Freescale MRF9060NR1 Rf power field effect transistor n-channel enhancement-mode lateral mosfet Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF9060N
Rev. 13, 6/2009
RF Power Field Effect Transistor
MRF9060NR1
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common-source amplifier applications in 26 volt
base station equipment.
• Typical Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 18.0 dB
Efficiency — 40% (Two Tones)
IMD — - 31.5 dBc
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
945 MHz, 60 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
CASE 1265 - 09, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, + 15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
223
1.79
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
RθJC
0.56
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
C6 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
N - Channel Enhancement - Mode Lateral MOSFET
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9060NR1
1
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2
2.8
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 450 mAdc)
VGS(Q)
3
3.7
5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.3 Adc)
VDS(on)
—
0.21
0.4
Vdc
gfs
—
5.3
—
S
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
101
—
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
53
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.5
—
pF
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
17
18
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
37
40
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
- 31.5
- 28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
- 14.5
-9
dB
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
Gps
—
18
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
η
—
40
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
IMD
—
- 31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
IRL
—
- 12.5
—
dB
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 4 Adc)
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Off Characteristics
MRF9060NR1
2
RF Device Data
Freescale Semiconductor
B1
B2
+
+
C7
C6
L1
L2
C4
NOT RECOMMENDED FOR NEW DESIGN
RF
INPUT
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
VDD
+
+
C15
C16
C17
RF
OUTPUT
C9
DUT Z11
Z1
C14
Z12
Z13
Z14
Z15
Z16
Z17
C10
C11
C12
Z18
Z10
C13
C1
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.240″
0.240″
0.500″
0.100″
0.330″
0.120″
0.270″
0.240″
0.340″
C3
x 0.060″
x 0.060″
x 0.100″
x 0.270″
x 0.270″
x 0.270″
x 0.520″
x 0.520″
x 0.520″
C8
C5
Microstrip
Microstrip
Microstrip
x 0.080″, Taper
Microstrip
Microstrip
x 0.140″, Taper
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
0.060″
0.360″
0.060″
0.130″
0.300″
0.210″
0.600″
0.290″
0.340″
x 0.520″
x 0.270″
x 0.270″
x 0.060″
x 0.060″
x 0.060″
x 0.060″
x 0.060″
x 0.060″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic
Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short Ferrite Bead
2743019447
Fair - Rite
B2
Long Ferrite Bead
2743029446
Fair - Rite
C1, C7, C13, C14
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C2, C3, C11
0.8 - 8.0 Gigatrim Variable Capacitors
27291SL
Johanson
C4, C5
11 pF Chip Capacitors (MRF9060NR1)
10 pF Chip Capacitors (MRF9060NBR1)
ATC100B110JT500XT
ATC100B100JT500XT
ATC
C6, C15, C16
10 mF, 35 V Tantalum Chip Capacitors
T491D106K035AT
Kemet
C8, C9
10 pF Chip Capacitors
ATC100B100JT500XT
Newark
C10
3.9 pF Chip Capacitor
ATC100B3R9CT500XT
ATC
C12
1.7 pF Chip Capacitor
ATC100B1R7BT500XT
ATC
C17
220 mF Electrolytic Chip Capacitor
MCAX63V227M13X22
Multicomp
L1, L2
12.5 nH Inductors
A04T - 5
Coilcraft
RF - 35 - 0300
Taconic
Board Material
30 mil Glass
Teflon®,
εr = 2.55 Copper Clad, 2 oz Cu
NOT RECOMMENDED FOR NEW DESIGN
VGG
MRF9060NR1
RF Device Data
