WINNERJOIN BZX85C10 Zener diode Datasheet

RoHS
BZX85C2V7-BZX85C75
D
T
,. L
Zener diode
Features
1. High reliability
2. Low reverse current
3. Very sharp reverse characteristic
IC
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj=25℃
R
T
Parameter
Test Conditions
Power dissipation
Junction temperature
I=4mm TL≤25℃
O
N
Type
C
E
L
Storage temperature range
C
O
Symbol
Value
Unit
PV
1.3
W
Tj
175
℃
Tstg
-65~+175
℃
Symbol
Value
Unit
RthJA
110
K/W
Maximum Thermal Resistance
Tj=25℃
E
Parameter
Junction ambient
J
E
Test Conditions
I=4mm ,TL=constant
Electrical Characteristics
Tj=25℃
W
Parameter
Forward voltage
Test Conditions
Type
IF=200mA
WEJ ELECTRONIC CO.
Symbol
VF
Http:// www.wej.cn
Min
Typ
Max
Unit
1
V
E-mail:[email protected]
RoHS
BZX85C2V7-BZX85C75
Type
BZX85C
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
1)
VZnom
V
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
J
E
IZT
mA
80
80
80
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
10
8
8
8
8
6
6
4
4
4
4
4
4
for VZT and
1)
V
2.5~2.9
2.8~3.2
3.1~3.5
3.4~3.8
3.7~4.1
4.0~4.6
4.4~5.0
4.8~5.4
5.2~6.0
5.8~6.6
6.4~7.2
7.0~7.9
7.7~8.7
8.5~9.6
9.4~10.6
10.4~11.6
11.4~12.7
12.4~14.1
13.8~15.6
15.3~17.1
16.8~19.1
18.8~21.2
20.8~23.3
22.8~25.6
25.1~28.9
28~32
31~35
34~38
37~41
40~46
44~50
48~54
52~60
58~66
64~72
70~79
rzjT
Ω
<20
<20
<20
<20
<15
<13
<13
<10
<7
<4
<3.5
<3
<5
<5
<7
<8
<9
<10
<15
<15
<20
<24
<25
<25
<30
<30
<35
<40
<50
<50
<90
<115
<120
<125
<130
<135
Ω
<400
<400
<400
<500
<500
<500
<500
<500
<400
<300
<300
<200
<200
<200
<200
<300
<350
<400
<500
<500
<500
<600
<600
<600
<750
<1000
<1000
<1000
<1000
<1000
<1500
<1500
<2000
<2000
<2000
<2000
R
T
C
E
L
E
rzjK at
IZK
IR
mA
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
O
at
μA
<150
<100
<40
<20
<10
<3
<3
<1
<1
<1
<1
<1
<1
<1
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
VR
V
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
N
IC
C
D
T
,. L
TKVZ
%/K
-0.09~-0.06
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.06~-0.03
-0.05~+0.02
-0.02~+0.02
-0.05~+0.05
0.03~0.06
0.03~0.07
0.03~0.07
0.03~0.08
0.03~0.09
0.03~0.1
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
O
Tighter tolerances available request:
BZX85B… ±2% of VZnom
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
RoHS
BZX85C2V7-BZX85C75
D
T
,. L
RthJA – Therm. Resist. Junction/
Ambient (K/W)
Ptot –Total Power Dissipation (W)
Characteristics (Tj=25℃ unless otherwise specified)
IC
Tamb – Ambient Temperature(℃)
l – Lead Length (mm)
Figure2. Thermal Resistance vs. Lead Length
R
T
C
E
L
O
rz –Differential Z-Resistance (Ω)
CD –Diode Capacitance (pF)
Figure1.Total Power Dissipation vs. Ambient
Temperature
N
Vz-Z-Voltage (V)
Vz-Z-Voltage (V)
Zthp – Thermal Resistance for
Pulse Cond. (K/W)
Figure3. Diode Capacitance vs. Z-Voltage
J
E
C
O
Figure4.Differential Z-Resistance vs.Z-Voltage
E
W
tp –Pulse Length (ms)
Figure5. Thermal Response
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
RoHS
BZX85C2V7-BZX85C75
D
T
,. L
Dimensions in mm
Cathode identification
φ0.85 max.
Cathode
26 min.
4.5 max.
R
T
Standard Glass Case
JEDEC DO 41
J
E
O
Anode
O
N
IC
C
φ2.8 max.
26 min.
C
E
L
E
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]