Freescale MPC8313EZQAFFA Powerquiccâ ¢ ii pro processor hardware specification Datasheet

Freescale Semiconductor
Technical Data
Document Number: MPC8313EEC
Rev. 2.1, 12/2008
MPC8313E
PowerQUICC™ II Pro Processor
Hardware Specifications
This document provides an overview of the MPC8313E
PowerQUICC™ II Pro processor features, including a block
diagram showing the major functional components. The
MPC8313E is a cost-effective, low-power, highly integrated
host processor that addresses the requirements of several
printing and imaging, consumer, and industrial applications,
including main CPUs and I/O processors in printing systems,
networking switches and line cards, wireless LANs
(WLANs), network access servers (NAS), VPN routers,
intelligent NIC, and industrial controllers. The MPC8313E
extends the PowerQUICC™ family, adding higher CPU
performance, additional functionality, and faster interfaces
while addressing the requirements related to time-to-market,
price, power consumption, and package size.
NOTE
The information in this document is accurate for
revisions 1.0, 2.x, and later. See Section 24.1, “Part
Numbers Fully Addressed by this Document.”
© Freescale Semiconductor, Inc., 2007, 2008. All rights reserved.
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Contents
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . 6
Power Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 10
Clock Input Timing . . . . . . . . . . . . . . . . . . . . . . . . . . 12
RESET Initialization . . . . . . . . . . . . . . . . . . . . . . . . . 13
DDR and DDR2 SDRAM . . . . . . . . . . . . . . . . . . . . . 14
DUART . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Ethernet: Three-Speed Ethernet, MII Management . 21
High-Speed Serial Interfaces (HSSI) . . . . . . . . . . . . 36
USB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Enhanced Local Bus . . . . . . . . . . . . . . . . . . . . . . . . . 47
JTAG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
I2C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
PCI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Timers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
GPIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
IPIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
SPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Package and Pin Listings . . . . . . . . . . . . . . . . . . . . . 63
Clocking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Thermal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
System Design Information . . . . . . . . . . . . . . . . . . . 88
Document Revision History . . . . . . . . . . . . . . . . . . . 94
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . 97
Overview
1
Overview
The MPC8313E incorporates the e300c3 core, which includes 16 Kbytes of L1 instruction and data caches
and on-chip memory management units (MMUs). The MPC8313E has interfaces to dual enhanced
three-speed 10/100/1000 Mbps Ethernet controllers, a DDR1/DDR2 SDRAM memory controller, an
enhanced local bus controller, a 32-bit PCI controller, a dedicated security engine, a USB 2.0 dual-role
controller and an on-chip full-speed PHY, a programmable interrupt controller, dual I2C controllers, a
4-channel DMA controller, and a general-purpose I/O port. A block diagram of the MPC8313E is shown
in Figure 1.
e300c3 Core w/FPU and
Power Management
DUART
Dual I2C
Timers
GPIO
Interrupt
Controller
I/O Sequencer
(IOS)
16-KB
I-Cache
Security Engine 2.2
16-KB
D-Cache
USB 2.0
Host/Device/OTG
ULPI
PCI
DMA
Local Bus,
SPI
Gb Ethernet
MAC
DDR1/DDR2
Controller
Gb Ethernet
MAC
On-Chip
FS PHY
Note: The MPC8313 does not include a security engine.
Figure 1. MPC8313E Block Diagram
The MPC8313E security engine (SEC 2.2) allows CPU-intensive cryptographic operations to be offloaded
from the main CPU core. The security-processing accelerator provides hardware acceleration for the DES,
3DES, AES, SHA-1, and MD-5 algorithms.
1.1
MPC8313E Features
The following features are supported in the MPC8313E:
• Embedded PowerPC™ e300 processor core built on Power Architecture™ technology; operates at
up to 333 MHz.
• High-performance, low-power, and cost-effective host processor
• DDR1/DDR2 memory controller—one 16-/32-bit interface at up to 333 MHz supporting both
DDR1 and DDR2
• 16-Kbyte instruction cache and 16-Kbyte data cache, a floating point unit, and two integer units
• Peripheral interfaces such as 32-bit PCI interface with up to 66-MHz operation, 16-bit enhanced
local bus interface with up to 66-MHz operation, and USB 2.0 (full speed) with an on-chip PHY.
• Security engine provides acceleration for control and data plane security protocols
• Power management controller for low-power consumption
• High degree of software compatibility with previous-generation PowerQUICC processor-based
designs for backward compatibility and easier software migration
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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Overview
1.2
Serial Interfaces
The following interfaces are supported in the MPC8313E: dual UART, dual I2C, and an SPI interface
1.3
Security Engine
The security engine is optimized to handle all the algorithms associated with IPSec, IEEE Std 802.11i®,
and iSCSI. The security engine contains one crypto-channel, a controller, and a set of crypto execution
units (EUs). The execution units are as follows:
• Data encryption standard execution unit (DEU), supporting DES and 3DES
• Advanced encryption standard unit (AESU), supporting AES
• Message digest execution unit (MDEU), supporting MD5, SHA1, SHA-224, SHA-256, and
HMAC with any algorithm
• One crypto-channel supporting multi-command descriptor chains
1.4
DDR Memory Controller
The MPC8313E DDR1/DDR2 memory controller includes the following features:
• Single 16- or 32-bit interface supporting both DDR1 and DDR2 SDRAM
• Support for up to 333 MHz
• Support for two physical banks (chip selects), each bank independently addressable
• 64-Mbit to 1-Gbit devices with x8/x16/x32 data ports (no direct x4 support)
• Support for one 16-bit device or two 8-bit devices on a 16-bit bus, or one 32-bit device or two
16-bit devices on a 32-bit bus
• Support for up to 16 simultaneous open pages
• Supports auto refresh
• On-the-fly power management using CKE
• 1.8-/2.5-V SSTL2 compatible I/O
1.5
PCI Controller
The MPC8313E PCI controller includes the following features:
• PCI specification revision 2.3 compatible
• Single 32-bit data PCI interface operates at up to 66 MHz
• PCI 3.3-V compatible (not 5-V compatible)
• Support for host and agent modes
• On-chip arbitration, supporting three external masters on PCI
• Selectable hardware-enforced coherency
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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3
Overview
1.6
USB Dual-Role Controller
The MPC8313E USB controller includes the following features:
• Supports USB on-the-go mode, which includes both device and host functionality, when using an
external ULPI (UTMI + low-pin interface) PHY
• Compatible with Universal Serial Bus Specification, Rev. 2.0
• Supports operation as a stand-alone USB device
— Supports one upstream facing port
— Supports three programmable USB endpoints
• Supports operation as a stand-alone USB host controller
— Supports USB root hub with one downstream-facing port
— Enhanced host controller interface (EHCI) compatible
• Supports full-speed (12 Mbps), and low-speed (1.5 Mbps) operation. Low-speed operation is
supported only in host mode.
• Supports UTMI + low pin interface (ULPI) or on-chip USB 2.0 full-speed PHY
1.7
Dual Enhanced Three-Speed Ethernet Controllers (eTSECs)
The MPC8313E eTSECs include the following features:
• Two RGMII/SGMII/MII/RMII/RTBI interfaces
• Two controllers designed to comply with IEEE Std 802.3®, 802.3u®, 802.3x®, 802.3z®,
802.3au®, and 802.3ab®
• Support for Wake-on-Magic Packet™, a method to bring the device from standby to full operating
mode
• MII management interface for external PHY control and status
• Three-speed support (10/100/1000 Mbps)
• On-chip high-speed serial interface to external SGMII PHY interface
• Support for IEEE Std 1588™
• Support for two full-duplex FIFO interface modes
• Multiple PHY interface configuration
• TCP/IP acceleration and QoS features available
• IP v4 and IP v6 header recognition on receive
• IP v4 header checksum verification and generation
• TCP and UDP checksum verification and generation
• Per-packet configurable acceleration
• Recognition of VLAN, stacked (queue in queue) VLAN, IEEE Std 802.2®, PPPoE session, MPLS
stacks, and ESP/AH IP-security headers
• Transmission from up to eight physical queues.
• Reception to up to eight physical queues
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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Freescale Semiconductor
Overview
•
•
•
•
•
•
1.8
Full- and half-duplex Ethernet support (1000 Mbps supports only full-duplex):
— IEEE 802.3 full-duplex flow control (automatic PAUSE frame generation or
software-programmed PAUSE frame generation and recognition)
— Programmable maximum frame length supports jumbo frames (up to 9.6 Kbytes) and
IEEE 802.1 virtual local area network (VLAN) tags and priority
— VLAN insertion and deletion
– Per-frame VLAN control word or default VLAN for each eTSEC
– Extracted VLAN control word passed to software separately
— Retransmission following a collision
— CRC generation and verification of inbound/outbound packets
— Programmable Ethernet preamble insertion and extraction of up to 7 bytes
MAC address recognition:
— Exact match on primary and virtual 48-bit unicast addresses
– VRRP and HSRP support for seamless router fail-over
— Up to 16 exact-match MAC addresses supported
— Broadcast address (accept/reject)
— Hash table match on up to 512 multicast addresses
— Promiscuous mode
Buffer descriptors backward compatible with MPC8260 and MPC860T 10/100 Ethernet
programming models
RMON statistics support
10-Kbyte internal transmit and 2-Kbyte receive FIFOs
MII management interface for control and status
Programmable Interrupt Controller (PIC)
The programmable interrupt controller (PIC) implements the necessary functions to provide a flexible
solution for general-purpose interrupt control. The PIC programming model supports 5 external and 34
internal discrete interrupt sources. Interrupts can also be redirected to an external interrupt controller.
1.9
Power Management Controller (PMC)
The MPC8313E power management controller includes the following features:
• Provides power management when the device is used in both host and agent modes
• Supports PCI power management 1.2 D0, D1, D2, D3hot, and D3cold states
• On-chip split power supply controlled through external power switch for minimum standby power
• Support for PME generation in PCI agent mode, PME detection in PCI host mode
• Supports wake-up from Ethernet (Magic Packet), USB, GPIO, and PCI (PME input as host)
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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5
Electrical Characteristics
1.10
Serial Peripheral Interface (SPI)
The serial peripheral interface (SPI) allows the MPC8313E to exchange data between other PowerQUICC
family chips, Ethernet PHYs for configuration, and peripheral devices such as EEPROMs, real-time
clocks, A/D converters, and ISDN devices.
The SPI is a full-duplex, synchronous, character-oriented channel that supports a four-wire interface
(receive, transmit, clock, and slave select). The SPI block consists of transmitter and receiver sections, an
independent baud-rate generator, and a control unit.
1.11
DMA Controller, Dual I2C, DUART, Local Bus Controller, and
Timers
The MPC8313E provides an integrated four-channel DMA controller with the following features:
• Allows chaining (both extended and direct) through local memory-mapped chain descriptors
(accessible by local masters)
• Supports misaligned transfers
There are two I2C controllers. These synchronous, multi-master buses can be connected to additional
devices for expansion and system development.
The DUART supports full-duplex operation and is compatible with the PC16450 and PC16550
programming models. The 16-byte FIFOs are supported for both the transmitter and the receiver.
The MPC8313E local bus controller (LBC) port allows connections with a wide variety of external DSPs
and ASICs. Three separate state machines share the same external pins and can be programmed separately
to access different types of devices. The general-purpose chip select machine (GPCM) controls accesses
to asynchronous devices using a simple handshake protocol. The three user programmable machines
(UPMs) can be programmed to interface to synchronous devices or custom ASIC interfaces. Each chip
select can be configured so that the associated chip interface can be controlled by the GPCM or UPM
controller. The FCM provides a glueless interface to parallel-bus NAND Flash E2PROM devices. The
FCM contains three basic configuration register groups—BRn, ORn, and FMR. Both may exist in the
same system. The local bus can operate at up to 66 MHz.
The MPC8313E system timers include the following features: periodic interrupt timer, real time clock,
software watchdog timer, and two general-purpose timer blocks.
2
Electrical Characteristics
This section provides the AC and DC electrical specifications and thermal characteristics for the
MPC8313E. The MPC8313E is currently targeted to these specifications. Some of these specifications are
independent of the I/O cell, but are included for a more complete reference. These are not purely I/O buffer
design specifications.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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Electrical Characteristics
2.1
Overall DC Electrical Characteristics
This section covers the ratings, conditions, and other characteristics.
2.1.1
Absolute Maximum Ratings
Table 1 provides the absolute maximum ratings.
Table 1. Absolute Maximum Ratings1
Characteristic
Symbol
Max Value
Unit
Notes
Core supply voltage
VDD
–0.3 to 1.26
V
—
PLL supply voltage
AVDD
–0.3 to 1.26
V
—
Core power supply for SerDes transceivers
XCOREVDD
–0.3 to 1.26
V
—
Pad power supply for SerDes transceivers
XPADVDD
–0.3 to 1.26
V
—
GVDD
–0.3 to 2.75
–0.3 to 1.98
V
—
NVDD/LVDD
–0.3 to 3.6
V
—
LVDDA/LVDDB
–0.3 to 3.6
V
—
MVIN
–0.3 to (GV DD + 0.3)
V
2, 5
MVREF
–0.3 to (GV DD + 0.3)
V
2, 5
Enhanced three-speed Ethernet signals
LVIN
–0.3 to (LVDDA + 0.3)
or
–0.3 to (LVDDB + 0.3)
V
4, 5
Local bus, DUART, SYS_CLK_IN, system
control, and power management, I2C, and
JTAG signals
OVIN
–0.3 to (NVDD + 0.3)
V
3, 5
PCI
OVIN
–0.3 to (NVDD + 0.3)
V
6
TSTG
–55 to 150
°C
—
DDR and DDR2 DRAM I/O voltage
PCI, local bus, DUART, system control and power
management, I2C, and JTAG I/O voltage
eTSEC, USB
Input voltage
DDR DRAM signals
DDR DRAM reference
Storage temperature range
Notes:
1. Functional and tested operating conditions are given in Table 2. Absolute maximum ratings are stress ratings only, and
functional operation at the maximums is not guaranteed. Stresses beyond those listed may affect device reliability or cause
permanent damage to the device.
2. Caution: MVIN must not exceed GVDD by more than 0.3 V. This limit may be exceeded for a maximum of 20 ms during
power-on reset and power-down sequences.
3. Caution: OVIN must not exceed NVDD by more than 0.3 V. This limit may be exceeded for a maximum of 20 ms during
power-on reset and power-down sequences.
4. Caution: LV IN must not exceed LV DDA/LVDDB by more than 0.3 V. This limit may be exceeded for a maximum of 20 ms during
power-on reset and power-down sequences.
2.1.2
Power Supply Voltage Specification
Table 2 provides the recommended operating conditions for the MPC8313E. Note that the values in
Table 2 are the recommended and tested operating conditions. If a particular block is given a voltage
falling within the range in the Recommended Value column, the MPC8313E is capable of delivering the
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
7
Electrical Characteristics
amount of current listed in the Current Requirement column; this is the maximum current possible. Proper
device operation outside of these conditions is not guaranteed.
Table 2. Recommended Operating Conditions
Symbol
Recommended
Value1
Unit
Current
Requirement
Core supply voltage
VDD
1.0 V ± 50 mV
V
469 mA
Internal core logic constant power
VDDC
1.0 V ± 50 mV
V
377 mA
SerDes internal digital power
XCOREVDD
1.0
V
170 mA
SerDes internal digital ground
XCOREVSS
0.0
V
—
SerDes I/O digital power
XPADVDD
1.0
V
10 mA
SerDes I/O digital ground
XPADVSS
0.0
V
—
SerDes analog power for PLL
SDAVDD
1.0 V ± 50 mV
V
10 mA
SerDes analog ground for PLL
SDAVSS
0.0
V
—
Dedicated 3.3 V analog power for USB PLL
USB_PLL_PWR3
3.3 V ± 300 mV
V
2–3 mA
Dedicated 1.0 V analog power for USB PLL
USB_PLL_PWR1
1.0 V ± 50 mV
V
2–3 mA
USB_PLL_GND
0.0
V
—
Dedicated USB power for USB bias circuit
USB_VDDA_BIAS
3.3 V ± 300 mV
V
4–5 mA
Dedicated USB ground for USB bias circuit
USB_VSSA_BIAS
0.0
V
—
Dedicated power for USB transceiver
USB_VDDA
3.3 V ± 300 mV
V
75 mA
Dedicated ground for USB transceiver
USB_VSSA
0.0
V
—
Analog power for e300 core APLL
AVDD1
1.0 V ± 50 mV
V
2–3 mA
Analog power for system APLL
AVDD2
1.0 V ± 50 mV
V
2–3 mA
DDR1 DRAM I/O voltage (333 MHz, 32-bit operation)
GVDD
2.5 V ± 125 mV
V
131 mA
DDR2 DRAM I/O voltage (333 MHz, 32-bit operation)
GVDD
1.8 V ± 80 mV
V
140 mA
Differential reference voltage for DDR controller
MVREF
1/2 DDR supply
(0.49 × GVDD to
0.51 × GV DD)
V
—
Standard I/O voltage
NVDD
3.3 V ± 300 mV2
V
74 mA
eTSEC2 IO supply
LVDDA
2.5 V ± 125 mV/
3.3 V ± 300 mV
V
22 mA
eTSEC1/USB DR IO supply
LVDDB
2.5 V ± 125 mV/
3.3 V ± 300 mV
V
44 mA
Supply for eLBC IOs
LVDD
3.3 V ± 300 mV
V
16 mA
Analog and digital ground
VSS
0.0
V
—
TJ
0 to 105
°C
—
Characteristic
Dedicated analog ground for USB PLL
Junction temperature
1
GVDD, NVDD, AVDD, and V DD must track each other and must vary in the same direction—either in the positive or negative
direction.
2 Some GPIO pins may operate from a 2.5-V supply when configured for other functions.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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Electrical Characteristics
Figure 2 shows the undershoot and overshoot voltages at the interfaces of the MPC8313E.
G/L/NVDD + 20%
G/L/NVDD + 5%
G/L/NVDD
VIH
VSS
VSS – 0.3 V
VIL
VSS – 0.7 V
Not to Exceed 10%
of tinterface1
Note:
1. Note that tinterface refers to the clock period associated with the bus clock
interface.
Figure 2. Overshoot/Undershoot Voltage for GVDD/NVDD/LVDD
2.1.3
Output Driver Characteristics
Table 3 provides information on the characteristics of the output driver strengths.
Table 3. Output Drive Capability
Driver Type
Output Impedance (Ω)
Supply Voltage
Local bus interface utilities signals
42
NVDD = 3.3 V
PCI signals
25
DDR signal
18
GVDD = 2.5 V
18
GVDD = 1.8 V
42
NVDD = 3.3 V
GPIO signals
42
NVDD = 3.3 V
eTSEC signals
42
LVDDA, LVDDB = 2.5/3.3 V
USB signals
42
LVDDB = 2.5/3.3 V
DDR2 signal
DUART, system control,
2.2
I2C,
JTAG, SPI
Power Sequencing
The MPC8313E does not require the core supply voltage (V DD and VDDC) and IO supply voltages (GVDD,
LVDD, and OVDD) to be applied in any particular order. Note that during power ramp-up, before the power
supplies are stable and if the I/O voltages are supplied before the core voltage, there might be a period of
time that all input and output pins are actively driven and cause contention and excessive current. In order
to avoid actively driving the I/O pins and to eliminate excessive current draw, apply the core voltage (VDD
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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9
Power Characteristics
and VDDC) before the I/O voltage (GVDD, LVDD, and OVDD) and assert PORESET before the power
supplies fully ramp up. In the case where the core voltage is applied first, the core voltage supply must rise
to 90% of its nominal value before the I/O supplies reach 0.7 V; see Figure 3. Once both the power supplies
(I/O voltage and core voltage) are stable, wait for a minimum of 32 clock cycles before negating
PORESET.
Note that there is no specific power down sequence requirement for the MPC8313E. I/O voltage supplies
(GVDD, LVDD, and OVDD) do not have any ordering requirements with respect to one another.
I/O Voltage (GV DD, GVDD, and OVDD)
V
Core Voltage (V DD, VDDC)
0.7 V
90%
t
0
PORESET
tSYS_CLK_IN /tPCI_SYNC_IN >= 32 clocks
Figure 3. Power-Up Sequencing Example
3
Power Characteristics
The estimated typical power dissipation, not including I/O supply power, for this family of MPC8313E
devices is shown in Table 4. Table 5 shows the estimated typical I/O power dissipation.
Table 4. MPC8313E Power Dissipation1
Core Frequency
(MHz)
CSB Frequency
(MHz)
Typical2
Maximum for
Rev. 1.0
Silicon3
Maximum for
Rev. 2.x or Later
Silicon3
Unit
333
167
820
1020
1200
mW
400
133
820
1020
1200
mW
1
The values do not include I/O supply power or AVDD, but do include core, USB PLL, and a portion of SerDes
digital power (not including XCOREV DD, XPADVDD, or SDAVDD, which all have dedicated power supplies for
the SerDes PHY).
2
Typical power is based on a voltage of VDD = 1.05 V and an artificial smoker test running at room
temperature.
3 Maximum power is based on a voltage of V
DD = 1.05 V, a junction temperature of TJ = 105°C, and an artificial
smoker test.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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Power Characteristics
Table 5 describes a typical scenario where blocks with the stated percentage of utilization and impedances
consume the amount of power described.
1
Table 5. MPC8313E Typical I/O Power Dissipation
Interface
Parameter
GVDD
(1.8 V)
GVDD
(2.5 V)
NVDD
(3.3 V)
LVDDA/
LVDDB
(3.3 V)
LVDDA/
LVDDB
(2.5 V)
LVDD
(3.3 V)
Unit
Comments
DDR 1, 60% utilization,
50% read/write
Rs = 22 Ω
Rt = 50 Ω
single pair of clock
capacitive load: data = 8 pF,
control address = 8 pF,
clock = 8 pF
333 MHz,
32 bits
—
0.355
—
—
—
—
W
—
266 MHz,
32 bits
—
0.323
—
—
—
—
W
—
DDR 2, 60% utilization,
50% read/write
Rs = 22 Ω
Rt = 75 Ω
single pair of clock
capacitive load: data = 8 pF,
control address = 8 pF,
clock = 8 pF
333 MHz,
32 bits
0.266
—
—
—
—
—
W
—
266 MHz,
32 bits
0.246
—
—
—
—
—
W
—
33 MHz
—
—
0.120
—
—
—
W
—
66 MHz
—
—
0.249
—
—
—
W
—
66 MHz
—
—
—
—
—
0.056
W
—
50 MHz
—
—
—
—
—
0.040
W
—
MII,
25 MHz
—
—
—
0.008
—
—
W
RGMII,
125 MHz
—
—
—
0.078
0.044
—
W
Multiple by
number of
interface
used
60 MHz
—
—
—
0.078
—
—
W
—
—
—
—
0.015
—
—
—
W
—
PCI I/O load = 50 pF
Local bus I/O load = 20 pF
TSEC I/O load = 20 pF
USBDR controller load = 20 pF
Other I/O
Table 6 shows the estimated core power dissipation of the MPC8313E while transitioning into the
D3 warm low-power state.
Table 6. MPC8313E Low-Power Modes Power Dissipation1
333-MHz Core, 167-MHz CSB2
Rev. 1.0 3
Rev. 2.x or
Later3
Unit
D3 warm
400
425
mW
1
All interfaces are enabled. For further power savings, disable the clocks to unused
blocks.
2 The interfaces are run at the following frequencies: DDR: 333 MHz, eLBC 83 MHz,
PCI 33 MHz, eTSEC1 and TSEC2: 167 MHz, SEC: 167 MHz, USB: 167 MHz. See
the SCCR register for more information.
3
This is maximum power in D3 Warm based on a voltage of 1.05 V and a junction
temperature of 105°C.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
11
Clock Input Timing
4
Clock Input Timing
This section provides the clock input DC and AC electrical characteristics for the MPC8313E.
4.1
DC Electrical Characteristics
Table 7 provides the system clock input (SYS_CLK_IN/PCI_SYNC_IN) DC timing specifications for the
MPC8313E.
