FIDELIX CMP1617BX4 1m x 16 bit super low power and low voltage full cmos ram Datasheet

CMP1617BAx-E
CMOS LPRAM
Document Title
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
Revision History
Revision
No.
History
Draft date
Remark
0.0
Initial Draft
Dec. 22nd, 2003
Preliminary
0.1
Add Direct DPD
Modify MRS Entry
Modify PASR Current
Mar. 15th, 2004
Preliminary
0.2
Change speed from 60nsec to 55nsec
Modify ISB1, PASR Current
Sep. 21th, 2004
Final
0.3
Modified functional description & MRS update timing
Minor Changes
Nov. 8th, 2004
Final
0.4
Added G(Pb-Free) and H(Pb-Free & Halogen Free) descriptions
Nov. 1st, 2005
Final
0.5
Add AC Parameter (tCP)
Jul. 25th, 2006
Final
1
Revision 0.5
Jul. 2006
CMP1617BAx-E
CMOS LPRAM
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FEATURES
• Process Technology : Full CMOS
• Three state output and TTL Compatible
• Package Type : 48-FBGA-6.00x8.00 mm2
• Separated I/O power(VCCQ) & Core Power(VCC)
• Page read/write operation by 16 words
• Organization : 1M x 16
• Power Supply Voltage : 2.7~3.3V
• Low Power & Page Modes
CMP1617BX1 : support the PASR/MRS DPD function
CMP1617BX2 : support the Direct DPD function
CMP1617BX4 : support the PASR/MRS DPD/PAGE function
CMP1617BX5 : support the Direct DPD/PAGE function
(CMP1617BA4, CMP1617BA5)
• DPD mode by using MRS only
(CMP1617BA1, CMP1617BA4)
• Direct DPD mode when /ZZ goes low
(CMP1617BA2, CMP1617BA5)
PRODUCT FAMILY
Operating
Temperature
Product Family
Power Dissipation
Operating
Voltage (V)
ICC2
f = 1MHz
f = fmax
Speed
Min. Typ. Max.
CMP1617BAx-F60E
CMP1617BAx-F70E
ICC1
Extended
(-25~85’C)
2.7
3.0
3.3
Typ.
60ns
70ns
1.5mA
ISB1
(CMOS Standby
Current)
Max.
Typ.
Max.
Typ.
Max.
3mA
15mA
12mA
25mA
50uA
100uA
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and TA = 25C.
2. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER
PIN DESCRIPTION
1
2
3
4
5
6
A
/LB
/OE
A0
A1
A2
/ZZ
B
I/O9
/UB
A3
A4
/CS
I/O1
C
I/O10
I/O11
A5
A6
I/O2
I/O3
D
VSS
I/O12
A17
A7
I/O4
VCC
E
VCCQ
I/O13
DNU
A16
I/O5
VSS
F
I/O15
I/O14
A14
A15
I/O6
I/O7
G
I/O16
A19
A12
A13
WE
I/O8
H
A18
A8
A9
A10
A11
NC
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
VCC
VSS
Row
Addresses
I/O1~I/O8
Function
Name
Function
/ZZ
Low Power Modes
VCC
Core Power
I/O Power
Chip Select Input
VCCQ
Output Enable Input
VSS
Ground
/CS
/WE
Write Enable Input
/UB
Upper Byte(I/O9~16)
/OE
A0~A19
Address Inputs
/LB
Lower Byte(I/O 1~8)
/WE
Data Inputs/Outputs
No Connection
DNU
I/O Circuit
Column select
Column Addresses
/CS
NC
Data
cont
Memory array
Data
cont
/OE
I/O1~I/O16
Row
select
Data
cont
I/O9~I/O16
48-FBGA : Top View(Ball Down)
Name
Precharge circuit.
