Renesas ISL6326BIRZ 4-phase pwm controller with 8-bit dac code capable of precision dcr differential current sensing Datasheet

DATASHEET
ISL6326B
FN9286
Rev 0.00
Apr 26, 2006
4-Phase PWM Controller with 8-Bit DAC Code Capable of Precision DCR
Differential Current Sensing
The ISL6326B controls microprocessor core voltage
regulation by driving up to 4 synchronous-rectified buck
channels in parallel. Multiphase buck converter architecture
uses interleaved timing to multiply channel ripple frequency
and reduce input and output ripple currents. Lower ripple
results in fewer components, lower component cost, reduced
power dissipation, and smaller implementation area.
Microprocessor loads can generate load transients with
extremely fast edge rates. The ISL6326B utilizes Intersil’s
proprietary Active Pulse Positioning (APP) and Adaptive
Phase Alignment (APA) modulation scheme to achieve the
extremely fast transient response with fewer output
capacitors.
Features
• Proprietary Active Pulse Positioning and Adaptive Phase
Alignment Modulation Scheme
• Precision Multiphase Core Voltage Regulation
- Differential Remote Voltage Sensing
- 0.5% System Accuracy Over Life, Load, Line and
Temperature
- Adjustable Precision Reference-Voltage Offset
• Precision resistor or DCR Current Sensing
- Accurate Load-Line Programming
- Accurate Channel-Current Balancing
- Differential Current Sense
Today’s microprocessors require a tightly regulated output
voltage position versus load current (droop). The ISL6326B
senses the output current continuously by utilizing patented
techniques to measure the voltage across the dedicated
current sense resistor or the DCR of the output inductor. The
sensed current flows out of FB pin to develop the precision
voltage drop across the feedback resistor for droop control.
Current sensing also provides the needed signals for
channel-current balancing, and overcurrent protection. A
programmable integrated temperature compensation
function is implemented to effectively compensate for the
temperature coefficient of the current sense element. The
current limit function provides the overcurrent protection for
the individual phase.
• Microprocessor Voltage Identification Input
- Dynamic VID™ Technology
- 8-Bit VID Input with Selectable VR11 Code and
Extended VR10 Code at 6.25mV Per Bit
A unity gain, differential amplifier is provided for remote
voltage sensing. Any potential difference between remote
and local grounds can be completely eliminated using the
remote-sense amplifier. Eliminating ground differences
improves regulation and protection accuracy. The thresholdsensitive enable input is available to accurately coordinate
the start up of the ISL6326B with any other voltage rail.
Dynamic-VID™ technology allows seamless on-the-fly VID
changes. The offset pin allows accurate voltage offset
settings that are independent of VID setting.
• Adjustable Switching Frequency up to 1MHz Per Phase
• Thermal Monitoring
• Integrated Programmable Temperature Compensation
• Overcurrent Protection and Channel Current Limit
• Load Current Indicator and External Overcurrent
Protection Threshold Setup
• Overvoltage Protection
• 2, 3 or 4 Phase Operation
• Package Option
- QFN Compliant to JEDEC PUB95 MO-220 QFN - Quad
Flat No Leads - Product Outline
- QFN Near Chip Scale Package Footprint; Improves
PCB Efficiency, Thinner in Profile
• Pb-Free Plus Anneal Available (RoHS Compliant)
Ordering Information
PART
NUMBER
(Note)
PART
MARKING
ISL6326BCRZ ISL6326BCRZ
ISL6326BIRZ
ISL6326BIRZ
TEMP.
(°C)
0 to70
PACKAGE
(Pb-Free)
PKG.
DWG. #
40 Ld 6x6 QFN L40.6x6
-40 to 85 40 Ld 6x6 QFN L40.6x6
Add “-T” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
FN9286 Rev 0.00
Apr 26, 2006
Page 1 of 30
ISL6326B
Pinout
FN9286 Rev 0.00
Apr 26, 2006
VID7
TM
VR_HOT
VR_FAN
VR_RDY
SS
FS
EN_VTT
EN_PWR
PWM3
ISL6326B (40 LD QFN)
TOP VIEW
40
39
38
37
36
35
34
33
32
31
VID6
1
30
ISEN3+
VID5
2
29
ISEN3-
VID4
3
28
ISEN2-
VID3
4
27
ISEN2+
VID2
5
26
PWM2
VID1
6
25
PWM4
VID0
7
24
ISEN4+
VRSEL
8
23
ISEN4-
OFS
9
22
ISEN1-
DAC
10
21
ISEN1+
11
12
13
14
15
16
17
18
19
20
REF
COMP
FB
IOUT
VDIFF
RGND
VSEN
TCOMP
VCC
PWM1
GND
Page 2 of 30
ISL6326B
ISL6326BCR Block Diagram
VDIFF VR_RDY
FS
CLOCK AND
RAMP GENERATOR
RGND
-
VSEN
+
-
POW ER-ON
RESET (POR)
0.875
+
X1
EN_VTT
N
+
-
OVP
0.875
+
SOFTSTART
AND
FAULT LOGIC
+175m V
EN_PW R
APP and APA
MODULATOR
PW M1
SS
VRSEL
APP and APA
MODULATOR
VID7
PW M2
VID6
VID5
Dynam ic
VID
D/A
VID4
VID3
APP and APA
MODULATOR
VID2
PW M3
VID1
VID0
DAC
OFS
APP and APA
MODULATOR
PW M4
OFFSET
REF
+
FB
-
CHANNEL
CURRENT
BALANCE
AND PEAK
CURRENT LIMIT
E/A
COMP
2.0V
-
O CP
+
OCP
-
CHANNEL
DETECT
N
ISEN1+
I_TRIP
ISEN1-
+
ISEN2+
1
N
IOUT

TEMPERATURE
COMPENSATION
CHANNEL
CURRENT
SENSE
ISEN2ISEN3+
ISEN3ISEN4+
VR_HOT
ISEN4THERMAL
MONITOR
TEMPERATURE
COMPENSATION
GAIN ADJUST
TM
TCOMP
VR_FAN
FN9286 Rev 0.00
Apr 26, 2006
GND
Page 3 of 30
ISL6326B
Typical Application - 4-Phase Buck Converter with Integrated Thermal Compensation
+12V
BOOT
PVCC
+5V
VCC
VIN
UGATE
PHASE
ISL6612
DRIVER
COMP VCC
FB
DAC
LGATE
GND
PWM
REF
VDIFF
VSEN
PWM1
RGND
VTT
ISEN1-
EN_VTT
+12V
BOOT
PVCC
VIN
ISEN1+
VR_RDY
VCC
VID7
PHASE
ISL6326B
VID6
UGATE
ISL6612
VID5
DRIVER
VID4
PWM2
VID3
VID2
LGATE
GND
PWM
ISEN2-
VID1
ISEN2+
VID0
+12V
VRSEL
PWM3
VR_FAN
BOOT
PVCC
VIN
uP
LOAD
ISEN3-
VR_HOT
ISEN3+
VIN
VCC
UGATE
PHASE
ISL6612
DRIVER
EN_PWR
GND
PWM
GND
LGATE
PWM4
IOUT
ISEN4ISEN4+
TCOMP
TM
+5V
+5V
OFS
FS
SS
+12V
BOOT
PVCC
VCC
VIN
UGATE
PHASE
ISL6612
NTC
DRIVER
PWM
FN9286 Rev 0.00
Apr 26, 2006
LGATE
GND
Page 4 of 30
ISL6326B
Typical Application - 4-Phase Buck Converter with External Thermal Compensation
NTC
o
+12V
+5V
C
VIN
BOOT1
VCC
UGATE1
PHASE1
COMP VCC
FB
DAC
REF
GND
LGATE1
VDIFF
VSEN
RGND
VTT
ISEN1+
EN_VTT
ISL6614
PVCC
DRIVER
BOOT2
5V
To
12V
VIN
ISEN1-
VR_RDY
PWM1
VID7
PWM1
UGATE2
PHASE2
VID6
ISL6326B
VID5
LGATE2
VID4
VID3
PWM3
VID2
PGND
PWM2
ISEN3-
VID1
ISEN3+
VID0
VRSEL
ISEN2+
VR_FAN
ISEN2-
VR_HOT
PWM2
VIN
+12V
VIN
BOOT1
VCC
uP
LOAD
UGATE1
EN_PWR
PHASE1
PWM4
GND
GND
ISEN4-
LGATE1
ISEN4+
IOUT
TCOMP
TM
+5V
OFS
FS
SS
PWM1
ISL6614
PVCC
DRIVER
BOOT2
5V
To
12V
VIN
UGATE2
PHASE2
NTC
LGATE2
PWM2
FN9286 Rev 0.00
Apr 26, 2006
PGND
Page 5 of 30
ISL6326B
Absolute Maximum Ratings
Thermal Information
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+6V
All Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V to VCC + 0.3V
ESD (Human Body Model). . . . . . . . . . . . . . . . . . . . . . . . . . . . .>2kV
ESD (Machine Model) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>200V
ESD (Charged Device Model) . . . . . . . . . . . . . . . . . . . . . . . . >1.5kV
Thermal Resistance (Notes 1, 2)
JA (°C/W)
JC (°C/W)
QFN Package. . . . . . . . . . . . . . . . . . . .
32
3.5
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
Operating Conditions
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5V ±5%
Ambient Temperature (ISL6326BCRZ) . . . . . . . . . . . . . 0°C to 70°C
Ambient Temperature (ISL6326BIRZ) . . . . . . . . . . . . .-40°C to 85°C
CAUTION: Stress above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational section of this specification is not implied.
NOTES:
1. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379
2. For JC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
Operating Conditions: VCC = 5V, Unless Otherwise Specified
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Nominal Supply
VCC = 5VDC; EN_PWR = 5VDC; RT = 100k
ISEN1 = ISEN2 = ISEN3 = ISEN4 = -70A
-
18
26
mA
Shutdown Supply
VCC = 5VDC; EN_PWR = 0VDC; RT = 100k
-
14
21
mA
VCC Rising
4.3
4.5
4.7
V
VCC Falling
3.7
3.9
4.2
V
0.850
0.875
0.910
V
-
130
-
mV
Falling
0.720
0.745
0.775
V
Rising
0.850
0.875
0.910
V
-
130
-
mV
0.720
0.745
0.775
V
POWER-ON RESET AND ENABLE
POR Threshold
EN_PWR Threshold
Rising
Hysteresis
EN_VTT Threshold
Hysteresis
Falling
REFERENCE VOLTAGE AND DAC
System Accuracy of ISL6326BCRZ
(VID = 1V-1.6V, TJ = 0°C to 70°C)
(Note 3)
-0.5
-
0.5
%VID
System Accuracy of ISL6326BCRZ
(VID = 0.5V-1V, TJ = 0°C to 70°C)
(Note 3)
-0.9
-
0.9
%VID
System Accuracy of ISL6326BIRZ
(VID = 1V-1.6V, TJ = -40°C to 85°C)
(Note 3)
-0.6
-
0.6
%VID
System Accuracy of ISL6326BIRZ
(VID = 0.5V-1V, TJ = -40°C to 85°C)
(Note 3)
-1
-
1
%VID
-60
-40
-20
µA
VID Input Low Level
-
-
0.4
V
VID Input High Level
0.8
-
-
V
VRSEL Input Low Level
-
-
0.4
V
VRSEL Input High Level
0.8
-
-
V
-
4
7
mA
VID Pull Up
DAC Source Current
FN9286 Rev 0.00
Apr 26, 2006
Page 6 of 30
ISL6326B
Electrical Specifications
Operating Conditions: VCC = 5V, Unless Otherwise Specified (Continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
-
-
300
µA
REF Source Current
45
50
55
µA
REF Sink Current
45
50
55
µA
Offset resistor connected to ground
380
400
420
mV
Voltage below VCC, offset resistor connected to VCC
1.55
1.60
1.65
V
RT = 100k
225
250
275
kHz
0.08
-
1.0
MHz
-
1.563
-
mV/µs
0.625
-
6.25
mV/µs
-
1.25
-
V
DAC Sink Current
PIN-ADJUSTABLE OFFSET
Voltage at OFS Pin
OSCILLATORS
Accuracy of Switching Frequency Setting
Adjustment Range of Switching Frequency (Note 4)
Soft-start Ramp Rate
RS = 100k(Notes 5, 6)
Adjustment Range of Soft-Start Ramp Rate (Note 4)
PWM GENERATOR
Sawtooth Amplitude
ERROR AMPLIFIER
Open-Loop Gain
RL = 10k to ground (Note 4)
-
96
-
dB
Open-Loop Bandwidth
(Note 4)
-
80
-
MHz
Slew Rate
(Note 4)
-
25
-
V/µs
Maximum Output Voltage
3.8
4.3
4.9
V
Output High Voltage @ 2mA
3.6
-
-
V
Output Low Voltage @ 2mA
-
-
1.8
V
-
20
-
MHz
REMOTE-SENSE AMPLIFIER
Bandwidth
(Note 4)
Output High Current
VSEN - RGND = 2.5V
-500
-
500
µA
Output High Current
VSEN - RGND = 0.6
-500
-
500
µA
PWM OUTPUT
PWM Output Voltage LOW Threshold
Iload = ±500A
-
-
0.5
V
PWM Output Voltage HIGH Threshold
Iload = ±500A
4.3
-
-
V
57
60
63
µA
Overcurrent Trip Level for Average Current
72
85
98
µA
Peak Current Limit for Individual Channel
100
120
140
µA
IOUT Trip Level for Overcurrent protection
1.85
2.0
2.15
V
TM Input Voltage for VR_FAN Trip
1.55
1.65
1.75
V
TM Input Voltage for VR_FAN Reset
1.85
1.95
2.05
V
TM Input Voltage for VR_HOT Trip
1.30
1.40
1.50
V
TM Input Voltage for VR_HOT Reset
1.55
1.65
1.75
V
CURRENT SENSE AND OVERCURRENT PROTECTION
Sensed Current Tolerance (IOUT)
ISEN1 = ISEN2 = ISEN3 = ISEN4 = 60A
THERMAL MONITORING AND FAN CONTROL
Leakage Current of VR_FAN
With externally pull-up resistor connected to VCC
-
-
30
µA
VR_FAN Low Voltage
With 1.25k resistor pull-up to VCC, IVR_FAN = 4mA
-
-
0.4
V
FN9286 Rev 0.00
Apr 26, 2006
Page 7 of 30
ISL6326B
Electrical Specifications
Operating Conditions: VCC = 5V, Unless Otherwise Specified (Continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Leakage Current of VR_HOT
With externally pull-up resistor connected to VCC
-
-
30
µA
VR_HOT Low Voltage
With 1.25k resistor pull-up to VCC, IVR_HOT = 4mA
-
-
0.4
V
VR READY AND PROTECTION MONITORS
Leakage Current of VR_RDY
With externally pull-up resistor connected to VCC
-
-
30
A
VR_RDY Low Voltage
IVR_RDY = 4mA
-
-
0.4
V
Undervoltage Threshold
VDIFF Falling
48
50
52
%VID
VR_RDY Reset Voltage
VDIFF Rising
58
60
62
%VID
Overvoltage Protection Threshold
Before valid VID
1.250
1.275
1.300
V
150
175
200
mV
-
100
-
mV
After valid VID, the voltage above VID
Overvoltage Protection Reset Hysteresis
NOTES:
