DMN601VK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Case: SOT-563 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (Approximate) SOT-563 ESD Protected up to 2kV TOP VIEW D2 G1 S1 S2 G2 D1 TOP VIEW Internal Schematic Ordering Information (Note 4) Part Number DMN601VK-7 Notes: Case SOT-563 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT-563 G1 D2 S1 K7K = Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September K7K YM S2 Date Code Key Year Code Month Code G2 D1 2005 2006 2007 2008 2009 2010 2011 2012 S T U V W X Y Z Jan 1 DMN601VK Document number: DS30655 Rev. 5 - 2 Feb 2 Mar 3 Apr 4 May 5 Jun 6 1 of 6 www.diodes.com Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D April 2015 © Diodes Incorporated DMN601VK Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Continuous Pulsed (Note 6) Units V V ID Value 60 ±20 305 800 Symbol Pd RJA Tj, TSTG Value 250 500 -65 to +150 Units mW °C/W °C mA Thermal Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Min Typ Max Unit BVDSS IDSS 60 250 500 100 V nA 1.0 1.6 2.5 V 2.0 3.0 Ω 1.4 ms V 50 25 5.0 pF pF pF IGSS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Symbol RDS (ON) |Yfs| VSD 0.5 284 Ciss Coss Crss nA Test Condition VGS = 0V, ID = 10µA VDS = 50V, VGS = 0V VGS = 10V, VDS = 0V VGS = 5V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 0.5A VGS = 4.5V, ID = 200mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VDS = 25V, VGS = 0V f = 1.0MHz 5. Device mounted on FR-4 PCB. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. DMN601VK Document number: DS30655 Rev. 5 - 2 2 of 6 www.diodes.com April 2015 © Diodes Incorporated ID, DRAIN CURRENT (A) DMN601VK VGS = 10V 8V 6V 5V 4V 3V 8V 6V 1.0 5V 0.8 4V 0.6 0.4 0.2 0 3V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2 10 VDS = 10V ID = 1mA RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE ( ) Pulsed 1.5 1 0.5 0 -50 -25 75 100 125 0 25 50 TCH, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 1 0.1 150 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 10 0 1 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN601VK Document number: DS30655 Rev. 5 - 2 3 of 6 www.diodes.com April 2015 © Diodes Incorporated RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE () IDR, REVERSE DRAIN CURRENT (A) DMN601VK VGS = 0V Pulsed TA = 125°C TA = 150°C TA = 85°C TA = 25°C TA = 0°C TA = -25°C TA = -55°C 0 |Y fs|, FORWARD TRANSFER ADMITTANCE (S) IDR, REVERSE DRAIN CURRENT (A) TCH, CHANNEL TEMPERATURE ( °C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature VGS = 10V TA= 25°C Pulsed VGS = 0V VGS = 10V Pulsed TA = 25°C TA = 150°C TA = -55°C TA = 85°C 1 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current DMN601VK Document number: DS30655 Rev. 5 - 2 4 of 6 www.diodes.com April 2015 © Diodes Incorporated DMN601VK Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A B C D G M K H SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. E Z E C G Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C 1.7 E 0.5 Y X DMN601VK Document number: DS30655 Rev. 5 - 2 5 of 6 www.diodes.com April 2015 © Diodes Incorporated DMN601VK IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com DMN601VK Document number: DS30655 Rev. 5 - 2 6 of 6 www.diodes.com April 2015 © Diodes Incorporated