/UB
Control Logic
/LB
Do Not Use
/ZZ
2
Revision 0.5
Jul. 2006
CMP1617BAx-E
CMOS LPRAM
PRODUCT LIST
Extended Temperature Products(-25~85’C)
Part Name
Function
CMP1617BAx-F60E
CMP1617BAx-F70E
48-FBGA, 60ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V)
48-FBGA, 70ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V)
1. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER
FUNCTIONAL DESCRIPTION
/CS
/ZZ
/OE
/WE
/LB
/UB
I/O1-8
I/O9-16
Mode
Power
H
H
X1)
X1)
X1)
X1)
High-Z
High-Z
Deselected
Standby
X1)
L
X1)
X1)
X1)
X1)
High-Z
High-Z
Deselected
Direct DPD2)
H
L
X1)
X1)
X1)
X1)
High-Z
High-Z
Deselected
Low Power Modes3)
X1)
H
X1)
X1)
H
H
High-Z
High-Z
Deselected
Standby
H
H
H
L
X1)
High-Z
High-Z
Output Disabled
Active
H
H
H
X1)
L
High-Z
High-Z
Output Disabled
Active
L
H
Dout
High-Z
Lower Byte Read
Active
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
Dout
Dout
Word Read
Active
L
H
Din
High-Z
Lower Byte Write
Active
H
L
High-Z
Din
Upper Byte Write
Active
L
L
Din
Din
Word Write
Active
L
L
L
H
H
X1)
L
1. X means don’t care.(Must be low or high state)
2. In case of CMP1617BA2 & CMP1617BA5 product
3. In case of CMP1617BA1 & CMP1617BA4 product
ABSOLUTE MAXIMUM RATINGS1)
Item
Voltage on any pin relative to Vss
Symbol
Ratings
VIN, VOUT
-0.2 to Vcc+0.3V
V
Vcc
-0.2 to 3.6
V
Voltage on Vcc supply relative to Vss
PD
1.0
W
TSTG
-65 to 150
’C
TA
-25 to 85
’C
Power Dissipation
Storage temperature
Unit
Operating Temperature
1. Str es s e s g r e ate r tha n th o s e l i st e d u n d er “ A bsolute Maxim um Ratings” may cause permanent dam age to the device. Functional
operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
I/O operating voltage (VCCQ ≤ VCC)
Ground
CMP1617BA
Max
VCC
2.7
3.3
2.7
3.3
2.7
3.3
V
VCCQ
2.7
3.3
2.25
2.75
1.65
1.95
V
VSS
0
0
0
0
0
0
V
Input high voltage
VIH
0.8VCCQ
VCC+0.22)
0.8VCCQ
VCC+0.22)
0.8VCCQ
VCC+0.22)
V
Input low voltage
VIL
-0.23)
0.2VCCQ
-0.23)
0.2VCCQ
-0.23)
0.2VCCQ
V
Supply voltage
Min
Max
Min
Max
Unit
Min
Note :
1.TA=-25 to 85’C, otherwise specified.
2. Overshoot : Vcc+1.0V in case of pulse width≤20ns.
3. Undershoot : -1.0V in case of pulse width≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
3
Revision 0.5
Jul. 2006
CMP1617BAx-E
CMOS LPRAM
CAPACITANCE1) (f=1MHz , TA=25’C)
Symbol
Test Condition
Min
Max
Input capacitance
Item
CIN
VIN=0V
-
8
Unit
pF
Input/Output capacitance
CIO
VIO=0V
-
8
pF
1. Capacitance is sampled, not 100% tested.
DC AND OPERATING CHARACTERISTICS
Min
Typ
Max
Unit
Input leakage current
Item
Symbol
ILI
VIN=VSS to VCC
-1
-
1
uA
Output leakage current
ILO
/CS=VIH, /ZZ=VIH, /OE=VIH or /WE=VIL, VIO=VSS to VCC
-1
-
1
uA
ICC1
Cycle time=1us, 100%duty, IIO=0mA, /CS≤0.2V, /ZZ=VIH,
VIN≤0.2V or VIN≥VCC-0.2V
-
-
3
mA
ICC2
Cycle time=Min, IIO=0mA, 100% duty, /CS=VIL, /ZZ=VIH,
VIN=VIL or VIH
-
-
25
mA
Output low voltage
VOL
IOL=0.5mA
0.2VCCQ
V
Output high voltage
VOH
IOH=-0.5mA
Standby Current(TTL)
ISB
/CS=VIH, /ZZ=VIH, Other inputs=VIH or VIL
-
0.3
mA
Standby Current(CMOS)
ISB1
/CS≥VCC-0.2V, /ZZ≥VCC-0.2V, Other inputs=0~VCC
-
-
100
uA
ISB0
/ZZ≤0.2V, Other inputs=0~VCC, No refresh(DPD)
-
-
10
uA
ISB0a
/ZZ≤0.2V, Other inputs=0~VCC, ¼ refresh area selection