Table 7. SYS_CLK_IN DC Electrical Characteristics
Parameter
Condition
Symbol
Min
Max
Unit
Input high voltage
—
VIH
2.4
NVDD + 0.3
V
Input low voltage
—
VIL
–0.3
0.4
V
SYS_CLK_IN input current
0 V ≤ VIN ≤ NVDD
IIN
—
±10
μA
PCI_SYNC_IN input current
0 V ≤ VIN ≤ 0.5 V
or
NVDD – 0.5 V ≤ VIN ≤ NVDD
IIN
—
±10
μA
PCI_SYNC_IN input current
0.5 V ≤ VIN ≤ NVDD – 0.5 V
IIN
—
±50
μA
4.2
AC Electrical Characteristics
The primary clock source for the MPC8313E can be one of two inputs, SYS_CLK_IN or PCI_CLK,
depending on whether the device is configured in PCI host or PCI agent mode. Table 8 provides the system
clock input (SYS_CLK_IN/PCI_CLK) AC timing specifications for the MPC8313E.
Table 8. SYS_CLK_IN AC Timing Specifications
Parameter/Condition
Symbol
Min
Typ
Max
Unit
Notes
SYS_CLK_IN/PCI_CLK frequency
fSYS_CLK_IN
24
—
66.67
MHz
1
SYS_CLK_IN/PCI_CLK cycle time
tSYS_CLK_IN
15
—
—
ns
—
tKH, tKL
0.6
0.8
1.2
ns
2
tKHK/tSYS_CLK_IN
40
—
60
%
3
—
—
—
±150
ps
4, 5
SYS_CLK_IN/PCI_CLK rise and fall time
SYS_CLK_IN/PCI_CLK duty cycle
SYS_CLK_IN/PCI_CLK jitter
Notes:
1. Caution: The system, core, security block must not exceed their respective maximum or minimum operating frequencies.
2. Rise and fall times for SYS_CLK_IN/PCI_CLK are measured at 0.4 and 2.7 V.
3. Timing is guaranteed by design and characterization.
4. This represents the total input jitter—short term and long term—and is guaranteed by design.
5. The SYS_CLK_IN/PCI_CLK driver’s closed loop jitter bandwidth should be <500 kHz at –20 dB. The bandwidth must be set
low to allow cascade-connected PLL-based devices to track SYS_CLK_IN drivers with the specified jitter.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
12
Freescale Semiconductor
RESET Initialization
5
RESET Initialization
This section describes the DC and AC electrical specifications for the reset initialization timing and
electrical requirements of the MPC8313E.
5.1
RESET DC Electrical Characteristics
Table 9 provides the DC electrical characteristics for the RESET pins.
Table 9. RESET Pins DC Electrical Characteristics
Characteristic
Symbol
Condition
Min
Max
Unit
Input high voltage
VIH
—
2.1
NVDD + 0.3
V
Input low voltage
VIL
—
–0.3
0.8
V
Input current
IIN
0 V ≤ VIN ≤ NVDD
—
±5
μA
Output high voltage
VOH
IOH = –8.0 mA
2.4
—
V
Output low voltage
VOL
IOL = 8.0 mA
—
0.5
V
Output low voltage
VOL
IOL = 3.2 mA
—
0.4
V
5.2
RESET AC Electrical Characteristics
Table 10 provides the reset initialization AC timing specifications.
Table 10. RESET Initialization Timing Specifications
Parameter/Condition
Min
Max
Unit
Notes
Required assertion time of HRESET or SRESET (input) to activate reset flow
32
—
tPCI_SYNC_IN
1
Required assertion time of PORESET with stable clock and power applied to
SYS_CLK_IN when the device is in PCI host mode
32
—
tSYS_CLK_IN
2
Required assertion time of PORESET with stable clock and power applied to
PCI_SYNC_IN when the device is in PCI agent mode
32
—
tPCI_SYNC_IN
1
HRESET assertion (output)
512
—
tPCI_SYNC_IN
1
Input setup time for POR configuration signals (CFG_RESET_SOURCE[0:3]
and CFG_SYS_CLK_IN_DIV) with respect to negation of PORESET when
the device is in PCI host mode
4
—
tSYS_CLK_IN
2
Input setup time for POR configuration signals (CFG_RESET_SOURCE[0:2]
and CFG_CLKIN_DIV) with respect to negation of PORESET when the
device is in PCI agent mode
4
—
tPCI_SYNC_IN
1
Input hold time for POR configuration signals with respect to negation of
HRESET
0
—
ns
—
Time for the device to turn off POR configuration signal drivers with respect
to the assertion of HRESET
—
4
ns
3
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
13
DDR and DDR2 SDRAM
Table 10. RESET Initialization Timing Specifications (continued)
Parameter/Condition
Min
Max
Unit
Notes
Time for the device to turn on POR configuration signal drivers with respect to
the negation of HRESET
1
—
tPCI_SYNC_IN
1, 3
Notes:
1. tPCI_SYNC_IN is the clock period of the input clock applied to PCI_SYNC_IN. When the device is In PCI host mode the primary
clock is applied to the SYS_CLK_IN input, and PCI_SYNC_IN period depends on the value of CFG_CLKIN_DIV.
2. tSYS_CLK_IN is the clock period of the input clock applied to SYS_CLK_IN. It is only valid when the device is in PCI host mode.
3. POR configuration signals consists of CFG_RESET_SOURCE[0:2] and CFG_CLKIN_DIV.
Table 11 provides the PLL lock times.
Table 11. PLL Lock Times
Parameter/Condition
PLL lock times
6
Min
Max
Unit
Notes
—
100
μs
—
DDR and DDR2 SDRAM
This section describes the DC and AC electrical specifications for the DDR SDRAM interface. Note that
DDR SDRAM is GVDD(typ) = 2.5 V and DDR2 SDRAM is GVDD(typ) = 1.8 V.
6.1
DDR and DDR2 SDRAM DC Electrical Characteristics
Table 12 provides the recommended operating conditions for the DDR2 SDRAM component(s) when
GVDD(typ) = 1.8 V.
Table 12. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
1.7
1.9
V
1
I/O reference voltage
MVREF
0.49 × GVDD
0.51 × GVDD
V
2
I/O termination voltage
VTT
MVREF – 0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF + 0.125
GVDD + 0.3
V
—
Input low voltage
VIL
–0.3
MVREF – 0.125
V
—
Output leakage current
IOZ
–9.9
9.9
μA
4
Output high current (VOUT = 1.420 V)
IOH
–13.4
—
mA
—
Output low current (VOUT = 0.280 V)
IOL
13.4
—
mA
—
Notes:
1. GV DD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MV REF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MV REF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V ≤ VOUT ≤ GV DD.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
14
Freescale Semiconductor
DDR and DDR2 SDRAM
Table 13 provides the DDR2 capacitance when GVDD(typ) = 1.8 V.
Table 13. DDR2 SDRAM Capacitance for GVDD(typ) = 1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS, DQS
CIO
6
8
pF
1
Delta input/output capacitance: DQ, DQS, DQS
CDIO
—
0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 1.8 V ± 0.090 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
Table 14 provides the recommended operating conditions for the DDR SDRAM component(s) when
GVDD(typ) = 2.5 V.
Table 14. DDR SDRAM DC Electrical Characteristics for GVDD(typ) = 2.5 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
2.3
2.7
V
1
I/O reference voltage
MVREF
0.49 × GVDD
0.51 × GVDD
V
2
I/O termination voltage
VTT
MVREF – 0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF + 0.15
GVDD + 0.3
V
—
Input low voltage
VIL
–0.3
MVREF – 0.15
V
—
Output leakage current
IOZ
–9.9
–9.9
μA
4
Output high current (VOUT = 1.95 V)
IOH
–16.2
—
mA
—
Output low current (VOUT = 0.35 V)
IOL
16.2
—
mA
—
Notes:
1. GV DD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MV REF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MV REF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V ≤ VOUT ≤ GV DD.
Table 15 provides the DDR capacitance when GVDD(typ) = 2.5 V.
Table 15. DDR SDRAM Capacitance for GVDD(typ) = 2.5 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS
CIO
6
8
pF
1
Delta input/output capacitance: DQ, DQS
CDIO
—
0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 2.5 V ± 0.125 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
15
DDR and DDR2 SDRAM
Table 16 provides the current draw characteristics for MVREF.
Table 16. Current Draw Characteristics for MVREF
Parameter/Condition
Symbol
Min
Max
Unit
Note
IMVREF
—
500
μA
1
Current draw for MVREF
Note:
1. The voltage regulator for MVREF must be able to supply up to 500 μA current.
6.2
DDR and DDR2 SDRAM AC Electrical Characteristics
This section provides the AC electrical characteristics for the DDR SDRAM interface.
6.2.1
DDR and DDR2 SDRAM Input AC Timing Specifications
Table 17 provides the input AC timing specifications for the DDR2 SDRAM when GVDD(typ) = 1.8 V.
Table 17. DDR2 SDRAM Input AC Timing Specifications for 1.8-V Interface
At recommended operating conditions with GVDD of 1.8 ± 5%.
Parameter
Symbol
Min
Max
Unit
Notes
AC input low voltage
VIL
—
MVREF – 0.25
V
—
AC input high voltage
VIH
MVREF + 0.25
—
V
—
Table 18 provides the input AC timing specifications for the DDR SDRAM when GVDD(typ) = 2.5 V.
Table 18. DDR SDRAM Input AC Timing Specifications for 2.5-V Interface
At recommended operating conditions with GVDD of 2.5 ± 5%.
Parameter
Symbol
Min
Max
Unit
Notes
AC input low voltage
VIL
—
MVREF – 0.31
V
—
AC input high voltage
VIH
MVREF + 0.31
—
V
—
Table 19 provides the input AC timing specifications for the DDR2 SDRAM interface.
Table 19. DDR and DDR2 SDRAM Input AC Timing Specifications
At recommended operating conditions. with GVDD of 2.5 ± 5%.
Parameter
Symbol
Min
Max
Unit
Notes
tCISKEW
—
—
ps
1, 2
333 MHz
—
–750
750
—
—
266 MHz
—
–750
750
—
—
Controller skew for MDQS—MDQ
Notes:
1. tCISKEW represents the total amount of skew consumed by the controller between MDQS[n] and any corresponding bit that
is captured with MDQS[n]. This should be subtracted from the total timing budget.
2. The amount of skew that can be tolerated from MDQS to a corresponding MDQ signal is called tDISKEW. This can be
determined by the following equation: tDISKEW = ± (T/4 – abs(tCISKEW)) where T is the clock period and abs(tCISKEW) is the
absolute value of tCISKEW.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
16
Freescale Semiconductor
DDR and DDR2 SDRAM
Figure 4 illustrates the DDR input timing diagram showing the tDISKEW timing parameter.
MCK[n]
MCK[n]
tMCK
MDQS[n]
MDQ[x]
D0
D1
tDISKEW
tDISKEW
Figure 4. DDR Input Timing Diagram
6.2.2
DDR and DDR2 SDRAM Output AC Timing Specifications
Table 20. DDR and DDR2 SDRAM Output AC Timing Specifications for Rev. 1.0 Silicon
Parameter
MCK[n] cycle time, MCK[n]/MCK[n] crossing
Symbol 1
Min
Max
Unit
Notes
tMCK
6
10
ns
2
ns
3
2.1
2.5
—
—
ns
3
2.4
3.15
—
—
ns
3
2.4
3.15
—
—
ns
3
2.4
3.15
—
—
–0.6
0.6
ns
4
ps
5
ps
5
ns
6
ADDR/CMD output setup with respect to MCK
333 MHz
266 MHz
tDDKHAS
ADDR/CMD output hold with respect to MCK
333 MHz
266 MHz
tDDKHAX
MCS[n] output setup with respect to MCK
333 MHz
266 MHz
tDDKHCS
MCS[n] output hold with respect to MCK
333 MHz
266 MHz
tDDKHCX
MCK to MDQS Skew
tDDKHMH
MDQ//MDM output setup with respect to
MDQS
333 MHz
266 MHz
tDDKHDS,
tDDKLDS
MDQ//MDM output hold with respect to MDQS
tDDKHDX,
tDDKLDX
800
900
333 MHz
266 MHz
MDQS preamble start
tDDKHMP
—
—
900
1100
—
—
–0.5 × tMCK – 0.6
–0.5 × tMCK + 0.6
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
17
DDR and DDR2 SDRAM
Table 20. DDR and DDR2 SDRAM Output AC Timing Specifications for Rev. 1.0 Silicon (continued)
Parameter
MDQS epilogue end
Symbol 1
Min
Max
Unit
Notes
tDDKHME
–0.6
0.6
ns
6
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. Output hold time can be read as DDR timing
(DD) from the rising or falling edge of the reference clock (KH or KL) until the output went invalid (AX or DX). For example,
tDDKHAS symbolizes DDR timing (DD) for the time tMCK memory clock reference (K) goes from the high (H) state until
outputs (A) are setup (S) or output valid time. Also, tDDKLDX symbolizes DDR timing (DD) for the time tMCK memory clock
reference (K) goes low (L) until data outputs (D) are invalid (X) or data output hold time.
2. All MCK/MCK referenced measurements are made from the crossing of the two signals ±0.1 V.
3. ADDR/CMD includes all DDR SDRAM output signals except MCK/MCK, MCS, and MDQ//MDM/MDQS.
4. Note that tDDKHMH follows the symbol conventions described in note 1. For example, tDDKHMH describes the DDR timing (DD)
from the rising edge of the MCK[n] clock (KH) until the MDQS signal is valid (MH). tDDKHMH can be modified through control
of the DQSS override bits in the TIMING_CFG_2 register. This is typically set to the same delay as the clock adjust in the
CLK_CNTL register. The timing parameters listed in the table assume that these 2 parameters have been set to the same
adjustment value. See the MPC8313E PowerQUICC™ II Pro Integrated Processor Family Reference Manual, for a
description and understanding of the timing modifications enabled by use of these bits.
5. Determined by maximum possible skew between a data strobe (MDQS) and any corresponding bit of data (MDQ), ECC
(MECC), or data mask (MDM). The data strobe should be centered inside of the data eye at the pins of the microprocessor.
6. All outputs are referenced to the rising edge of MCK[n] at the pins of the microprocessor. Note that tDDKHMP follows the
symbol conventions described in note 1.
Table 21. DDR and DDR2 SDRAM Output AC Timing Specifications for Silicon Rev 2.x or Later
Parameter
MCK[n] cycle time, MCK[n]/MCK[n] crossing
Symbol1
Min
Max
Unit
Notes
tMCK
6
10
ns
2
ns
3
2.1
2.5
—
—
ns
3
2.0
2.7
—
—
ns
3
2.1
3.15
—
—
ns
3
2.0
2.7
—
—
–0.6
0.6
ns
4
ps
5
ps
5
ADDR/CMD output setup with respect to MCK
333 MHz
266 MHz
tDDKHAS
ADDR/CMD output hold with respect to MCK
333 MHz
266 MHz
tDDKHAX
MCS[n] output setup with respect to MCK
333 MHz
266 MHz
tDDKHCS
MCS[n] output hold with respect to MCK
333 MHz
266 MHz
tDDKHCX
MCK to MDQS Skew
tDDKHMH
MDQ//MDM output setup with respect to
MDQS
333 MHz
266 MHz
tDDKHDS,
tDDKLDS
MDQ//MDM output hold with respect to MDQS
tDDKHDX,
tDDKLDX
333 MHz
266 MHz
800
900
750
1000
—
—
—
—
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
18
Freescale Semiconductor
DDR and DDR2 SDRAM
Table 21. DDR and DDR2 SDRAM Output AC Timing Specifications for Silicon Rev 2.x or Later (continued)
Symbol1
Min
Max
Unit
Notes
MDQS preamble start
tDDKHMP
–0.5 × tMCK – 0.6
–0.5 × tMCK + 0.6
ns
6
MDQS epilogue end
tDDKHME
–0.6
0.6
ns
6
Parameter
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. Output hold time can be read as DDR timing
(DD) from the rising or falling edge of the reference clock (KH or KL) until the output went invalid (AX or DX). For example,
tDDKHAS symbolizes DDR timing (DD) for the time tMCK memory clock reference (K) goes from the high (H) state until
outputs (A) are setup (S) or output valid time. Also, tDDKLDX symbolizes DDR timing (DD) for the time tMCK memory clock
reference (K) goes low (L) until data outputs (D) are invalid (X) or data output hold time.
2. All MCK/MCK referenced measurements are made from the crossing of the two signals ±0.1 V.
3. ADDR/CMD includes all DDR SDRAM output signals except MCK/MCK, MCS, and MDQ//MDM/MDQS.
4. Note that tDDKHMH follows the symbol conventions described in note 1. For example, tDDKHMH describes the DDR timing (DD)
from the rising edge of the MCK[n] clock (KH) until the MDQS signal is valid (MH). tDDKHMH can be modified through control
of the DQSS override bits in the TIMING_CFG_2 register. This is typically set to the same delay as the clock adjust in the
CLK_CNTL register. The timing parameters listed in the table assume that these 2 parameters have been set to the same
adjustment value. See the MPC8313E PowerQUICC™ II Pro Integrated Processor Family Reference Manual, for a
description and understanding of the timing modifications enabled by use of these bits.
5. Determined by maximum possible skew between a data strobe (MDQS) and any corresponding bit of data (MDQ), ECC
(MECC), or data mask (MDM). The data strobe should be centered inside of the data eye at the pins of the microprocessor.
6. All outputs are referenced to the rising edge of MCK[n] at the pins of the microprocessor. Note that tDDKHMP follows the
symbol conventions described in note 1.
NOTE
For the ADDR/CMD setup and hold specifications in Table 21, it is
assumed that the clock control register is set to adjust the memory clocks by
1/2 applied cycle.
Figure 5 shows the DDR SDRAM output timing for the MCK to MDQS skew measurement (tDDKHMH).
MCK[n]
MCK[n]
tMCK
tDDKHMH(max) = 0.6 ns
MDQS
tDDKHMH(min) = –0.6 ns
MDQS
Figure 5. Timing Diagram for tDDKHMH
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
19
DUART
Figure 6 shows the DDR and DDR2 SDRAM output timing diagram.
MCK[n]
MCK[n]
tMCK
tDDKHAS,tDDKHCS
tDDKHAX, tDDKHCX
ADDR/CMD
Write A0
NOOP
tDDKHMP
tDDKHMH
MDQS[n]
tDDKHME
tDDKHDS
tDDKLDS
MDQ[x]
D0
D1
tDDKLDX
tDDKHDX
Figure 6. DDR and DDR2 SDRAM Output Timing Diagram
Figure 7 provides the AC test load for the DDR bus.
Z0 = 50 Ω
Output
RL = 50 Ω
GVDD/2
Figure 7. DDR AC Test Load
7
DUART
This section describes the DC and AC electrical specifications for the DUART interface.
7.1
DUART DC Electrical Characteristics
Table 22 provides the DC electrical characteristics for the DUART interface.
Table 22. DUART DC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
High-level input voltage
VIH
2.0
NVDD + 0.3
V
Low-level input voltage NVDD
VIL
–0.3
0.8
V
High-level output voltage, IOH = –100 μA
VOH
NVDD – 0.2
—
V
Low-level output voltage, IOL = 100 μA
VOL
—
0.2
V
IIN
—
±5
μA
Input current (0 V ≤VIN ≤ NVDD)
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
20
Freescale Semiconductor
Ethernet: Three-Speed Ethernet, MII Management
7.2
DUART AC Electrical Specifications
Table 23 provides the AC timing parameters for the DUART interface.
Table 23. DUART AC Timing Specifications
Parameter
Value
Unit
Notes
Minimum baud rate
256
baud
—
Maximum baud rate
> 1,000,000
baud
1
16
—
2
Oversample rate
Notes:
1. Actual attainable baud rate is limited by the latency of interrupt processing.
2. The middle of a start bit is detected as the 8th sampled 0 after the 1-to-0 transition of the start bit. Subsequent bit values are
sampled each 16th sample.
8
Ethernet: Three-Speed Ethernet, MII Management
This section provides the AC and DC electrical characteristics for three-speed, 10/100/1000, and MII
management.
8.1
Enhanced Three-Speed Ethernet Controller (eTSEC)
(10/100/1000 Mbps)—MII/RMII/RGMII/SGMII/RTBI Electrical
Characteristics
The electrical characteristics specified here apply to all the media independent interface (MII), reduced
gigabit media independent interface (RGMII), serial gigabit media independent interface (SGMII), and
reduced ten-bit interface (RTBI) signals except management data input/output (MDIO) and management
data clock (MDC). The RGMII and RTBI interfaces are defined for 2.5 V, while the MII interface can be
operated at 3.3 V. The RMII and SGMII interfaces can be operated at either 3.3 or 2.5 V. The RGMII and
RTBI interfaces follow the Hewlett-Packard reduced pin-count interface for Gigabit Ethernet Physical
Layer Device Specification Version 1.2a (9/22/2000). The electrical characteristics for MDIO and MDC
are specified in Section 8.5, “Ethernet Management Interface Electrical Characteristics.”
8.1.1
TSEC DC Electrical Characteristics
All RGMII, RMII, and RTBI drivers and receivers comply with the DC parametric attributes specified in
Table 24 and Table 25. The RGMII and RTBI signals are based on a 2.5-V CMOS interface voltage as
defined by JEDEC EIA/JESD8-5.
Table 24. MII DC Electrical Characteristics
Parameter
Symbol
Conditions
Min
Max
Unit
Supply voltage 3.3 V
LVDDA/LVDDB
—
2.97
3.63
V
Output high voltage
VOH
2.40
LV DDA + 0.3
or
LVDDB + 0.3
V
IOH = –4.0 mA
LV DDA or LVDDB = Min
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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21
Ethernet: Three-Speed Ethernet, MII Management
Table 24. MII DC Electrical Characteristics (continued)
Parameter
Symbol
Conditions
Min
Max
Unit
Output low voltage
VOL
IOL = 4.0 mA
LVDDA or LV DDB = Min
VSS
0.50
V
Input high voltage
VIH
—
—
2.0
LV DDA + 0.3
or
LVDDB + 0.3
V
Input low voltage
VIL
—
—
–0.3
0.90
V
—
40
μA
–600
—
μA
Input high current
IIH
Input low current
IIL
VIN1 =
LVDDA or LVDDB
VIN1 = VSS
Note:
1. The symbol VIN, in this case, represents the LVIN symbol referenced in Table 1 and Table 2.
Table 25. RGMII/RTBI DC Electrical Characteristics
Parameters
Symbol
Conditions
Min
Max
Unit
Supply voltage 2.5 V
LVDDA/LVDDB
—
2.37
2.63
V
Output high voltage
VOH
IOH = –1.0 mA
LVDDA or LV DDB = Min
2.00
LV DDA + 0.3
or
LVDDB + 0.3
V
Output low voltage
VOL
IOL = 1.0 mA
LVDDA or LV DDB = Min
VSS – 0.3
0.40
V
Input high voltage
VIH
—
LVDDA or LV DDB = Min
1.7
LV DDA + 0.3
or
LVDDB + 0.3
V
Input low voltage
VIL
—
LVDDA or LV DDB = Min
–0.3
0.70
V
—
10
μA
–15
—
μA
Input high current
IIH
Input low current
IIL
VIN1 =
LVDDA or LVDDB
VIN1 = V SS
Note:
1. Note that the symbol VIN, in this case, represents the LVIN symbol referenced in Table 1 and Table 2.
8.2
MII, RGMII, and RTBI AC Timing Specifications
The AC timing specifications for MII, RMII, RGMII, and RTBI are presented in this section.
8.2.1
MII AC Timing Specifications
This section describes the MII transmit and receive AC timing specifications.
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Ethernet: Three-Speed Ethernet, MII Management
8.2.1.1
MII Transmit AC Timing Specifications
Table 26 provides the MII transmit AC timing specifications.
Table 26. MII Transmit AC Timing Specifications
At recommended operating conditions with LVDDA/LVDDB/NVDD of 3.3 V ± 0.3 V.
Symbol1
Min
Typ
Max
Unit
TX_CLK clock period 10 Mbps
tMTX
—
400
—
ns
TX_CLK clock period 100 Mbps
tMTX
—
40
—
ns
tMTXH/tMTX
35
—
65
%
tMTKHDX
1
5
15
ns
TX_CLK data clock rise VIL(min) to VIH(max)
tMTXR
1.0
—
4.0
ns
TX_CLK data clock fall VIH(max) to VIL(min)
tMTXF
1.0
—
4.0
ns
Parameter/Condition
TX_CLK duty cycle
TX_CLK to MII data TXD[3:0], TX_ER, TX_EN delay
Note:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tMTKHDX symbolizes MII transmit
timing (MT) for the time tMTX clock reference (K) going high (H) until data outputs (D) are invalid (X). Note that, in general,
the clock reference symbol representation is based on two to three letters representing the clock of a particular functional.
