MJD44H11 MJD45H11 COMPLEMENTARY SILICON PNP TRANSISTORS ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED APPLICATIONS ■ GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIER 3 1 DESCRIPTION The MJD44H11 is a silicon multiepitaxial planar NPN transistors mounted in DPAK plastic package. It is inteded for various switching and general purpose applications. The complementary PNP type is MJD45H11. DPAK (TO-252) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN MJD44H11 PNP MJD45H11 Uni t V CEO Collector-Emitter Voltage (I B = 0) 80 V V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 8 A Collector Peak Current 16 A IC I CM o P t ot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj Max. O perating Junction Temperature 20 W -55 to 150 o C 150 o C For PNP types the values are intented negative. July 1997 1/5 MJD44H11 / MJD45H11 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 6.25 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter V CEO(sus )∗ Collector-Emitter Sustaining Voltage Test Cond ition s I C = 30 mA Min. Typ . Max. 80 Un it V I CES Collector Cut-off Current V CB = rated V CEO V BE = 0 10 µA I EBO Emitter Cut-off Current V EB = 5V 50 µA V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 8 A I B = 0.4 A 1 V V BE(s at)∗ Base-Emitter Saturation Voltage IC = 8 A I B = 0.8 A 1.5 V DC Current G ain IC = 2 A IC = 4 A V CE = 1 V V CE = 1 V h FE∗ ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % ∗ For PNP types the values are intented negative. Safe Operating Area 2/5 Derating Curves 60 40 MJD44H11 / MJD45H11 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) 3/5 MJD44H11 / MJD45H11 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = 1 = G 2 = = = E = B2 3 B DETAIL ”A” L4 0068772-B 4/5 MJD44H11 / MJD45H11 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5