-
-
55
uA
ISB0b
/ZZ≤0.2V, Other inputs=0~VCC, ½ refresh area selection
-
-
70
uA
ISB0c
/ZZ≤0.2V, Other inputs=0~VCC, All refresh area selection
-
-
100
uA
Average operating current
Low Power Modes
Test Conditions
0.8VCCQ
4
-
V
Revision 0.5
Jul. 2006
CMP1617BAx-E
CMOS LPRAM
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Input/Output Reference)
30pf
Input pulse level : 0.2 to VCC-0.2V
Input rising and falling time : 5ns
Input and output reference voltage : 0.5*VCCQ
Output load(see right) : CL=30pF+1TTL
1TTL
AC CHARACTERISTICS(VCC=2.7V~3.3V, Extended product : TA=-25 to 85’C)
Speed Bins
Parameter List
Read Cycle Time
Read
Write
60ns
tRC
70ns
Units
Min
Max
Min
Max
60
40k
70
40k
ns
Address Access Time
tAA
-
60
-
70
ns
Chip Select to Output
tCO
-
60
-
70
ns
Output Enable to Valid Output
tOE
-
25
-
25
ns
/UB, /LB Access Time
tBA
-
60
-
70
ns
Chip Select to Low-Z Output
tLZ
10
-
10
-
ns
/UB, /LB Enable to Low-Z Output
tBLZ
10
-
10
-
ns
Output Enable to Low-Z Output
tOLZ
5
-
5
-
ns
Chip Disable to High- Z Output
tHZ
0
5
0
5
ns
/UB, /LB Disable to High- Z Output
tBHZ
0
5
0
5
ns
Output Disable to High- Z Output
tOHZ
0
5
0
5
ns
Output Hold from Address Change
tOH
5
-
5
-
ns
Write Cycle Time
tWC
60
40k
70
40k
ns
ns
Chip Select to End of Write
tCW
50
-
60
-
Address Set-up Time
tAS
0
-
0
-
ns
Address Valid to End of Write
tAW
50
-
60
-
ns
/UB, /LB Valid to End of Write
tBW
50
-
60
-
ns
Write Pulse Width
tWP
50
-
50
-
ns
Write Recovery Time
Write to Output High-Z
Page
Symbol
tWR
0
-
0
-
ns
tWHZ
0
5
0
5
ns
Data to Write Time Overlap
tDW
20
-
20
-
ns
Data Hold from Write Time
tDH
0
-
0
-
ns
End Write to Output Low-Z
tOW
5
-
5
-
ns
Page Mode Cycle Time
tPC
25
-
25
-
ns
Page Mode Address Access Time
tPAA
-
25
-
25
ns
Maximum Cycle Time
tMRC
-
40k
-
40k
ns
/CS High Pulse Width
tCP
10
-
10
-
ns
1. /CS High Pulse Width is defined by /CS or (/UB and /LB) because /UB & /LB can make standby mode when /UB=High and /LB=High.
5
Revision 0.5
Jul. 2006
CMP1617BAx-E
CMOS LPRAM
Power Up Sequence
1. Apply Power
2. Maintain stable power for a minimum of 200us with /CS=VIH
Standby Mode State machines
Power On
/CS=VIH
Wait 200us
/CS=VIH, /ZZ=VIH
Initial State
/CS=VIL, /ZZ=VIH
/UB or/and /LB=VIL
/CS=VIH, /ZZ=VIL
Active
Mode
/CS=VIL
/ZZ=VIH
/CS=VIH
/ZZ=VIL
/CS=VIH
(or/and /UB=/LB=VIH)
/ZZ=VIH
/CS=VIH, /ZZ=VIL
Standby Mode
/CS=VIlL
/ZZ=VIH
Low Power
Modes 1
(16M/8M/4M bits)
Low Power
Modes 2
(Data Invalid)
/CS=VIH, /ZZ=VIL
Standby Mode Characteristics
Mode
Memory Cell Data
Standby Current(uA)
Wait Time(us)
Standby
Valid
100 (ISB1)
0
Invalid
10 (ISB0)
200
¼ valid
55 (ISB0a)
0
½ valid
70 (ISB0b)
0
valid
100 (ISB0c)
0
Low Power Modes
6
Revision 0.5
Jul. 2006
CMP1617BAx-E
READ CYCLE (1)
CMOS LPRAM
(Address controlled,/CS=/OE=VIL, /ZZ=/WE=VIH, /UB or/and /LB=VIL)
tRC
Address
tOH
Data Out
READ CYCLE (2)
tAA
Previous Data Valid
Data Valid
(/ZZ=/WE=VIH)
tRC
Address
tOH
tAA
tCO
/CS
tHZ
tBA
/UB, /LB
tBHZ
tOE
/OE
tOLZ
Data Out
tOHZ
tBLZ
tLZ
High-Z
Data Valid
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced
to output voltage levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device
to device interconnection.