For example, the subscript of tMTX represents the MII(M) transmit (TX) clock. For rise and fall times, the latter convention is
used with the appropriate letter: R (rise) or F (fall).
Figure 8 shows the MII transmit AC timing diagram.
tMTX
tMTXR
TX_CLK
tMTXH
tMTXF
TXD[3:0]
TX_EN
TX_ER
tMTKHDX
Figure 8. MII Transmit AC Timing Diagram
8.2.1.2
MII Receive AC Timing Specifications
Table 27 provides the MII receive AC timing specifications.
Table 27. MII Receive AC Timing Specifications
At recommended operating conditions with LVDDA/LVDDB/NVDD of 3.3 V ± 0.3 V.
Symbol1
Min
Typ
Max
Unit
RX_CLK clock period 10 Mbps
tMRX
—
400
—
ns
RX_CLK clock period 100 Mbps
tMRX
—
40
—
ns
tMRXH/tMRX
35
—
65
%
tMRDVKH
10.0
—
—
ns
Parameter/Condition
RX_CLK duty cycle
RXD[3:0], RX_DV, RX_ER setup time to RX_CLK
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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Ethernet: Three-Speed Ethernet, MII Management
Table 27. MII Receive AC Timing Specifications (continued)
At recommended operating conditions with LVDDA/LVDDB/NVDD of 3.3 V ± 0.3 V.
Symbol1
Min
Typ
Max
Unit
tMRDXKH
10.0
—
—
ns
RX_CLK clock rise VIL(min) to VIH(max)
tMRXR
1.0
—
4.0
ns
RX_CLK clock fall time VIH(max) to VIL(min)
tMRXF
1.0
—
4.0
ns
Parameter/Condition
RXD[3:0], RX_DV, RX_ER hold time to RX_CLK
Note:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tMRDVKH symbolizes MII receive
timing (MR) with respect to the time data input signals (D) reach the valid state (V) relative to the tMRX clock reference (K)
going to the high (H) state or setup time. Also, tMRDXKL symbolizes MII receive timing (GR) with respect to the time data input
signals (D) went invalid (X) relative to the tMRX clock reference (K) going to the low (L) state or hold time. Note that, in general,
the clock reference symbol representation is based on three letters representing the clock of a particular functional. For
example, the subscript of tMRX represents the MII (M) receive (RX) clock. For rise and fall times, the latter convention is used
with the appropriate letter: R (rise) or F (fall).
Figure 9 provides the AC test load for TSEC.
Output
Z0 = 50 Ω
RL = 50 Ω
LV DDA/2 or LVDDB/2
Figure 9. TSEC AC Test Load
Figure 10 shows the MII receive AC timing diagram.
tMRXR
tMRX
RX_CLK
tMRXH
RXD[3:0]
RX_DV
RX_ER
tMRXF
Valid Data
tMRDVKH
tMRDXKH
Figure 10. MII Receive AC Timing Diagram RMII AC Timing Specifications
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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Freescale Semiconductor
Ethernet: Three-Speed Ethernet, MII Management
8.2.1.3
RMII Transmit AC Timing Specifications
Table 28 provides the RMII transmit AC timing specifications.
Table 28. RMII Transmit AC Timing Specifications
At recommended operating conditions with NVDD of 3.3 V ± 0.3 V.
Symbol1
Min
Typ
Max
Unit
tRMX
—
20
—
ns
tRMXH/tRMX
35
—
65
%
REF_CLK to RMII data TXD[1:0], TX_EN delay
tRMTKHDX
2
—
10
ns
REF_CLK data clock rise VIL(min) to VIH(max)
tRMXR
1.0
—
4.0
ns
REF_CLK data clock fall VIH(max) to VIL(min)
tRMXF
1.0
—
4.0
ns
Parameter/Condition
REF_CLK clock
REF_CLK duty cycle
Note:
1. The symbols used for timing specifications follow the pattern of t(first three letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tRMTKHDX symbolizes RMII
transmit timing (RMT) for the time tRMX clock reference (K) going high (H) until data outputs (D) are invalid (X). Note that, in
general, the clock reference symbol representation is based on two to three letters representing the clock of a particular
functional. For example, the subscript of tRMX represents the RMII(RM) reference (X) clock. For rise and fall times, the latter
convention is used with the appropriate letter: R (rise) or F (fall).
Figure 11 shows the RMII transmit AC timing diagram.
tRMXR
tRMX
REF_CLK
tRMXH
tRMXF
TXD[1:0]
TX_EN
tRMTKHDX
Figure 11. RMII Transmit AC Timing Diagram
8.2.1.4
RMII Receive AC Timing Specifications
Table 29 provides the RMII receive AC timing specifications.
Table 29. RMII Receive AC Timing Specifications
At recommended operating conditions with NVDD of 3.3 V ± 0.3 V.
Symbol1
Min
Typ
Max
Unit
tRMX
—
20
—
ns
tRMXH/tRMX
35
—
65
%
RXD[1:0], CRS_DV, RX_ER setup time to REF_CLK
tRMRDVKH
4.0
—
—
ns
RXD[1:0], CRS_DV, RX_ER hold time to REF_CLK
tRMRDXKH
2.0
—
—
ns
tRMXR
1.0
—
4.0
ns
Parameter/Condition
REF_CLK clock period
REF_CLK duty cycle
REF_CLK clock rise VIL(min) to VIH(max)
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Ethernet: Three-Speed Ethernet, MII Management
Table 29. RMII Receive AC Timing Specifications (continued)
At recommended operating conditions with NVDD of 3.3 V ± 0.3 V.
Parameter/Condition
Symbol1
Min
Typ
Max
Unit
tRMXF
1.0
—
4.0
ns
REF_CLK clock fall time V IH(max) to VIL(min)
Note:
1. The symbols used for timing specifications follow the pattern of t(first three letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tRMRDVKH symbolizes RMII
receive timing (RMR) with respect to the time data input signals (D) reach the valid state (V) relative to the tRMX clock
reference (K) going to the high (H) state or setup time. Also, tRMRDXKL symbolizes RMII receive timing (RMR) with respect to
the time data input signals (D) went invalid (X) relative to the tRMX clock reference (K) going to the low (L) state or hold time.
Note that, in general, the clock reference symbol representation is based on three letters representing the clock of a particular
functional. For example, the subscript of tRMX represents the RMII (RM) reference (X) clock. For rise and fall times, the latter
convention is used with the appropriate letter: R (rise) or F (fall).
Figure 12 provides the AC test load.
Z0 = 50 Ω
Output
RL = 50 Ω
NVDD/2
Figure 12. AC Test Load
Figure 13 shows the RMII receive AC timing diagram.
tRMXR
tRMX
REF_CLK
tRMXH
RXD[1:0]
CRS_DV
RX_ER
tRMXF
Valid Data
tRMRDVKH
tRMRDXKH
Figure 13. RMII Receive AC Timing Diagram
8.2.2
RGMII and RTBI AC Timing Specifications
Table 30 presents the RGMII and RTBI AC timing specifications.
Table 30. RGMII and RTBI AC Timing Specifications
At recommended operating conditions with LVDDA/LVDDB of 2.5 V ± 5%.
Parameter/Condition
Data to clock output skew (at transmitter)
Data to clock input skew (at receiver)
Clock cycle duration
3
Duty cycle for 1000Base-T
4, 5
2
Symbol1
Min
Typ
Max
Unit
tSKRGT
–0.5
—
0.5
ns
tSKRGT
1.0
—
2.8
ns
tRGT
7.2
8.0
8.8
ns
tRGTH/tRGT
45
50
55
%
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Ethernet: Three-Speed Ethernet, MII Management
Table 30. RGMII and RTBI AC Timing Specifications (continued)
At recommended operating conditions with LVDDA/LVDDB of 2.5 V ± 5%.
Symbol1
Min
Typ
Max
Unit
tRGTH/tRGT
40
50
60
%
Rise time (20%–80%)
tRGTR
—
—
0.75
ns
Fall time (20%–80%)
tRGTF
—
—
0.75
ns
6
—
8.0
—
ns
47
—
53
%
Parameter/Condition
Duty cycle for 10BASE-T and 100BASE-TX
3, 5
GTX_CLK125 reference clock period
tG12
tG125H/tG125
GTX_CLK125 reference clock duty cycle
Notes:
1. Note that, in general, the clock reference symbol representation for this section is based on the symbols RGT to represent
RGMII and RTBI timing. For example, the subscript of tRGT represents the RTBI (T) receive (RX) clock. Note also that the
notation for rise (R) and fall (F) times follows the clock symbol that is being represented. For symbols representing skews,
the subscript is skew (SK) followed by the clock that is being skewed (RGT).
2. This implies that PC board design requires clocks to be routed such that an additional trace delay of greater than 1.5 ns is
added to the associated clock signal.
3. For 10 and 100 Mbps, tRGT scales to 400 ns ± 40 ns and 40 ns ± 4 ns, respectively.
4. Duty cycle may be stretched/shrunk during speed changes or while transitioning to a received packet's clock domains as long
as the minimum duty cycle is not violated and stretching occurs for no more than three tRGT of the lowest speed transitioned
between.
5. Duty cycle reference is LVDDA/2 or LVDDB/2.
6. This symbol is used to represent the external GTX_CLK125 and does not follow the original symbol naming convention.
Figure 14 shows the RGMII and RTBI AC timing and multiplexing diagrams.
tRGT
tRGTH
GTX_CLK
(At Transmitter)
tSKRGT
TXD[8:5][3:0]
TXD[7:4][3:0]
TX_CTL
TXD[8:5]
TXD[3:0] TXD[7:4]
TXD[4]
TXEN
TXD[9]
TXERR
tSKRGT
TX_CLK
(At PHY)
RXD[8:5][3:0]
RXD[7:4][3:0]
RXD[8:5]
RXD[3:0] RXD[7:4]
tSKRGT
RX_CTL
RXD[4]
RXDV
RXD[9]
RXERR
tSKRGT
RX_CLK
(At PHY)
Figure 14. RGMII and RTBI AC Timing and Multiplexing Diagrams
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
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Ethernet: Three-Speed Ethernet, MII Management
8.3
SGMII Interface Electrical Characteristics
Each SGMII port features a 4-wire AC-coupled serial link from the dedicated SerDes interface of
MPC8313E as shown in Figure 15, where CTX is the external (on board) AC-coupled capacitor. Each
output pin of the SerDes transmitter differential pair features a 50-Ω output impedance. Each input of the
SerDes receiver differential pair features 50-Ω on-die termination to XCOREVSS. The reference circuit
of the SerDes transmitter and receiver is shown in Figure 33.
When an eTSEC port is configured to operate in SGMII mode, the parallel interface’s output signals of
this eTSEC port can be left floating. The input signals should be terminated based on the guidelines
described in Section 22.5, “Connection Recommendations,” as long as such termination does not violate
the desired POR configuration requirement on these pins, if applicable.
When operating in SGMII mode, the TSEC_GTX_CLK125 clock is not required for this port. Instead, the
SerDes reference clock is required on SD_REF_CLK and SD_REF_CLK pins.
8.3.1
DC Requirements for SGMII SD_REF_CLK and SD_REF_CLK
The characteristics and DC requirements of the separate SerDes reference clock are described in Section 9,
“High-Speed Serial Interfaces (HSSI).”
8.3.2
AC Requirements for SGMII SD_REF_CLK and SD_REF_CLK
Table 31 lists the SGMII SerDes reference clock AC requirements. Note that SD_REF_CLK and
SD_REF_CLK are not intended to be used with, and should not be clocked by, a spread spectrum clock
source.
Table 31. SD_REF_CLK and SD_REF_CLK AC Requirements
Symbol
Min
Typ
Max
Unit
REFCLK cycle time
—
8
—
ns
tREFCJ
REFCLK cycle-to-cycle jitter. Difference in the period of any two
adjacent REFCLK cycles
—
—
100
ps
tREFPJ
Phase jitter. Deviation in edge location with respect to mean
edge location
–50
—
50
ps
tREF
8.3.3
Parameter Description
SGMII Transmitter and Receiver DC Electrical Characteristics
Table 32 and Table 33 describe the SGMII SerDes transmitter and receiver AC-coupled DC electrical
characteristics. Transmitter DC characteristics are measured at the transmitter outputs (SD_TX[n] and
SD_TX[n]) as depicted in Figure 16.
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Ethernet: Three-Speed Ethernet, MII Management
Table 32. SGMII DC Transmitter Electrical Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
XCOREVDD
0.95
1.0
1.05
V
Output high voltage
VOH
—
—
XCOREVDD-Typ/2
+ |VOD|-max/2
mV
1
Output low voltage
VOL
XCOREVDD-Typ/2
– |VOD|-max/2
—
—
mV
1
Output ringing
VRING
—
—
10
%
Output differential voltage2, 3
|VOD|
323
500
725
mV
Equalization
setting: 1.0x
Output offset voltage
VOS
425
500
575
mV
1, 4
Output impedance
(single-ended)
RO
40
—
60
Ω
Mismatch in a pair
ΔRO
—
—
10
%
Change in VOD between 0 and 1
Δ|VOD|
—
—
25
mV
Change in VOS between 0 and 1
ΔVOS
—
—
25
mV
Output current on short to GND
ISA, ISB
—
—
40
mA
Supply voltage
Notes
Notes:
1. This will not align to DC-coupled SGMII. XCOREVDD-Typ = 1.0 V.
2. |VOD| = |VTXn – V TXn|. |VOD| is also referred as output differential peak voltage. VTX-DIFFp-p = 2*|VOD|.
3. The |VOD| value shown in the Typ column is based on the condition of XCOREVDD-Typ = 1.0 V, no common mode offset
variation (VOS = 500 mV), SerDes transmitter is terminated with 100-Ω differential load between TX[n] and TX[n].
4. VOS is also referred to as output common mode voltage.
50 Ω
TXn
CTX
RXm
50 Ω
Transmitter
Receiver
50 Ω
TXn
MPC8313E SGMII
SerDes Interface
RXn
Receiver
CTX
RXm
CTX
TXm
50 Ω
50 Ω
50 Ω
Transmitter
50 Ω
50 Ω
RXn
CTX
TXm
Figure 15. 4-Wire AC-Coupled SGMII Serial Link Connection Example
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Ethernet: Three-Speed Ethernet, MII Management
MPC8313E SGMII
SerDes Interface
50 Ω
TXn
50 Ω
Transmitter
Vos
VOD
50 Ω
50 Ω
TXn
Figure 16. SGMII Transmitter DC Measurement Circuit
Table 33. SGMII DC Receiver Electrical Characteristics
Parameter
Supply voltage
Symbol
Min
Typ
Max
Unit
XCOREVDD
0.95
1.0
1.05
V
DC Input voltage range
N/A
1
Input differential voltage
VRX_DIFFp-p
100
—
1200
mV
Loss of signal threshold
VLOS
30
—
100
mV
VCM_ACp-p
—
—
100
mV
Receiver differential input impedance
ZRX_DIFF
80
100
120
Ω
Receiver common mode input impedance
ZRX_CM
20
—
35
Ω
VCM
—
Vxcorevss
—
V
Input AC common mode voltage
Common mode input voltage
Notes
2
3
4
Notes:
1. Input must be externally AC-coupled.
2. VRX_DIFFp-p is also referred to as peak to peak input differential voltage
3. VCM_ACp-p is also referred to as peak to peak AC common mode voltage.
4. On-chip termination to XCOREVSS.
8.3.4
SGMII AC Timing Specifications
This section describes the SGMII transmit and receive AC timing specifications. Transmitter and receiver
characteristics are measured at the transmitter outputs (TX[n] and TX[n]) or at the receiver inputs (RX[n]
and RX[n]) as depicted in Figure 18, respectively.
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Ethernet: Three-Speed Ethernet, MII Management
8.3.4.1
SGMII Transmit AC Timing Specifications
Table 34 provides the SGMII transmit AC timing targets. A source synchronous clock is not provided.
Table 34. SGMII Transmit AC Timing Specifications
At recommended operating conditions with XCOREVDD = 1.0 V ± 5%.
Parameter
Symbol
Min
Typ
Max
Unit
Deterministic jitter
JD
—
—
0.17
UI p-p
Total jitter
JT
—
—
0.35
UI p-p
Unit interval
UI
799.92
800
800.08
ps
VOD fall time (80%–20%)
tfall
50
—
120
ps
VOD rise time (20%–80%)
trise
50
—
120
ps
Notes
1
Note:
1. Each UI is 800 ps ± 100 ppm.
8.3.4.2
SGMII Receive AC Timing Specifications
Table 35 provides the SGMII receive AC timing specifications. Source synchronous clocking is not
supported. Clock is recovered from the data. Figure 17 shows the SGMII receiver input compliance mask
eye diagram.
Table 35. SGMII Receive AC Timing Specifications
At recommended operating conditions with XCOREVDD = 1.0 V ± 5%.
Parameter
Symbol
Min
Typ
Max
Unit
Notes
JD
0.37
—
—
UI p-p
1
Combined deterministic and random jitter tolerance
JDR
0.55
—
—
UI p-p
1
Sinusoidal jitter tolerance
JSIN
0.1
—
—
UI p-p
1
JT
0.65
—
—
UI p-p
1
Bit error ratio
BER
—
—
10–12
Unit interval
UI
799.92
800
800.08
ps
2
CTX
5
—
200
nF
3
Deterministic jitter tolerance
Total jitter tolerance
AC coupling capacitor
Notes:
1. Measured at receiver.
2. Each UI is 800 ps ± 100 ppm.
3. The external AC coupling capacitor is required. It is recommended to be placed near the device transmitter outputs.
4. Refer to the RapidIO™ 1x/4x LP Serial Physical Layer Specification, for interpretation of jitter specifications.
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Receiver Differential Input Voltage
VRX_DIFFp-p-max/2
VRX_DIFFp-p-min/2
0
–VRX_DIFFp-p-min/2
–VRX_DIFFp-p-max/2
0
0.275
0.4
Time (UI)
0.6
1
0.725
Figure 17. SGMII Receiver Input Compliance Mask
D+ Package
Pin
C = TX
TX
Silicon
+ Package
C = TX
D– Package
Pin
R = 50 Ω
R = 50 Ω
Figure 18. SGMII AC Test/Measurement Load
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Ethernet: Three-Speed Ethernet, MII Management
8.4
eTSEC IEEE 1588 AC Specifications
Figure 19 provides the data and command output timing diagram.
tT1588CLKOUT
tT1588CLKOUTH
TSEC_1588_CLK_OUT
tT1588OV
TSEC_1588_PULSE_OUT
TSEC_1588_TRIG_OUT
Note: The output delay is count starting rising edge if tT1588CLKOUT is non-inverting. Otherwise, it is
count starting falling edge.
Figure 19. eTSEC IEEE 1588 Output AC Timing
Figure 20 provides the data and command input timing diagram.
tT1588CLK
tT1588CLKH
TSEC_1588_CLK
TSEC_1588_TRIG_IN
tT1588TRIGH
Figure 20. eTSEC IEEE 1588 Input AC Timing
The IEEE 1588 AC timing specifications are in Table 36.
Table 36. eTSEC IEEE 1588 AC Timing Specifications
At recommended operating conditions with L/TVDD of 3.3 V ± 5%.
Parameter/Condition
Symbol
Min
Typ
Max
Unit
Notes
tT1588CLK
3.8
—
TRX_CLK × 9
ns
1, 3
tT1588CLKH/tT1588CLK
40
50
60
%
TSEC_1588_CLK peak-to-peak
jitter
tT1588CLKINJ
—
—
250
ps
Rise time eTSEC_1588_CLK
(20%–80%)
tT1588CLKINR
1.0
—
2.0
ns
Fall time eTSEC_1588_CLK
(80%–20%)
tT1588CLKINF
1.0
—
2.0
ns
TSEC_1588_CLK_OUT clock
period
tT1588CLKOUT
2 × tT1588CLK
—
—
ns
TSEC_1588_CLK_OUT duty cycle
tT1588CLKOTH
/tT1588CLKOUT
30
50
70
%
tT1588OV
0.5
—
3.0
ns
TSEC_1588_CLK clock period
TSEC_1588_CLK duty cycle
TSEC_1588_PULSE_OUT
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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33
Ethernet: Three-Speed Ethernet, MII Management
Table 36. eTSEC IEEE 1588 AC Timing Specifications (continued)
At recommended operating conditions with L/TVDD of 3.3 V ± 5%.
Parameter/Condition
Symbol
Min
Typ
Max
Unit
Notes
TSEC_1588_TRIG_IN pulse width
tT1588TRIGH
2 × tT1588CLK_MAX
—
—
ns
2
Notes:
1.T RX_CLK is the max clock period of eTSEC receiving clock selected by TMR_CTRL[CKSEL]. See the MPC8313E
PowerQUICC™ II Pro Integrated Processor Family Reference Manual, for a description of TMR_CTRL registers.
2. It need to be at least two times of clock period of clock selected by TMR_CTRL[CKSEL]. See the MPC8313E PowerQUICC™
II Pro Integrated Processor Family Reference Manual, for a description of TMR_CTRL registers.
3. The maximum value of tT1588CLK is not only defined by the value of TRX_CLK, but also defined by the recovered clock. For
example, for 10/100/1000 Mbps modes, the maximum value of tT1588CLK is 3600, 280, and 56 ns, respectively.
8.5
Ethernet Management Interface Electrical Characteristics
The electrical characteristics specified here apply to MII management interface signals MDIO
(management data input/output) and MDC (management data clock). The electrical characteristics for
MII, RMII, RGMII, SGMII, and RTBI are specified in Section 8.1, “Enhanced Three-Speed Ethernet
Controller (eTSEC) (10/100/1000 Mbps)—MII/RMII/RGMII/SGMII/RTBI Electrical Characteristics.”
8.5.1
MII Management DC Electrical Characteristics
The MDC and MDIO are defined to operate at a supply voltage of 2.5 V or 3.3 V. Table 37 and Table 38
provide the DC electrical characteristics for MDIO and MDC.
Table 37. MII Management DC Electrical Characteristics When Powered at 2.5 V
Parameter
Supply voltage (2.5 V)
Symbol
Conditions
Min
Max
Unit
NVDDA/NV DDB
—
2.37
2.63
V
Output high voltage
VOH
IOH = –1.0 mA
NVDDA or NVDDB = Min
2.00
NVDDA + 0.3
or
NVDDB + 0.3
V
Output low voltage
VOL
IOL = 1.0 mA
NVDDA or NVDDB = Min
VSS – 0.3
0.40
V
Input high voltage
VIH
—
NVDDA or NVDDB = Min
1.7
—
V
Input low voltage
VIL
—
NVDDA or NVDDB = Min
–0.3
0.70
V
Input high current
IIH
VIN1 = NVDDA or NV DDB
—
10
μA
Input low current
IIL
VIN = NVDDA or NVDDB
–15
—
μA
Note:
1. Note that the symbol VIN, in this case, represents the LVIN symbol referenced in Table 1 and Table 2.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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Ethernet: Three-Speed Ethernet, MII Management
Table 38. MII Management DC Electrical Characteristics When Powered at 3.3 V
Parameter
Symbol
Conditions
Min
Max
Unit
—
2.97
3.63
V
Supply voltage (3.3 V) NVDDA/NV DDB
Output high voltage
VOH
IOH = –1.0 mA
NVDDA or NVDDB = Min
2.10
NVDDA + 0.3
or
NVDDB + 0.3
V
Output low voltage
VOL
IOL = 1.0 mA
LVDDA or LV DDB = Min
VSS
0.50
V
Input high voltage
VIH
—
2.0
—
V
Input low voltage
VIL
—
—
0.80
V
Input high current
IIH
NVDDA or NVDDB = Max
VIN1 = 2.1 V
—
40
μA
Input low current
IIL
NVDDA or NVDDB = Max
VIN = 0.5 V
–600
—
μA
Note:
1. Note that the symbol VIN, in this case, represents the LVIN symbol referenced in Table 1 and Table 2.
8.5.2
MII Management AC Electrical Specifications
Table 39 provides the MII management AC timing specifications.
