ON BAT54CTT1G Dual series schottky barrier diode Datasheet

BAT54CT
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc
• S Prefix for Automotive and Other Applications Requiring Unique
•
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30 VOLT
DUAL COMMON CATHODE
SCHOTTKY BARRIER DIODES
3
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
SC−75
CASE 463
STYLE 3
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
225
1.8
mW
mW/°C
Rating
Thermal Resistance,
Junction-to-Ambient (Note 1)
Forward Current (DC)
RqJA
IF
Non−Repetitive Peak Forward
Current,
tp < 10 msec
IFSM
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
IFRM
1
ANODE
2
ANODE
3
CATHODE
°C/W
MARKING DIAGRAM
555
200 Max
2
mA
5CM G
G
mA
600
1
mA
300
Junction Temperature
TJ
−55 to 125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 board with minimum mounting pad.
5C
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
BAT54CTT1G
SC−75
(Pb−Free)
3,000 / Tape & Reel
SBAT54CTT1G
SC−75
(Pb−Free)
3,000 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 5
1
Publication Order Number:
BAT54CTT1/D
BAT54CT
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Symbol
Characteristic
Reverse Breakdown Voltage
(IR = 10 mA)
Min
Typ
Max
30
−
−
−
7.6
10
−
0.5
2.0
−
−
−
−
−
0.22
0.29
0.35
0.41
0.52
0.24
0.32
0.40
0.50
0.80
−
−
5.0
Unit
V(BR)R
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 25 V)
IR
Forward Voltage
(IF = 0.1 mA)
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 30 mA)
(IF = 100 mA)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
V
pF
mAdc
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
+10 V
2k
100 mH
0.1 mF
IF
tr
0.1 mF
tp
T
IF
trr
10%
T
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
90%
iR(REC) = 1 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAT54CT
100
IF, FORWARD CURRENT (mA)
1 25°C
85°C
10
1 50°C
1.0
25°C
0.1
0.0
−40°C
−55°C
0.2
0.3
0.4
0.1
0.5
VF, FORWARD VOLTAGE (VOLTS)
0.6
Figure 2. Forward Voltage
1000
IR, REVERSE CURRENT (mA)
TA = 150°C
100
TA = 125°C
10
1.0
TA = 85°C
0.1
0.01
TA = 25°C
0.001
0
5
15
25
10
20
VR, REVERSE VOLTAGE (VOLTS)
30
Figure 3. Leakage Current
CT, TOTAL CAPACITANCE (pF)
14
12
10
8
6
4
2
0
0
5
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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3
25
30
BAT54CT
PACKAGE DIMENSIONS
SC−75 / SOT−416
CASE 463
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−E−
2
3
b 3 PL
0.20 (0.008)
e
−D−
DIM
A
A1
b
C
D
E
e
L
HE
1
M
D
HE
C
0.20 (0.008) E
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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4
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BAT54CTT1/D
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