3. These parts are designed and adjusted for accuracy with all errors in the voltage loop included.
4. Spec guaranteed by design.
5. During soft-start, VDAC rises from 0 to 1.1V first and then ramp to VID voltage after receiving valid VID.
6. Soft-start ramp rate is determined by the adjustable soft-start oscillator frequency at the speed of 6.25mV per cycle.
FN9286 Rev 0.00
Apr 26, 2006
Page 8 of 30
ISL6326B
Functional Pin Description
VCC - Supplies the power necessary to operate the chip. The
controller starts to operate when the voltage on this pin
exceeds the rising POR threshold and shuts down when the
voltage on this pin drops below the falling POR threshold.
Connect this pin directly to a +5V supply.
GND - Bias and reference ground for the IC. The bottom metal
base of ISL6326B is the GND.
EN_PWR - This pin is a threshold-sensitive enable input for
the controller. Connecting the 12V supply to EN_PWR through
an appropriate resistor divider provides a means to
synchronize power-up of the controller and the MOSFET driver
ICs. When EN_PWR is driven above 0.875V, the ISL6326B is
active depending on status of EN_VTT, the internal POR, and
pending fault states. Driving EN_PWR below 0.745V will clear
all fault states and prime the ISL6326B to soft-start when reenabled.
EN_VTT - This pin is another threshold-sensitive enable input
for the controller. It’s typically connected to VTT output of VTT
voltage regulator in the computer mother board. When
EN_VTT is driven above 0.875V, the ISL6326B is active
depending on status of EN_PWR, the internal POR, and
pending fault states. Driving EN_VTT below 0.745V will clear
all fault states and prime the ISL6326B to soft-start when reenabled.
FS - Use this pin to set up the desired switching frequency. A
resistor, placed from FS to ground will set the switching
frequency. The relationship between the value of the resistor
and the switching frequency will be described by an
approximate equation.
SS - Use this pin to set up the desired start-up oscillator
frequency. A resistor, placed from SS to ground will set up the
soft-start ramp rate. The relationship between the value of the
resistor and the soft-start ramp up time will be described by an
approximate equation.
VID7, VID6, VID5, VID4, VID3, VID2, VID1 and VID0 - These
are the inputs to the internal DAC that generates the reference
voltage for output regulation. Connect these pins either to
open-drain outputs with or without external pull-up resistors or
to active-pull-up outputs. All VID pins have 40µA internal pullup current sources that diminish to zero as the voltage rises
above the logic-high level. These inputs can be pulled up
externally as high as VCC plus 0.3V.
VRSEL - use this pin to select internal VID code. When it is
connected to GND, the extended VR10 code is selected.
When it’s floated or pulled to high, VR11 code is selected. This
input can be pulled up as high as VCC plus 0.3V.
VDIFF, VSEN, and RGND - VSEN and RGND form the
precision differential remote-sense amplifier. This amplifier
converts the differential voltage of the remote output to a
single-ended voltage referenced to local ground. VDIFF is the
FN9286 Rev 0.00
Apr 26, 2006
amplifier’s output and the input to the regulation and protection
circuitry. Connect VSEN and RGND to the sense pins of the
remote load.
FB and COMP - Inverting input and output of the error
amplifier respectively. FB can be connected to VDIFF through
a resistor. A properly chosen resistor between VDIFF and FB
can set the load line (droop), because the sensed current will
flow out of FB pin. The droop scale factor is set by the ratio of
the ISEN resistors and the inductor DCR or the dedicated
current sense resistor. COMP is tied back to FB through an
external R-C network to compensate the regulator.
DAC and REF - The DAC pin is the output of the precision
internal DAC reference. The REF pin is the positive input of the
Error Amp. In typical applications, a 1k, 1% resistor is used
between DAC and REF to generate a precision offset voltage.
This voltage is proportional to the offset current determined by
the offset resistor from OFS to ground or VCC. A capacitor is
used between REF and ground to smooth the voltage
transition during Dynamic VID™ operations.
PWM1, PWM2, PWM3, PWM4 - Pulse width modulation
outputs. Connect these pins to the PWM input pins of the
Intersil driver IC. The number of active channels is determined
by the state of PWM3 and PWM4. Tie PWM3 to VCC to
configure for 2-phase operation. Tie PWM4 to VCC to
configure for 3-phase operation.
ISEN1+, ISEN1-; ISEN2+, ISEN2-; ISEN3+, ISEN3-; ISEN4+,
ISEN4- - The ISEN+ and ISEN- pins are current sense inputs
to individual differential amplifiers. The sensed current is used
for channel current balancing, overcurrent protection, and
droop regulation. Inactive channels should have their
respective current sense inputs left open (for example, open
ISEN4+ and ISEN4- for 3-phase operation).
For DCR sensing, connect each ISEN- pin to the node
between the RC sense elements. Tie the ISEN+ pin to the
other end of the sense capacitor through a resistor, RISEN. The
voltage across the sense capacitor is proportional to the
inductor current. Therefore, the sense current is proportional to
the inductor current, and scaled by the DCR of the inductor
and RISEN.
To match the time delay of the internal circuit, a capacitor is
needed between each ISEN+ pin and GND, as described in
the Current Sensing section.
VR_RDY - VR_RDY indicates that soft-start has completed
and the output voltage is within the regulated range around
VID setting. It is an open-drain logic output. When OCP or
OVP occurs, VR_RDY will be pulled to low. It will also be pulled
low if the output voltage is below the under-voltage threshold.
OFS - The OFS pin can be used to program a DC offset
current which will generate a DC offset voltage between the
REF and DAC pins. The offset current is generated via an
external resistor and precision internal voltage references. The
Page 9 of 30
ISL6326B
polarity of the offset is selected by connecting the resistor to
GND or VCC. For no offset, the OFS pin should be left
unterminated.
TCOMP - Temperature compensation scaling input. The
voltage sensed on the TM pin is utilized as the temperature
input to adjust ldroop and the overcurrent protection limit to
effectively compensate for the temperature coefficient of the
current sense element. To implement the integrated
temperature compensation, a resistor divider circuit is needed
with one resistor being connected from TCOMP to VCC of the
controller and another resistor being connected from TCOMP
to GND. Changing the ratio of the resistor values will set the
gain of the integrated thermal compensation. When integrated
temperature compensation function is not used, connect
TCOMP to GND.
IOUT - IOUT is the output pin of sensed average channel
current. In actual application, a resistor needs to be placed
between IOUT and GND to ensure the proper operation. The
voltage at IOUT pin will be proportional to the load current and
the resistor value. ISL6326B monitors the voltage at IOUT for
overcurrent protection. If the voltage at IOUT pin is higher than
2V, it will trigger the overcurrent shutdown. By choosing the
proper value for the resistor at IOUT pin, the overcurrent trip
level can be set to be lower than the fixed internal overcurrent
threshold. Tie it to GND if not used.
TM - TM is an input pin for the VR temperature measurement.
Connect this pin through an NTC thermistor to GND and a
resistor to VCC of the controller. The voltage at this pin is
reverse proportional to the VR temperature. ISL6326B
monitors the VR temperature based on the voltage at the TM
pin and outputs VR_HOT and VR_FAN signals.
VR_HOT - VR_HOT is used as an indication of high VR
temperature. It is an open-drain logic output. It will be pulled
low if the measured VR temperature is less than a certain level,
and open when the measured VR temperature reaches a
certain level. A external pull-up resistor is needed.
VR_FAN - VR_FAN is an output pin with open-drain logic
output. It will be pulled low if the measured VR temperature is
less than a certain level, and open when the measured VR
temperature reaches a certain level. A external pull-up resistor
is needed.
Operation
Multiphase Power Conversion
Microprocessor load current profiles have changed to the point
that the advantages of multiphase power conversion are
impossible to ignore. The technical challenges associated with
producing a single-phase converter which is both cost-effective
and thermally viable have forced a change to the cost-saving
approach of multiphase. The ISL6326B controller helps reduce
the complexity of implementation by integrating vital functions
and requiring minimal output components. The block diagrams
on pages 3, 4, and 5 provide top level views of multiphase
power conversion using the ISL6326B controller.
Interleaving
The switching of each channel in a multiphase converter is
timed to be symmetrically out of phase with each of the other
channels. In a 3-phase converter, each channel switches 1/3
cycle after the previous channel and 1/3 cycle before the
following channel. As a result, the three-phase converter has a
combined ripple frequency three times greater than the ripple
frequency of any one phase. In addition, the peak-to-peak
amplitude of the combined inductor currents is reduced in
proportion to the number of phases (Equations 1 and 2).
Increased ripple frequency and lower ripple amplitude mean
that the designer can use less per-channel inductance and
lower total output capacitance for any performance
specification.
Figure 1 illustrates the multiplicative effect on output ripple
frequency. The three channel currents (IL1, IL2, and IL3)
combine to form the AC ripple current and the DC load current.
The ripple component has three times the ripple frequency of
each individual channel current. Each PWM pulse is terminated
1/3 of a cycle after the PWM pulse of the previous phase. The
DC components of the inductor currents combine to feed the
load.
IL1 + IL2 + IL3, 7A/DIV
IL1, 7A/DIV
PWM1, 5V/DIV
IL2, 7A/DIV
PWM2, 5V/DIV
IL3, 7A/DIV
PWM3, 5V/DIV
1µs/DIV
FIGURE 1. PWM AND INDUCTOR-CURRENT WAVEFORMS
FOR 3-PHASE CONVERTER
FN9286 Rev 0.00
Apr 26, 2006
Page 10 of 30
ISL6326B
To understand the reduction of ripple current amplitude in the
multiphase circuit, examine the equation representing an
individual channel’s peak-to-peak inductor current.