Table 39. MII Management AC Timing Specifications
At recommended operating conditions with LVDDA/LVDDB is 3.3 V ± 0.3V or 2.5 V ± 5%
Symbol 1
Min
Typ
Max
Unit
Notes
MDC frequency
fMDC
—
2.5
—
MHz
2
MDC period
tMDC
—
400
—
ns
MDC clock pulse width high
tMDCH
32
—
—
ns
MDC to MDIO delay
tMDKHDX
10
—
170
ns
MDIO to MDC setup time
tMDDVKH
5
—
—
ns
MDIO to MDC hold time
tMDDXKH
0
—
—
ns
MDC rise time
tMDCR
—
—
10
ns
MDC fall time
tMDHF
—
—
10
ns
Parameter/Condition
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tMDKHDX symbolizes management
data timing (MD) for the time tMDC from clock reference (K) high (H) until data outputs (D) are invalid (X) or data hold time.
Also, tMDDVKH symbolizes management data timing (MD) with respect to the time data input signals (D) reach the valid state
(V) relative to the tMDC clock reference (K) going to the high (H) state or setup time. For rise and fall times, the latter
convention is used with the appropriate letter: R (rise) or F (fall).
2. This parameter is dependent on the csb_clk speed. (The MIIMCFG[Mgmt Clock Select] field determines the clock frequency
of the Mgmt Clock EC_MDC.)
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
35
High-Speed Serial Interfaces (HSSI)
Figure 21 shows the MII management AC timing diagram.
tMDC
tMDCR
MDC
tMDCF
tMDCH
MDIO
(Input)
tMDDVKH
tMDDXKH
MDIO
(Output)
tMDKHDX
Figure 21. MII Management Interface Timing Diagram
9
High-Speed Serial Interfaces (HSSI)
This section describes the common portion of SerDes DC electrical specifications, which is the DC
requirement for SerDes reference clocks. The SerDes data lane’s transmitter and receiver reference circuits
are also shown.
9.1
Signal Terms Definition
The SerDes utilizes differential signaling to transfer data across the serial link. This section defines terms
used in the description and specification of differential signals.
Figure 22 shows how the signals are defined. For illustration purpose, only one SerDes lane is used for
description. The figure shows waveform for either a transmitter output (TXn and TXn) or a receiver input
(RXn and RXn). Each signal swings between A volts and B volts where A > B.
Using this waveform, the definitions are as follows. To simplify illustration, the following definitions
assume that the SerDes transmitter and receiver operate in a fully symmetrical differential signaling
environment.
1. Single-ended swing
The transmitter output signals and the receiver input signals TXn, TXn, RXn, and RXn each have
a peak-to-peak swing of A – B volts. This is also referred as each signal wire’s single-ended swing.
2. Differential output voltage, VOD (or differential output swing):
The differential output voltage (or swing) of the transmitter, VOD, is defined as the difference of
the two complimentary output voltages: VTXn – VTXn. The VOD value can be either positive or
negative.
3. Differential input voltage, VID (or differential input swing):
The differential input voltage (or swing) of the receiver, VID, is defined as the difference of the two
complimentary input voltages: VRXn – VRXn. The VID value can be either positive or negative.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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Freescale Semiconductor
High-Speed Serial Interfaces (HSSI)
4. Differential peak voltage, VDIFFp
The peak value of the differential transmitter output signal or the differential receiver input signal
is defined as differential peak voltage, VDIFFp = |A – B| volts.
5. Differential peak-to-peak, VDIFFp-p
Since the differential output signal of the transmitter and the differential input signal of the receiver
each range from A – B to –(A – B) volts, the peak-to-peak value of the differential transmitter
output signal or the differential receiver input signal is defined as differential peak-to-peak voltage,
VDIFFp-p = 2 × VDIFFp = 2 × |(A – B)| volts, which is twice of differential swing in amplitude, or
twice of the differential peak. For example, the output differential peak-peak voltage can also be
calculated as VTX-DIFFp-p = 2 × |VOD|.
6. Differential waveform
The differential waveform is constructed by subtracting the inverting signal (TXn, for example)
from the non-inverting signal (TXn, for example) within a differential pair. There is only one signal
trace curve in a differential waveform. The voltage represented in the differential waveform is not
referenced to ground. Refer to Figure 31 as an example for differential waveform.
7. Common mode voltage, Vcm
The common mode voltage is equal to one half of the sum of the voltages between each conductor
of a balanced interchange circuit and ground. In this example, for SerDes output, Vcm_out =
(VTXn + VTXn)/2 = (A + B)/2, which is the arithmetic mean of the two complimentary output
voltages within a differential pair. In a system, the common mode voltage may often differ from
one component’s output to the other’s input. Sometimes, it may be even different between the
receiver input and driver output circuits within the same component. It’s also referred as the DC
offset in some occasion.
TXn or RXn
A Volts
Vcm = (A + B)/2
TXn or RXn
B Volts
Differential Swing, V ID or VOD = A – B
Differential Peak Voltage, V DIFFp = |A – B|
Differential Peak-Peak Voltage, VDIFFpp = 2*VDIFFp (not shown)
Figure 22. Differential Voltage Definitions for Transmitter or Receiver
To illustrate these definitions using real values, consider the case of a CML (current mode logic)
transmitter that has a common mode voltage of 2.25 V and each of its outputs, TD and TD, has a swing
that goes between 2.5 and 2.0 V. Using these values, the peak-to-peak voltage swing of each signal (TD or
TD) is 500 mV p-p, which is referred as the single-ended swing for each signal. In this example, since the
differential signaling environment is fully symmetrical, the transmitter output’s differential swing (VOD)
has the same amplitude as each signal’s single-ended swing. The differential output signal ranges between
500 and –500 mV, in other words, VOD is 500 mV in one phase and –500 mV in the other phase. The peak
differential voltage (VDIFFp) is 500 mV. The peak-to-peak differential voltage (VDIFFp-p) is 1000 mV p-p.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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37
High-Speed Serial Interfaces (HSSI)
9.2
SerDes Reference Clocks
The SerDes reference clock inputs are applied to an internal PLL whose output creates the clock used by
the corresponding SerDes lanes. The SerDes reference clocks input is SD_REF_CLK and SD_REF_CLK
for SGMII interface.
The following sections describe the SerDes reference clock requirements and some application
information.
9.2.1
SerDes Reference Clock Receiver Characteristics
Figure 23 shows a receiver reference diagram of the SerDes reference clocks.
• The supply voltage requirements for XCOREVDD are specified in Table 1 and Table 2.
• SerDes reference clock receiver reference circuit structure:
— The SD_REF_CLK and SD_REF_CLK are internally AC-coupled differential inputs as shown
in Figure 23. Each differential clock input (SD_REF_CLK or SD_REF_CLK) has a 50-Ω
termination to XCOREVSS followed by on-chip AC coupling.
— The external reference clock driver must be able to drive this termination.
— The SerDes reference clock input can be either differential or single-ended. Refer to the
differential mode and single-ended mode description below for further detailed requirements.
• The maximum average current requirement that also determines the common mode voltage range:
— When the SerDes reference clock differential inputs are DC coupled externally with the clock
driver chip, the maximum average current allowed for each input pin is 8 mA. In this case, the
exact common mode input voltage is not critical as long as it is within the range allowed by the
maximum average current of 8 mA (refer to the following bullet for more detail), since the
input is AC-coupled on-chip.
— This current limitation sets the maximum common mode input voltage to be less than 0.4 V
(0.4 V/50 = 8 mA) while the minimum common mode input level is 0.1 V above XCOREVSS.
For example, a clock with a 50/50 duty cycle can be produced by a clock driver with output
driven by its current source from 0 to 16 mA (0–0.8 V), such that each phase of the differential
input has a single-ended swing from 0 V to 800 mV with the common mode voltage at 400 mV.
— If the device driving the SD_REF_CLK and SD_REF_CLK inputs cannot drive 50 Ω to
XCOREVSS DC, or it exceeds the maximum input current limitations, then it must be
AC-coupled off-chip.
• The input amplitude requirement. This requirement is described in detail in the following sections.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
38
Freescale Semiconductor
High-Speed Serial Interfaces (HSSI)
50 Ω
SDn_REF_CLK
Input
Amp
SDn_REF_CLK
50 Ω
Figure 23. Receiver of SerDes Reference Clocks
9.2.2
DC Level Requirement for SerDes Reference Clocks
The DC level requirement for the MPC8313E SerDes reference clock inputs is different depending on the
signaling mode used to connect the clock driver chip and SerDes reference clock inputs as described
below.
• Differential mode
— The input amplitude of the differential clock must be between 400 and 1600 mV differential
peak-to-peak (or between 200 and 800 mV differential peak). In other words, each signal wire
of the differential pair must have a single-ended swing less than 800 mV and greater than
200 mV. This requirement is the same for both external DC-coupled or AC-coupled
connection.
— For external DC-coupled connection, as described in Section 9.2.1, “SerDes Reference Clock
Receiver Characteristics,” the maximum average current requirements sets the requirement for
average voltage (common mode voltage) to be between 100 and 400 mV. Figure 24 shows the
SerDes reference clock input requirement for the DC-coupled connection scheme.
— For external AC-coupled connection, there is no common mode voltage requirement for the
clock driver. Since the external AC-coupling capacitor blocks the DC level, the clock driver
and the SerDes reference clock receiver operate in different command mode voltages. The
SerDes reference clock receiver in this connection scheme has its common mode voltage set to
XCOREVSS. Each signal wire of the differential inputs is allowed to swing below and above
the command mode voltage (XCOREVSS). Figure 25 shows the SerDes reference clock input
requirement for AC-coupled connection scheme.
• Single-ended mode
— The reference clock can also be single-ended. The SD_REF_CLK input amplitude
(single-ended swing) must be between 400 and 800 mV peak-to-peak (from Vmin to Vmax) with
SD_REF_CLK either left unconnected or tied to ground.
— The SD_REF_CLK input average voltage must be between 200 and 400 mV. Figure 26 shows
the SerDes reference clock input requirement for the single-ended signaling mode.
— To meet the input amplitude requirement, the reference clock inputs might need to be DC or
AC coupled externally. For the best noise performance, the reference of the clock could be DC
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
39
High-Speed Serial Interfaces (HSSI)
or AC coupled into the unused phase (SD_REF_CLK) through the same source impedance as
the clock input (SD_REF_CLK) in use.
SD_REF_CLK
200 mV < Input Amplitude or Differential Peak < 800 mV
Vmax < 800 mV
100 mV < Vcm < 400 mV
Vmin > 0 V
SD_REF_CLK
Figure 24. Differential Reference Clock Input DC Requirements (External DC-Coupled)
200 mV < Input Amplitude or Differential Peak < 800 mV
SD_REF_CLK
Vmax < Vcm + 400 mV
Vcm
SD_REF_CLK
Vmin > Vcm – 400 mV
Figure 25. Differential Reference Clock Input DC Requirements (External AC-Coupled)
400 mV < SD_REF_CLK Input Amplitude < 800 mV
SD_REF_CLK
0V
SD_REF_CLK
Figure 26. Single-Ended Reference Clock Input DC Requirements
9.2.3
•
•
•
Interfacing With Other Differential Signaling Levels
With on-chip termination to XCOREVSS, the differential reference clocks inputs are HCSL
(high-speed current steering logic) compatible DC coupled.
Many other low voltage differential type outputs like LVDS (low voltage differential signaling) can
be used but may need to be AC coupled due to the limited common mode input range allowed (100
to 400 mV) for DC-coupled connection.
LVPECL outputs can produce a signal with too large of an amplitude and may need to be
DC-biased at the clock driver output first, then followed with series attenuation resistor to reduce
the amplitude, in addition to AC coupling.
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Freescale Semiconductor
High-Speed Serial Interfaces (HSSI)
NOTE
Figure 27 to Figure 30 are for conceptual reference only. Due to the fact that
the clock driver chip's internal structure, output impedance, and termination
requirements are different between various clock driver chip manufacturers,
it is possible that the clock circuit reference designs provided by clock
driver chip vendors are different from what is shown in the figures. They
might also vary from one vendor to the other. Therefore, Freescale can
neither provide the optimal clock driver reference circuits, nor guarantee the
correctness of the following clock driver connection reference circuits. It is
recommended that the system designer contact the selected clock driver
chip vendor for the optimal reference circuits for the MPC8313E SerDes
reference clock receiver requirement provided in this document.
Figure 27 shows the SerDes reference clock connection reference circuits for HCSL type clock driver. It
assumes that the DC levels of the clock driver chip is compatible with MPC8313E SerDes reference clock
input’s DC requirement.
HCSL CLK Driver Chip
CLK_Out
MPC8313E
33 Ω
SDn_REF_CLK
50 Ω
SerDes Refer.
CLK Receiver
100 Ω Differential PWB Trace
Clock Driver
33 Ω
CLK_Out
SDn_REF_CLK
SDn_REF_CLK
50 Ω
Total 50 Ω. Assume clock driver’s
output impedance is about 16 Ω.
Clock driver vendor dependent
source termination resistor
Figure 27. DC-Coupled Differential Connection with HCSL Clock Driver (Reference Only)
Figure 28 shows the SerDes reference clock connection reference circuits for LVDS type clock driver.
Since LVDS clock driver’s common mode voltage is higher than the MPC8313E SerDes reference clock
input’s allowed range (100 to 400 mV), the AC-coupled connection scheme must be used. It assumes the
LVDS output driver features a 50-Ω termination resistor. It also assumes that the LVDS transmitter
establishes its own common mode level without relying on the receiver or other external component.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
41
High-Speed Serial Interfaces (HSSI)
LVDS CLK Driver Chip
CLK_Out
MPC8313E
SDn_REF_CLK
10 nF
50 Ω
SerDes Refer.
CLK Receiver
100 Ω Differential PWB Trace
Clock Driver
CLK_Out
10 nF
SDn_REF_CLK
50 Ω
Figure 28. AC-Coupled Differential Connection with LVDS Clock Driver (Reference Only)
Figure 29 shows the SerDes reference clock connection reference circuits for LVPECL type clock driver.
Since LVPECL driver’s DC levels (both common mode voltages and output swing) are incompatible with
the MPC8313E SerDes reference clock input’s DC requirement, AC coupling has to be used. Figure 29
assumes that the LVPECL clock driver’s output impedance is 50 Ω. R1 is used to DC-bias the LVPECL
outputs prior to AC coupling. Its value could be ranged from 140 to 240 Ω depending on the clock driver
vendor’s requirement. R2 is used together with the SerDes reference clock receiver’s 50-Ω termination
resistor to attenuate the LVPECL output’s differential peak level such that it meets the MPC8313E
SerDes3 reference clock’s differential input amplitude requirement (between 200 and 800 mV differential
peak). For example, if the LVPECL output’s differential peak is 900 mV and the desired SerDes reference
clock input amplitude is selected as 600 mV, the attenuation factor is 0.67, which requires R2 = 25 Ω.
Consult with the clock driver chip manufacturer to verify whether this connection scheme is compatible
with a particular clock driver chip.
LVPECL CLK Driver Chip
MPC8313E
CLK_Out
R2
SDn_REF_CLK
10 nF
50 Ω
SerDes Refer.
CLK Receiver
R1 100 Ω Differential PWB Trace
Clock Driver
R2
10 nF
SDn_REF_CLK
CLK_Out
R1
50 Ω
Figure 29. AC-Coupled Differential Connection with LVPECL Clock Driver (Reference Only)
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
42
Freescale Semiconductor
High-Speed Serial Interfaces (HSSI)
Figure 30 shows the SerDes reference clock connection reference circuits for a single-ended clock driver.
It assumes the DC levels of the clock driver are compatible with the MPC8313E SerDes reference clock
input’s DC requirement.
Single-Ended CLK
Driver Chip
MPC8313E
Total 50 Ω. Assume clock driver’s
output impedance is about 16 Ω.
SDn_REF_CLK
33 Ω
Clock Driver
50 Ω
CLK_Out
SerDes Refer.
CLK Receiver
100 Ω Differential PWB Trace
SDn_REF_CLK
50 Ω
50 Ω
Figure 30. Single-Ended Connection (Reference Only)
9.2.4
AC Requirements for SerDes Reference Clocks
The clock driver selected should provide a high quality reference clock with low-phase noise and
cycle-to-cycle jitter. Phase noise less than 100 kHz can be tracked by the PLL and data recovery loops and
is less of a problem. Phase noise above 15 MHz is filtered by the PLL. The most problematic phase noise
occurs in the 1–15 MHz range. The source impedance of the clock driver should be 50 Ω to match the
transmission line and reduce reflections which are a source of noise to the system.
Table 40 describes some AC parameters for SGMII protocol.
Table 40. SerDes Reference Clock Common AC Parameters
At recommended operating conditions with XVDD_SRDS1 or XV DD_SRDS2 = 1.0 V ± 5%.
Parameter
Symbol
Min
Max
Unit
Notes
Rising edge rate
Rise edge rate
1.0
4.0
V/ns
2, 3
Falling edge rate
Fall edge rate
1.0
4.0
V/ns
2, 3
Differential input high voltage
VIH
+200
—
mV
2
Differential input low voltage
VIL
—
–200
mV
2
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
43
High-Speed Serial Interfaces (HSSI)
Table 40. SerDes Reference Clock Common AC Parameters (continued)
At recommended operating conditions with XVDD_SRDS1 or XV DD_SRDS2 = 1.0 V ± 5%.
Parameter
Rising edge rate (SDn_REF_CLK) to falling edge rate
(SDn_REF_CLK) matching
Symbol
Min
Max
Unit
Notes
Rise-fall
matching
—
20
%
1, 4
Notes:
1. Measurement taken from single-ended waveform.
2. Measurement taken from differential waveform.
3. Measured from –200 to +200 mV on the differential waveform (derived from SDn_REF_CLK minus SDn_REF_CLK). The
signal must be monotonic through the measurement region for rise and fall time. The 400 mV measurement window is
centered on the differential zero crossing. See Figure 31.
4. Matching applies to rising edge rate for SD n_REF_CLK and falling edge rate for SDn_REF_CLK. It is measured using a
200 mV window centered on the median cross point, where SD n_REF_CLK rising meets SDn_REF_CLK falling. The median
cross point is used to calculate the voltage thresholds the oscilloscope is to use for the edge rate calculations. The rise edge
rate of SDn_REF_CLK should be compared to the fall edge rate of SDn_REF_CLK, the maximum allowed difference should
not exceed 20% of the slowest edge rate. See Figure 32.
Rise Edge Rage
Fall Edge Rate
VIH = +200 mV
0.0 V
VIL = –200 mV
SDn_REF_CLK
Minus
SDn_REF_CLK
Figure 31. Differential Measurement Points for Rise and Fall Time
SDn_REF_CLK
SDn_REF_CLK
TFALL
TRISE
VCROSS MEDIAN + 100 mV
VCROSS MEDIAN
VCROSS MEDIAN
VCROSS MEDIAN – 100 mV
SDn_REF_CLK
SDn_REF_CLK
Figure 32. Single-Ended Measurement Points for Rise and Fall Time Matching
The other detailed AC requirements of the SerDes reference clocks is defined by each interface protocol
based on application usage. Refer to the following section for detailed information:
• Section 8.3.2, “AC Requirements for SGMII SD_REF_CLK and SD_REF_CLK
9.2.4.1
Spread Spectrum Clock
SD_REF_CLK/SD_REF_CLK are not intended to be used with, and should not be clocked by, a spread
spectrum clock source.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
44
Freescale Semiconductor
USB
9.3
SerDes Transmitter and Receiver Reference Circuits
Figure 33 shows the reference circuits for the SerDes data lane’s transmitter and receiver.
50 Ω
RXn
TXn
50 Ω
Receiver
Transmitter
50 Ω
TXn
RXn
50 Ω
Figure 33. SerDes Transmitter and Receiver Reference Circuits
The SerDes data lane’s DC and AC specifications are defined in the interface protocol section listed below
(SGMII) based on the application usage:
•
Section 8.3, “SGMII Interface Electrical Characteristics
Please note that a external AC-coupling capacitor is required for the above serial transmission protocol
with the capacitor value defined in the specifications of the protocol section.
10 USB
10.1
USB Dual-Role Controllers
This section provides the AC and DC electrical specifications for the USB interface.
10.1.1
USB DC Electrical Characteristics
Table 41 provides the DC electrical characteristics for the USB interface.
Table 41. USB DC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
High-level input voltage
VIH
2.0
LVDDB + 0.3
V
Low-level input voltage
VIL
–0.3
0.8
V
Input current
IIN
—
±5
μA
High-level output voltage, IOH = –100 μA
VOH
LVDDB – 0.2
—
V
Low-level output voltage, IOL = 100 μA
VOL
—
0.2
V
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
45
USB
10.1.2
USB AC Electrical Specifications
Table 42 describes the general timing parameters of the USB interface.
Table 42. USB General Timing Parameters (ULPI Mode Only)
Symbol1
Min
Max
Unit
tUSCK
15
—
ns
Input setup to USB clock—all inputs
tUSIVKH
4
—
ns
input hold to USB clock—all inputs
tUSIXKH
1
—
ns
USB clock to output valid—all outputs
tUSKHOV
—
7
ns
Output hold from USB clock—all outputs
tUSKHOX
2
—
ns
Parameter
USB clock cycle time
Notes
Note:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tUSIXKH symbolizes USB timing
(USB) for the input (I) to go invalid (X) with respect to the time the USB clock reference (K) goes high (H). Also, tUSKHOX
symbolizes us timing (USB) for the USB clock reference (K) to go high (H), with respect to the output (O) going invalid (X) or
output hold time.
Figure 34 and Figure 35 provide the AC test load and signals for the USB, respectively.
Z0 = 50 Ω
Output
RL = 50 Ω
NVDD/2
Figure 34. USB AC Test Load
USBDR_CLK
tUSIVKH
tUSIXKH
Input Signals
tUSKHOV
tUSKHOX
Output Signals
Figure 35. USB Signals
10.2
On-Chip USB PHY
This section describes the DC and AC electrical specifications for the on-chip USB PHY of the
MPC8313E. See Chapter 7 in the USB Specifications Rev. 2, for more information.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
46
Freescale Semiconductor
Enhanced Local Bus
Table 43 provides the USB clock input (USB_CLK_IN) DC timing specifications.
Table 43. USB_CLK_IN DC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
Input high voltage
VIH
2.7
NVDD + 0.3
V
Input low voltage
VIL
–0.3
0.4
V
Table 44 provides the USB clock input (USB_CLK_IN) AC timing specifications.
Table 44. USB_CLK_IN AC Timing Specifications
Parameter/Condition
Conditions
Symbol
Min
Typ
Max
Unit
Frequency range
—
fUSB_CLK_IN
—
24
48
MHz
Clock frequency tolerance
—
tCLK_TOL
–0.05
0
0.05
%
tCLK_DUTY
40
50
60
%
tCLK_PJ
—
—
200
ps
Reference clock duty cycle
Measured at 1.6 V
Total input jitter/time interval
error
Peak-to-peak value measured with a
second order high-pass filter of 500 kHz
bandwidth
11 Enhanced Local Bus
This section describes the DC and AC electrical specifications for the local bus interface.
11.1 Local Bus DC Electrical Characteristics
Table 45 provides the DC electrical characteristics for the local bus interface.
Table 45. Local Bus DC Electrical Characteristics at 3.3 V
Parameter
Symbol
Min
Max
Unit
High-level input voltage for Rev 1.0
VIH
2.0
LVDD + 0.3
V
High-level input voltage for Rev 2.x or later
VIH
2.1
LVDD + 0.3
V
Low-level input voltage
VIL
–0.3
0.8
V
Input current, (VIN1 = 0 V or VIN = LVDD)
IIN
—
±5
μA
High-level output voltage, (LVDD = min, IOH = –2 mA)
VOH
LVDD – 0.2
—
V
Low-level output voltage, (LVDD = min, IOH = 2 mA)
VOL
—
0.2
V
Note: The parameters stated in above table are valid for all revisions unless explicitly mentioned.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
47
Enhanced Local Bus
11.2
Local Bus AC Electrical Specifications
Table 46 describes the general timing parameters of the local bus interface.
Table 46. Local Bus General Timing Parameters
Symbol1
Min
Max
Unit
Notes
tLBK
15
—
ns
2
Input setup to local bus clock
tLBIVKH
7
—
ns
3, 4
Input hold from local bus clock
tLBIXKH
1.0
—
ns
3, 4
LALE output fall to LAD output transition (LATCH hold time)
tLBOTOT1
1.5
—
ns
5
LALE output fall to LAD output transition (LATCH hold time)
tLBOTOT2
3
—
ns
6
LALE output fall to LAD output transition (LATCH hold time)
tLBOTOT3
2.5
—
ns
7
LALE output rise to LCLK negative edge
tLALEHOV
—
3.0
ns
LALE output fall to LCLK negative edge
tLALETOT1
–1.5
—
ns
5
LALE output fall to LCLK negative edge
tLALETOT2
–5.0
—
ns
6
LALE output fall to LCLK negative edge
tLALETOT3
–4.5
—
ns
7
Local bus clock to output valid
tLBKHOV
—
3
ns
3
Local bus clock to output high impedance for LAD
tLBKHOZ
—
4
ns
8
Parameter
Local bus cycle time
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tLBIXKH1 symbolizes local bus
timing (LB) for the input (I) to go invalid (X) with respect to the time the t LBK clock reference (K) goes high (H), in this case for
clock one (1).