3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us.
PAGE READ CYCLE
(/ZZ=/WE=VIH, 16 words access)
tMRC
tRC
tPC
tPC
tPC
tPC
tPC
tPC
tPC
A0~A3
tAA
A4~A20
tOH
tCO
/CS
tHZ
tBA
/UB, /LB
tBHZ
tOE
/OE
tOLZ
tBLZ
Data Out
High-Z
tLZ
tPAA
tPAA
Data Valid
Data Valid
tPAA
Data Valid
tPAA
Data Valid
tPAA
Data Valid
tPAA
Data Valid
tPAA
Data Valid
tOHZ
Data Valid
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced
to output voltage levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device
to device interconnection.
3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us.
7
Revision 0.5
Jul. 2006
CMP1617BAx-E
WRITE CYCLE (1)
CMOS LPRAM
(/WE controlled, /ZZ=VIH)
tWC
Address
tCW(2)
tWR(4)
/CS
tAW
tBW
/UB, /LB
tWP(1)
/WE
tAS(3)
tDW
Data in
tWHZ
Data Out
WRITE CYCLE (2)
tDH
Data Valid
High-Z
High-Z
tOW
Data Undefined
(/CS controlled, /ZZ=/WE=VIH)
tWC
Address
tAS(3)
tWR(4)
tCW(2)
/CS
tAW
tBW
/UB, /LB
tWP(1)
/WE
tDW
Data in
Data Out
WRITE CYCLE (3)
tDH
Data Valid
High-Z
High-Z
(/UB, /LB controlled, /ZZ=VIH)
tWC
Address
tWR(4)
tCW(2)
/CS
tAW
tBW
/UB, /LB
tAS(3)
tWP(1)
/WE
tDW
Data in
Data Out
tDH
Data Valid
High-Z
High-Z
1. A write occurs during the overlap (tWP) of low /CS and /WE. A write begins when /CS goes low and /WE goes low with
asserting /UB or /LB for single byte operation or simultaneously asserting /UB and /LB for double byte operation. A write
ends at the earliest transition when /CS goes high and WE goes high. The tWP is measured from the beginning of write to
the end of write.
2. tCW is measured from the /CS going low to end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high.
5. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us.
8
Revision 0.5
Jul. 2006
CMP1617BAx-E
PAGE WRITE CYCLE
CMOS LPRAM
(Address controlled, /ZZ=VIH)
tMRC
tPC
tWC
tPC
tPC
tPC
tPC
tPC
tPC
A0~A3
A4~A20
/CS
/UB, /LB
tAS(3)
/WE
tDW
Data in
High-Z
tDH
Data Valid
tDW
tDH
Data Valid
tDW
Data Valid
tWHZ
Data Out
tDH
tDW
tDH
Data Valid
tDW
tDH
Data Valid
tDW
tDH
Data Valid
tDW
tDH
Data Valid
tDW
tDH
Data Valid
High-Z
tOW
Data Undefined
1. A write occurs during the overlap (tWP) of low /CS and /WE. A write begins when /CS goes low and /WE goes low with
asserting /UB or /LB for single byte operation or simultaneously asserting /UB and /LB for double byte operation. A write
ends at the earliest transition when /CS goes high and /WE goes high. The tWP is measured from the beginning of write to
the end of write.
2. tCW is measured from the /CS going low to end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high.
5. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us.