 V IN – V OUT  V OUT
I PP = ----------------------------------------------------L fS V
(EQ. 1)
IN
In Equation 1, VIN and VOUT are the input and output voltages
respectively, L is the single-channel inductor value, and fS is
the switching frequency.
The ISL6326B adopts Intersil's proprietary Active Pulse
Positioning (APP) modulation scheme to improve transient
performance. APP control is a unique dual-edge PWM
modulation scheme with both PWM leading and trailing edges
being independently moved to give the best response to
transient loads. The PWM frequency, however, is constant and
set by the external resistor between the FS pin and GND. To
further improve the transient response, the ISL6326B also
implements Intersil's proprietary Adaptive Phase Alignment
(APA) technique. APA, with sufficiently large load step
currents, can turn on all phases together. With both APP and
APA control, ISL6326B can achieve excellent transient
performance and reduce the demand on the output capacitors.
CHANNEL 1
INPUT CURRENT
10A/DIV
CHANNEL 2
INPUT CURRENT
10A/DIV
CHANNEL 3
INPUT CURRENT
10A/DIV
1µs/DIV
FIGURE 2. CHANNEL INPUT CURRENTS AND INPUTCAPACITOR RMS CURRENT FOR 3-PHASE
CONVERTER
The output capacitors conduct the ripple component of the
inductor current. In the case of multiphase converters, the
capacitor current is the sum of the ripple currents from each of
the individual channels. Compare Equation 1 to the expression
for the peak-to-peak current after the summation of N
symmetrically phase-shifted inductor currents in Equation 2.
Peak-to-peak ripple current decreases by an amount
proportional to the number of channels. Output-voltage ripple
is a function of capacitance, capacitor equivalent series
resistance (ESR), and inductor ripple current. Reducing the
inductor ripple current allows the designer to use fewer or less
costly output capacitors.
(EQ. 2)
IN
Another benefit of interleaving is to reduce input ripple current.
Input capacitance is determined in part by the maximum input
ripple current. Multiphase topologies can improve overall
system cost and size by lowering input ripple current and
allowing the designer to reduce the cost of input capacitance.
The example in Figure 2 illustrates input currents from a threephase converter combining to reduce the total input ripple
current.
The converter depicted in Figure 2 delivers 36A to a 1.5V load
from a 12V input. The RMS input capacitor current is 5.9A.
Compare this to a single-phase converter also stepping down
12V to 1.5V at 36A. The single-phase converter has 11.9A RMS
FN9286 Rev 0.00
Apr 26, 2006
Figures 17, 18 and 19 in the section entitled Input Capacitor
Selection can be used to determine the input-capacitor RMS
current based on load current, duty cycle, and the number of
channels. They are provided as aids in determining the optimal
input capacitor solution. Figure 20 shows the single phase
input-capacitor RMS current for comparison.
PWM Modulation Scheme
INPUT-CAPACITOR CURRENT, 10A/DIV
 V IN – N V OUT  V OUT
I C, PP = ----------------------------------------------------------L fS V
input capacitor current. The single-phase converter must use an
input capacitor bank with twice the RMS current capacity as the
equivalent three-phase converter.
Under steady state conditions the operation of the ISL6326B
PWM modulator appears to be that of a conventional trailing
edge modulator. Conventional analysis and design methods
can therefore be used for steady state and small signal
operation.
PWM Operation
The timing of each channel is set by the number of active
channels. The default channel setting for the ISL6326B is four.
The switching cycle is defined as the time between PWM pulse
termination signals of each channel. The cycle time of the
pulse signal is the inverse of the switching frequency set by the
resistor between the FS pin and ground. The PWM signals
command the MOSFET driver to turn on/off the channel
MOSFETs.
For 4-channel operation, the channel firing order is 4-3-2-1:
PWM3 pulse happens 1/4 of a cycle after PWM4, PWM2
output follows another 1/4 of a cycle after PWM3, and PWM1
delays another 1/4 of a cycle after PWM2. For 3-channel
operation, the channel firing order is 3-2-1.
Connecting PWM4 to VCC selects three channel operation
and the pulse times are spaced in 1/3 cycle increments. If
PWM3 is connected to VCC, two channel operation is selected
and the PWM2 pulse happens 1/2 of a cycle after PWM pulse.
Switching Frequency
Switching frequency is determined by the selection of the
frequency-setting resistor, RT, which is connected from FS pin
to GND (see the figures labelled Typical Applications on pages
Page 11 of 30
ISL6326B
4 and 5). Equation 3 is provided to assist in selecting the
correct resistor value.
VIN
I s
L
10
L
ISL6605
DCR
+
INDUCTOR
where FSW is the switching frequency of each phase.
VL
+
VC(s)
Current Sensing
ISL6326B senses the current continuously for fast response.
ISL6326B supports inductor DCR sensing, or resistive sensing
techniques. The associated channel current sense amplifier
uses the ISEN inputs to reproduce a signal proportional to the
inductor current, IL. The sense current, ISEN, is proportional to
the inductor current. The sensed current is used for current
balance, load-line regulation, and overcurrent protection.
The internal circuitry, shown in Figures 3, and 4, represents
one channel of an N-channel converter. This circuitry is
repeated for each channel in the converter, but may not be
active depending on the status of the PWM3 and PWM4 pins,
as described in the PWM Operation section.
INDUCTOR DCR SENSING
An inductor’s winding is characteristic of a distributed
resistance as measured by the DCR (Direct Current
Resistance) parameter. Consider the inductor DCR as a
separate lumped quantity, as shown in Figure 3. The channel
current IL, flowing through the inductor, will also pass through
the DCR. Equation 4 shows the s-domain equivalent voltage
across the inductor VL.
V L = I L   s  L + DCR 
(EQ. 4)
A simple R-C network across the inductor extracts the DCR
voltage, as shown in Figure 3.
R
PWM(n)
COUT
C
ISL6326B INTERNAL CIRCUIT
RISEN(n)
(PTC)
In
CURRENT
ISEN-(n)
SENSE
+
-
ISEN+(n)
CT
DCR
I SEN = I ----------------LR
ISEN
FIGURE 3. DCR SENSING CONFIGURATION
With the internal low-offset current amplifier, the capacitor
voltage VC is replicated across the sense resistor RISEN.
Therefore, the current out of ISEN+ pin, ISEN, is proportional to
the inductor current.
Because of the internal filter at ISEN- pin, one capacitor, CT, is
needed to match the time delay between the ISEN- and ISEN+
signals. Select the proper CT to keep the time constant of
RISEN and CT (RISEN x CT ) close to 27ns.
Equation 6 shows that the ratio of the channel current to the
sensed current, ISEN, is driven by the value of the sense
resistor and the DCR of the inductor.
The voltage on the capacitor VC, can be shown to be
proportional to the channel current IL, see Equation 5.
L
 s  ------------+ 1   DCR  I L 
 DCR

V C = -------------------------------------------------------------------- s  RC + 1 
VOUT
-
(EQ. 3)
-
2.5X10
R T = -------------------------F SW
(EQ. 5)
If the R-C network components are selected such that the RC
time constant (= R*C) matches the inductor time constant (=
L/DCR), the voltage across the capacitor VC is equal to the
voltage drop across the DCR, i.e., proportional to the channel
current.
DCR
I SEN = I L  -----------------R
ISEN
(EQ. 6)
RESISTIVE SENSING
For accurate current sense, a dedicated current-sense resistor
RSENSE in series with each output inductor can serve as the
current sense element (see Figure 4). This technique is more
accurate, but reduces overall converter efficiency due to the
additional power loss on the current sense element RSENSE.
The same capacitor CT is needed to match the time delay
between ISEN- and ISEN+ signals. Select the proper CT to
keep the time constant of RISEN and CT (RISEN x CT ) close to
27ns.
FN9286 Rev 0.00
Apr 26, 2006
Page 12 of 30
ISL6326B
Equation 7 shows the ratio of the channel current to the
sensed current ISEN.
R SENSE
I SEN = I L  ----------------------R ISEN
(EQ. 7)
I
L
L
RSENSE VOUT
COUT
ISL6326B INTERNAL CIRCUIT
The sensed average current IAVG is tied to FB internally. This
current will develop voltage drop across the resistor between
FB and VDIFF pins for droop control. ISL6326B can not be
used for non-droop applications.
The output of the error amplifier, VCOMP, is compared to
sawtooth waveforms to generate the PWM signals. The PWM
signals control the timing of the Intersil MOSFET drivers and
regulate the converter output to the specified reference
voltage. The internal and external circuitry which control
voltage regulation is illustrated in Figure 5.
RISEN(n)
In
EXTERNAL CIRCUIT
R C CC
COMP
ISL6326B INTERNAL CIRCUIT
CURRENT
ISEN-(n)
SENSE
DAC
+
RREF
-
ISEN+(n)
R SENSE
I
SEN = I L ------------------------R ISEN
FIGURE 4. SENSE RESISTOR IN SERIES WITH INDUCTORS
The inductor DCR value will increase as the temperature
increases. Therefore the sensed current will increase as the
temperature of the current sense element increases. In order
to compensate the temperature effect on the sensed current
signal, a Positive Temperature Coefficient (PTC) resistor can
be selected for the sense resistor RISEN, or the integrated
temperature compensation function of ISL6326B should be
utilized. The integrated temperature compensation function is
described in the Temperature Compensation section.
Channel-Current Balance
The sensed current In from each active channel are summed
together and divided by the number of active channels. The
resulting average current IAVG provides a measure of the total
load current. Channel current balance is achieved by
comparing the sensed current of each channel to the average
current to make an appropriate adjustment to the PWM duty
cycle of each channel with Intersil’s patented current-balance
method.
Channel current balance is essential in achieving the thermal
advantage of multiphase operation. With good current balance,
the power loss is equally dissipated over multiple devices and
a greater area.
Voltage Regulation
The compensation network shown in Figure 5 assures that the
steady-state error in the output voltage is limited only to the
error in the reference voltage (output of the DAC) and offset
errors in the OFS current source, remote-sense and error
amplifiers. Intersil specifies the guaranteed tolerance of the
ISL6326B to include the combined tolerances of each of these
elements.
FN9286 Rev 0.00
Apr 26, 2006
REF
CREF
CT
+
-
FB
RFB
+
VDROOP
-
VOUT+
VOUT-
VCOMP
ERROR AMPLIFIER
IAVG
VDIFF
VSEN
+
RGND
DIFFERENTIAL
REMOTE-SENSE
AMPLIFIER
FIGURE 5. OUTPUT VOLTAGE AND LOAD-LINE
REGULATION WITH OFFSET ADJUSTMENT
The ISL6326B incorporates an internal differential remotesense amplifier in the feedback path. The amplifier removes
the voltage error encountered when measuring the output
voltage relative to the local controller ground reference point
resulting in a more accurate means of sensing output voltage.
Connect the microprocessor sense pins to the non-inverting
input, VSEN, and inverting input, RGND, of the remote-sense
amplifier. The remote-sense output, VDIFF, is connected to the
inverting input of the error amplifier through an external
resistor.
A digital-to-analog converter (DAC) generates a reference
voltage based on the state of logic signals at pins VID7 through
VID0. The DAC decodes the eight 6-bit logic signal (VID) into
one of the discrete voltages shown in Table 1. Each VID input
offers a 45µA pull-up to an internal 2.5V source for use with
open-drain outputs. The pull-up current diminishes to zero
above the logic threshold to protect voltage-sensitive output
devices. External pull-up resistors can augment the pull-up
current sources if case leakage into the driving device is
greater than 45µA.