2. All timings are in reference to falling edge of LCLK0 (for all outputs and for LGTA and LUPWAIT inputs) or rising edge of
LCLK0 (for all other inputs).
3. All signals are measured from NVDD/2 of the rising/falling edge of LCLK0 to 0.4 × NVDD of the signal in question for 3.3-V
signaling levels.
4. Input timings are measured at the pin.
5.tLBOTOT1 and tLALETOT1 should be used when RCWH[LALE] is not set and the load on LALE output pin is at least 10 pF less
than the load on LAD output pins.
6.tLBOTOT2 and tLALETOT2 should be used when RCWH[LALE] is set and the load on LALE output pin is at least 10 pF less than
the load on LAD output pins.
7.tLBOTOT3 and tLALETOT3 should be used when RCWH[LALE] is set and the load on LALE output pin equals to the load on LAD
output pins.
8. For purposes of active/float timing measurements, the Hi-Z or off state is defined to be when the total current delivered
through the component pin is less than or equal to the leakage current specification.
Figure 36 provides the AC test load for the local bus.
Output
Z0 = 50 Ω
RL = 50 Ω
NVDD/2
Figure 36. Local Bus AC Test Load
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
48
Freescale Semiconductor
Enhanced Local Bus
Figure 37 through Figure 40 show the local bus signals.
LCLK[ n]
tLBIXKH
tLBIVKH
Input Signals:
LAD[0:15]
tLBIXKH
tLBIVKH
Input Signal:
LGTA
tLBIXKH
tLBKHOV
Output Signals:
LBCTL/LBCKE/LOE
tLBKHOV
tLBKHOZ
Output Signals:
LAD[0:15]
tLBOTOT
LALE
Figure 37. Local Bus Signals, Non-Special Signals Only
LCLK
T1
T3
tLBKHOV
tLBKHOZ
GPCM Mode Output Signals:
LCS[0:3]/LWE
tLBIVKH
tLBIXKH
UPM Mode Input Signal:
LUPWAIT
tLBIVKH
tLBIXKH
Input Signals:
LAD[0:15]
tLBKHOV
tLBKHOZ
UPM Mode Output Signals:
LCS[0:3]/LBS[0:1]/LGPL[0:5]
Figure 38. Local Bus Signals, GPCM/UPM Signals for LCCR[CLKDIV] = 2
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
49
Enhanced Local Bus
LCLK
T1
T2
T3
T4
tLBKHOZ
tLBKHOV
GPCM Mode Output Signals:
LCS[0:3]/LWE
tLBIXKH
tLBIVKH
UPM Mode Input Signal:
LUPWAIT
tLBIXKH
tLBIVKH
Input Signals:
LAD[0:15]
tLBKHOZ
tLBKHOV
UPM Mode Output Signals:
LCS[0:3]/LBS[0:1]/LGPL[0:5]
Figure 39. Local Bus Signals, GPCM/UPM Signals for LCCR[CLKDIV] = 4
LCLK[n]
t LBIXKH
t LBIVKH
Input Signals:
LAD[0:15]
tLBIXKH
t LBIVKH
Input Signal:
LGTA
tLBIXKH
Output Signals:
LBCTL/LBCKE/LOE
t LBKHOV
tLBKHOZ
t LBKHOV
Output Signals:
LAD[0:15]
t LBOTOT
t LALEHOV
t LALETOT
LALE
Figure 40. Local Bus Signals, LALE with Respect to LCLK
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
50
Freescale Semiconductor
JTAG
12 JTAG
This section describes the DC and AC electrical specifications for the IEEE Std 1149.1™ (JTAG)
interface.
12.1
JTAG DC Electrical Characteristics
Table 47 provides the DC electrical characteristics for the IEEE Std 1149.1 (JTAG) interface.
Table 47. JTAG Interface DC Electrical Characteristics
Characteristic
Symbol
Condition
Min
Max
Unit
Input high voltage
VIH
—
2.1
NVDD + 0.3
V
Input low voltage
VIL
—
–0.3
0.8
V
Input current
IIN
—
—
±5
μA
Output high voltage
VOH
IOH = –8.0 mA
2.4
—
V
Output low voltage
VOL
IOL = 8.0 mA
—
0.5
V
Output low voltage
VOL
IOL = 3.2 mA
—
0.4
V
12.2
JTAG AC Timing Specifications
This section describes the AC electrical specifications for the IEEE Std 1149.1 (JTAG) interface.
Table 48 provides the JTAG AC timing specifications as defined in Figure 42 through Figure 45.
Table 48. JTAG AC Timing Specifications (Independent of SYS_CLK_IN) 1
At recommended operating conditions (see Table 2).
Symbol2
Min
Max
Unit
JTAG external clock frequency of operation
fJTG
0
33.3
MHz
JTAG external clock cycle time
t JTG
30
—
ns
tJTKHKL
15
—
ns
tJTGR & tJTGF
0
2
ns
tTRST
25
—
ns
Boundary-scan data
TMS, TDI
tJTDVKH
tJTIVKH
4
4
—
—
Boundary-scan data
TMS, TDI
tJTDXKH
tJTIXKH
10
10
—
—
Boundary-scan data
TDO
tJTKLDV
tJTKLOV
2
2
11
11
Parameter
JTAG external clock pulse width measured at 1.4 V
JTAG external clock rise and fall times
TRST assert time
Notes
3
ns
Input setup times:
Input hold times:
4
ns
Valid times:
4
ns
5
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
51
JTAG
Table 48. JTAG AC Timing Specifications (Independent of SYS_CLK_IN)1 (continued)
At recommended operating conditions (see Table 2).
Symbol2
Min
Max
Unit
Notes
Boundary-scan data
TDO
tJTKLDX
tJTKLOX
2
2
—
—
ns
5
JTAG external clock to output high impedance:
Boundary-scan data
TDO
tJTKLDZ
tJTKLOZ
2
2
19
9
ns
5, 6
Parameter
Output hold times:
Notes:
1. All outputs are measured from the midpoint voltage of the falling/rising edge of tTCLK to the midpoint of the signal in question.
The output timings are measured at the pins. All output timings assume a purely resistive 50-Ω load (see Figure 34).
Time-of-flight delays must be added for trace lengths, vias, and connectors in the system.
2. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tJTDVKH symbolizes JTAG device
timing (JT) with respect to the time data input signals (D) reaching the valid state (V) relative to the tJTG clock reference (K)
going to the high (H) state or setup time. Also, tJTDXKH symbolizes JTAG timing (JT) with respect to the time data input signals
(D) went invalid (X) relative to the tJTG clock reference (K) going to the high (H) state. Note that, in general, the clock reference
symbol representation is based on three letters representing the clock of a particular functional. For rise and fall times, the
latter convention is used with the appropriate letter: R (rise) or F (fall).
3. TRST is an asynchronous level sensitive signal. The setup time is for test purposes only.
4. Non-JTAG signal input timing with respect to tTCLK.
5. Non-JTAG signal output timing with respect to tTCLK.
6. Guaranteed by design and characterization.
Figure 41 provides the AC test load for TDO and the boundary-scan outputs.
Z0 = 50 Ω
Output
RL = 50 Ω
NVDD/2
Figure 41. AC Test Load for the JTAG Interface
Figure 42 provides the JTAG clock input timing diagram.
JTAG
External Clock
VM
VM
VM
tJTKHKL
tJTGR
tJTGF
tJTG
VM = Midpoint Voltage (NVDD /2)
Figure 42. JTAG Clock Input Timing Diagram
Figure 43 provides the TRST timing diagram.
TRST
VM
VM
tTRST
VM = Midpoint Voltage (NVDD /2)
Figure 43. TRST Timing Diagram
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
52
Freescale Semiconductor
JTAG
Figure 44 provides the boundary-scan timing diagram.
JTAG
External Clock
VM
VM
tJTDVKH
tJTDXKH
Boundary
Data Inputs
Input
Data Valid
tJTKLDV
tJTKLDX
Boundary
Data Outputs
Output Data Valid
tJTKLDZ
Boundary
Data Outputs
Output Data Valid
VM = Midpoint Voltage (NVDD /2)
Figure 44. Boundary-Scan Timing Diagram
Figure 45 provides the test access port timing diagram.
JTAG
External Clock
VM
VM
tJTIVKH
tJTIXKH
Input
Data Valid
TDI, TMS
tJTKLOV
tJTKLOX
Output Data Valid
TDO
tJTKLOZ
TDO
Output Data Valid
VM = Midpoint Voltage (NVDD/2)
Figure 45. Test Access Port Timing Diagram
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
53
I2C
13 I2C
This section describes the DC and AC electrical characteristics for the I2C interface.
13.1
I2C DC Electrical Characteristics
Table 49 provides the DC electrical characteristics for the I2C interface.
Table 49. I2C DC Electrical Characteristics
At recommended operating conditions with NVDD of 3.3 V ± 0.3 V.
Parameter
Symbol
Min
Max
Unit
Notes
Input high voltage level
VIH
0.7 × NVDD
NVDD + 0.3
V
Input low voltage level
VIL
–0.3
0.3 × NVDD
V
Low level output voltage
VOL
0
0.2 × NVDD
V
1
Output fall time from VIH(min) to VIL(max) with a bus
capacitance from 10 to 400 pF
tI2KLKV
20 + 0.1 × CB
250
ns
2
Pulse width of spikes which must be suppressed by
the input filter
tI2KHKL
0
50
ns
3
Capacitance for each I/O pin
CI
—
10
pF
Input current, (0 V ≤ VIN ≤ NVDD)
IIN
—
±5
μA
4
Notes:
1. Output voltage (open drain or open collector) condition = 3 mA sink current.
2. CB = capacitance of one bus line in pF.
3. Refer to the MPC8313E PowerQUICC™ II Pro Integrated Processor Family Reference Manual, for information on the digital
filter used.
4. I/O pins obstruct the SDA and SCL lines if NVDD is switched off.
13.2
I2C AC Electrical Specifications
Table 50 provides the AC timing parameters for the I2C interface.
Table 50. I2C AC Electrical Specifications
All values refer to VIH (min) and VIL (max) levels (see Table 49).
Symbol1
Min
Max
Unit
SCL clock frequency
fI2C
0
400
kHz
Low period of the SCL clock
tI2CL
1.3
—
μs
High period of the SCL clock
tI2CH
0.6
—
μs
Setup time for a repeated START condition
tI2SVKH
0.6
—
μs
Hold time (repeated) START condition (after this period, the first clock
pulse is generated)
tI2SXKL
0.6
—
μs
Data setup time
tI2DVKH
100
—
ns
Parameter
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
54
Freescale Semiconductor
I2C
Table 50. I2C AC Electrical Specifications (continued)
All values refer to VIH (min) and VIL (max) levels (see Table 49).
Symbol1
Parameter
Min
Max
Unit
—
02
—
0.93
tI2CF
—
300
ns
Setup time for STOP condition
tI2PVKH
0.6
—
μs
Bus free time between a STOP and START condition
tI2KHDX
1.3
—
μs
Noise margin at the LOW level for each connected device (including
hysteresis)
VNL
0.1 × NVDD
—
V
Noise margin at the HIGH level for each connected device (including
hysteresis)
VNH
0.2 × NVDD
—
V
μs
tI2DXKL
Data hold time:
CBUS compatible masters
I2C bus devices
Fall time of both SDA and SCL signals5
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tI2DVKH symbolizes I2C timing (I2)
with respect to the time data input signals (D) reach the valid state (V) relative to the tI2C clock reference (K) going to the high
(H) state or setup time. Also, tI2SXKL symbolizes I2C timing (I2) for the time that the data with respect to the start condition
(S) went invalid (X) relative to the tI2C clock reference (K) going to the low (L) state or hold time. Also, tI2PVKH symbolizes I2C
timing (I2) for the time that the data with respect to the stop condition (P) reaching the valid state (V) relative to the tI2C clock
reference (K) going to the high (H) state or setup time. For rise and fall times, the latter convention is used with the appropriate
letter: R (rise) or F (fall).
2. The MPC8313E provides a hold time of at least 300 ns for the SDA signal (referred to the VIHmin of the SCL signal) to bridge
the undefined region of the falling edge of SCL.
3. The maximum tI2DVKH has only to be met if the device does not stretch the LOW period (tI2CL) of the SCL signal.
4. CB = capacitance of one bus line in pF.
5. The MPC8313E does not follow the I2C-BUS Specifications, Version 2.1, regarding the tI2CF AC parameter.
Figure 46 provides the AC test load for the I2C.
Z0 = 50 Ω
Output
RL = 50 Ω
NVDD/2
Figure 46. I2C AC Test Load
Figure 47 shows the AC timing diagram for the I2C bus.
SDA
tI2CF
tI2DVKH
tI2CL
tI2KHKL
tI2SXKL
tI2CF
tI2CR
SCL
tI2SXKL
tI2CH
tI2DXKL
S
tI2SVKH
Sr
tI2PVKH
P
S
Figure 47. I2C Bus AC Timing Diagram
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
55
PCI
14 PCI
This section describes the DC and AC electrical specifications for the PCI bus.
14.1
PCI DC Electrical Characteristics
Table 51 provides the DC electrical characteristics for the PCI interface.
Table 51. PCI DC Electrical Characteristics1
Parameter
Symbol
Test Condition
Min
Max
Unit
High-level input voltage
VIH
VOUT ≥ VOH (min) or
0.5 × NVDD
NVDD + 0.3
V
Low-level input voltage
VIL
VOUT ≤ VOL (max)
–0.5
0.3 × NVDD
V
High-level output voltage
VOH
NVDD = min, IOH = –100 μA
0.9 × NVDD
—
V
Low-level output voltage
VOL
NVDD = min, IOL = 100 μA
—
0.1 × NVDD
V
IIN
0 V ≤ VIN ≤ NVDD
—
±5
μA
Input current
Note:
1. Note that the symbol VIN, in this case, represents the OV IN symbol referenced in Table 1 and Table 2.
14.2
PCI AC Electrical Specifications
This section describes the general AC timing parameters of the PCI bus. Note that the PCI_CLK or
PCI_SYNC_IN signal is used as the PCI input clock depending on whether the MPC8313E is configured
as a host or agent device.
Table 52 shows the PCI AC timing specifications at 66 MHz.
.
Table 52. PCI AC Timing Specifications at 66 MHz
Symbol1
Min
Max
Unit
Notes
Clock to output valid
tPCKHOV
—
6.0
ns
2
Output hold from clock
tPCKHOX
1
—
ns
2
Clock to output high impedance
tPCKHOZ
—
14
ns
2, 3
Input setup to clock
tPCIVKH
3.0
—
ns
2, 4
Input hold from clock
tPCIXKH
0
—
ns
2, 4
Parameter
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tPCIVKH symbolizes PCI timing
(PC) with respect to the time the input signals (I) reach the valid state (V) relative to the PCI_SYNC_IN clock, tSYS, reference
(K) going to the high (H) state or setup time. Also, tPCRHFV symbolizes PCI timing (PC) with respect to the time hard reset
(R) went high (H) relative to the frame signal (F) going to the valid (V) state.
2. See the timing measurement conditions in the PCI 2.3 Local Bus Specifications.
3. For purposes of active/float timing measurements, the Hi-Z or off state is defined to be when the total current delivered
through the component pin is less than or equal to the leakage current specification.
4. Input timings are measured at the pin.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
56
Freescale Semiconductor
PCI
Table 53 shows the PCI AC timing specifications at 33 MHz.
Table 53. PCI AC Timing Specifications at 33 MHz
Symbol1
Min
Max
Unit
Notes
Clock to output valid
tPCKHOV
—
11
ns
2
Output hold from clock
tPCKHOX
2
—
ns
2
Clock to output high impedance
tPCKHOZ
—
14
ns
2, 3
Input setup to clock
tPCIVKH
3.0
—
ns
2, 4
Input hold from clock
tPCIXKH
0
—
ns
2, 4
Parameter
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tPCIVKH symbolizes PCI timing
(PC) with respect to the time the input signals (I) reach the valid state (V) relative to the PCI_SYNC_IN clock, tSYS, reference
(K) going to the high (H) state or setup time. Also, tPCRHFV symbolizes PCI timing (PC) with respect to the time hard reset
(R) went high (H) relative to the frame signal (F) going to the valid (V) state.
2. See the timing measurement conditions in the PCI 2.3 Local Bus Specifications.
3. For purposes of active/float timing measurements, the Hi-Z or off state is defined to be when the total current delivered
through the component pin is less than or equal to the leakage current specification.
4. Input timings are measured at the pin.
Figure 48 provides the AC test load for PCI.
Output
Z0 = 50 Ω
RL = 50 Ω
NVDD/2
Figure 48. PCI AC Test Load
Figure 49 shows the PCI input AC timing conditions.
CLK
tPCIVKH
tPCIXKH
Input
Figure 49. PCI Input AC Timing Measurement Conditions
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
57
Timers
Figure 50 shows the PCI output AC timing conditions.
CLK
tPCKHOV
tPCKHOX
Output Delay
tPCKHOZ
High-Impedance
Output
Figure 50. PCI Output AC Timing Measurement Condition
15 Timers
This section describes the DC and AC electrical specifications for the timers.
15.1
Timers DC Electrical Characteristics
Table 54 provides the DC electrical characteristics for the MPC8313E timers pins, including TIN, TOUT,
TGATE, and RTC_CLK.
Table 54. Timers DC Electrical Characteristics
Characteristic
Symbol
Condition
Min
Max
Unit
Output high voltage
VOH
IOH = –8.0 mA
2.4
—
V
Output low voltage
VOL
IOL = 8.0 mA
—
0.5
V
Output low voltage
VOL
IOL = 3.2 mA
—
0.4
V
Input high voltage
VIH
—
2.1
NVDD + 0.3
V
Input low voltage
VIL
—
–0.3
0.8
V
Input current
IIN
0 V ≤ VIN ≤ NVDD
—
±5
μA
Symbol2
Min
Unit
tTIWID
20
ns
15.2
Timers AC Timing Specifications
Table 55 provides the Timers input and output AC timing specifications.
Table 55. Timers Input AC Timing Specifications1
Characteristic
Timers inputs—minimum pulse width
Notes:
1. Input specifications are measured from the 50% level of the signal to the 50% level of the rising edge of SYS_CLK_IN.
Timings are measured at the pin.
2. Timers inputs and outputs are asynchronous to any visible clock. Timers outputs should be synchronized before use by any
external synchronous logic. Timers inputs are required to be valid for at least tTIWID ns to ensure proper operation
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
58
Freescale Semiconductor
GPIO
Figure 51 provides the AC test load for the Timers.
Z0 = 50 Ω
Output
RL = 50 Ω
NVDD/2
Figure 51. Timers AC Test Load
16 GPIO
This section describes the DC and AC electrical specifications for the GPIO.
16.1
GPIO DC Electrical Characteristics
Table 56 provides the DC electrical characteristics for the GPIO when the GPIO pins are operating from
a 3.3-V supply.
Table 56. GPIO (When Operating at 3.3 V) DC Electrical Characteristics 1
Characteristic
Symbol
Condition
Min
Max
Unit
Output high voltage
VOH
IOH = –8.0 mA
2.4
—
V
Output low voltage
VOL
IOL = 8.0 mA
—
0.5
V
Output low voltage
VOL
IOL = 3.2 mA
—
0.4
V
Input high voltage
VIH
—
2.0
NVDD + 0.3
V
Input low voltage
VIL
—
–0.3
0.8
V
Input current
IIN
0 V ≤ VIN ≤ NVDD
—
±5
μA
1
This specification only applies to GPIO pins that are operating from a 3.3-V supply. See Table 63 for the power supply listed
for the individual GPIO signal.
Table 57 provides the DC electrical characteristics for the GPIO when the GPIO pins are operating from
a 2.5-V supply.
Table 57. GPIO (When Operating at 2.5 V) DC Electrical Characteristics 1
Parameters
Symbol
Conditions
Min
Max
Unit
Supply voltage 2.5 V
NVDD
—
2.37
2.63
V
Output high voltage
VOH
IOH = –1.0 mA
NVDD = min
2.00
NVDD + 0.3
V
Output low voltage
VOL
IOL = 1.0 mA
NVDD = min
VSS – 0.3
0.40
V
Input high voltage
VIH
—
NVDD = min
1.7
NVDD + 0.3
V
Input low voltage
VIL
—
NVDD = min
–0.3
0.70
V
Input high current
IIH
—
10
μA
VIN = NVDD
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IPIC
Table 57. GPIO (When Operating at 2.5 V) DC Electrical Characteristics 1 (continued)
Parameters
Input low current
1
Symbol
Conditions
Min
Max
Unit
IIL
VIN = VSS
–15
—
μA
This specification only applies to GPIO pins that are operating from a 2.5-V supply. See Table 63 for the power supply listed
for the individual GPIO signal.
16.2
GPIO AC Timing Specifications
Table 58 provides the GPIO input and output AC timing specifications.
Table 58. GPIO Input AC Timing Specifications1
Characteristic
GPIO inputs—minimum pulse width
Symbol2
Min
Unit
tPIWID
20
ns
Notes:
1. Input specifications are measured from the 50% level of the signal to the 50% level of the rising edge of SYS_CLKIN. Timings
are measured at the pin.
2. GPIO inputs and outputs are asynchronous to any visible clock. GPIO outputs should be synchronized before use by any
external synchronous logic. GPIO inputs are required to be valid for at least tPIWID ns to ensure proper operation.
Figure 52 provides the AC test load for the GPIO.
Output
Z0 = 50 Ω
RL = 50 Ω
NVDD/2
Figure 52. GPIO AC Test Load
17 IPIC
This section describes the DC and AC electrical specifications for the external interrupt pins.
17.1
IPIC DC Electrical Characteristics
Table 59 provides the DC electrical characteristics for the external interrupt pins.
Table 59. IPIC DC Electrical Characteristics
Characteristic
Symbol
Condition
Min
Max
Unit
Input high voltage
VIH
—
2.1
NVDD + 0.3
V
Input low voltage
VIL
—
–0.3
0.8
V
Input current
IIN
—
—
±5
μA
Output low voltage
VOL
IOL = 8.0 mA
—
0.5
V
Output low voltage
VOL
IOL = 3.2 mA
—
0.4
V
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SPI
17.2
IPIC AC Timing Specifications
Table 60 provides the IPIC input and output AC timing specifications.
Table 60. IPIC Input AC Timing Specifications1
Characteristic
IPIC inputs—minimum pulse width
Symbol2
Min
Unit
tPIWID
20
ns
Notes:
1. Input specifications are measured from the 50% level of the signal to the 50% level of the rising edge of SYS_CLK_IN.
Timings are measured at the pin.
2. IPIC inputs and outputs are asynchronous to any visible clock. IPIC outputs should be synchronized before use by any
external synchronous logic. IPIC inputs are required to be valid for at least tPIWID ns to ensure proper operation when working
in edge triggered mode.
18 SPI
This section describes the DC and AC electrical specifications for the SPI of the MPC8313E.
18.1
SPI DC Electrical Characteristics
Table 61 provides the DC electrical characteristics for the MPC8313E SPI.
Table 61. SPI DC Electrical Characteristics
Characteristic
Symbol
Condition
Min
Max
Unit
Output high voltage
VOH
IOH = –6.0 mA
2.4
—
V
Output low voltage
VOL
IOL = 6.0 mA
—
0.5
V
Output low voltage
VOL
IOL = 3.2 mA
—
0.4
V
Input high voltage
VIH
—
2.1
NVDD + 0.3
V
Input low voltage
VIL
—
–0.3
0.8
V
Input current
IIN
0 V ≤ VIN ≤ NVDD
—
±5
μA
18.2 SPI AC Timing Specifications
Table 62 and provide the SPI input and output AC timing specifications.