Freescale Semiconductor
3
C6
VGG
C17
VDD
B1
B2
L1
INPUT
C1
C2
C4
C3
C5
C15 C16
L2
WB1
WB2
CUT OUT AREA
NOT RECOMMENDED FOR NEW DESIGN
C14
C8
C9
OUTPUT
C10
C11
C12
C13
MRF9060M
MRF9060MB
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout
NOT RECOMMENDED FOR NEW DESIGN
C7
MRF9060NR1
4
RF Device Data
Freescale Semiconductor
50
Gps
40
VDD = 26 Vdc
Pout = 60 W (PEP)
IDQ = 450 mA
Two−Tone, 100 kHz Tone Spacing
16
15
35
−28
−30
14
IMD
−32
13
−34
12
11
930
935
940
945
950
955
−36
960
−10
−12
−14
−16
IRL, INPUT RETURN
LOSS (dB)
17
IMD, INTERMODULATION
DISTORTION (dBc)
G ps , POWER GAIN (dB)
45
η
IRL
−18
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
IMD, INTERMODULATION DISTORTION (dBc)
IDQ = 625 mA
G ps , POWER GAIN (dB)
18.5
500 mA
18
450 mA
17.5
275 mA
17
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
16.5
1
10
−15
−20
−25
IDQ = 275 mA
−30
−35
450 mA
−40
500 mA
−45
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
625 mA
−50
−55
100
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
−10
20
−30
3rd Order
−40
−50
Gps
18
G ps , POWER GAIN (dB)
VDD = 26 Vdc
IDQ = 450 mA
f1 = 945 MHz
f2 = 945.1 MHz
−20
60
5th Order
−60
7th Order
16
40
14
30
12
20
−80
VDD = 26 Vdc
IDQ = 450 mA
f = 945 MHz
η
10
−70
50
8
1
10
100
0.1
1
10
0
100
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
η, DRAIN EFFICIENCY (%)
19
IMD, INTERMODULATION DISTORTION (dBc)
NOT RECOMMENDED FOR NEW DESIGN
18
NOT RECOMMENDED FOR NEW DESIGN
19
η, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
MRF9060NR1
RF Device Data
Freescale Semiconductor
5
60
Gps
NOT RECOMMENDED FOR NEW DESIGN
G ps , POWER GAIN (dB)
18
40
η
16
20
14
0
VDD = 26 Vdc
IDQ = 450 mA
f1 = 945 MHz
f2 = 945.1 MHz
12
−20
IMD
−40
10
8
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency, and IMD versus Output Power
MTTF FACTOR (HOURS X AMPS2)
1011
1010
109
108
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
NOT RECOMMENDED FOR NEW DESIGN
20
IMD, INTERMODULATION DISTORTION (dBc)
η, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
MRF9060NR1
6
RF Device Data
Freescale Semiconductor
Zo = 2 Ω
f = 960 MHz
Zsource
f = 930 MHz
Zload
f = 960 MHz
VDD = 26 V, IDQ = 450 mA, Pout = 60 W PEP
f
MHz
Zsource
Ω
Zload
Ω
930
0.63 + j0.57
1.8 + j0.84
945
0.60 + j0.41
1.7 + j0.55
960
0.57 + j0.45
1.6 + j0.36
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
f = 930 MHz
Figure 10. Series Equivalent Source and Load Impedance
MRF9060NR1
RF Device Data
Freescale Semiconductor
7
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
PACKAGE DIMENSIONS
MRF9060NR1
8
RF Device Data
Freescale Semiconductor
MRF9060NR1
RF Device Data
Freescale Semiconductor
9
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
MRF9060NR1
10
RF Device Data
Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
12
Sept. 2008
Description
• Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.
• Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 8 - 10. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC
Standard Package Number.
• Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Added Product Documentation and Revision History, p. 11
13
June 2009
• Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
• Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software, p. 11
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages
MRF9060NR1
RF Device Data
Freescale Semiconductor
11
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140
Fax: +1 - 303 - 675 - 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2008-2009. All rights reserved.
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
How to Reach Us:
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
MRF9060NR1
Document Number: MRF9060N
Rev. 13, 6/2009
12
RF Device Data
Freescale Semiconductor
Similar pages