Page 13 of 30
ISL6326B
TABLE 1. VR10 VID TABLE (WITH 6.25mV EXTENSION)
VID4 VID3 VID2 VID1 VID0 VID5
VID6 VOLTAGE
400mV 200mV 100mV 50mV 25mV 12.5mV 6.25mV
(V)
TABLE 1. VR10 VID TABLE (WITH 6.25mV EXTENSION)
(Continued)
VID4 VID3 VID2 VID1 VID0 VID5
VID6 VOLTAGE
400mV 200mV 100mV 50mV 25mV 12.5mV 6.25mV
(V)
0
1
0
1
0
1
1
1.6
1
0
1
0
0
0
0
1.35625
0
1
0
1
0
1
0
1.59375
1
0
1
0
0
1
1
1.35
0
1
0
1
1
0
1
1.5875
1
0
1
0
0
1
0
1.34375
0
1
0
1
1
0
0
1.58125
1
0
1
0
1
0
1
1.3375
0
1
0
1
1
1
1
1.575
1
0
1
0
1
0
0
1.33125
0
1
0
1
1
1
0
1.56875
1
0
1
0
1
1
1
1.325
0
1
1
0
0
0
1
1.5625
1
0
1
0
1
1
0
1.31875
0
1
1
0
0
0
0
1.55625
1
0
1
1
0
0
1
1.3125
0
1
1
0
0
1
1
1.55
1
0
1
1
0
0
0
1.30625
0
1
1
0
0
1
0
1.54375
1
0
1
1
0
1
1
1.3
0
1
1
0
1
0
1
1.5375
1
0
1
1
0
1
0
1.29375
0
1
1
0
1
0
0
1.53125
1
0
1
1
1
0
1
1.2875
0
1
1
0
1
1
1
1.525
1
0
1
1
1
0
0
1.28125
0
1
1
0
1
1
0
1.51875
1
0
1
1
1
1
1
1.275
0
1
1
1
0
0
1
1.5125
1
0
1
1
1
1
0
1.26875
0
1
1
1
0
0
0
1.50625
1
1
0
0
0
0
1
1.2625
0
1
1
1
0
1
1
1.5
1
1
0
0
0
0
0
1.25625
0
1
1
1
0
1
0
1.49375
1
1
0
0
0
1
1
1.25
0
1
1
1
1
0
1
1.4875
1
1
0
0
0
1
0
1.24375
0
1
1
1
1
0
0
1.48125
1
1
0
0
1
0
1
1.2375
0
1
1
1
1
1
1
1.475
1
1
0
0
1
0
0
1.23125
0
1
1
1
1
1
0
1.46875
1
1
0
0
1
1
1
1.225
1
0
0
0
0
0
1
1.4625
1
1
0
0
1
1
0
1.21875
1
0
0
0
0
0
0
1.45625
1
1
0
1
0
0
1
1.2125
1
0
0
0
0
1
1
1.45
1
1
0
1
0
0
0
1.20625
1
0
0
0
0
1
0
1.44375
1
1
0
1
0
1
1
1.2
1
0
0
0
1
0
1
1.4375
1
1
0
1
0
1
0
1.19375
1
0
0
0
1
0
0
1.43125
1
1
0
1
1
0
1
1.1875
1
0
0
0
1
1
1
1.425
1
1
0
1
1
0
0
1.18125
1
0
0
0
1
1
0
1.41875
1
1
0
1
1
1
1
1.175
1
0
0
1
0
0
1
1.4125
1
1
0
1
1
1
0
1.16875
1
0
0
1
0
0
0
1.40625
1
1
1
0
0
0
1
1.1625
1
0
0
1
0
1
1
1.4
1
1
1
0
0
0
0
1.15625
1
0
0
1
0
1
0
1.39375
1
1
1
0
0
1
1
1.15
1
0
0
1
1
0
1
1.3875
1
1
1
0
0
1
0
1.14375
1
0
0
1
1
0
0
1.38125
1
1
1
0
1
0
1
1.1375
1
0
0
1
1
1
1
1.375
1
1
1
0
1
0
0
1.13125
1
0
0
1
1
1
0
1.36875
1
1
1
0
1
1
1
1.125
1
0
1
0
0
0
1
1.3625
1
1
1
0
1
1
0
1.11875
FN9286 Rev 0.00
Apr 26, 2006
Page 14 of 30
ISL6326B
TABLE 1. VR10 VID TABLE (WITH 6.25mV EXTENSION)
(Continued)
VID4 VID3 VID2 VID1 VID0 VID5
VID6 VOLTAGE
400mV 200mV 100mV 50mV 25mV 12.5mV 6.25mV
(V)
TABLE 1. VR10 VID TABLE (WITH 6.25mV EXTENSION)
(Continued)
VID4 VID3 VID2 VID1 VID0 VID5
VID6 VOLTAGE
400mV 200mV 100mV 50mV 25mV 12.5mV 6.25mV
(V)
1
1
1
1
0
0
1
1.1125
0
0
1
1
1
1
0
0.89375
1
1
1
1
0
0
0
1.10625
0
1
0
0
0
0
1
0.8875
1
1
1
1
0
1
1
1.1
0
1
0
0
0
0
0
0.88125
1
1
1
1
0
1
0
1.09375
0
1
0
0
0
1
1
0.875
1
1
1
1
1
0
1
OFF
0
1
0
0
0
1
0
0.86875
1
1
1
1
1
0
0
OFF
0
1
0
0
1
0
1
0.8625
1
1
1
1
1
1
1
OFF
0
1
0
0
1
0
0
0.85625
1
1
1
1
1
1
0
OFF
0
1
0
0
1
1
1
0.85
0
0
0
0
0
0
1
1.0875
0
1
0
0
1
1
0
0.84375
0
0
0
0
0
0
0
1.08125
0
1
0
1
0
0
1
0.8375
0
0
0
0
0
1
1
1.075
0
1
0
1
0
0
0
0.83125
0
0
0
0
0
1
0
1.06875
0
0
0
0
1
0
1
1.0625
0
0
0
0
1
0
0
1.05625
0
0
0
0
1
1
1
1.05
0
0
0
0
1
1
0
1.04375
0
0
0
1
0
0
1
1.0375
0
0
0
1
0
0
0
1.03125
0
0
0
1
0
1
1
1.025
0
0
0
1
0
1
0
1.01875
0
0
0
1
1
0
1
1.0125
0
0
0
1
1
0
0
1.00625
0
0
0
1
1
1
1
1
0
0
0
1
1
1
0
0.99375
0
0
1
0
0
0
1
0.9875
0
0
1
0
0
0
0
0.98125
0
0
1
0
0
1
1
0.975
0
0
1
0
0
1
0
0.96875
0
0
1
0
1
0
1
0.9625
0
0
1
0
1
0
0
0.95625
0
0
1
0
1
1
1
0.95
0
0
1
0
1
1
0
0.94375
0
0
1
1
0
0
1
0.9375
0
0
1
1
0
0
0
0.93125
0
0
1
1
0
1
1
0.925
0
0
1
1
0
1
0
0.91875
0
0
1
1
1
0
1
0.9125
0
0
1
1
1
0
0
0.90625
0
0
1
1
1
1
1
0.9
FN9286 Rev 0.00
Apr 26, 2006
TABLE 2. VR11 VID 8 BIT
VID7 VID6 VID5 VID4 VID3 VID2 VID1 VID0 VOLTAGE
0
0
0
0
0
0
0
0
OFF
0
0
0
0
0
0
0
1
OFF
0
0
0
0
0
0
1
0
1.60000
0
0
0
0
0
0
1
1
1.59375
0
0
0
0
0
1
0
0
1.58750
0
0
0
0
0
1
0
1
1.58125
0
0
0
0
0
1
1
0
1.57500
0
0
0
0
0
1
1
1
1.56875
0
0
0
0
1
0
0
0
1.56250
0
0
0
0
1
0
0
1
1.55625
0
0
0
0
1
0
1
0
1.55000
0
0
0
0
1
0
1
1
1.54375
0
0
0
0
1
1
0
0
1.53750
0
0
0
0
1
1
0
1
1.53125
0
0
0
0
1
1
1
0
1.52500
0
0
0
0
1
1
1
1
1.51875
0
0
0
1
0
0
0
0
1.51250
0
0
0
1
0
0
0
1
1.50625
0
0
0
1
0
0
1
0
1.50000
0
0
0
1
0
0
1
1
1.49375
0
0
0
1
0
1
0
0
1.48750
0
0
0
1
0
1
0
1
1.48125
0
0
0
1
0
1
1
0
1.47500
0
0
0
1
0
1
1
1
1.46875
0
0
0
1
1
0
0
0
1.46250
Page 15 of 30
ISL6326B
TABLE 2. VR11 VID 8 BIT (Continued)
TABLE 2. VR11 VID 8 BIT (Continued)
VID7 VID6 VID5 VID4 VID3 VID2 VID1 VID0 VOLTAGE
VID7 VID6 VID5 VID4 VID3 VID2 VID1 VID0 VOLTAGE
0
0
0
1
1
0
0
1
1.45625
0
1
0
0
0
0
0
1
1.20625
0
0
0
1
1
0
1
0
1.45000
0
1
0
0
0
0
1
0
1.20000
0
0
0
1
1
0
1
1
1.44375
0
1
0
0
0
0
1
1
1.19375
0
0
0
1
1
1
0
0
1.43750
0
1
0
0
0
1
0
0
1.18750
0
0
0
1
1
1
0
1
1.43125
0
1
0
0
0
1
0
1
1.18125
0
0
0
1
1
1
1
0
1.42500
0
1
0
0
0
1
1
0
1.17500
0
0
0
1
1
1
1
1
1.41875
0
1
0
0
0
1
1
1
1.16875
0
0
1
0
0
0
0
0
1.41250
0
1
0
0
1
0
0
0
1.16250
0
0
1
0
0
0
0
1
1.40625
0
1
0
0
1
0
0
1
1.15625
0
0
1
0
0
0
1
0
1.40000
0
1
0
0
1
0
1
0
1.15000
0
0
1
0
0
0
1
1
1.39375
0
1
0
0
1
0
1
1
1.14375
0
0
1
0
0
1
0
0
1.38750
0
1
0
0
1
1
0
0
1.13750
0
0
1
0
0
1
0
1
1.38125
0
1
0
0
1
1
0
1
1.13125
0
0
1
0
0
1
1
0
1.37500
0
1
0
0
1
1
1
0
1.12500
0
0
1
0
0
1
1
1
1.36875
0
1
0
0
1
1
1
1
1.11875
0
0
1
0
1
0
0
0
1.36250
0
1
0
1
0
0
0
0
1.11250
0
0
1
0
1
0
0
1
1.35625
0
1
0
1
0
0
0
1
1.10625
0
0
1
0
1
0
1
0
1.35000
0
1
0
1
0
0
1
0
1.10000
0
0
1
0
1
0
1
1
1.34375
0
1
0
1
0
0
1
1
1.09375
0
0
1
0
1
1
0
0
1.33750
0
1
0
1
0
1
0
0
1.08750
0
0
1
0
1
1
0
1
1.33125
0
1
0
1
0
1
0
1
1.08125
0
0
1
0
1
1
1
0
1.32500
0
1
0
1
0
1
1
0
1.07500
0
0
1
0
1
1
1
1
1.31875
0
1
0
1
0
1
1
1
1.06875
0
0
1
1
0
0
0
0
1.31250
0
1
0
1
1
0
0
0
1.06250
0
0
1
1
0
0
0
1
1.30625
0
1
0
1
1
0
0
1
1.05625
0
0
1
1
0
0
1
0
1.30000
0
1
0
1
1
0
1
0
1.05000
0
0
1
1
0
0
1
1
1.29375
0
1
0
1
1
0
1
1
1.04375
0
0
1
1
0
1
0
0
1.28750
0
1
0
1
1
1
0
0
1.03750
0
0
1
1
0
1
0
1
1.28125
0
1
0
1
1
1
0
1
1.03125
0
0
1
1
0
1
1
0
1.27500
0
1
0
1
1
1
1
0
1.02500
0
0
1
1
0
1
1
1
1.26875
0
1
0
1
1
1
1
1
1.01875
0
0
1
1
1
0
0
0
1.26250
0
1
1
0
0
0
0
0
1.01250
0
0
1
1
1
0
0
1
1.25625
0
1
1
0
0
0
0
1
1.00625
0
0
1
1
1
0
1
0
1.25000
0
1
1
0
0
0
1
0
1.00000
0
0
1
1
1
0
1
1
1.24375
0
1
1
0
0
0
1
1
0.99375
0
0
1
1
1
1
0
0
1.23750
0
1
1
0
0
1
0
0
0.98750
0
0
1
1
1
1
0
1
1.23125
0
1
1
0
0
1
0
1
0.98125
0
0
1
1
1
1
1
0
1.22500
0
1
1
0
0
1
1
0
0.97500
0
0
1
1
1
1
1
1
1.21875
0
1
1
0
0
1
1
1
0.96875
0
1
0
0
0
0
0
0
1.21250
0
1
1
0
1
0
0
0
0.96250
FN9286 Rev 0.00
Apr 26, 2006
Page 16 of 30
ISL6326B
TABLE 2. VR11 VID 8 BIT (Continued)
TABLE 2. VR11 VID 8 BIT (Continued)
VID7 VID6 VID5 VID4 VID3 VID2 VID1 VID0 VOLTAGE
VID7 VID6 VID5 VID4 VID3 VID2 VID1 VID0 VOLTAGE
0
1
1
0
1
0
0
1
0.95625
1
0
0
1
0
0
0
1
0.70625
0
1
1
0
1
0
1
0
0.95000
1
0
0
1
0
0
1
0
0.70000
0
1
1
0
1
0
1
1
0.94375
1
0
0
1
0
0
1
1
0.69375
0
1
1
0
1
1
0
0
0.93750
1
0
0
1
0
1
0
0
0.68750
0
1
1
0
1
1
0
1
0.93125
1
0
0
1
0
1
0
1
0.68125
0
1
1
0
1
1
1
0
0.92500
1
0
0
1
0
1
1
0
0.67500
0
1
1
0
1
1
1
1
0.91875
1
0
0
1
0
1
1
1
0.66875
0
1
1
1
0
0
0
0
0.91250
1
0
0
1
1
0
0
0
0.66250
0
1
1
1
0
0
0
1
0.90625
1
0
0
1
1
0
0
1
0.65625
0
1
1
1
0
0
1
0
0.90000
1
0
0
1
1
0
1
0
0.65000
0
1
1
1
0
0
1
1
0.89375
1
0
0
1
1
0
1
1
0.64375
0
1
1
1
0
1
0
0
0.88750
1
0
0
1
1
1
0
0
0.63750
0
1
1
1
0
1
0
1
0.88125
1
0
0
1
1
1
0
1
0.63125
0
1
1
1
0
1
1
0
0.87500
1
0
0
1
1
1
1
0
0.62500
0
1
1
1
0
1
1
1
0.86875
1
0
0
1
1
1
1
1
0.61875
0
1
1
1
1
0
0
0
0.86250
1
0
1
0
0
0
0
0
0.61250
0
1
1
1
1
0
0
1
0.85625
1
0
1
0
0
0
0
1
0.60625
0
1
1
1
1
0
1
0
0.85000
1
0
1
0
0
0
1
0
0.60000
0
1
1
1
1
0
1
1
0.84375
1
0
1
0
0
0
1
1
0.59375
0
1
1
1
1
1
0
0
0.83750
1
0
1
0
0
1
0
0
0.58750
0
1
1
1
1
1
0
1
0.83125
1
0
1
0
0
1
0
1
0.58125
0
1
1
1
1
1
1
0
0.82500
1
0
1
0
0
1
1
0
0.57500
0
1
1
1
1
1
1
1
0.81875
1
0
1
0
0
1
1
1
0.56875
1
0
0
0
0
0
0
0
0.81250
1
0
1
0
1
0
0
0
0.56250
1
0
0
0
0
0
0
1
0.80625
1
0
1
0
1
0
0
1
0.55625
1
0
0
0
0
0
1
0
0.80000
1
0
1
0
1
0
1
0
0.55000
1
0
0
0
0
0
1
1
0.79375
1
0
1
0
1
0
1
1
0.54375
1
0
0
0
0
1
0
0
0.78750
1
0
1
0
1
1
0
0
0.53750
1
0
0
0
0
1
0
1
0.78125
1
0
1
0
1
1
0
1
0.53125
1
0
0
0
0
1
1
0
0.77500
1
0
1
0
1
1
1
0
0.52500
1
0
0
0
0
1
1
1
0.76875
1
0
1
0
1
1
1
1
0.51875
1
0
0
0
1
0
0
0
0.76250
1
0
1
1
0
0
0
0
0.51250
1
0
0
0
1
0
0
1
0.75625
1
0
1
1
0
0
0
1
0.50625
1
0
0
0
1
0
1
0
0.75000
1
0
1
1
0
0
1
0
0.50000
1
0
0
0
1
0
1
1
0.74375
1
1
1
1
1
1
1
0
OFF
1
0
0
0
1
1
0
0
0.73750
1
1
1
1
1
1
1
1
OFF
1
0
0
0
1
1
0
1
0.73125
1
0
0
0
1
1
1
0
0.72500
1
0
0
0
1
1
1
1
0.71875
1
0
0
1
0
0
0
0
0.71250
FN9286 Rev 0.00
Apr 26, 2006
Page 17 of 30
ISL6326B
Load-Line Regulation
Output-Voltage Offset Programming
Some microprocessor manufacturers require a preciselycontrolled output resistance. This dependence of output
voltage on load current is often termed “droop” or “load line”
regulation. By adding a well controlled output impedance, the