Table 62. SPI AC Timing Specifications1
Symbol2
Min
Max
Unit
SPI outputs—master mode (internal clock) delay
tNIKHOV
0.5
6
ns
SPI outputs—slave mode (external clock) delay
tNEKHOV
2
8
ns
SPI inputs—master mode (internal clock) input setup time
tNIIVKH
6
—
ns
SPI inputs—master mode (internal clock) input hold time
tNIIXKH
0
—
ns
SPI inputs—slave mode (external clock) input setup time
tNEIVKH
4
—
ns
Characteristic
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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SPI
Table 62. SPI AC Timing Specifications1
Characteristic
SPI inputs—slave mode (external clock) input hold time
Symbol2
Min
Max
Unit
tNEIXKH
2
—
ns
Notes:
1. Output specifications are measured from the 50% level of the rising edge of SYS_CLK_IN to the 50% level of the signal.
Timings are measured at the pin.
2. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. For example, tNIKHOV symbolizes the NMSI
outputs internal timing (NI) for the time tSPI memory clock reference (K) goes from the high state (H) until outputs (O) are
valid (V).
Figure 53 provides the AC test load for the SPI.
Output
Z0 = 50 Ω
RL = 50 Ω
NVDD/2
Figure 53. SPI AC Test Load
Figure 54 through Figure 55 represent the AC timing from Table 62. Note that although the specifications
generally reference the rising edge of the clock, these AC timing diagrams also apply when the falling edge
is the active edge.
Figure 54 shows the SPI timing in slave mode (external clock).
SPICLK (Input)
Input Signals:
SPIMOSI
(See Note)
tNEIVKH
Output Signals:
SPIMISO
(See Note)
tNEIXKH
tNEKHOV
Note: The clock edge is selectable on SPI.
Figure 54. SPI AC Timing in Slave Mode (External Clock) Diagram
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Freescale Semiconductor
Package and Pin Listings
Figure 55 shows the SPI timing in master mode (internal clock).
SPICLK (Output)
Input Signals:
SPIMISO
(See Note)
tNIIVKH
Output Signals:
SPIMOSI
(See Note)
tNIIXKH
tNIKHOV
Note: The clock edge is selectable on SPI.
Figure 55. SPI AC Timing in Master Mode (Internal Clock) Diagram
19 Package and Pin Listings
This section details package parameters, pin assignments, and dimensions. The MPC8313E is available in
a thermally enhanced plastic ball grid array (TEPBGAII), see Section 19.1, “Package Parameters for the
MPC8313E TEPBGAII,” and Section 19.2, “Mechanical Dimensions of the MPC8313E TEPBGAII,” for
information on the TEPBGAII.
19.1
Package Parameters for the MPC8313E TEPBGAII
The package parameters are as provided in the following list. The package type is 27 mm × 27 mm,
516 TEPBGAII.
Package outline
27 mm × 27 mm
Interconnects
516
Pitch
1.00 mm
Module height (typical)
2.25 mm
Solder Balls
95.5 Sn/0.5 Cu/4 Ag (VR package),
62 Sn/36 Pb/2 Ag (ZQ package)
Ball diameter (typical)
0.6 mm
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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Package and Pin Listings
19.2
Mechanical Dimensions of the MPC8313E TEPBGAII
Figure 56 shows the mechanical dimensions and bottom surface nomenclature of the 516-TEPBGAII
package.
Notes:
1. All dimensions are in millimeters.
2. Dimensions and tolerances per ASME Y14.5M-1994.
3. Maximum solder ball diameter measured parallel to datum A.
4. Datum A, the seating plane, is determined by the spherical crowns of the solder balls.
5. Package code 5368 is to account for PGE and the built-in heat spreader.
Figure 56. Mechanical Dimension and Bottom Surface Nomenclature of the MPC8313E TEPBGAII
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Package and Pin Listings
19.3
Pinout Listings
Table 63 provides the pin-out listing for the MPC8313E, TEPBGAII package.
Table 63. MPC8313E TEPBGAII Pinout Listing
Signal
Package Pin Number
Pin Type
Power
Supply
Notes
DDR Memory Controller Interface
MEMC_MDQ0
A8
IO
GVDD
MEMC_MDQ1
A9
IO
GVDD
MEMC_MDQ2
C10
IO
GVDD
MEMC_MDQ3
C9
IO
GVDD
MEMC_MDQ4
E9
IO
GVDD
MEMC_MDQ5
E11
IO
GVDD
MEMC_MDQ6
E10
IO
GVDD
MEMC_MDQ7
C8
IO
GVDD
MEMC_MDQ8
E8
IO
GVDD
MEMC_MDQ9
A6
IO
GVDD
MEMC_MDQ10
B6
IO
GVDD
MEMC_MDQ11
C6
IO
GVDD
MEMC_MDQ12
C7
IO
GVDD
MEMC_MDQ13
D7
IO
GVDD
MEMC_MDQ14
D6
IO
GVDD
MEMC_MDQ15
A5
IO
GVDD
MEMC_MDQ16
A19
IO
GVDD
MEMC_MDQ17
D18
IO
GVDD
MEMC_MDQ18
A17
IO
GVDD
MEMC_MDQ19
E17
IO
GVDD
MEMC_MDQ20
E16
IO
GVDD
MEMC_MDQ21
C18
IO
GVDD
MEMC_MDQ22
D19
IO
GVDD
MEMC_MDQ23
C19
IO
GVDD
MEMC_MDQ24
E19
IO
GVDD
MEMC_MDQ25
A22
IO
GVDD
MEMC_MDQ26
C21
IO
GVDD
MEMC_MDQ27
C20
IO
GVDD
MEMC_MDQ28
A21
IO
GVDD
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Package and Pin Listings
Table 63. MPC8313E TEPBGAII Pinout Listing (continued)
Package Pin Number
Pin Type
Power
Supply
MEMC_MDQ29
A20
IO
GVDD
MEMC_MDQ30
C22
IO
GVDD
MEMC_MDQ31
B22
IO
GVDD
MEMC_MDM0
B7
O
GVDD
MEMC_MDM1
E6
O
GVDD
MEMC_MDM2
E18
O
GVDD
MEMC_MDM3
E20
O
GVDD
MEMC_MDQS0
A7
IO
GVDD
MEMC_MDQS1
E7
IO
GVDD
MEMC_MDQS2
B19
IO
GVDD
MEMC_MDQS3
A23
IO
GVDD
MEMC_MBA0
D15
O
GVDD
MEMC_MBA1
A18
O
GVDD
MEMC_MBA2
A15
O
GVDD
MEMC_MA0
E12
O
GVDD
MEMC_MA1
D11
O
GVDD
MEMC_MA2
B11
O
GVDD
MEMC_MA3
A11
O
GVDD
MEMC_MA4
A12
O
GVDD
MEMC_MA5
E13
O
GVDD
MEMC_MA6
C12
O
GVDD
MEMC_MA7
E14
O
GVDD
MEMC_MA8
B15
O
GVDD
MEMC_MA9
C17
O
GVDD
MEMC_MA10
C13
O
GVDD
MEMC_MA11
A16
O
GVDD
MEMC_MA12
C15
O
GVDD
MEMC_MA13
C16
O
GVDD
MEMC_MA14
E15
O
GVDD
MEMC_MWE
B18
O
GVDD
MEMC_MRAS
C11
O
GVDD
MEMC_MCAS
B10
O
GVDD
Signal
Notes
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Freescale Semiconductor
Package and Pin Listings
Table 63. MPC8313E TEPBGAII Pinout Listing (continued)
Package Pin Number
Pin Type
Power
Supply
MEMC_MCS0
D10
O
GVDD
MEMC_MCS1
A10
O
GVDD
MEMC_MCKE
B14
O
GVDD
MEMC_MCK
A13
O
GVDD
MEMC_MCK
A14
O
GVDD
MEMC_MODT0
B23
O
GVDD
MEMC_MODT1
C23
O
GVDD
Signal
Notes
3
Local Bus Controller Interface
LAD0
K25
IO
LVDD
LAD1
K24
IO
LVDD
LAD2
K23
IO
LVDD
LAD3
K22
IO
LVDD
LAD4
J25
IO
LVDD
LAD5
J24
IO
LVDD
LAD6
J23
IO
LVDD
LAD7
J22
IO
LVDD
LAD8
H24
IO
LVDD
LAD9
F26
IO
LVDD
LAD10
G24
IO
LVDD
LAD11
F25
IO
LVDD
LAD12
E25
IO
LVDD
LAD13
F24
IO
LVDD
LAD14
G22
IO
LVDD
LAD15
F23
IO
LVDD
LA16
AC25
O
LVDD
LA17
AC26
O
LVDD
LA18
AB22
O
LVDD
LA19
AB23
O
LVDD
LA20
AB24
O
LVDD
LA21
AB25
O
LVDD
LA22
AB26
O
LVDD
LA23
E22
O
LVDD
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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Package and Pin Listings
Table 63. MPC8313E TEPBGAII Pinout Listing (continued)
Package Pin Number
Pin Type
Power
Supply
LA24
E23
O
LVDD
LA25
D22
O
LVDD
LCS0
D23
O
LVDD
LCS1
J26
O
LVDD
LCS2
F22
O
LVDD
LCS3
D26
O
LVDD
LWE0/LFWE
E24
O
LVDD
LWE1
H26
O
LVDD
LBCTL
L22
O
LVDD
LALE/M1LALE/M2LALE
E26
O
LVDD
LGPL0/LFCLE
AA23
O
LVDD
LGPL1/LFALE
AA24
O
LVDD
LGPL2/LOE/LFRE
AA25
O
LVDD
LGPL3/LFWP
AA26
O
LVDD
LGPL4/LGTA/LUPWAIT/LFRB
Y22
IO
LVDD
LGPL5
E21
O
LVDD
LCLK0
H22
O
LVDD
LCLK1
G26
O
LVDD
LA0/GPIO0/MSRCID0
AC24
IO
LVDD
LA1/GPIO1//MSRCID1
Y24
IO
LVDD
LA2/GPIO2//MSRCID2
Y26
IO
LVDD
LA3/GPIO3//MSRCID3
W22
IO
LVDD
LA4/GPIO4//MSRCID4
W24
IO
LVDD
LA5/GPIO5/MDVAL
W26
IO
LVDD
LA6/GPIO6
V22
IO
LVDD
LA7/GPIO7/TSEC_1588_TRIG2
V23
IO
LVDD
8
LA8/GPIO13/TSEC_1588_ALARM1
V24
IO
LVDD
8
LA9/GPIO14/TSEC_1588_PP3
V25
IO
LVDD
8
LA10/TSEC_1588_CLK
V26
O
LVDD
8
LA11/TSEC_1588_GCLK
U22
O
LVDD
8
LA12/TSEC_1588_PP1
AD24
O
LVDD
8
LA13/TSEC_1588_PP2
L25
O
LVDD
8
Signal
Notes
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Freescale Semiconductor
Package and Pin Listings
Table 63. MPC8313E TEPBGAII Pinout Listing (continued)
Package Pin Number
Pin Type
Power
Supply
Notes
LA14/TSEC_1588_TRIG1
L24
O
LVDD
8
LA15/TSEC_1588_ALARM2
K26
O
LVDD
8
UART_SOUT1/MSRCID0
N2
O
NVDD
UART_SIN1/MSRCID1
M5
IO
NVDD
UART_CTS1/GPIO8/MSRCID2
M1
IO
NVDD
UART_RTS1/GPIO9/MSRCID3
K1
IO
NVDD
UART_SOUT2/MSRCID4/TSEC_1588_CLK
M3
O
NVDD
8
UART_SIN2/MDVAL/TSEC_1588_GCLK
L1
IO
NVDD
8
UART_CTS2/TSEC_1588_PP1
L5
IO
NVDD
8
UART_RTS2/TSEC_1588_PP2
L3
IO
NVDD
8
IIC1_SDA/CKSTOP_OUT/TSEC_1588_TRIG1
J4
IO
NVDD
2, 8
IIC1_SCL/CKSTOP_IN/TSEC_1588_ALARM2
J2
IO
NVDD
2, 8
IIC2_SDA/PMC_PWR_OK/GPIO10
J3
IO
NVDD
2
IIC2_SCL/GPIO11
H5
IO
NVDD
2
MCP_OUT
G5
O
NVDD
2
IRQ0/MCP_IN
K5
I
NVDD
IRQ1
K4
I
NVDD
IRQ2
K2
I
NVDD
IRQ3/CKSTOP_OUT
K3
IO
NVDD
IRQ4/CKSTOP_IN/GPIO12
J1
IO
NVDD
CFG_CLKIN_DIV
D5
I
NVDD
EXT_PWR_CTRL
J5
O
NVDD
R24
I
NVDD
TCK
E1
I
NVDD
TDI
E2
I
NVDD
4
TDO
E3
O
NVDD
3
Signal
DUART
I2C interface
Interrupts
Configuration
CFG_LBIU_MUX_EN
JTAG
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
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Package and Pin Listings
Table 63. MPC8313E TEPBGAII Pinout Listing (continued)
Package Pin Number
Pin Type
Power
Supply
Notes
TMS
E4
I
NVDD
4
TRST
E5
I
NVDD
4
F4
I
NVDD
6
F5
O
NVDD
HRESET
F2
IO
NVDD
PORESET
F3
I
NVDD
SRESET
F1
I
NVDD
SYS_CR_CLK_IN
U26
I
NVDD
SYS_CR_CLK_OUT
U25
O
NVDD
SYS_CLK_IN
U23
I
NVDD
USB_CR_CLK_IN
T26
I
NVDD
USB_CR_CLK_OUT
R26
O
NVDD
USB_CLK_IN
T22
I
NVDD
PCI_SYNC_OUT
U24
O
NVDD
RTC_PIT_CLOCK
R22
I
NVDD
PCI_SYNC_IN
T24
I
NVDD
THERM0
N1
I
NVDD
7
THERM1
N3
I
NVDD
7
AF7
O
NVDD
PCI_RESET_OUT
AB11
O
NVDD
PCI_AD0
AB20
IO
NVDD
PCI_AD1
AF23
IO
NVDD
PCI_AD2
AF22
IO
NVDD
PCI_AD3
AB19
IO
NVDD
PCI_AD4
AE22
IO
NVDD
PCI_AD5
AF21
IO
NVDD
Signal
TEST
TEST_MODE
DEBUG
QUIESCE
System Control
1
Clocks
3
MISC
PCI
PCI_INTA
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Package and Pin Listings
Table 63. MPC8313E TEPBGAII Pinout Listing (continued)
Package Pin Number
Pin Type
Power
Supply
PCI_AD6
AD19
IO
NVDD
PCI_AD7
AD20
IO
NVDD
PCI_AD8
AC18
IO
NVDD
PCI_AD9
AD18
IO
NVDD
PCI_AD10
AB18
IO
NVDD
PCI_AD11
AE19
IO
NVDD
PCI_AD12
AB17
IO
NVDD
PCI_AD13
AE18
IO
NVDD
PCI_AD14
AD17
IO
NVDD
PCI_AD15
AF19
IO
NVDD
PCI_AD16
AB14
IO
NVDD
PCI_AD17
AF15
IO
NVDD
PCI_AD18
AD14
IO
NVDD
PCI_AD19
AE14
IO
NVDD
PCI_AD20
AF12
IO
NVDD
PCI_AD21
AE11
IO
NVDD
PCI_AD22
AD12
IO
NVDD
PCI_AD23
AB13
IO
NVDD
PCI_AD24
AF9
IO
NVDD
PCI_AD25
AD11
IO
NVDD
PCI_AD26
AE10
IO
NVDD
PCI_AD27
AB12
IO
NVDD
PCI_AD28
AD10
IO
NVDD
PCI_AD29
AC10
IO
NVDD
PCI_AD30
AF10
IO
NVDD
PCI_AD31
AF8
IO
NVDD
PCI_C/BE0
AC19
IO
NVDD
PCI_C/BE1
AB15
IO
NVDD
PCI_C/BE2
AF14
IO
NVDD
PCI_C/BE3
AF11
IO
NVDD
PCI_PAR
AD16
IO
NVDD
PCI_FRAME
AF16
IO
NVDD
Signal
Notes
5
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Package and Pin Listings
Table 63. MPC8313E TEPBGAII Pinout Listing (continued)
Package Pin Number
Pin Type
Power
Supply
Notes
PCI_TRDY
AD13
IO
NVDD
5
PCI_IRDY
AC15
IO
NVDD
5
PCI_STOP
AF13
IO
NVDD
5
PCI_DEVSEL
AC14
IO
NVDD
5
PCI_IDSEL
AF20
I
NVDD
PCI_SERR
AE15
IO
NVDD
5
PCI_PERR
AD15
IO
NVDD
5
PCI_REQ0
AB10
IO
NVDD
PCI_REQ1/CPCI_HS_ES
AD9
I
NVDD
PCI_REQ2
AD8
I
NVDD
PCI_GNT0
AC11
IO
NVDD
PCI_GNT1/CPCI_HS_LED
AE7
O
NVDD
PCI_GNT2/CPCI_HS_ENUM
AD7
O
NVDD
M66EN
AD21
I
NVDD
PCI_CLK0
AF17
O
NVDD
PCI_CLK1
AB16
O
NVDD
PCI_CLK2
AF18
O
NVDD
PCI_PME
AD22
IO
NVDD
Signal
ETSEC1/_USBULPI
TSEC1_COL/USBDR_TXDRXD0
AD2
IO
LVDDB
TSEC1_CRS/USBDR_TXDRXD1
AC3
IO
LVDDB
TSEC1_GTX_CLK/USBDR_TXDRXD2
AF3
IO
LVDDB
TSEC1_RX_CLK/USBDR_TXDRXD3
AE3
IO
LVDDB
TSEC1_RX_DV/USBDR_TXDRXD4
AD3
IO
LVDDB
TSEC1_RXD3/USBDR_TXDRXD5
AC6
IO
LVDDB
TSEC1_RXD2/USBDR_TXDRXD6
AF4
IO
LVDDB
TSEC1_RXD1/USBDR_TXDRXD7
AB6
IO
LVDDB
TSEC1_RXD0/USBDR_NXT/TSEC_1588_TRIG1
AB5
I
LVDDB
TSEC1_RX_ER/USBDR_DIR/TSEC_1588_TRIG2
AD4
I
LVDDB
TSEC1_TX_CLK/USBDR_CLK/TSEC_1588_CLK
AF5
I
LVDDB
TSEC1_TXD3/TSEC_1588_GCLK
AE6
O
LVDDB
TSEC1_TXD2/TSEC_1588_PP1
AC7
O
LVDDB
3
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
72
Freescale Semiconductor
Package and Pin Listings
Table 63. MPC8313E TEPBGAII Pinout Listing (continued)
Package Pin Number
Pin Type
Power
Supply
TSEC1_TXD1/TSEC_1588_PP2
AD6
O
LVDDB
TSEC1_TXD0/USBDR_STP/TSEC_1588_PP3
AD5
O
LVDDB
TSEC1_TX_EN/TSEC_1588_ALARM1
AB7
O
LVDDB
TSEC1_TX_ER/TSEC_1588_ALARM2
AB8
O
LVDDB
TSEC1_GTX_CLK125
AE1
I
LVDDB
TSEC1_MDC/LB_POR_CFG_BOOT_ECC_DIS
AF6
O
NVDD
9
TSEC1_MDIO
AB9
IO
NVDD
2
TSEC2_COL/GTM1_TIN4/GTM2_TIN3/GPIO15
AB4
IO
LVDDA
TSEC2_CRS/GTM1_TGATE4/GTM2_TGATE3/GPIO16
AB3
IO
LVDDA
TSEC2_GTX_CLK/GTM1_TOUT4/GTM2_TOUT3/GPIO17
AC1
IO
LVDDA
TSEC2_RX_CLK/GTM1_TIN2/GTM2_TIN1/GPIO18
AC2
IO
LVDDA
TSCE2_RX_DV/GTM1_TGATE2/GTM2_TGATE1/GPIO19
AA3
IO
LVDDA
TSEC2_RXD3/GPIO20
Y5
IO
LVDDA
TSEC2_RXD2/GPIO21
AA4
IO
LVDDA
TSEC2_RXD1/GPIO22
AB2
IO
LVDDA
TSEC2_RXD0/GPIO23
AA5
IO
LVDDA
TSEC2_RX_ER/GTM1_TOUT2/GTM2_TOUT1/GPIO24
AA2
IO
LVDDA
TSEC2_TX_CLK/GPIO25
AB1
IO
LVDDA
TSEC2_TXD3/CFG_RESET_SOURCE0
W3
IO
LVDDA
TSEC2_TXD2/CFG_RESET_SOURCE1
Y1
IO
LVDDA
TSEC2_TXD1/CFG_RESET_SOURCE2
W5
IO
LVDDA
TSEC2_TXD0/CFG_RESET_SOURCE3
Y3
IO
LVDDA
TSEC2_TX_EN/GPIO26
AA1
IO
LVDDA
TSEC2_TX_ER/GPIO27
W1
IO
LVDDA
TXA
U3
O
TXA
V3
O
RXA
U1
I
RXA
V1
I
TXB
P4
O
TXB
N4
O
Signal
Notes
ETSEC2
SGMII PHY
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
73
Package and Pin Listings
Table 63. MPC8313E TEPBGAII Pinout Listing (continued)
Signal
Power
Supply
Package Pin Number
Pin Type
RXB
R1
I
RXB
P1
I
SD_IMP_CAL_RX
V5
I
SD_REF_CLK
T5
I
SD_REF_CLK
T4
I
SD_PLL_TPD
T2
O
SD_IMP_CAL_TX
N5
I
SDAVDD
R5
IO
SD_PLL_TPA_ANA
R4
O
SDAVSS
R3
IO
USB_DP
P26
IO
USB_DM
N26
IO
USB_VBUS
P24
IO
USB_TPA
L26
IO
USB_RBIAS
M24
IO
USB_PLL_PWR3
M26
IO
USB_PLL_GND
N24
IO
USB_PLL_PWR1
N25
IO
USB_VSSA_BIAS
M25
IO
USB_VDDA_BIAS
M22
IO
USB_VSSA
N22
IO
USB_VDDA
P22
IO
USBDR_DRIVE_VBUS/GTM1_TIN1/GTM2_TIN2/LSRCID0
AD23
IO
NVDD
USBDR_PWRFAULT/GTM1_TGATE1/GTM2_TGATE2/
LSRCID1
AE23
IO
NVDD
USBDR_PCTL0/GTM1_TOUT1/LSRCID2
AC22
O
NVDD
USBDR_PCTL1/LBC_PM_REF_10/LSRCID3
AB21
O
NVDD
H1
IO
NVDD
Notes
200 Ω to
GND
100 Ω to
GND
USB PHY
GTM/USB
SPI
SPIMOSI/GTM1_TIN3/GTM2_TIN4/GPIO28/LSRCID4
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
74
Freescale Semiconductor
Package and Pin Listings
Table 63. MPC8313E TEPBGAII Pinout Listing (continued)
Package Pin Number
Pin Type
Power
Supply
SPIMISO/GTM1_TGATE3/GTM2_TGATE4/GPIO29/
LDVAL
H3
IO
NVDD
SPICLK/GTM1_TOUT3/GPIO30
G1
IO
NVDD
SPISEL/GPIO31
G3
IO
NVDD
Signal
Notes
Power and Ground Supplies
AVDD1
F14
Power for e300
core APLL
(1.0 V)
—
AVDD2
P21
Power for
system APLL
(1.0 V)
—
GV DD
A2,A3,A4,A24,A25,B3,
B4,B5,B12,B13,B20,B21,
B24,B25,B26,D1,D2,D8,
D9,D16,D17
Power for
DDR1 and
DDR2 DRAM
I/O voltage
(1.8/2.5 V)
—
LVDD
D24,D25,G23,H23,R23, Power for local
T23,W25,Y25,AA22,AC23
bus (3.3 V)
—
LVDDA
W2,Y2
Power for
eTSEC2
(2.5 V, 3.3 V)
—
LVDDB
AC8,AC9,AE4,AE5
Power for
eTSEC1/
USB DR
(2.5 V, 3.3 V)
—
MV REF
C14,D14
Reference
voltage signal
for DDR
—
G4,H4,L2,M2,AC16,AC17, Standard I/O
AD25,AD26,AE12,AE13, voltage (3.3 V)
AE20,AE21,AE24,AE25,
AE26,AF24,AF25
—
NVDD
VDD
K11,K12,K13,K14,K15,
K16,L10,L17,M10,M17,
N10,N17,U12,U13,
Power for core
(1.0 V)
—
VDDC
F6,F10,F19,K6,K10,K17,
K21,P6,P10,P17,R10,R17,
T10,T17,U10,U11,U14,
U15,U16,U17,W6,W21,
AA6,AA10,AA14,AA19
Internal core
logic constant
power (1.0 V)
—
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
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Package and Pin Listings
Table 63. MPC8313E TEPBGAII Pinout Listing (continued)
Package Pin Number
Pin Type
Power
Supply
B1,B2,B8,B9,B16,B17,C1,
C2,C3,C4,C5,C24,C25,
C26,D3,D4,D12,D13,D20,
D21,F8,F11,F13,F16,F17,
F21,G2,G25,H2,H6,H21,
H25,L4,L6,L11,L12,L13,
L14,L15,L16,L21,L23,M4,
M11,M12,M13,M14,M15,
M16,M23,N6,N11,N12,
N13,N14,N15,N16,
N21,N23,P11,P12,P13,
P14,P15,P16,P23,P25,
R11,R12,R13,R14,R15,
R16,R25,T6,T11,T12,T13,
T14,T15,T16,T21,T25,U5,
U6,U21,W4,W23,Y4,Y23,
AA8,AA11,AA13,AA16,
AA17,AA21,AC4,AC5,
AC12,AC13,AC20,AC21,
AD1,AE2,AE8,AE9,AE16,
AE17,AF2
—
—
XCOREV DD
T1,U2,V2
Core power for
SerDes
transceivers
(1.0 V)
—
XCOREV SS
P2,R2,T3
—
—
XPADVDD
P5,U4
Pad power for
SerDes
transceivers
(1.0 V)
—
XPADVSS
P3,V4
—
—
Signal
VSS
Notes
Notes:
1. This pin is an open drain signal. A weak pull-up resistor (1 kΩ) should be placed on this pin to NVDD.
2. This pin is an open drain signal. A weak pull-up resistor (2–10 kΩ) should be placed on this pin to NVDD.
3. This output is actively driven during reset rather than being three-stated during reset.
4. These JTAG pins have weak internal pull-up P-FETs that are always enabled.
5. This pin should have a weak pull up if the chip is in PCI host mode. Follow PCI specifications recommendation.
6. This pin must always be tied to VSS.
7. Internal thermally sensitive resistor, resistor value varies linearly with temperature. Useful for determining the junction
temperature.