9
Revision 0.5
Jul. 2006
CMP1617BAx-E
CMOS LPRAM
LOW POWER MODES
1. Mode Register Set
A19 ~ A5
0
A4
A3
A2
ZZ
Array On/Off
on /ZZ
Half Selection
Enable/Disable
/ZZ Enable/Disable
A1
A0
Array Refresh Area
Array On/Off on /ZZ
A4
Type
A3
Type
0
Deep Power Down Enable
0
Partial Array Refresh Mode (Default)
1
DPD Disable (Default)
1
Reduced Memory Size Mode
Note: If the register is written to enable the Deep
Power Down, the part will go into Deep Power Down
during the following time that /ZZ is driven low and
there is no MRS update. When /ZZ is driven high, all
of the register settings will return to default state for
the part (i.e. full array refresh, Deep Power Down
Disabled).
Half Selection (Top / Bottom)
Note: The RMS(Reduced Memory Size) mode is enabled after
/ZZ goes high and remains enabled after /ZZ goes high. To
change to a different mode, the mode register will have to be
rewritten.
Array Refresh Area
A2
Type
A1
A0
Type
0
Bottom (Default)
0
0
Full Array (Default)
1
Top
0
1
RFU
1
0
½ Array
1
1
¼ Array
2. MRS Update
tWC
Address
tAS(3)
tCW(2)
tWR(4)
/CS
tAW
tBW
/UB, /LB
tWP(1)
/WE
/ZZ
tZZWE
Register Write Start
Register Write
Complete
Register Update
Complete
The register update take place on the rising edge of /ZZ. Once the register is updated, the next time /ZZ goes low, without any
updates to the register starting within the tZZWE max time of 1us, the part will refresh the array selected. The data bus is a
don’t care When /ZZ is low during the register updates.
10
Revision 0.5
Jul. 2006
CMP1617BAx-E
CMOS LPRAM
3. Deep Power Down Mode Entry/Exit
tWC
A4
tAS(3)
tWR(4
)
tCW(2
)
/CS
tAW
/UB, /LB
tBW
tWP(1)
/WE
tZZWE
tR
Next
Cycle
tZZmin
/ZZ
Register
Write(DPD)
Deep Power
down exit
Deep Power
down start
Parameter
Description
Min
Max
Units
tZZWE
ZZ low to Write Enable Low
0
1
us
tR(Deep Power Down Mode only)
Operation Recovery Time
200
-
us
tZZmin
Low Power Mode Time
10
-
us
4. Address Information
Partial Array Refresh Mode (A3=0, A4=1)
A2
A1,A0
Refresh Section
Address
Size
Density
0
11
1/4
00000h-3FFFFh
256Kbx16
4Mb
0
10
1/2
00000h-7FFFFh
512Kbx16
8Mb
X
00
Full
00000h-FFFFFh
1Mbx16
16Mb
1
11
1/4
C0000h-FFFFFh
256Kbx16
4Mb
1
10
1/2
80000h-FFFFFh
512Kbx16
8Mb
Reduced Memory Size Mode (A3=1, A4=1)
A2
A1,A0
Refresh Section
Address
Size
Density
0
11
1/4
00000h-3FFFFh
256Kbx16
4Mb
0
10
1/2
00000h-7FFFFh
512Kbx16
8Mb
1
11
1/4
C0000h-FFFFFh
256Kbx16
4Mb
1
10
1/2
80000h-FFFFFh
512bx16
8Mb
11
Revision 0.5
Jul. 2006
CMP1617BAx-E
CMOS LPRAM
PACKAGE DIMENSION
Unit : millimeters
48 BALL FINE PITCH BGA(0.75mm ball pitch)
Top View
Bottom View
B
A1 INDEX MARK
B1
B
0.05
0.05
6
5
4
3
2
1
A
B
C
#A1
C
C
C1
D
C1/2
E
F
G
H
B/2
0.25/Typ.
E2
D
A
Y
0.85/Typ.
E
Detail A
E1
0.30
Side View
C
-
Min
Typ
A
-
0.75
Max
-
B
5.90
6.00
6.10
B1
-
3.75
-
C
7.90
8.00
8.10
C1
-
5.25
-
D
0.30
0.35
0.40
1.20
E
-
1.10
E1
-
0.85
-
E2
0.20
0.25
0.30
Y
-
-
0.08
12
NOTES.
1. Bump counts : 48(8row x 6column)
2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.)
3. All tolerance are +/-0.050 unless
otherwise specified.
4. Typ : Typical
5. Y is coplanarity : 0.08(Max)
Revision 0.5
Jul. 2006
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