output voltage can effectively be level shifted in a direction
which works to achieve the load-line regulation required by
these manufacturers.
The ISL6326B allows the designer to accurately adjust the
offset voltage. When a resistor, ROFS, is connected between
OFS to VCC, the voltage across it is regulated to 1.6V. This
causes a proportional current (IOFS) to flow into OFS. If ROFS
is connected to ground, the voltage across it is regulated to
0.4V, and IOFS flows out of OFS. A resistor between DAC and
REF, RREF, is selected so that the product (IOFS x ROFS) is
equal to the desired offset voltage. These functions are shown
in Figure 6.
In other cases, the designer may determine that a more costeffective solution can be achieved by adding droop. Droop can
help to reduce the output-voltage spike that results from fast
load-current demand changes.
The magnitude of the spike is dictated by the ESR and ESL of
the output capacitors selected. By positioning the no-load
voltage level near the upper specification limit, a larger
negative spike can be sustained without crossing the lower
limit. By adding a well controlled output impedance, the output
voltage under load can effectively be level shifted down so that
a larger positive spike can be sustained without crossing the
upper specification limit.
Once the desired output offset voltage has been determined,
use the following formulas to set ROFS:
For Positive Offset (connect ROFS to VCC):
1.6  R REF
R OFS = -----------------------------V OFFSET
(EQ. 11)
For Negative Offset (connect ROFS to GND):
0.4  R REF
R OFS = -----------------------------V OFFSET
(EQ. 12)
As shown in Figure 5, a current proportional to the average
current of all active channels, IAVG, flows from FB through a
load-line regulation resistor RFB. The resulting voltage drop
across RFB is proportional to the output current, effectively
creating an output voltage droop with a steady-state value
defined as
V DROOP = I AVG R FB
FB
DYNAMIC
VID D/A
(EQ. 8)
DAC
RREF
E/A
REF
The regulated output voltage is reduced by the droop voltage
VDROOP. The output voltage as a function of load current is
derived by combining Equation 8 with the appropriate sample
current expression defined by the current sense method
employed.
 I LOAD R X

- ------------------ R FB
V OUT = V REF – V OFS –  ---------------N
R


ISEN
CREF
VCC
OR
GND
(EQ. 9)
Where VREF is the reference voltage, VOFS is the
programmed offset voltage, ILOAD is the total output current of
the converter, RISEN is the sense resistor connected to the
ISEN+ pin, and RFB is the feedback resistor, N is the active
channel number, and RX is the DCR, or RSENSE depending on
the sensing method.
1.6V
-
ROFS
+
+
0.4V
VCC
-
ISL6326B
OFS
GND
FIGURE 6. OUTPUT VOLTAGE OFFSET PROGRAMMING
Therefore the equivalent loadline impedance, i.e. Droop
impedance, is equal to:
R FB R X
R LL = ----------------------------N R ISEN
FN9286 Rev 0.00
Apr 26, 2006
(EQ. 10)
Page 18 of 30
ISL6326B
Dynamic VID
ISL6326B INTERNAL CIRCUIT
Modern microprocessors need to make changes to their core
voltage as part of normal operation. They direct the corevoltage regulator to do this by making changes to the VID
inputs during regulator operation. The power management
solution is required to monitor the DAC inputs and respond to
on-the-fly VID changes in a controlled manner. Supervising the
safe output voltage transition within the DAC range of the
processor without discontinuity or disruption is a necessary
function of the core-voltage regulator.
C REF R REF = T VID
(EQ. 13)
Operation Initialization
Prior to converter initialization, proper conditions must exist on
the enable inputs and VCC. When the conditions are met, the
controller begins soft-start. Once the output voltage is within
the proper window of operation, VR_RDY asserts logic high.
Enable and Disable
While in shutdown mode, the PWM outputs are held in a highimpedance state to assure the drivers remain off. The following
input conditions must be met before the ISL6326B is released
from shutdown mode.
1. The bias voltage applied at VCC must reach the internal
power-on reset (POR) rising threshold. Once this threshold
is reached, proper operation of all aspects of the ISL6326B
is guaranteed. Hysteresis between the rising and falling
thresholds assure that once enabled, the ISL6326B will not
inadvertently turn off unless the bias voltage drops
substantially (see Electrical Specifications).
2. The ISL6326B features an enable input (EN_PWR) for
power sequencing between the controller bias voltage and
another voltage rail. The enable comparator holds the
ISL6326B in shutdown until the voltage at EN_PWR rises
above 0.875V. The enable comparator has about 130mV of
hysteresis to prevent bounce. It is important that the driver
ICs reach their POR level before the ISL6326B becomes
enabled. The schematic in Figure 7 demonstrates
sequencing the ISL6326B with the ISL66xx family of Intersil
MOSFET drivers, which require 12V bias.
3. The voltage on EN_VTT must be higher than 0.875V to
enable the controller. This pin is typically connected to the
output of VTT VR.
FN9286 Rev 0.00
Apr 26, 2006
+12V
VCC
POR
CIRCUIT
ENABLE
COMPARATOR
+
-
10k
EN_PWR
91
0.875V
In order to ensure the smooth transition of output voltage
during VID change, a VID step change smoothing network,
composed of RREF and CREF as shown in Figure 6, can be
used. The selection of RREF is based on the desired offset
voltage as detailed above in Output-Voltage Offset
Programming. The selection of CREF is based on the time
duration for 1 bit VID change and the allowable delay time.
Assuming the microprocessor controls the VID change at 1 bit
every TVID, the relationship between the time constant of
RREF and CREF network and TVID is given by the following
equation.
EXTERNAL CIRCUIT
+
EN_VTT
-
0.875V
SOFT-START
AND
FAULT LOGIC
FIGURE 7. POWER SEQUENCING USING THRESHOLDSENSITIVE ENABLE (EN) FUNCTION
When all conditions above are satisfied, ISL6326B begins the
soft-start and ramps the output voltage to 1.1V first. After
remaining at 1.1V for some time, ISL6326B reads the VID code
at VID input pins. If the VID code is valid, ISL6326B will
regulate the output to the final VID setting. If the VID code is
OFF code, ISL6326B will shut down, and cycling VCC,
EN_PWR or EN_VTT is needed to restart.
Soft-Start
ISL6326B based VR has 4 periods during soft-start as shown
in Figure 8. After VCC, EN_VTT and EN_PWR reach their
POR/enable thresholds, The controller will have fixed delay
period TD1. After this delay period, the VR will begin first softstart ramp until the output voltage reaches 1.1V Vboot voltage.
Then, the controller will regulate the VR voltage at 1.1V for
another fixed period TD3. At the end of TD3 period, ISL6326B
reads the VID signals. If the VID code is valid, ISL6326B will
initiate the second soft-start ramp until the voltage reaches the
VID voltage minus offset voltage.
The soft-start time is the sum of the 4 periods as shown in the
following equation.
T SS = TD1 + TD2 + TD3 + TD4
(EQ. 14)
TD1 is a fixed delay with the typical value as 1.36ms. TD3 is
determined by the fixed 85µs plus the time to obtain valid VID
voltage. If the VID is valid before the output reaches the 1.1V,
the minimum time to validate the VID input is 500ns. Therefore
the minimum TD3 is about 86µs.
During TD2 and TD4, ISL6326B digitally controls the DAC
voltage change at 6.25mV per step. The time for each step is
Page 19 of 30
ISL6326B
determined by the frequency of the soft-start oscillator which is
defined by the resistor RSS from SS pin to GND. The second
soft-start ramp time TD2 and TD4 can be calculated based on
the following equations:
1.1xR SS
TD2 = ------------------------  s 
6.25x25
(EQ. 15)
Fault Monitoring and Protection
 V VID – 1.1 xR SS
TD4 = ------------------------------------------------  s 
6.25x25
(EQ. 16)
For example, when VID is set to 1.5V and the RSS is set at
100k, the first soft-start ramp time TD2 will be 704µs and the
second soft-start ramp time TD4 will be 256µs.
After the DAC voltage reaches the final VID setting, VR_RDY
will be set to high with the fixed delay TD5. The typical value
for TD5 is 85µs.
VOUT, 500mV/DIV
TD1
TD2
TD3 TD4
TD5
The ISL6326B actively monitors output voltage and current to
detect fault conditions. Fault monitors trigger protective
measures to prevent damage to a microprocessor load. One
common power good indicator is provided for linking to
external system monitors. The schematic in Figure 9 outlines
the interaction between the fault monitors and the VR_RDY
signal.