8. 1588 signals are available on these pins only in MPC8313 Rev 2.x or later.
9. LB_POR_CFG_BOOT_ECC_DIS is available only in MPC8313 Rev 2.x or later.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
76
Freescale Semiconductor
Clocking
20 Clocking
Figure 57 shows the internal distribution of clocks within the MPC8313E.
MPC8313E
e300c3 Core
core_clk
Core PLL
USB Mac
x M1
USB PHY
PLL
mux
To DDR
Memory
Controller
csb_clk
DDR
Clock
Divider
/2
USB_CLK_IN
USB_CR_CLK_IN
ddr_clk
xL
Crystal
USB_CR_CLK_OUT
/1,/2
MEMC_MCK
MEMC_MCK
DDR
Memory
Device
2
System
PLL
Clock
Unit
lbc_clk
/n
To Local Bus
LCLK[0:1]
LBC
Clock
Divider
csb_clk to Rest
of the Device
CFG_CLKIN_DIV
Local Bus
Memory
Device
PCI_CLK/
PCI_SYNC_IN
SYS_CLK_IN
SYS_CR_CLK_IN
1
0
Crystal
PCI_SYNC_OUT
PCI Clock
Divider (÷2)
SYS_CR_CLK_OUT
GTX_CLK125
125-MHz Source
3
eTSEC
Protocol
Converter
RTC
Sys Ref
1
2
PCI_CLK_OUT[0:2]
RTC_CLK (32 kHz)
Multiplication factor M = 1, 1.5, 2, 2.5, and 3. Value is decided by RCWLR[COREPLL].
Multiplication factor L = 2, 3, 4, 5, and 6. Value is decided by RCWLR[SPMF].
Figure 57. MPC8313E Clock Subsystem
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
77
Clocking
The primary clock source for the MPC8313E can be one of two inputs, SYS_CLK_IN or PCI_CLK,
depending on whether the device is configured in PCI host or PCI agent mode. When the device is
configured as a PCI host device, SYS_CLK_IN is its primary input clock. SYS_CLK_IN feeds the PCI
clock divider (÷2) and the multiplexors for PCI_SYNC_OUT and PCI_CLK_OUT. The
CFG_CLKIN_DIV configuration input selects whether SYS_CLK_IN or SYS_CLK_IN/2 is driven out
on the PCI_SYNC_OUT signal. The OCCR[PCICOEn] parameters select whether the PCI_SYNC_OUT
is driven out on the PCI_CLK_OUTn signals.
PCI_SYNC_OUT is connected externally to PCI_SYNC_IN to allow the internal clock subsystem to
synchronize to the system PCI clocks. PCI_SYNC_OUT must be connected properly to PCI_SYNC_IN,
with equal delay to all PCI agent devices in the system, to allow the device to function. When the device
is configured as a PCI agent device, PCI_CLK is the primary input clock. When the device is configured
as a PCI agent device the SYS_CLK_IN signal should be tied to VSS.
As shown in Figure 57, the primary clock input (frequency) is multiplied up by the system phase-locked
loop (PLL) and the clock unit to create the coherent system bus clock (csb_clk), the internal clock for the
DDR controller (ddr_clk), and the internal clock for the local bus interface unit (lbc_clk).
The csb_clk frequency is derived from a complex set of factors that can be simplified into the following
equation:
csb_clk = {PCI_SYNC_IN × (1 + ~CFG_CLKIN_DIV)} × SPMF
In PCI host mode, PCI_SYNC_IN × (1 + ~CFG_CLKIN_DIV) is the SYS_CLK_IN frequency.
The csb_clk serves as the clock input to the e300 core. A second PLL inside the e300 core multiplies up
the csb_clk frequency to create the internal clock for the e300 core (core_clk). The system and core PLL
multipliers are selected by the SPMF and COREPLL fields in the reset configuration word low (RCWL)
which is loaded at power-on reset or by one of the hard-coded reset options. See Chapter 4, “Reset,
Clocking, and Initialization,” in the MPC8313E PowerQUICC II Pro Integrated Processor Family
Reference Manual, for more information on the clock subsystem.
The internal ddr_clk frequency is determined by the following equation:
ddr_clk = csb_clk × (1 + RCWL[DDRCM])
Note that ddr_clk is not the external memory bus frequency; ddr_clk passes through the DDR clock divider
(÷2) to create the differential DDR memory bus clock outputs (MCK and MCK). However, the data rate
is the same frequency as ddr_clk.
The internal lbc_clk frequency is determined by the following equation:
lbc_clk = csb_clk × (1 + RCWL[LBCM])
Note that lbc_clk is not the external local bus frequency; lbc_clk passes through the a LBC clock divider
to create the external local bus clock outputs (LCLK[0:1]). The LBC clock divider ratio is controlled by
LCCR[CLKDIV].
In addition, some of the internal units may be required to be shut off or operate at lower frequency than
the csb_clk frequency. Those units have a default clock ratio that can be configured by a memory mapped
register after the device comes out of reset. Table 64 specifies which units have a configurable clock
frequency.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
78
Freescale Semiconductor
Clocking
Table 64. Configurable Clock Units
Default
Frequency
Unit
Options
TSEC1
csb_clk
Off, csb_clk, csb_clk/2, csb_clk/3
TSEC2
csb_clk
Off, csb_clk, csb_clk/2, csb_clk/3
Security Core, I2C, SAP, TPR
csb_clk
Off, csb_clk, csb_clk/2, csb_clk/3
USB DR
csb_clk
Off, csb_clk, csb_clk/2, csb_clk/3
PCI and DMA complex
csb_clk
Off, csb_clk
Table 65 provides the operating frequencies for the MPC8313E TEPBGAII under recommended operating
conditions (see Table 2).
Table 65. Operating Frequencies for TEPBGAII
Maximum
Operating Frequency
Unit
e300 core frequency (core_clk)
333
MHz
Coherent system bus frequency (csb_clk)
167
MHz
DDR1/2 memory bus frequency (MCK)2
167
MHz
66
MHz
66
MHz
Characteristic1
Local bus frequency
(LCLKn)3
PCI input frequency (SYS_CLK_IN or PCI_CLK)
Notes:
1. The SYS_CLK_IN frequency, RCWL[SPMF], and RCWL[COREPLL] settings must be
chosen such that the resulting csb_clk, MCK, LCLK[0:1], and core_clk frequencies do not
exceed their respective maximum or minimum operating frequencies. The value of
SCCR[ENCCM] and SCCR[USBDRCM] must be programmed such that the maximum
internal operating frequency of the security core and USB modules do not exceed their
respective value listed in this table.
2. The DDR data rate is 2x the DDR memory bus frequency.
3. The local bus frequency is 1/2, 1/4, or 1/8 of the lbc_clk frequency (depending on
LCCR[CLKDIV]), which is in turn, 1x or 2x the csb_clk frequency (depending on
RCWL[LBCM]).
20.1
System PLL Configuration
The system PLL is controlled by the RCWL[SPMF] parameter. Table 66 shows the multiplication factor
encodings for the system PLL.
Table 66. System PLL Multiplication Factors
RCWL[SPMF]
System PLL
Multiplication Factor
0000
Reserved
0001
Reserved
0010
×2
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
79
Clocking
Table 66. System PLL Multiplication Factors (continued)
RCWL[SPMF]
System PLL
Multiplication Factor
0011
×3
0100
×4
0101
×5
0110
×6
0111–1111
Reserved
As described in Section 20, “Clocking,” the LBCM, DDRCM, and SPMF parameters in the reset
configuration word low and the CFG_CLKIN_DIV configuration input signal select the ratio between the
primary clock input (SYS_CLK_IN or PCI_SYNC_IN) and the internal coherent system bus clock
(csb_clk). Table 67 shows the expected frequency values for the CSB frequency for select csb_clk to
SYS_CLK_IN/PCI_SYNC_IN ratios.
Table 67. CSB Frequency Options
Input Clock Frequency (MHz)2
CFG_CLKIN_DIV
at Reset1
SPMF
csb_clk :Input
Clock Ratio2
24
25
33.33
66.67
csb_clk Frequency (MHz)
1
2
High
0010
2:1
High
0011
3:1
High
0100
4:1
High
0101
5:1
High
0110
6:1
Low
0010
2:1
Low
0011
3:1
Low
0100
4:11
Low
0101
5:1
Low
0110
6:1
133
100
100
133
120
125
167
144
150
133
100
100
133
120
125
167
144
150
CFG_CLKIN_DIV select the ratio between SYS_CLK_IN and PCI_SYNC_OUT.
SYS_CLK_IN is the input clock in host mode; PCI_CLK is the input clock in agent mode.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
80
Freescale Semiconductor
Clocking
20.2
Core PLL Configuration
RCWL[COREPLL] selects the ratio between the internal coherent system bus clock (csb_clk) and the e300
core clock (core_clk). Table 68 shows the encodings for RCWL[COREPLL]. COREPLL values that are
not listed in Table 68 should be considered as reserved.
NOTE
Core VCO frequency = core frequency × VCO divider. The VCO divider,
which is determined by RCWLR[COREPLL], must be set properly so that
the core VCO frequency is in the range of 400–800 MHz.
Table 68. e300 Core PLL Configuration
RCWL[COREPLL]
core_clk : csb_clk Ratio1
VCO Divider (VCOD)2
0–1
2–5
6
nn
0000
0
PLL bypassed
(PLL off, csb_clk clocks core directly)
PLL bypassed
(PLL off, csb_clk clocks core directly)
11
nnnn
n
n/a
n/a
00
0001
0
1:1
2
01
0001
0
1:1
4
10
0001
0
1:1
8
00
0001
1
1.5:1
2
01
0001
1
1.5:1
4
10
0001
1
1.5:1
8
00
0010
0
2:1
2
01
0010
0
2:1
4
10
0010
0
2:1
8
00
0010
1
2.5:1
2
01
0010
1
2.5:1
4
10
0010
1
2.5:1
8
00
0011
0
3:1
2
01
0011
0
3:1
4
10
0011
0
3:1
8
1
For core_clk:csb_clk ratios of 2.5:1 and 3:1, the core_clk must not exceed its maximum operating frequency of
333 MHz.
2 Core VCO frequency = core frequency × VCO divider. Note that VCO divider has to be set properly so that the core
VCO frequency is in the range of 400–800 MHz.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
81
Thermal
20.3
Example Clock Frequency Combinations
Table 69 shows several possible frequency combinations that can be selected based on the indicated input
reference frequencies, with RCWLR[LBCM] = 0 and RCWLR[DDRCM] =1, such that the LBC operates
with a frequency equal to the frequency of csb_clk and the DDR controller operates at twice the frequency
of csb_clk.
Table 69. System Clock Frequencies
LBC(lbc_clk)
SYS_
CSB
DDR
CLK_IN/ SPMF 1 VCOD 2 VCO3
(csb_clk)4 (ddr_clk)
PCI_CLK
1
2
3
4
5
6
e300 Core(core_clk)
/2
/4
/8
USB
ref5
×1
× 1.5
×2
× 2.5
×3
—
37.5
18.8
Note 6
150.0
225
300
375
—
62.5 31.25 15.6
Note 6
125.0
188
250
313
375
41.63 20.8
Note 6
166.5
250
333
—
—
25.0
6
2
600.0
150.0
300.0
25.0
5
2
500.0
125.0
250.0
33.3
5
2
666.0
166.5
333.0
—
33.3
4
2
532.8
133.2
266.4
66.6
33.3
16.7
Note 6
133.2
200
266
333
400
48.0
3
2
576.0
144.0
288.0
—
36
18.0
48.0
144.0
216
288
360
—
66.7
2
2
533.4
133.3
266.7
Note 6
133.3
200
267
333
400
66.7 33.34 16.7
System PLL multiplication factor.
System PLL VCO divider.
When considering operating frequencies, the valid core VCO operating range of 400–800 MHz must not be violated.
Due to erratum eTSEC40, csb_clk frequencies of less than 133 MHz do not support gigabit Ethernet data rates. The core
frequency must be 333 MHz for gigabit Ethernet operation. This erratum will be fixed in revision 2 silicon.
Frequency of USB PLL input reference.
USB reference clock must be supplied from a separate source as it must be 24 or 48 MHz, the USB reference must be
supplied from a separate external source using USB_CLK_IN.
21 Thermal
This section describes the thermal specifications of the MPC8313E.
21.1
Thermal Characteristics
Table 70 provides the package thermal characteristics for the 516, 27 × 27 mm TEPBGAII.
Table 70. Package Thermal Characteristics for TEPBGAII
Characteristic
Board Type
Symbol
TEPBGA II
Unit
Notes
Junction-to-ambient natural convection
Single layer board (1s)
RθJA
25
°C/W
1, 2
Junction-to-ambient natural convection
Four layer board (2s2p)
RθJA
18
°C/W
1, 2, 3
Junction-to-ambient (@200 ft/min)
Single layer board (1s)
RθJMA
20
°C/W
1, 3
Junction-to-ambient (@200 ft/min)
Four layer board (2s2p)
RθJMA
15
°C/W
1, 3
—
RθJB
10
°C/W
4
Junction-to-board
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
82
Freescale Semiconductor
Thermal
Table 70. Package Thermal Characteristics for TEPBGAII (continued)
Characteristic
Junction-to-case
Junction-to-package top
Board Type
Symbol
TEPBGA II
Unit
Notes
—
RθJC
8
°C/W
5
Natural convection
ΨJT
7
°C/W
6
Notes:
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, airflow, power dissipation of other components on the board, and board thermal
resistance.
2. Per JEDEC JESD51-2 with the single layer board horizontal. Board meets JESD51-9 specification.
3. Per JEDEC JESD51-6 with the board horizontal.
4. Thermal resistance between the die and the printed-circuit board per JEDEC JESD51-8. Board temperature is measured on
the top surface of the board near the package.
5. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method
1012.1).
6. Thermal characterization parameter indicating the temperature difference between package top and the junction temperature
per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written as Psi-JT.
21.2
Thermal Management Information
For the following sections, PD = (VDD × IDD) + PI/O, where PI/O is the power dissipation of the I/O drivers.
21.2.1
Estimation of Junction Temperature with Junction-to-Ambient
Thermal Resistance
An estimation of the chip junction temperature, TJ, can be obtained from the equation:
TJ = TA + (RθJA × PD)
where:
TJ = junction temperature (°C)
TA = ambient temperature for the package (°C)
RθJA = junction-to-ambient thermal resistance (°C/W)
PD = power dissipation in the package (W)
The junction-to-ambient thermal resistance is an industry standard value that provides a quick and easy
estimation of thermal performance. As a general statement, the value obtained on a single layer board is
appropriate for a tightly packed printed-circuit board. The value obtained on the board with the internal
planes is usually appropriate if the board has low power dissipation and the components are well separated.
Test cases have demonstrated that errors of a factor of two (in the quantity TJ – TA) are possible.
21.2.2
Estimation of Junction Temperature with Junction-to-Board
Thermal Resistance
The thermal performance of a device cannot be adequately predicted from the junction-to-ambient thermal
resistance. The thermal performance of any component is strongly dependent on the power dissipation of
surrounding components. In addition, the ambient temperature varies widely within the application. For
many natural convection and especially closed box applications, the board temperature at the perimeter
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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Thermal
(edge) of the package is approximately the same as the local air temperature near the device. Specifying
the local ambient conditions explicitly as the board temperature provides a more precise description of the
local ambient conditions that determine the temperature of the device.
At a known board temperature, the junction temperature is estimated using the following equation:
TJ = TB + (RθJB × PD)
where:
TJ = junction temperature (°C)
TB = board temperature at the package perimeter (°C)
RθJB = junction-to-board thermal resistance (°C/W) per JESD51–8
PD = power dissipation in the package (W)
When the heat loss from the package case to the air can be ignored, acceptable predictions of junction
temperature can be made. The application board should be similar to the thermal test condition: the
component is soldered to a board with internal planes.
21.2.3
Experimental Determination of Junction Temperature
To determine the junction temperature of the device in the application after prototypes are available, the
thermal characterization parameter (ΨJT) can be used to determine the junction temperature with a
measurement of the temperature at the top center of the package case using the following equation:
TJ = TT + (ΨJT × PD)
where:
TJ = junction temperature (°C)
TT = thermocouple temperature on top of package (°C)
ΨJT = thermal characterization parameter (°C/W)
PD = power dissipation in the package (W)
The thermal characterization parameter is measured per JESD51-2 specification using a 40 gauge type T
thermocouple epoxied to the top center of the package case. The thermocouple should be positioned so
that the thermocouple junction rests on the package. A small amount of epoxy is placed over the
thermocouple junction and over about 1 mm of wire extending from the junction. The thermocouple wire
is placed flat against the package case to avoid measurement errors caused by cooling effects of the
thermocouple wire.
21.2.4
Heat Sinks and Junction-to-Case Thermal Resistance
In some application environments, a heat sink is required to provide the necessary thermal management of
the device. When a heat sink is used, the thermal resistance is expressed as the sum of a junction to case
thermal resistance and a case to ambient thermal resistance:
RθJA = RθJC + RθCA
where:
RθJA = junction-to-ambient thermal resistance (°C/W)
RθJC = junction-to-case thermal resistance (°C/W)
RθCA = case-to- ambient thermal resistance (°C/W)
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Thermal
RθJC is device related and cannot be influenced by the user. The user controls the thermal environment to
change the case-to-ambient thermal resistance, RθCA. For instance, the user can change the size of the heat
sink, the airflow around the device, the interface material, the mounting arrangement on the printed-circuit
board, or change the thermal dissipation on the printed-circuit board surrounding the device.
To illustrate the thermal performance of the devices with heat sinks, the thermal performance has been
simulated with a few commercially available heat sinks. The heat sink choice is determined by the
application environment (temperature, airflow, adjacent component power dissipation) and the physical
space available. Because there is not a standard application environment, a standard heat sink is not
required.
Table 71. Thermal Resistance for TEPBGAII with Heat Sink in Open Flow
Heat Sink Assuming Thermal Grease
Airflow
Thermal Resistance
(°C/W)
Wakefield 53 × 53 × 2.5 mm pin fin
Natural convection
13.0
0.5 m/s
10.6
1 m/s
9.7
2 m/s
9.2
4 m/s
8.9
Natural convection
14.4
0.5 m/s
11.3
1 m/s
10.5
2 m/s
9.9
4 m/s
9.4
Natural convection
16.5
0.5 m/s
13.5
1 m/s
12.1
2 m/s
10.9
4 m/s
10.0
Natural convection
14.5
0.5 m/s
11.7
1 m/s
10.5
2 m/s
9.7
4 m/s
9.2
Aavid 35 × 31 × 23 mm pin fin
Aavid 30 × 30 × 9.4 mm pin fin
Aavid 43 × 41 × 16.5 mm pin fin
Accurate thermal design requires thermal modeling of the application environment using computational
fluid dynamics software which can model both the conduction cooling and the convection cooling of the
air moving through the application. Simplified thermal models of the packages can be assembled using the
junction-to-case and junction-to-board thermal resistances listed in Table 71. More detailed thermal
models can be made available on request.
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Thermal
Heat sink Vendors include the following list:
Aavid Thermalloy
80 Commercial St.
Concord, NH 03301
Internet: www.aavidthermalloy.com
Alpha Novatech
473 Sapena Ct. #12
Santa Clara, CA 95054
Internet: www.alphanovatech.com
International Electronic Research Corporation (IERC)
413 North Moss St.
Burbank, CA 91502
Internet: www.ctscorp.com
Millennium Electronics (MEI)
Loroco Sites
671 East Brokaw Road
San Jose, CA 95112
Internet: www.mei-thermal.com
Tyco Electronics
Chip Coolers™
P.O. Box 3668
Harrisburg, PA 17105
Internet: www.chipcoolers.com
Wakefield Engineering
33 Bridge St.
Pelham, NH 03076
Internet: www.wakefield.com
Interface material vendors include the following:
Chomerics, Inc.
77 Dragon Ct.
Woburn, MA 01801
Internet: www.chomerics.com
Dow-Corning Corporation
Corporate Center
PO BOX 994
Midland, MI 48686-0994
Internet: www.dowcorning.com
Shin-Etsu MicroSi, Inc.
10028 S. 51st St.
Phoenix, AZ 85044
Internet: www.microsi.com
603-224-9988
408-749-7601
818-842-7277
408-436-8770
800-522-6752
603-635-2800
781-935-4850
800-248-2481
888-642-7674
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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Thermal
The Bergquist Company
18930 West 78th St.
Chanhassen, MN 55317
Internet: www.bergquistcompany.com
21.3
800-347-4572
Heat Sink Attachment
When attaching heat sinks to these devices, an interface material is required. The best method is to use
thermal grease and a spring clip. The spring clip should connect to the printed-circuit board, either to the
board itself, to hooks soldered to the board, or to a plastic stiffener. Avoid attachment forces which would
lift the edge of the package or peel the package from the board. Such peeling forces reduce the solder joint
lifetime of the package. Recommended maximum force on the top of the package is 10 lb (4.5 kg) force.
If an adhesive attachment is planned, the adhesive should be intended for attachment to painted or plastic
surfaces and its performance verified under the application requirements.
21.3.1
Experimental Determination of the Junction Temperature with a
Heat Sink
When heat sink is used, the junction temperature is determined from a thermocouple inserted at the
interface between the case of the package and the interface material. A clearance slot or hole is normally
required in the heat sink. Minimizing the size of the clearance is important to minimize the change in
thermal performance caused by removing part of the thermal interface to the heat sink. Because of the
experimental difficulties with this technique, many engineers measure the heat sink temperature and then
back calculate the case temperature using a separate measurement of the thermal resistance of the
interface. From this case temperature, the junction temperature is determined from the junction to case
thermal resistance.
TJ = TC + (RθJC x PD)
where:
TJ = junction temperature (°C)
TC = case temperature of the package
RθJC = junction-to-case thermal resistance
PD = power dissipation
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System Design Information
22 System Design Information
This section provides electrical and thermal design recommendations for successful application of the
MPC8313E SYS_CLK_IN
22.1
System Clocking
The MPC8313E includes three PLLs.
1. The platform PLL (AVDD2) generates the platform clock from the externally supplied
SYS_CLK_IN input in PCI host mode or SYS_CLK_IN/PCI_SYNC_IN in PCI agent mode. The
frequency ratio between the platform and SYS_CLK_IN is selected using the platform PLL ratio
configuration bits as described in Section 20.1, “System PLL Configuration.”
