inputs=0~VCC, ¼ refresh area selection - - 55 uA ISB0b /ZZ≤0.2V, Other inputs=0~VCC, ½ refresh area selection - - 70 uA ISB0c /ZZ≤0.2V, Other inputs=0~VCC, All refresh area selection - - 100 uA Average operating current Low Power Modes Test Conditions 0.8VCCQ 4 - V Revision 0.5 Jul. 2006 CMP1617BAx-E CMOS LPRAM AC OPERATING CONDITIONS TEST CONDITIONS(Test Load and Input/Output Reference) 30pf Input pulse level : 0.2 to VCC-0.2V Input rising and falling time : 5ns Input and output reference voltage : 0.5*VCCQ Output load(see right) : CL=30pF+1TTL 1TTL AC CHARACTERISTICS(VCC=2.7V~3.3V, Extended product : TA=-25 to 85’C) Speed Bins Parameter List Read Cycle Time Read Write 60ns tRC 70ns Units Min Max Min Max 60 40k 70 40k ns Address Access Time tAA - 60 - 70 ns Chip Select to Output tCO - 60 - 70 ns Output Enable to Valid Output tOE - 25 - 25 ns /UB, /LB Access Time tBA - 60 - 70 ns Chip Select to Low-Z Output tLZ 10 - 10 - ns /UB, /LB Enable to Low-Z Output tBLZ 10 - 10 - ns Output Enable to Low-Z Output tOLZ 5 - 5 - ns Chip Disable to High- Z Output tHZ 0 5 0 5 ns /UB, /LB Disable to High- Z Output tBHZ 0 5 0 5 ns Output Disable to High- Z Output tOHZ 0 5 0 5 ns Output Hold from Address Change tOH 5 - 5 - ns Write Cycle Time tWC 60 40k 70 40k ns ns Chip Select to End of Write tCW 50 - 60 - Address Set-up Time tAS 0 - 0 - ns Address Valid to End of Write tAW 50 - 60 - ns /UB, /LB Valid to End of Write tBW 50 - 60 - ns Write Pulse Width tWP 50 - 50 - ns Write Recovery Time Write to Output High-Z Page Symbol tWR 0 - 0 - ns tWHZ 0 5 0 5 ns Data to Write Time Overlap tDW 20 - 20 - ns Data Hold from Write Time tDH 0 - 0 - ns End Write to Output Low-Z tOW 5 - 5 - ns Page Mode Cycle Time tPC 25 - 25 - ns Page Mode Address Access Time tPAA - 25 - 25 ns Maximum Cycle Time tMRC - 40k - 40k ns /CS High Pulse Width tCP 10 - 10 - ns 1. /CS High Pulse Width is defined by /CS or (/UB and /LB) because /UB & /LB can make standby mode when /UB=High and /LB=High. 5 Revision 0.5 Jul. 2006 CMP1617BAx-E CMOS LPRAM Power Up Sequence 1. Apply Power 2. Maintain stable power for a minimum of 200us with /CS=VIH Standby Mode State machines Power On /CS=VIH Wait 200us /CS=VIH, /ZZ=VIH Initial State /CS=VIL, /ZZ=VIH /UB or/and /LB=VIL /CS=VIH, /ZZ=VIL Active Mode /CS=VIL /ZZ=VIH /CS=VIH /ZZ=VIL /CS=VIH (or/and /UB=/LB=VIH) /ZZ=VIH /CS=VIH, /ZZ=VIL Standby Mode /CS=VIlL /ZZ=VIH Low Power Modes 1 (16M/8M/4M bits) Low Power Modes 2 (Data Invalid) /CS=VIH, /ZZ=VIL Standby Mode Characteristics Mode Memory Cell Data Standby Current(uA) Wait Time(us) Standby Valid 100 (ISB1) 0 Invalid 10 (ISB0) 200 ¼ valid 55 (ISB0a) 0 ½ valid 70 (ISB0b) 0 valid 100 (ISB0c) 0 Low Power Modes 6 Revision 0.5 Jul. 2006 CMP1617BAx-E READ CYCLE (1) CMOS LPRAM (Address controlled,/CS=/OE=VIL, /ZZ=/WE=VIH, /UB or/and /LB=VIL) tRC Address tOH Data Out READ CYCLE (2) tAA Previous Data Valid Data Valid (/ZZ=/WE=VIH) tRC Address tOH tAA tCO /CS tHZ tBA /UB, /LB tBHZ tOE /OE tOLZ Data Out tOHZ tBLZ tLZ High-Z Data Valid 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. 3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us. PAGE READ CYCLE (/ZZ=/WE=VIH, 16 words access) tMRC tRC tPC tPC tPC tPC tPC tPC tPC A0~A3 tAA A4~A20 tOH tCO /CS tHZ tBA /UB, /LB tBHZ tOE /OE tOLZ tBLZ Data Out High-Z tLZ tPAA tPAA Data Valid Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid tOHZ Data Valid 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. 3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us. 7 Revision 0.5 Jul. 2006 CMP1617BAx-E WRITE CYCLE (1) CMOS LPRAM (/WE controlled, /ZZ=VIH) tWC Address tCW(2) tWR(4) /CS tAW tBW /UB, /LB tWP(1) /WE tAS(3) tDW Data in tWHZ Data Out WRITE CYCLE (2) tDH Data Valid High-Z High-Z tOW Data Undefined (/CS controlled, /ZZ=/WE=VIH) tWC Address tAS(3) tWR(4) tCW(2) /CS tAW tBW /UB, /LB tWP(1) /WE tDW Data in Data Out WRITE CYCLE (3) tDH Data Valid High-Z High-Z (/UB, /LB controlled, /ZZ=VIH) tWC Address tWR(4) tCW(2) /CS tAW tBW /UB, /LB tAS(3) tWP(1) /WE tDW Data in Data Out tDH Data Valid High-Z High-Z 1. A write occurs during the overlap (tWP) of low /CS and /WE. A write begins when /CS goes low and /WE goes low with asserting /UB or /LB for single byte operation or simultaneously asserting /UB and /LB for double byte operation. A write ends at the earliest transition when /CS goes high and WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the /CS going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high. 5. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us. 8 Revision 0.5 Jul. 2006 CMP1617BAx-E PAGE WRITE CYCLE CMOS LPRAM (Address controlled, /ZZ=VIH) tMRC tPC tWC tPC tPC tPC tPC tPC tPC A0~A3 A4~A20 /CS /UB, /LB tAS(3) /WE tDW Data in High-Z tDH Data Valid tDW tDH Data Valid tDW Data Valid tWHZ Data Out tDH tDW tDH Data Valid tDW tDH Data Valid tDW tDH Data Valid tDW tDH Data Valid tDW tDH Data Valid High-Z tOW Data Undefined 1. A write occurs during the overlap (tWP) of low /CS and /WE. A write begins when /CS goes low and /WE goes low with asserting /UB or /LB for single byte operation or simultaneously asserting /UB and /LB for double byte operation. A write ends at the earliest transition when /CS goes high and /WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the /CS going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high. 5. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us. 9 Revision 0.5 Jul. 2006 CMP1617BAx-E CMOS LPRAM LOW POWER MODES 1. Mode Register Set A19 ~ A5 0 A4 A3 A2 ZZ Array On/Off on /ZZ Half Selection Enable/Disable /ZZ Enable/Disable A1 A0 Array Refresh Area Array On/Off on /ZZ A4 Type A3 Type 0 Deep Power Down Enable 0 Partial Array Refresh Mode (Default) 1 DPD Disable (Default) 1 Reduced Memory Size Mode Note: If the register is written to enable the Deep Power Down, the part will go into Deep Power Down during the following time that /ZZ is driven low and there is no MRS update. When /ZZ is driven high, all of the register settings will return to default state for the part (i.e. full array refresh, Deep Power Down Disabled). Half Selection (Top / Bottom) Note: The RMS(Reduced Memory Size) mode is enabled after /ZZ goes high and remains enabled after /ZZ goes high. To change to a different mode, the mode register will have to be rewritten. Array Refresh Area A2 Type A1 A0 Type 0 Bottom (Default) 0 0 Full Array (Default) 1 Top 0 1 RFU 1 0 ½ Array 1 1 ¼ Array 2. MRS Update tWC Address tAS(3) tCW(2) tWR(4) /CS tAW tBW /UB, /LB tWP(1) /WE /ZZ tZZWE Register Write Start Register Write Complete Register Update Complete The register update take place on the rising edge of /ZZ. Once the register is updated, the next time /ZZ goes low, without any updates to the register starting within the tZZWE max time of 1us, the part will refresh the array selected. The data bus is a don’t care When /ZZ is low during the register updates. 10 Revision 0.5 Jul. 2006 CMP1617BAx-E CMOS LPRAM 3. Deep Power Down Mode Entry/Exit tWC A4 tAS(3) tWR(4 ) tCW(2 ) /CS tAW /UB, /LB tBW tWP(1) /WE tZZWE tR Next Cycle tZZmin /ZZ Register Write(DPD) Deep Power down exit Deep Power down start Parameter Description Min Max Units tZZWE ZZ low to Write Enable Low 0 1 us tR(Deep Power Down Mode only) Operation Recovery Time 200 - us tZZmin Low Power Mode Time 10 - us 4. Address Information Partial Array Refresh Mode (A3=0, A4=1) A2 A1,A0 Refresh Section Address Size Density 0 11 1/4 00000h-3FFFFh 256Kbx16 4Mb 0 10 1/2 00000h-7FFFFh 512Kbx16 8Mb X 00 Full 00000h-FFFFFh 1Mbx16 16Mb 1 11 1/4 C0000h-FFFFFh 256Kbx16 4Mb 1 10 1/2 80000h-FFFFFh 512Kbx16 8Mb Reduced Memory Size Mode (A3=1, A4=1) A2 A1,A0 Refresh Section Address Size Density 0 11 1/4 00000h-3FFFFh 256Kbx16 4Mb 0 10 1/2 00000h-7FFFFh 512Kbx16 8Mb 1 11 1/4 C0000h-FFFFFh 256Kbx16 4Mb 1 10 1/2 80000h-FFFFFh 512bx16 8Mb 11 Revision 0.5 Jul. 2006 CMP1617BAx-E CMOS LPRAM PACKAGE DIMENSION Unit : millimeters 48 BALL FINE PITCH BGA(0.75mm ball pitch) Top View Bottom View B A1 INDEX MARK B1 B 0.05 0.05 6 5 4 3 2 1 A B C #A1 C C C1 D C1/2 E F G H B/2 0.25/Typ. E2 D A Y 0.85/Typ. E Detail A E1 0.30 Side View C - Min Typ A - 0.75 Max - B 5.90 6.00 6.10 B1 - 3.75 - C 7.90 8.00 8.10 C1 - 5.25 - D 0.30 0.35 0.40 1.20 E - 1.10 E1 - 0.85 - E2 0.20 0.25 0.30 Y - - 0.08 12 NOTES. 1. Bump counts : 48(8row x 6column) 2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.) 3. All tolerance are +/-0.050 unless otherwise specified. 4. Typ : Typical 5. Y is coplanarity : 0.08(Max) Revision 0.5 Jul. 2006