VR_RDY Signal
The VR_RDY pin is an open-drain logic output to indicate that
the soft-start period has completed and the output voltage is
within the regulated range. VR_RDY is pulled low during
shutdown and releases high after a successful soft-start and a
fixed delay TD5. VR_RDY will be pulled low when an
undervoltage or overvoltage condition is detected, or the
controller is disabled by a reset from EN_PWR, EN_VTT, POR,
or VID OFF-code.
Undervoltage Detection
The undervoltage threshold is set at 50% of the VID code.
When the output voltage at VSEN is below the undervoltage
threshold, VR_RDY is pulled low.
EN_VTT
Overvoltage Protection
VR_RDY
500µs/DIV
FIGURE 8. SOFT-START WAVEFORMS
Current Sense Output
The current flowing out of the IOUT pin is equal to the sensed
average current inside ISL6326B. In typical application, a
resistor is placed from the IOUT pin to GND to generate a
voltage, which is proportional to the load current and the
resistor value:
R IOUT R X
- ------------------ I LOAD
V IOUT = -----------------N
R ISEN
(EQ. 17)
where VIOUT is the voltage at the IOUT pin, RIOUT is the
resistor between the IOUT pin and GND, ILOAD is the total
output current of the converter, RISEN is the sense resistor
connected to the ISEN+ pin, N is the active channel number,
and RX is the DC resistance of the current sense element,
either the DCR of the inductor or RSENSE depending on the
sensing method.
The resistor from the IOUT pin to GND should be chosen to
ensure that the voltage at the IOUT pin is less than 2V under
the maximum load current. If the IOUT pin voltage is higher
FN9286 Rev 0.00
Apr 26, 2006
than 2V, overcurrent shutdown will be triggered, as described
in the Overcurrent Protection section.
A small capacitor can be placed between the IOUT pin and
GND to reduce the noise impact. If this pin is not used, tie it to
GND.
Regardless of the VR being enabled or not, the ISL6326B
overvoltage protection (OVP) circuit will be active after its
POR. The OVP thresholds are different under different
operation conditions. When VR is not enabled and during the
soft-start intervals TD1, TD2 and TD3, the OVP threshold is
1.275V. Once the controller detects valid VID input, the OVP
trip point will be changed to DAC plus 175mV.
Two actions are taken by the ISL6326B to protect the
microprocessor load when an overvoltage condition occurs.
At the inception of an overvoltage event, all PWM outputs are
commanded low instantly (less than 20ns). This causes the
Intersil drivers to turn on the lower MOSFETs and pull the
output voltage below a level to avoid damaging the load. When
the VDIFF voltage falls below the DAC plus 75mV, PWM
signals enter a high-impedance state. The Intersil drivers
respond to the high-impedance input by turning off both upper
and lower MOSFETs. If the overvoltage condition reoccurs, the
ISL6326B will again command the lower MOSFETs to turn on.
The ISL6326B will continue to protect the load in this fashion
as long as the overvoltage condition occurs.
Once an overvoltage condition is detected, normal PWM
operation ceases until the ISL6326B is reset. Cycling the
voltage on EN_PWR, EN_VTT or VCC below the POR-falling
Page 20 of 30
ISL6326B
threshold will reset the controller. Cycling the VID codes will
not reset the controller.
VR_RDY
fault remains, the trip-retry cycles will continue indefinitely (as
shown in Figure 10) until either controller is disabled or the
fault is cleared. Note that the energy delivered during trip-retry
cycling is much less than during full-load operation, so there is
no thermal hazard during this kind of operation.
-
+
UV
OUTPUT CURRENT
50%
DAC
SOFT-START, FAULT
AND CONTROL LOGIC
+
VDIFF
OV
-
OC
-
+
OC
-
+
85µA
IAVG
0A
2.0V
OUTPUT VOLTAGE
IOUT
VID + 0.175V
FIGURE 9. VR_RDY AND PROTECTION CIRCUITRY
0V
2ms/DIV
FIGURE 10. OVERCURRENT BEHAVIOR IN HICCUP MODE.
FSW = 500kHz
Overcurrent Protection
ISL6326B has two levels of overcurrent protection. Each phase
is protected from a sustained overcurrent condition by limiting
its peak current, while the combined phase currents are
protected on an instantaneous basis.
In instantaneous protection mode, ISL6326B utilizes the
sensed average current IAVG to detect an overcurrent
condition. See the Channel-Current Balance section for more
detail on how the average current is measured. The average
current is continually compared with a constant 85µA reference
current, as shown in Figure 9. Once the average current
exceeds the reference current, a comparator triggers the
converter to shutdown.
The current out of IOUT pin is equal to the sensed average
current IAVG. With a resistor from IOUT to GND, the voltage at
IOUT will be proportional to the sensed average current and
the resistor value. ISL6326B continuously monitors the voltage
at IOUT pin. If the voltage at IOUT pin is higher than 2V, a
comparator triggers the overcurrent shutdown. By increasing
the resistor between IOUT and GND, the overcurrent
protection threshold can be adjusted to be less than 100µA.
For example, the overcurrent threshold for the sensed average
current IAVG can be set to 80µA by using a 25k resistor from
IOUT to GND.
At the beginning of overcurrent shutdown, the controller places
all PWM signals in a high-impedance state within 20ns,
commanding the Intersil MOSFET driver ICs to turn off both
upper and lower MOSFETs. The system remains in this state a
period of 4096 switching cycles. If the controller is still enabled
at the end of this wait period, it will attempt a soft-start. If the
FN9286 Rev 0.00
Apr 26, 2006
For the individual channel overcurrent protection, the
ISL6326B continuously compares the sensed current signal of
each channel with the 120µA reference current. If one channel
current exceeds the reference current, ISL6326B will pull PWM
signal of this channel to low for the rest of the switching cycle.
This PWM signal can be turned on next cycle if the sensed
channel current is less than the 120µA reference current. The
peak current limit of individual channel will not trigger the
converter to shutdown.
Thermal Monitoring (VR_HOT/VR_FAN)
There are two thermal signals to indicate the temperature
status of the voltage regulator: VR_HOT and VR_FAN. Both
VR_FAN and VR_HOT pins are open-drain outputs, and
external pull-up resistors are required. Those signals are valid
only after the controller is enabled.
The VR_FAN signal indicates that the temperature of the
voltage regulator is high and more cooling airflow is needed.
The VR_HOT signal can be used to inform the system that the
temperature of the voltage regulator is too high and the CPU
should reduce its power consumption. The VR_HOT signal
may be tied to the CPU’s PROC_HOT signal.
The diagram of thermal monitoring function block is shown in
Figure 11. One NTC resistor should be placed close to the
power stage of the voltage regulator to sense the operational
temperature, and one pull-up resistor is needed to form the
voltage divider for the TM pin. As the temperature of the power
stage increases, the resistance of the NTC will reduce,
resulting in the reduced voltage at the TM pin. Figure 12 shows
Page 21 of 30
ISL6326B
the TM voltage over the temperature for a typical design with a
recommended 6.8k NTC (P/N: NTHS0805N02N6801 from
Vishay) and 1k resistor RTM1. We recommend using those
resistors for the accurate temperature compensation.
There are two comparators with hysteresis to compare the TM
pin voltage to the fixed thresholds for VR_FAN and VR_HOT
signals respectively. The VR_FAN signal is set to high when
the TM voltage is lower than 33% of VCC voltage, and is pulled
to GND when the TM voltage increases to above 39% of VCC
voltage. The VR_FAN signal is set to high when the TM voltage
goes below 28% of VCC voltage, and is pulled to GND when
the TM voltage goes back to above 33% of VCC voltage.
Figure 13 shows the operation of those signals.
TM
0.39*Vcc
0.33*Vcc
0.28*Vcc
VR_FAN
VR_HOT
Temperature
T1
T2
T3
FIGURE 13. VR_HOT AND VR_FAN SIGNAL vs TM VOLTAGE
Based on the NTC temperature characteristics and the desired
threshold of the VR_HOT signal, the pull-up resistor RTM1 of
TM pin is given by:
VCC
VR_FAN
RTM1
oc
VR_HOT
RNTC
0.28VCC
FIGURE 11. BLOCK DIAGRAM OF THERMAL MONITORING
FUNCTION
The NTC resistance at the set point T2 and release point T1 of
VR_FAN signal can be calculated as:
R NTC  T2  = 1.267xR NTC  T3 
(EQ. 19)
R NTC  T1  = 1.644xR NTC  T3 
(EQ. 20)
With the NTC resistance value obtained from Equations 19 and
20, the temperature value T2 and T1 can be found from the
NTC datasheet.
V TM / V CC vs. Tem perature
100%
V TM / V CC
(EQ. 18)
RNTC(T3) is the NTC resistance at the VR_HOT threshold
temperature T3.
0.33VCC
TM
R TM1 = 2.75xR NTC  T3 
90%
Temperature Compensation
80%
ISL6326B supports inductor DCR sensing, or resistive sensing
techniques. The inductor DCR has a positive temperature
coefficient, which is about +0.38%/°C. Since the voltage across
inductor is sensed for the output current information, the
sensed current has the same positive temperature coefficient
as the inductor DCR.
70%
60%
50%
40%
30%
20%
0
20
40
60
80
100
Tem perature ( oC)
120
140
FIGURE 12. THE RATIO OF TM VOLTAGE TO NTC
TEMPERATURE WITH RECOMMENDED PARTS
FN9286 Rev 0.00
Apr 26, 2006
In order to obtain the correct current information, there should
be a way to correct the temperature impact on the current
sense component. ISL6326B provides two methods: integrated
temperature compensation and external temperature
compensation.
Integrated Temperature Compensation
When the TCOMP voltage is equal or greater than VCC/15,
ISL6326B will utilize the voltage at TM and TCOMP pins to
compensate the temperature impact on the sensed current.
The block diagram of this function is shown in Figure 14.
Page 22 of 30
ISL6326B
VCC
RTM1
TM
oc
Isen4
Isen3
Channel current
sense
Non-linear
A/D
Isen1
I4
RNTC
D/A
VCC
Isen2
I3
I2
I1
4-bit
A/D
Design Procedure
1. Properly choose the voltage divider for the TM pin to match
the TM voltage vs temperature curve with the
recommended curve in Figure 12.
2. Run the actual board under the full load and the desired
cooling condition.
ki
3. After the board reaches the thermal steady state, record the
temperature (TCSC) of the current sense component
(inductor or MOSFET) and the voltage at TM and VCC pins.
RTC1
TCOMP
ISL6326B multiplexes the TCOMP factor N with the TM digital
signal to obtain the adjustment gain to compensate the
temperature impact on the sensed channel current. The
compensated channel current signal is used for droop and
overcurrent protection functions.
Droop &
Over current protection
RTC2
4. Use the following equation to calculate the resistance of the
TM NTC, and find out the corresponding NTC temperature
TNTC from the NTC datasheet.
R NTC  T
FIGURE 14. BLOCK DIAGRAM OF INTEGRATED
TEMPERATURE COMPENSATION
When the TM NTC is placed close to the current sense
component (inductor), the temperature of the NTC will track the
temperature of the current sense component. Therefore the
TM voltage can be utilized to obtain the temperature of the
current sense component.
Based on VCC voltage, ISL6326B converts the TM pin voltage
to a 6-bit TM digital signal for temperature compensation. With
the non-linear A/D converter of ISL6326B, the TM digital signal
is linearly proportional to the NTC temperature. For accurate
temperature compensation, the ratio of the TM voltage to the
NTC temperature of the practical design should be similar to
that in Figure 12.
Depending on the location of the NTC and the airflow, the NTC
may be cooler or hotter than the current sense component.
The TCOMP pin voltage can be utilized to correct the
temperature difference between NTC and the current sense
component. When a different NTC type or different voltage
divider is used for the TM function, the TCOMP voltage can
also be used to compensate for the difference between the
recommended TM voltage curve in Figure 13 and that of the
actual design. According to the VCC voltage, ISL6326B
converts the TCOMP pin voltage to a 4-bit TCOMP digital
signal as TCOMP factor N.
The TCOMP factor N is an integer between 0 and 15. The
integrated temperature compensation function is disabled for N
= 0. For N = 4, the NTC temperature is equal to the
temperature of the current sense component. For N < 4, the
NTC is hotter than the current sense component. The NTC is
cooler than the current sense component for N > 4. When
N > 4, the larger TCOMP factor N, the larger the difference
between the NTC temperature and the temperature of the
current sense component.
FN9286 Rev 0.00
Apr 26, 2006
V TM xR
TM1
= ------------------------------
V CC – V
NTC
TM
(EQ. 21)
5. Use the following equation to calculate the TCOMP
factor N:
209x  T CSC – T

NTC
N = -------------------------------------------------------- + 4
3xTNTC + 400
(EQ. 22)
6. Choose an integral number close to the above result for the
TCOMP factor. If this factor is higher than 15, use N = 15. If
it is less than 1, use N = 1.