2. The e300 core PLL (AVDD1) generates the core clock as a slave to the platform clock. The
frequency ratio between the e300 core clock and the platform clock is selected using the e300
PLL ratio configuration bits as described in Section 20.2, “Core PLL Configuration.”
3. There is a PLL for the SerDes block.
22.2
PLL Power Supply Filtering
Each of the PLLs listed above is provided with power through independent power supply pins (AVDD1,
AVDD2, and SDAVDD, respectively). The AVDD level should always be equivalent to VDD, and preferably
these voltages are derived directly from VDD through a low frequency filter scheme such as the following.
There are a number of ways to reliably provide power to the PLLs, but the recommended solution is to
provide independent filter circuits as illustrated in Figure 58, one to each of the five AVDD pins. By
providing independent filters to each PLL the opportunity to cause noise injection from one PLL to the
other is reduced.
This circuit is intended to filter noise in the PLLs resonant frequency range from a 500 kHz to 10 MHz
range. It should be built with surface mount capacitors with minimum effective series inductance (ESL).
Consistent with the recommendations of Dr. Howard Johnson in High Speed Digital Design: A Handbook
of Black Magic (Prentice Hall, 1993), multiple small capacitors of equal value are recommended over a
single large value capacitor.
Each circuit should be placed as close as possible to the specific AVDD pin being supplied to minimize
noise coupled from nearby circuits. It should be possible to route directly from the capacitors to the AV DD
pin, which is on the periphery of package, without the inductance of vias.
Figure 58 shows the PLL power supply filter circuits.
V DD
1.0 Ω
AV DD1 and AVDD2
2.2 µF
2.2 µF
Low ESL Surface Mount Capacitors
Figure 58. PLL Power Supply Filter Circuit
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System Design Information
The SDAVDD signal provides power for the analog portions of the SerDes PLL. To ensure stability of the
internal clock, the power supplied to the PLL is filtered using a circuit like the one shown in Figure 59.
For maximum effectiveness, the filter circuit should be placed as closely as possible to the SDAVDD ball
to ensure it filters out as much noise as possible. The ground connection should be near the SDAVDD ball.
The 0.003-µF capacitor is closest to the ball, followed by the two 2.2-µF capacitors, and finally the 1-Ω
resistor to the board supply plane. The capacitors are connected from traces from SDAVDD to the ground
plane. Use ceramic chip capacitors with the highest possible self-resonant frequency. All traces should be
kept short, wide, and direct.
1.0 Ω
XCOREV DD
SDAVDD
1
2.2 µF
2.2
µF 1
0.003 µF
Note:
1. An 0805 sized capacitor is recommended for system initial bring-up.
SDAVSS
Figure 59. SerDes PLL Power Supply Filter Circuit
Note the following:
• SDAVDD should be a filtered version of XCOREVDD.
• Output signals on the SerDes interface are fed from the XPADVDD power plane. Input signals and
sensitive transceiver analog circuits are on the XCOREVDD supply.
• Power: XPADVDD consumes less than 300 mW; XCOREVDD + SDAVDD consumes less than
750 mW.
22.3
Decoupling Recommendations
Due to large address and data buses, and high operating frequencies, the device can generate transient
power surges and high frequency noise in its power supply, especially while driving large capacitive loads.
This noise must be prevented from reaching other components in the MPC8313E system, and the
MPC8313E itself requires a clean, tightly regulated source of power. Therefore, it is recommended that
the system designer place at least one decoupling capacitor at each VDD, NVDD, GVDD, LVDD, LVDDA,
and LVDDB pin of the device. These decoupling capacitors should receive their power from separate VDD,
NVDD, GVDD, LVDD, LVDDA, LVDDB, and VSS power planes in the PCB, utilizing short traces to
minimize inductance. Capacitors may be placed directly under the device using a standard escape pattern.
Others may surround the part.
These capacitors should have a value of 0.01 or 0.1 µF. Only ceramic SMT (surface mount technology)
capacitors should be used to minimize lead inductance, preferably 0402 or 0603 sizes.
In addition, it is recommended that there be several bulk storage capacitors distributed around the PCB,
feeding the VDD, NVDD, GVDD, LVDD, LVDDA, and LVDDB planes, to enable quick recharging of the
smaller chip capacitors. These bulk capacitors should have a low ESR (equivalent series resistance) rating
to ensure the quick response time necessary. They should also be connected to the power and ground
planes through two vias to minimize inductance. Suggested bulk capacitors—100 to 330 µF (AVX TPS
tantalum or Sanyo OSCON). However, customers should work directly with their power regulator vendor
for best values and types of bulk capacitors.
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System Design Information
22.4
SerDes Block Power Supply Decoupling Recommendations
The SerDes block requires a clean, tightly regulated source of power (XCOREVDD and XPADVDD) to
ensure low jitter on transmit and reliable recovery of data in the receiver. An appropriate decoupling
scheme is outlined below.
Only SMT capacitors should be used to minimize inductance. Connections from all capacitors to power
and ground should be done with multiple vias to further reduce inductance.
• First, the board should have at least 10 × 10-nF SMT ceramic chip capacitors as close as possible
to the supply balls of the device. Where the board has blind vias, these capacitors should be placed
directly below the chip supply and ground connections. Where the board does not have blind vias,
these capacitors should be placed in a ring around the device as close to the supply and ground
connections as possible.
• Second, there should be a 1-µF ceramic chip capacitor from each SerDes supply (XCOREVDD and
XPADVDD) to the board ground plane on each side of the device. This should be done for all
SerDes supplies.
• Third, between the device and any SerDes voltage regulator there should be a 10-µF, low
equivalent series resistance (ESR) SMT tantalum chip capacitor and a 100-µF, low ESR SMT
tantalum chip capacitor. This should be done for all SerDes supplies.
22.5
Connection Recommendations
To ensure reliable operation, it is highly recommended to connect unused inputs to an appropriate signal
level. Unused active low inputs should be tied to NVDD, GVDD, LVDD, LVDDA, or LVDDB as required.
Unused active high inputs should be connected to VSS. All NC (no-connect) signals must remain
unconnected.
Power and ground connections must be made to all external VDD, NVDD, GVDD, LVDD, LVDDA, LVDDB,
and VSS pins of the device.
22.6
Output Buffer DC Impedance
The MPC8313E drivers are characterized over process, voltage, and temperature. For all buses, the driver
is a push-pull single-ended driver type (open drain for I2C).
To measure Z0 for the single-ended drivers, an external resistor is connected from the chip pad to NVDD
or VSS. Then, the value of each resistor is varied until the pad voltage is NVDD/2 (see Figure 60). The
output impedance is the average of two components, the resistances of the pull-up and pull-down devices.
When data is held high, SW1 is closed (SW2 is open), and RP is trimmed until the voltage at the pad equals
NVDD/2. RP then becomes the resistance of the pull-up devices. RP and RN are designed to be close to each
other in value. Then, Z0 = (RP + RN)/2.
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System Design Information
NVDD
RN
SW2
Pad
Data
SW1
RP
VSS
Figure 60. Driver Impedance Measurement
The value of this resistance and the strength of the driver’s current source can be found by making two
measurements. First, the output voltage is measured while driving logic 1 without an external differential
termination resistor. The measured voltage is V1 = Rsource × Isource. Second, the output voltage is measured
while driving logic 1 with an external precision differential termination resistor of value R term. The
measured voltage is V2 = (1/(1/R1 + 1/R2)) × Isource. Solving for the output impedance gives Rsource =
Rterm × (V1/V2 – 1). The drive current is then Isource = V1/Rsource.
Table 72 summarizes the signal impedance targets. The driver impedance are targeted at minimum VDD,
nominal NVDD, 105°C.
Table 72. Impedance Characteristics
Impedance
Local Bus, Ethernet,
DUART, Control,
Configuration, Power
Management
PCI Signals
(Not Including PCI
Output Clocks)
PCI Output Clocks
(Including
PCI_SYNC_OUT)
DDR DRAM
Symbol
Unit
RN
42 Target
25 Target
42 Target
20 Target
Z0
Ω
RP
42 Target
25 Target
42 Target
20 Target
Z0
Ω
Differential
NA
NA
NA
NA
ZDIFF
Ω
Note: Nominal supply voltages. See Table 1, TJ = 105°C.
22.7
Configuration Pin Muxing
The MPC8313E provides the user with power-on configuration options which can be set through the use
of external pull-up or pull-down resistors of 4.7 kΩ on certain output pins (see customer visible
configuration pins). These pins are generally used as output only pins in normal operation.
While HRESET is asserted however, these pins are treated as inputs. The value presented on these pins
while HRESET is asserted, is latched when PORESET deasserts, at which time the input receiver is
disabled and the I/O circuit takes on its normal function. Careful board layout with stubless connections
to these pull-up/pull-down resistors coupled with the large value of the pull-up/pull-down resistor should
minimize the disruption of signal quality or speed for output pins thus configured.
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System Design Information
22.8
Pull-Up Resistor Requirements
The MPC8313E requires high resistance pull-up resistors (10 kΩ is recommended) on open drain type pins
including I2C, Ethernet management MDIO, and IPIC (integrated programmable interrupt controller).
Correct operation of the JTAG interface requires configuration of a group of system control pins as
demonstrated in Figure 61. Care must be taken to ensure that these pins are maintained at a valid deasserted
state under normal operating conditions because most have asynchronous behavior and spurious assertion,
which give unpredictable results.
Refer to the PCI 2.2 Specification, for all pull-ups required for PCI.
22.9
JTAG Configuration Signals
Boundary scan testing is enabled through the JTAG interface signals. The TRST signal is optional in
IEEE 1149.1, but is provided on any Freescale devices that are built on Power Architecture technology.
The device requires TRST to be asserted during reset conditions to ensure the JTAG boundary logic does
not interfere with normal chip operation. While it is possible to force the TAP controller to the reset state
using only the TCK and TMS signals, systems generally assert TRST during power-on reset. Because the
JTAG interface is also used for accessing the common on-chip processor (COP) function, simply tying
TRST to PORESET is not practical.
The COP function of these processors allows a remote computer system (typically, a PC with dedicated
hardware and debugging software) to access and control the internal operations of the processor. The COP
interface connects primarily through the JTAG port of the processor, with some additional status
monitoring signals. The COP port requires the ability to independently assert TRST without causing
PORESET. If the target system has independent reset sources, such as voltage monitors, watchdog timers,
power supply failures, or push-button switches, then the COP reset signals must be merged into these
signals with logic.
The arrangement shown in Figure 61 allows the COP to independently assert HRESET or TRST, while
ensuring that the target can drive HRESET as well. If the JTAG interface and COP header are not used,
TRST should be tied to PORESET so that it is asserted when the system reset signal (PORESET) is
asserted.
The COP header shown in Figure 61 adds many benefits—breakpoints, watchpoints, register and memory
examination/modification, and other standard debugger features are possible through this interface—and
can be as inexpensive as an unpopulated footprint for a header to be added when needed.
The COP interface has a standard header for connection to the target system, based on the 0.025"
square-post, 0.100" centered header assembly (often called a Berg header).
There is no standardized way to number the COP header shown in Figure 61; consequently, many different
pin numbers have been observed from emulator vendors. Some are numbered top-to-bottom then
left-to-right, while others use left-to-right then top-to-bottom, while still others number the pins counter
clockwise from pin 1 (as with an IC). Regardless of the numbering, the signal placement recommended in
Figure 61 is common to all known emulators.
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System Design Information
PORESET
PORESET
From Target
Board Sources
(if any)
SRESET
SRESET
HRESET
HRESET
13
11
10 kΩ
HRESET
SRESET
NVDD
NVDD
10 kΩ
NVDD
10 kΩ
NVDD
1
2
3
4
5
6
7
8
9
10
11
12
4
TRST
VDD_SENSE
61
5
15
10 kΩ
TRST
2 kΩ
NVDD
NC
CHKSTP_OUT
CHKSTP_OUT
10 kΩ
NVDD
14 2
KEY
13 No pin
16
COP Connector
Physical Pin Out
NVDD
CHKSTP_IN
COP Header
15
10 kΩ
CHKSTP_IN
8
TMS
9
1
3
TMS
TDO
TDI
TDO
TDI
TCK
7
TCK
2
NC
10
NC
12
NC
16
Notes:
1. Some systems require power to be fed from the application board into the debugger repeater card
via the COP header. In this case the resistor value for VDD_SENSE should be around 20 Ω.
2. Key location; pin 14 is not physically present on the COP header.
Figure 61. JTAG Interface Connection
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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Document Revision History
23 Document Revision History
Table 73 provides a revision history for this hardware specification.
Table 73. Document Revision History
Rev.
Number
Date
2.1
12/2008
• Added Figure 2, after Table 2 and renumbered the following figures.
2
10/2008
• Added Note “The information in this document is accurate for revision 1.0, and 2.x and later. See
Section 24.1, “Part Numbers Fully Addressed by this Document,” before Section 1, “Overview.”
• Added part numbering details for all the silicon revisions in Table 74.
• Changed VIH from 2.7 V to 2.4 V in Table 7.
• Added a row for V IH level for Rev 2.x or later in Table 45.
• Added a column for maximum power dissipation in low power mode for Rev 2.x or later silicon in
Table 6.
• Added a column for Power Nos for Rev 2.x or later silicon and added a row for 400 MHz in Table 4.
• Removed footnote, “These are preliminary estimates.” from Table 4.
• Added Table 21 for DDR AC Specs on Rev 2.x or later silicon.
• Added Section 9, “High-Speed Serial Interfaces (HSSI).”
• Added LFWE, LFCLE, LFALE, LOE, LFRE, LFWP, LGTA, LUPWAIT, and LFRB in Table 63.
• In Table 39, added note 2: “This parameter is dependent on the csb_clk speed. (The MIIMCFG[Mgmt
Clock Select] field determines the clock frequency of the Mgmt Clock EC_MDC.)”
• Removed mentions of SGMII (SGMII has separate specs) from Section 8.1, “Enhanced
Three-Speed Ethernet Controller (eTSEC) (10/100/1000 Mbps)—MII/RMII/RGMII/SGMII/RTBI
Electrical Characteristics.”
• Corrected Section 8.1, “Enhanced Three-Speed Ethernet Controller (eTSEC)
(10/100/1000 Mbps)—MII/RMII/RGMII/SGMII/RTBI Electrical Characteristics,” to state that
RGMII/RTBI interfaces only operate at 2.5 V, not 3.3 V.
• Added ZQ package to ordering information In Table 74 and Section 19.1, “Package Parameters for
the MPC8313E TEPBGAII” (applicable to both silicon rev. 1.0 and 2.1)
• Removed footnotes 5 and 6 from Table 1 (left over when the PCI undershoot/overshoot voltages and
maximum AC waveforms were removed from Section 2.1.2, “Power Supply Voltage Specification”).
• Removed SD_PLL_TPD (T2) and SD_PLL_TPA_ANA (R4) from Table 63.
• Added Section 8.3, “SGMII Interface Electrical Characteristics.” Removed Section 8.5.3 SGMII DC
Electrical Characteristics.
• Removed “HRESET negation to SRESET negation (output)” spec and changed “HRESET/SRESET
assertion (output)” spec to “HRESET assertion (output)” in Table 10.
• Clarified POR configuration signal specs to “Time for the device to turn off POR configuration signal
drivers with respect to the assertion of HRESET” and “Time for the device to turn on POR
configuration signal drivers with respect to the negation of HRESET” in Table 10.
• Added Section 24.2, “Part Marking,” and Figure 62.
Substantive Change(s)
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Document Revision History
Table 73. Document Revision History (continued)
Rev.
Number
Date
1
3/2008
Substantive Change(s)
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Replaced OVDD with NVDD everywhere
Added XCOREVDD and XPADVDD to Table 1
Moved VDD and VDDC to the top of the table before SerDes supplies in Table 2
In Table 2 split DDR row into two from total current requirement of 425 mA. One for DDR1 (131 mA)
and other for DDR2 (140 mA).
In Table 2 corrected current requirement numbers for NV DD from 27 mA to 74 mA, LV DD from 60 mA
to 16 mA, LVDDA from 85 mA to 22 mA and LVDDB from 85 mA to 44 mA.
In Table 2 corrected Vdd and Vddc current requirements from 560 mA and 454 mA to 469 and
377 mA, respectively. Corrected Avdd1 and Avdd2 current requirements from 10 mA to 2–3 mA, and
XCOREVDD from 100 mA to 170 mA.
In Table 2, added row stating junction temperature range of 0 to 105•C.
C. Added footnote 2 stating
GPIO pins may operate from 2.5-V supply as well when configured for different functionality.
In Section 2.1.2, “Power Supply Voltage Specification,” added a note describing the purpose of
Table 2.
In Section 3, “Power Characteristics,” added a note describing the purpose of Table 5.
Rewrote Section 2.2, “Power Sequencing,” and added Figure 3.
In Table 4, added “but do include core, USB PLL, and a portion of SerDes digital power...” to Note 1.
In Table 4 corrected “Typical power” to “Maximum power” in note 2 and added a note for Typical
Power.
In Table 4 removed 266-MHz row as 266-MHz core parts are not offered.
In Table 5, moved Local bus typical power dissipation under LVdd.
Added Table 6 to show the low power mode power dissipation for D3warm mode.
In Table 8 corrected SYS_CLK_IN frequency range from 25–66 MHz to 24–66.67 MHz.
Added Section 8.4, “eTSEC IEEE 1588 AC Specifications”
In Table 42 changed minimum value of USB input hold tUSIXKH from 0 to 1ns
Added Table 43 and Table 44 showing USB clock in specifications
In Table 46, added rows for tLALEHOV, tLALETOT1, tLALETOT2, and tLALETOT3 parameters. Added
Figure 40.
In Table 50, removed row for rise time (tI2CR). Removed minimum value of tI2CF. Added note 5 stating
that the device does not follow the I2C-BUS Specifications version 2.1 regarding the tI2CF AC
parameter.
In Table 56, added a note stating: “This specification only applies to GPIO pins that are operating
from a 3.3-V supply. See Table 63 for the power supply listed for the individual GPIO signal.” [
Added Table 57 to show DC characteristics for GPIO pins supplied by a 2.5-V supply. Same as
eTSEC DC characteristics when operating at 2.5 V.
In Section 20, “Clocking,” corrected the sentence “When the device is configured as a PCI agent
device, PCI_SYNC_IN is the primary input clock.” to state “When the device is configured as a PCI
agent device, PCI_CLK is the primary input clock.”
Added “Value is decided by RCWLR[COREPLL]” to note 1 of Figure 57
Added paragraph and Figure 59 to Section 22.2, “PLL Power Supply Filtering.”
Added Section 22.4, “SerDes Block Power Supply Decoupling Recommendations
Removed the two figures on PCI undershoot/overshoot voltages and maximum AC waveforms from
Section 2.1.2, “Power Supply Voltage Specification,”
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
95
Document Revision History
Table 73. Document Revision History (continued)
Rev.
Number
Date
1
3/2008
Substantive Change(s)
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
In Table 63, added LBC_PM_REF_10 & LSRCID3 as muxed with USBDR_PCTL1
In Table 63, added LSRCID2 as muxed with USBDR_PCTL0
In Table 63, added LSRCID1 as muxed with USBDR_PWRFAULT
In Table 63, added LSRCID0 as muxed with USBDR_DRIVE_VBUS
In Table 63, moved T1, U2,& V2 from VDD to XCOREVDD.
In Table 63, moved P2, R2, & T3 from VSS to XCOREVSS.
In Table 63, moved P5, & U4 from VDD to XPADVDD.
In Table 63, moved P3, & V4 from VSS to XPADVSS.
In Table 63, removed “Double with pad” for AVDD1 and AVDD2 and moved AVDD1 and AVDD2 to Power
and Ground Supplies section
In Table 63, added impedance control requirements for SD_IMP_CAL_TX (100 ohms to GND) and
SD_IMP_CAL_RX (200 ohms to GND).
In Table 63, updated muxing in pinout to show new options for selecting IEEE 1588 functionality.
Added footnote 8
In Table 63, updated muxing in pinout to show new LBC ECC boot enable control muxed with
eTSEC1_MDC
Added pin type information for power supplies.
Removed N1 and N3 from Vss section of Table 63. Added Therm0 and Therm1 (N1 and N3,
respectively). Added note 7 to state: “Internal thermally sensitive resistor, resistor value varies
linearly with temperature. Useful for determining the junction temperature.”
In Table 65 corrected maximum frequency of Local Bus Frequency from “33–66” to 66 MHz
In Table 65 corrected maximum frequency of PCI from “24–66” to 66 MHz
Added “which is determined by RCWLR[COREPLL],” to the note in Section 20.2, “Core PLL
Configuration” about the VCO divider.
• Added “(VCOD)” next to VCO divider column in Table 68. Added footnote stating that core_clk
frequency must not exceed its maximum, so 2.5:1 and 3:1 core_clk:csb_clk ratios are invalid for
certain csb_clk values.
• In Table 69, notes were confusing. Added note 3 for VCO column, note 4 for CSB (csb_clk) column,
note 5 for USB ref column, and note 6 to replace “Note 1”. Clarified note 4 to explain erratum
eTSEC40.
• In Table 69, updated note 6 to specify USB reference clock frequencies limited to 24 and 48 for rev.
2 silicon.
• Replaced Table 71 “Thermal Resistance for TEPBGAII with Heat Sink in Open Flow”.
• Removed last row of Table 19.
• Removed 200 MHz rows from Table 21 and Table 5.
• Changed VIH minimum spec from 2.0 to 2.1 for clock, PIC, JTAG, SPI, and reset pins in Table 9,
Table 47, Table 54, Table 59, and Table 61.
• Added Figure 4 showing the DDR input timing diagram.
• In Table 19, removed “MDM” from the “MDQS-MDQ/MECC/MDM” text under the Parameter
column for the tCISKEW parameter. MDM is an output signal and should be removed from
the input AC timing spec table (tCISKEW).
• Added “and power” to rows 2 and 3 in Table 10
• Added the sentence “Once both the power supplies...” and PORESET to Section 2.2, “Power
Sequencing,” and Figure 3.
• In Figure 35, corrected “USB0_CLK/USB1_CLK/DR_CLK” with “USBDR_CLK”
• In Table 42, clarified that AC specs are for ULPI only.
0
6/2007
Initial release.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
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Freescale Semiconductor
Ordering Information
24 Ordering Information
Ordering information for the parts fully covered by this specification document is provided in
Section 24.1, “Part Numbers Fully Addressed by this Document.”
24.1 Part Numbers Fully Addressed by this Document
Table 74 provides the Freescale part numbering nomenclature for the MPC8313E. Note that the individual
part numbers correspond to a maximum processor core frequency. For available frequencies, contact your
local Freescale sales office. In addition to the processor frequency, the part numbering scheme also
includes an application modifier which may specify special application conditions. Each part number also
contains a revision code which refers to the die mask revision number.
Table 74. Part Numbering Nomenclature
MPC
nnnn
e
t
pp
aa
a
x
Product
Code
Part
Identifier
Encryption
Acceleration
Temperature
Range 3
Package 1
e300 core
Frequency 2
DDR
Frequency
Revision
Level
MPC
8313
F = 333 MHz
D = 266 MHz
Blank = 1.0
A = 2.0
B = 2.1
Blank = Not
included
E = included
Blank = 0° to 105°C ZQ = PB
C= –40° to 105°C
TEPBGAII
VR = PB free
TEPBGAII
AF = 333 MHz
GD = 400 MHz
Notes:
1. See Section 19, “Package and Pin Listings,” for more information on available package types.
2. Processor core frequencies supported by parts addressed by this specification only. Not all parts described in this
specification support all core frequencies. Additionally, parts addressed by Part Number Specifications may support other
maximum core frequencies.
3. Contact local Freescale office on availability of parts with °C temperature range.
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
97
Ordering Information
24.2
Part Marking
Parts are marked as shown in Figure 62.
MPCnnnnetppaaar
core/ddr MHz
ATWLYYWW
CCCCC
MMMMM YWWLAZ
TePBGA
Notes:
MPCnnnnetppaar is the orderable part number.
ATWLYYWW is the standard assembly, test, year, and work week codes.
CCCCC is the country code.
MMMMM is the mask number.
Figure 62. Part Marking for TEPBGAII Device
MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
98
Freescale Semiconductor
Ordering Information
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MPC8313E PowerQUICC ™ II Pro Processor Hardware Specifications, Rev. 2.1
Freescale Semiconductor
99
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Document Number: MPC8313EEC
Rev. 2.1
12/2008