AP9926GM-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D2 ▼ Capable of 2.5V Gate Drive D1 D1 ▼ Surface Mount Package BVDSS 20V RDS(ON) 30mΩ ID G2 6A S2 ▼ RoHS Compliant & Halogen-Free SO-8 S1 G1 Description D2 D1 AP9926 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G2 G1 S2 S1 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Drain Current, VGS @ 4.5V 3 Drain Current, VGS @ 4.5V 3 1 Rating Units 20 V +12 V 6 A 4.8 A 26 A IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 2 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 62.5 ℃/W 1 201501125 AP9926GM-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. 20 - - V VGS=4.5V, ID=6A - - 30 mΩ VGS=2.5V, ID=4A - - 45 mΩ VGS=0V, ID=250uA Static Drain-Source On-Resistance 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA - - 1.2 V gfs Forward Transconductance VDS=10V, ID=6A - 6 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 25 uA Drain-Source Leakage Current (Tj=70 C) VDS=20V ,VGS=0V - - 250 uA Gate-Source Leakage - - +100 nA o IGSS VGS=+12V, VDS=0V 2 ID=6A - 11 17.6 nC Gate-Source Charge VDS=16V - 1.1 - nC Gate-Drain ("Miller") Charge VGS=4.5V - 4.1 - nC VDS=10V - 4.2 - ns Qg Total Gate Charge Qgs Qgd 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 9 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 23 - ns tf Fall Time RD=10Ω - 3.5 - ns Ciss Input Capacitance VGS=0V - 570 910 pF Coss Output Capacitance VDS=20V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF Rg Gate Resistance f=1.0MHz - 1.6 2.4 Ω Min. Typ. Max. Units IS=1.7A, VGS=0V - - 1.2 V IS=6A, VGS=0V, - 21 - ns dI/dt=100A/µs - 14 - nC Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9926GM-HF 30 30 T A = 150 C V G =2.0V 20 15 10 5 V G = 2.0 V 20 15 10 5 0 0 0 1 2 3 0 1 V DS , Drain-to-Source Voltage (V) 2 3 4 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 36 I D =6A V G = 4.5V ID=4A T A =25 o C 1.4 Normalized RDS(ON) 32 RDS(ON) (mΩ ) 5.0V 4.5 V 3.5 V 2.5 V 25 ID , Drain Current (A) 25 ID , Drain Current (A) o 5.0V 4.5 V 3.5 V 2.5 V T A =25 o C 28 24 1.2 1.0 0.8 20 0.6 16 0 2 4 6 8 -50 10 100 150 Fig 4. Normalized On-Resistance v.s. Temperature 1.4 8 1.2 Normalized VGS(th) 10 6 IS(A) 50 T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage o o T j =150 C 0 o V GS , Gate-to-Source Voltage (V) T j =25 C 4 2 1.0 0.8 0.6 0 0.4 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9926GM-HF 12 f=1.0MHz 1000 ID=6A C oss V DS = 10 V V DS = 12 V V DS =1 6 V 8 C (pF) VGS , Gate to Source Voltage (V) 10 6 C iss 100 C rss 4 2 10 0 0 10 20 1 30 5 Fig 7. Gate Charge Characteristics 13 17 21 25 Fig 8. Typical Capacitance Characteristics 100 Operation in this area limited by RDS(ON) Normalized Thermal Response (R thja) 1 10 100us 1ms ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 1 10ms 100ms 1s 0.1 T A =25 o C Single Pulse DC Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W 0.01 0.001 0.01 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG ID , Drain Current (A) V DS =5V T j =25 o C T j =150 o C QG 20 4.5V QGS QGD 10 Charge Q 0 0 1 2 3 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 AP9926GM-HF MARKING INFORMATION Part Number 9926GM YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5