7. Choose the pull-up resistor RTC1 (typical 10k);
8. If N = 15, do not need the pull-down resistor RTC2,
otherwise obtain RTC2 by the following equation:
NxR TC1
R TC2 = ----------------------15 – N
(EQ. 23)
9. Run the actual board under full load again with the proper
resistors connected to the TCOMP pin.
10. Record the output voltage as V1 immediately after the
output voltage is stable with the full load. Record the output
voltage as V2 after the VR reaches the thermal steady
state.
11. If the output voltage increases over 2mV as the temperature
increases, i.e. V2-V1 > 2mV, reduce N and redesign RTC2;
if the output voltage decreases over 2mV as the
temperature increases, i.e. V1-V2 > 2mV, increase N and
redesign RTC2.
External Temperature Compensation
By pulling the TCOMP pin to GND, the integrated temperature
compensation function is disabled. And one external
temperature compensation network, shown in Figure 15, can
be used to cancel the temperature impact on the droop (i.e.,
load line).
Page 23 of 30
ISL6326B
MOSFETs
COMP
ISL6326B
Internal
circuit
The choice of MOSFETs depends on the current each
MOSFET will be required to conduct; the switching frequency;
the capability of the MOSFETs to dissipate heat; and the
availability and nature of heat sinking and air flow.
FB
o
C
LOWER MOSFET POWER CALCULATION
ISEN
VDIFF
FIGURE 15. EXTERNAL TEMPERATURE COMPENSATION
The sensed current will flow out of the FB pin and develop a
droop voltage across the resistor equivalent (RFB) between the
FB and VDIFF pins. If RFB resistance reduces as the
temperature increases, the temperature impact on the droop
can be compensated. An NTC resistor can be placed close to
the power stage and used to form RFB. Due to the non-linear
temperature characteristics of the NTC, a resistor network is
needed to make the equivalent resistance between the FB and
VDIFF pins reverse proportional to the temperature.
The external temperature compensation network can only
compensate the temperature impact on the droop, while it has
no impact to the sensed current inside ISL6326B. Therefore,
this network cannot compensate for the temperature impact on
the overcurrent protection function.
General Design Guide
This design guide is intended to provide a high-level explanation
of the steps necessary to create a multiphase power converter. It
is assumed that the reader is familiar with many of the basic
skills and techniques referenced below. In addition to this guide,
Intersil provides complete reference designs that include
schematics, bills of materials, and example board layouts for all
common microprocessor applications.
Power Stages
The first step in designing a multiphase converter is to
determine the number of phases. This determination depends
heavily on the cost analysis which in turn depends on system
constraints that differ from one design to the next. Principally,
the designer will be concerned with whether components can
be mounted on both sides of the circuit board; whether
through-hole components are permitted; and the total board
space available for power-supply circuitry. Generally speaking,
the most economical solutions are those in which each phase
handles between 15 and 20A. All surface-mount designs will
tend toward the lower end of this current range. If through-hole
MOSFETs and inductors can be used, higher per-phase
currents are possible. In cases where board space is the
limiting constraint, current can be pushed as high as 40A per
phase, but these designs require heat sinks and forced air to
cool the MOSFETs, inductors and heat-dissipating surfaces.
FN9286 Rev 0.00
Apr 26, 2006
The calculation for heat dissipated in the lower MOSFET is
simple, since virtually all of the heat loss in the lower MOSFET
is due to current conducted through the channel resistance
(RDS(ON)). In Equation 24, IM is the maximum continuous
output current; IPP is the peak-to-peak inductor current (see
Equation 1); d is the duty cycle (VOUT/VIN); and L is the perchannel inductance.
I L, 2PP  1 – d 
 I M 2
P LOW 1 = r DS  ON   -----  1 – d  + -------------------------------12
 N
(EQ. 24)
An additional term can be added to the lower-MOSFET loss
equation to account for additional loss accrued during the dead
time when inductor current is flowing through the lowerMOSFET body diode. This term is dependent on the diode
forward voltage at IM, VD(ON); the switching frequency, fS; and
the length of dead times, td1 and td2, at the beginning and the
end of the lower-MOSFET conduction interval respectively.
I

I M I PP
M I-------P LOW 2 = V D  ON  f S  ----- t d1 +  ----- – PP- t d2
 N- + -------2 
2 
N
(EQ. 25)
Thus the total maximum power dissipated in each lower
MOSFET is approximated by the summation of PLOW,1 and
PLOW,2.
Upper MOSFET Power Calculation
In addition to RDS(ON) losses, a large portion of the upperMOSFET losses are due to currents conducted across the
input voltage (VIN) during switching. Since a substantially
higher portion of the upper-MOSFET losses are dependent on
switching frequency, the power calculation is more complex.
Upper MOSFET losses can be divided into separate
components involving the upper-MOSFET switching times; the
lower-MOSFET body-diode reverse-recovery charge, Qrr; and
the upper MOSFET RDS(ON) conduction loss.
When the upper MOSFET turns off, the lower MOSFET does
not conduct any portion of the inductor current until the voltage
at the phase node falls below ground. Once the lower
MOSFET begins conducting, the current in the upper MOSFET
falls to zero as the current in the lower MOSFET ramps up to
assume the full inductor current. In Equation 26, the required
time for this commutation is t1 and the approximated
associated power loss is PUP,1.
I M I PP  t 1 
P UP,1  V IN  -----  ----  f
 N- + -------2  2 S
(EQ. 26)
Page 24 of 30
ISL6326B
At turn on, the upper MOSFET begins to conduct and this
transition occurs over a time t2. In Equation 27, the
approximate power loss is PUP,2.
 I M I PP  t 2 
P UP, 2  V IN  ----- – ---------  ----  f S
2  2
N
(EQ. 27)
A third component involves the lower MOSFET’s reverserecovery charge, Qrr. Since the inductor current has fully
commutated to the upper MOSFET before the lowerMOSFET’s body diode can draw all of Qrr, it is conducted
through the upper MOSFET across VIN. The power dissipated
as a result is PUP,3 and is approximately
P UP,3 = V IN Q rr f S
(EQ. 28)
Finally, the resistive part of the upper MOSFET’s is given in
Equation 29 as PUP,4.
The total power dissipated by the upper MOSFET at full load
can now be approximated as the summation of the results from
Equations 26, 27, and 28. Since the power equations depend
on MOSFET parameters, choosing the correct MOSFETs can
be an iterative process involving repetitive solutions to the loss
equations for different MOSFETs and different switching
frequencies.
2
I PP2
 I M
P UP,4  r DS  ON   ----- d + ---------- d
12
 N
(EQ. 29)
The resistors connected to the Isen+ pins determine the gains
in the load-line regulation loop and the channel-current
balance loop as well as setting the overcurrent trip point.
Select values for these resistors by the following equation:
(EQ. 30)
where RISEN is the sense resistor connected to the ISEN+ pin,
N is the active channel number, RX is the resistance of the
current sense element, either the DCR of the inductor or
RSENSE depending on the sensing method, and IOCP is the
desired overcurrent trip point. Typically, IOCP can be chosen to
be 1.3 times the maximum load current of the specific
application.
With integrated temperature compensation, the sensed current
signal is independent on the operational temperature of the
power stage, i.e. the temperature effect on the current sense
element RX is cancelled by the integrated temperature
compensation function. RX in Equation 30 should be the
resistance of the current sense element at the room
temperature.
When the integrated temperature compensation function is
disabled by pulling the TCOMP pin to GND, the sensed current
will be dependent on the operational temperature of the power
stage, since the DC resistance of the current sense element
FN9286 Rev 0.00
Apr 26, 2006
In certain circumstances, it may be necessary to adjust the
value of one or more ISEN resistors. When the components of
one or more channels are inhibited from effectively dissipating
their heat so that the affected channels run hotter than desired,
choose new, smaller values of RISEN for the affected phases
(see the section entitled Channel-Current Balance). Choose
RISEN,2 in proportion to the desired decrease in temperature
rise in order to cause proportionally less current to flow in the
hotter phase:
T
R ISEN ,2 = R ISEN ----------2
T 1
(EQ. 31)
In Equation 31, make sure that T2 is the desired temperature
rise above the ambient temperature, and T1 is the measured
temperature rise above the ambient temperature. While a single
adjustment according to Equation 31 is usually sufficient, it may
occasionally be necessary to adjust RISEN two or more times to
achieve optimal thermal balance between all channels.
Load-Line Regulation Resistor
The load-line regulation resistor is labelled RFB in Figure 5. Its
value depends on the desired loadline requirement of the
application.
The desired loadline can be calculated by the following
equation:
Current Sensing Resistor
RX
I OCP
R ISEN = ---------------------- ------------–6 N
85 10
may be changed according to the operational temperature. RX
in Equation 30 should be the maximum DC resistance of the
current sense element at the all operational temperature.
V DROOP
R LL = -----------------------I FL
(EQ. 32)
where IFL is the full load current of the specific application, and
VRDROOP is the desired voltage droop under the full load
condition.
Based on the desired loadline RLL, the loadline regulation
resistor can be calculated by the following equation:
NR
R
ISEN LL
R FB = --------------------------------RX
(EQ. 33)
where N is the active channel number, RISEN is the sense
resistor connected to the ISEN+ pin, and RX is the resistance
of the current sense element, either the DCR of the inductor or
RSENSE depending on the sensing method.
If one or more of the current sense resistors are adjusted for
thermal balance, as in Equation 31, the load-line regulation
resistor should be selected based on the average value of the
current sensing resistors, as given in the following equation:
R LL
R FB = ---------RX
 RISEN  n 
(EQ. 34)
n
where RISEN(n) is the current sensing resistor connected to the
nth ISEN+ pin.
Page 25 of 30
ISL6326B
Compensation
The two opposing goals of compensating the voltage regulator
are stability and speed. Depending on whether the regulator
employs the optional load-line regulation as described in LoadLine Regulation, there are two distinct methods for achieving
these goals.
follow, there is a separate set of equations for the
compensation components.
Case 1:
2f 0 V pp LC
R C = R FB ----------------------------------0.75V
IN
COMPENSATING LOAD-LINE REGULATED CONVERTER
The load-line regulated converter behaves in a similar manner
to a peak-current mode controller because the two poles at the
output-filter L-C resonant frequency split with the introduction
of current information into the control loop. The final location of
these poles is determined by the system function, the gain of
the current signal, and the value of the compensation
components, RC and CC.
Since the system poles and zero are affected by the values of
the components that are meant to compensate them, the
solution to the system equation becomes fairly complicated.
Fortunately there is a simple approximation that comes very
close to an optimal solution. Treating the system as though it
were a voltage-mode regulator by compensating the L-C poles
and the ESR zero of the voltage-mode approximation yields a
solution that is always stable with very close to ideal transient
performance.
C2 (OPTIONAL)
CC
COMP
FB
+
RFB
VDROOP
VDIFF
FIGURE 16. COMPENSATION CONFIGURATION FOR
LOAD-LINE REGULATED ISL6326B CIRCUIT
The feedback resistor, RFB, has already been chosen as
outlined in Load-Line Regulation Resistor. Select a target
bandwidth for the compensated system, f0. The target
bandwidth must be large enough to assure adequate transient
performance, but smaller than 1/3 of the per-channel switching
frequency. The values of the compensation components
depend on the relationships of f0 to the L-C pole frequency and
the ESR zero frequency. For each of the three cases which
FN9286 Rev 0.00
Apr 26, 2006
0.75V IN
C C = ----------------------------------2V PP R FB f 0
Case 2:
1
1
-------------------  f 0 < ----------------------------2C  ESR 
2 LC
V PP  2  2 f 02 LC
R C = R FB -------------------------------------------0.75 V IN
(EQ. 35)
0.75V IN
C C = ----------------------------------------------------------- 2  2 f 02 V PP R FB LC
Case 3:
1
f 0 > -----------------------------2C  ESR 
2 f 0 V pp L
R C = R FB ----------------------------------------0.75 V IN  ESR 
0.75V IN  ESR  C
C C = -----------------------------------------------2V PP R FB f 0 L
In Equation 35, L is the per-channel filter inductance divided by
the number of active channels; C is the sum total of all output
capacitors; ESR is the equivalent-series resistance of the bulk
output-filter capacitance; and VPP is the sawtooth amplitude
described in Electrical Specifications.
ISL6326B
RC
1
------------------- > f 0
2 LC
The optional capacitor C2, is sometimes needed to bypass
noise away from the PWM comparator. Keep a position
available for C2, and be prepared to install a high-frequency
capacitor of between 22pF and 150pF in case any leadingedge jitter problem is noted.
Once selected, the compensation values in Equation 35
assure a stable converter with reasonable transient
performance. In most cases, transient performance can be
improved by making adjustments to RC. Slowly increase the
value of RC while observing the transient performance on an
oscilloscope until no further improvement is noted. Normally,
CC will not need adjustment. Keep the value of CC from
Equation 35 unless some performance issue is noted.
Output Filter Design
The output inductors and the output capacitor bank together to
form a low-pass filter responsible for smoothing the pulsating
voltage at the phase nodes. The output filter also must provide
the transient energy until the regulator can respond. Because it
has a low bandwidth compared to the switching frequency, the
output filter necessarily limits the system transient response.
The output capacitor must supply or sink load current while the
current in the output inductors increases or decreases to meet
the demand.
Page 26 of 30
ISL6326B
In high-speed converters, the output capacitor bank is usually
the most costly (and often the largest) part of the circuit. Output
filter design begins with minimizing the cost of this part of the
circuit. The critical load parameters in choosing the output
capacitors are the maximum size of the load step, I; the loadcurrent slew rate, di/dt; and the maximum allowable outputvoltage deviation under transient loading, VMAX. Capacitors
are characterized according to their capacitance, ESR, and
ESL (equivalent series inductance).
At the beginning of the load transient, the output capacitors
supply all of the transient current. The output voltage will
initially deviate by an amount approximated by the voltage drop
across the ESL. As the load current increases, the voltage
drop across the ESR increases linearly until the load current
reaches its final value. The capacitors selected must have
sufficiently low ESL and ESR so that the total output-voltage
deviation is less than the allowable maximum. Neglecting the
contribution of inductor current and regulator response, the
output voltage initially deviates by an amount:
di
V   ESL  ----- +  ESR  I
dt
(EQ. 36)
The filter capacitor must have sufficiently low ESL and ESR so
that V < VMAX.
Most capacitor solutions rely on a mixture of high-frequency
capacitors with relatively low capacitance in combination with
bulk capacitors having high capacitance but limited highfrequency performance. Minimizing the ESL of the highfrequency capacitors allows them to support the output voltage
as the current increases. Minimizing the ESR of the bulk
capacitors allows them to supply the increased current with
less output voltage deviation.
The ESR of the bulk capacitors also creates the majority of the
output-voltage ripple. As the bulk capacitors sink and source
the inductor AC ripple current (see Interleaving and Equation
2), a voltage develops across the bulk-capacitor ESR equal to
IC,PP (ESR). Thus, once the output capacitors are selected,
the maximum allowable ripple voltage, VPP(MAX), determines
the lower limit on the inductance.
V – N V

OUT V OUT
 IN
L   ESR  -----------------------------------------------------------f S V IN V PP MAX 
than 50%. Nevertheless, both inequalities should be
evaluated, and L should be selected based on the lower of the
two results. In each equation, L is the per-channel inductance,
C is the total output capacitance, and N is the number of active
channels.
2NCVO
L  -------------------- V MAX – I  ESR 
 I  2
(EQ. 38)
 1.25  NC
L  -------------------------- V MAX – I  ESR   V IN – V O


 I  2
(EQ. 39)
Input Supply Voltage Selection
The VCC input of the ISL6326B can be connected either
directly to a +5V supply or through a current limiting resistor to
a +12V supply. An integrated 5.8V shunt regulator maintains
the voltage on the VCC pin when a +12V supply is used. A
300 resistor is suggested for limiting the current into the VCC
pin to a worst-case maximum of approximately 25mA.
Switching Frequency Selection
There are a number of variables to consider when choosing
the switching frequency, as there are considerable effects on
the upper-MOSFET loss calculation. These effects are outlined
in MOSFETs, and they establish the upper limit for the
switching frequency. The lower limit is established by the
requirement for fast transient response and small outputvoltage ripple as outlined in Output Filter Design. Choose the
lowest switching frequency that allows the regulator to meet
the transient-response requirements.
Input Capacitor Selection
The input capacitors are responsible for sourcing the AC
component of the input current flowing into the upper
MOSFETs. Their RMS current capacity must be sufficient to
handle the AC component of the current drawn by the upper
MOSFETs which is related to duty cycle and the number of
active phases.
(EQ. 37)
Since the capacitors are supplying a decreasing portion of the
load current while the regulator recovers from the transient, the
capacitor voltage becomes slightly depleted. The output
inductors must be capable of assuming the entire load current
before the output voltage decreases more than VMAX. This
places an upper limit on inductance.
Equation 38 gives the upper limit on L for the cases when the
trailing edge of the current transient causes a greater outputvoltage deviation than the leading edge. Equation 39
addresses the leading edge. Normally, the trailing edge
dictates the selection of L because duty cycles are usually less
FN9286 Rev 0.00
Apr 26, 2006
Page 27 of 30
ISL6326B
current slew rates produced by the upper MOSFETs turn on
and off. Select low ESL ceramic capacitors and place one as
close as possible to each upper MOSFET drain to minimize
board parasitic impedances and maximize suppression.
0.2
0.3
0.1
IL,PP = 0
IL,PP = 0.5 IO
IL,PP = 0.75 IO
0
0
0.2
0.4
0.6
0.8
1.0
DUTY CYCLE (VO/VIN)
FIGURE 17. NORMALIZED INPUT-CAPACITOR RMS CURRENT
vs DUTY CYCLE FOR 2-PHASE CONVERTER
INPUT-CAPACITOR CURRENT (IRMS/IO)
INPUT-CAPACITOR CURRENT (IRMS/IO)
0.3
INPUT-CAPACITOR CURRENT (IRMS/IO)
IL,PP = 0
IL,PP = 0.5 IO
IL,PP = 0.25 IO
IL,PP = 0.75 IO
0.1
0
0.2
0.4
0.6
0.8
1.0
DUTY CYCLE (VO/VIN)
FIGURE 19. NORMALIZED INPUT-CAPACITOR RMS CURRENT
vs DUTY CYCLE FOR 4-PHASE CONVERTER
0.2
MULTIPHASE RMS IMPROVEMENT
0.1
0
IL,PP = 0.5 IO
IL,PP = 0.75 IO
0.2
0
0.3
IL,PP = 0
IL,PP = 0.25 IO
0
0.2
0.4
0.6
0.8
1.0
DUTY CYCLE (VO/VIN)
FIGURE 18. NORMALIZED INPUT-CAPACITOR RMS CURRENT
vs DUTY CYCLE FOR 3-PHASE CONVERTER
For a two phase design, use Figure 17 to determine the inputcapacitor RMS current requirement given the duty cycle,
maximum sustained output current (IO), and the ratio of the
per-phase peak-to-peak inductor current (IL,PP) to IO. Select a
bulk capacitor with a ripple current rating which will minimize
the total number of input capacitors required to support the
RMS current calculated. The voltage rating of the capacitors
should also be at least 1.25 times greater than the maximum
input voltage.
Figure 20 is provided as a reference to demonstrate the
dramatic reductions in input-capacitor RMS current upon the
implementation of the multiphase topology. For example,
compare the input RMS current requirements of a two-phase
converter versus that of a single phase. Assume both
converters have a duty cycle of 0.25, maximum sustained
output current of 40A, and a ratio of IL,PP to IO of 0.5. The
single phase converter would require 17.3Arms current
capacity while the two-phase converter would only require
10.9Arms. The advantages become even more pronounced
when output current is increased and additional phases are
added to keep the component cost down relative to the single
phase approach.
Figures 18 and 19 provide the same input RMS current
information for three and four phase designs respectively. Use
the same approach to selecting the bulk capacitor type and
number as described above.
Low capacitance, high-frequency ceramic capacitors are
needed in addition to the bulk capacitors to suppress leading
and falling edge voltage spikes. The result from the high
FN9286 Rev 0.00
Apr 26, 2006
Page 28 of 30
ISL6326B
Layout Considerations
INPUT-CAPACITOR CURRENT (IRMS/IO)
0.6
The following layout strategies are intended to minimize the
impact of board parasitic impedances on converter performance
and to optimize the heat-dissipating capabilities of the printedcircuit board. These sections highlight some important practices
which should not be overlooked during the layout process.
0.4
Component Placement
0.2
IL,PP = 0
IL,PP = 0.5 IO
IL,PP = 0.75 IO
0
0
0.2
0.4
0.6
0.8
1.0
DUTY CYCLE (VO/VIN)
FIGURE 20. NORMALIZED INPUT-CAPACITOR RMS
CURRENT vs DUTY CYCLE FOR SINGLE-PHASE
CONVERTER
Within the allotted implementation area, orient the switching
components first. The switching components are the most
critical because they carry large amounts of energy and tend to
generate high levels of noise. Switching component placement
should take into account power dissipation. Align the output
inductors and MOSFETs such that space between the
components is minimized while creating the PHASE plane.
Place the Intersil MOSFET driver IC as close as possible to the
MOSFETs they control to reduce the parasitic impedances due
to trace length between critical driver input and output signals.
If possible, duplicate the same placement of these components
for each phase.
Next, place the input and output capacitors. Position one highfrequency ceramic input capacitor next to each upper
MOSFET drain. Place the bulk input capacitors as close to the
upper MOSFET drains as dictated by the component size and
dimensions. Long distances between input capacitors and
MOSFET drains result in too much trace inductance and a
reduction in capacitor performance. Locate the output
capacitors between the inductors and the load, while keeping
them in close proximity to the microprocessor socket.
© Copyright Intersil Americas LLC 2006. All Rights Reserved.
All trademarks and registered trademarks are the property of their respective owners.
For additional products, see www.intersil.com/en/products.html
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such
modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are
current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its
subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN9286 Rev 0.00
Apr 26, 2006
Page 29 of 30
ISL6326B
Quad Flat No-Lead Plastic Package (QFN)
Micro Lead Frame Plastic Package (MLFP)
2X
0.15 C A
D
A
9
40 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
(COMPLIANT TO JEDEC MO-220VJJD-2 ISSUE C)
MILLIMETERS
D/2
SYMBOL
MIN
NOMINAL
MAX
NOTES
A
0.80
0.90
1.00
-
D1/2
A1
-
-
0.05
-
A2
-
-
1.00
9
D1
2X
N
6
INDEX
AREA
L40.6x6
0.15 C B
A3
1
2
3
E1/2
E/2
E1
b
E
D2
0.15 C B
4X
B
TOP VIEW
0
A
/ / 0.10 C
0.08 C
SEATING PLANE
A1
A3
SIDE VIEW
9
5
NX b
0.10 M C A B
4X P
D2
(DATUM B)
8
7
NX k
D2
2 N
4X P
4.10
(Ne-1)Xe
REF.
E2
E2/2
N e
8
6.00 BSC
-
5.75 BSC
9
3.95
4.10
BOTTOM VIEW
k
0.25
-
-
-
L
0.30
0.40
0.50
8
L1
-
-
0.15
10
N
40
2
Nd
10
3
Ne
10
3
P
-
-
0.60
9

-
-
12
9
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
A1
7. Dimensions D2 and E2 are for the exposed pads which provide
improved electrical and thermal performance.
SECTION "C-C"
8. Nominal dimensions are provided to assist with PCB Land Pattern
Design efforts, see Intersil Technical Brief TB389.
C
L
10
L
e
L1
10
L
e
C C
TERMINAL TIP
FOR ODD TERMINAL/SIDE
FN9286 Rev 0.00
Apr 26, 2006
-
3. Nd and Ne refer to the number of terminals on each D and E.
5
L1
7, 8
2. N is the number of terminals.
8
NX b
C
L
4.25
0.50 BSC
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
9
CORNER
OPTION 4X
(Nd-1)Xe
REF.
7, 8
NOTES:
7
NX L
9
4.25
Rev. 1 10/02
2
3
6
INDEX
AREA
-
E
1
(DATUM A)
5, 8
5.75 BSC
3.95
e
C
0.30
E1
E2
A2
0.23
9
6.00 BSC
D1
9
0.15 C A
0.18
D
2X
2X
0.20 REF
9. Features and dimensions A2, A3, D1, E1, P &  are present when
Anvil singulation method is used and not present for saw
singulation.
10. Depending on the method of lead termination at the edge of the
package, a maximum 0.15mm pull back (L1) maybe present. L
minus L1 to be equal to or greater than 0.3mm.
FOR EVEN TERMINAL/SIDE
Page 30 of 30
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