PD-94078A IRF7807VD1 • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier • 100% RG Tested FETKY MOSFET / SCHOTTKY DIODE 1 8 K/D A/S 2 7 K/D A/S 3 6 K/D G 4 5 K/D D A/S Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. Top View SO-8 DEVICE CHARACTERISTICS IRF7807VD1 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave soldering techniques. RDS(on) 17mΩ QG 9.5nC Qsw 3.4nC Qoss 12nC Absolute Maximum Ratings Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Output Current (VGS ≥ 4.5V) Pulsed Drain Current Symbol VDS VGS 25°C 70°C c 25°C Power Dissipation e 70°C Schottky and Body Diode Average Forward Current Junction & Storage Temperature Range f 25°C 70°C ID IDM PD IF (AV) TJ , TSTG Max 30 ±20 Units V 8.3 6.6 66 A 2.5 1.6 3.5 2.2 -55 to 150 W °C Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead h www.irf.com eh Symbol RθJA RθJL Typ ––– ––– Max 50 20 Units °C/W 1 11/12/03 IRF7807VD1 Electrical Characteristics Parameter Drain-Source Breakdown Voltage Symbol Min BVDSS 30 Static Drain-Source On-Resistance RDS(on) Gate Threshold Voltage VGS(th) Typ ––– ––– 17 Max Units Conditions ––– V VGS = 0V, ID = 250µA 25 mΩ VGS = 4.5V, ID = 7.0A d VDS = VGS, ID = 250µA 1.0 ––– 3.0 V ––– ––– 100 µA VDS = 30V, VGS = 0V ––– 20 µA VDS = 24V, VGS = 0V 2.0 mA VDS = 24V, VGS = 0V, TJ = 100°C Drain-Source Leakage Current IDSS ––– ––– ––– Gate-Source Leakage Current IGSS ––– ––– ±100 Total Gate Charge* QG ––– 9.5 14 Pre-Vth Gate-Source Charge QGS1 ––– 2.3 ––– Post-Vth Gate-Source Charge QGS2 ––– 1.0 ––– Gate-to-Drain Charge QGD ––– 2.4 ––– Switch Charge (Qgs2 + Qgd) QSW ––– 3.4 5.2 Output Charge* QOSS ––– 12 16.8 Gate Resistance RG 0.9 ––– 2.8 Turn-On Delay Time td(on) ––– 6.3 ––– Rise Time tr ––– 1.2 ––– Turn-Off Delay Time td(off) ––– 11 ––– Fall Time tf ––– 2.2 ––– Symbol Min VSD ––– Typ Max Units ––– 0.5 nA VGS = ± 20V VDS = 4.5V ID = 7.0A nC VDS = 16V VDS = 16V, VGS = 0 Ω VDD = 16V, ID = 7.0V ns VGS = 5V, RG = 2Ω Resistive Load Diode Characteristics Parameter Diode Forward Voltage Reverse Recovery Time f Reverse Recovery Charge f V Conditions TJ = 25°C, IS = 1.0A ,VGS = 0V d d T = 125°C, IS = 1.0A, VGS = OV ––– ––– 0.39 trr ––– 51 ––– ns di/dt = 700A/µs VDD = 16V, VGS = 0V, ID = 15A Qrr ––– 51 ––– nC TJ = 25°C, IS = 7.0A ,VDS = 16V di/dt = 100A/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board 50% Duty Cycle, Rectangular Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 7.0A. Rθ is measured at TJ approximately 90°C * Device are 100% tested to these parameters. 2 www.irf.com IRF7807VD1 Power MOSFET Selection for DC/DC Converters 4 Drain Current Control FET t2 t3 t1 VGTH t0 2 QGD Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput Gate Voltage QGS2 Power losses in the control switch Q1 are given by; 1 QGS1 Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Drain Voltage This can be expanded and approximated by; Ploss = (Irms 2 × Rds(on ) ) Qgs 2 Qgd +I × × Vin × f + I × × Vin × f ig ig + (Qg × Vg × f ) + Qoss × Vin × f 2 This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 1. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached (t1) and the time the drain current rises to Idmax (t2) at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure 2 shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitance’s Cds and Cdg when multiplied by the power supply input buss voltage. www.irf.com Figure 1: Typical MOSFET switching waveform Synchronous FET The power loss equation for Q2 is approximated by; * Ploss = Pconduction + Pdrive + Poutput ( 2 Ploss = Irms × Rds(on) ) + (Qg × Vg × f ) Q + oss × Vin × f + (Qrr × Vin × f ) 2 *dissipated primarily in Q1. 3 IRF7807VD1 For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on. Spice model for IRF7807V can be downloaded in machine readable format at www.irf.com. Figure 2: Qoss Characteristic Typical Mobile PC Application The performance of these new devices has been tested in circuit and correlates well with performance predictions generated by the system models. An advantage of this new technology platform is that the MOSFETs it produces are suitable for both control FET and synchronous FET applications. This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and Fig 4). In these applications the same MOSFET IRF7807V was used for both the control FET (Q1) and the synchronous FET (Q2). This provides a highly effective cost/performance solution. 5.0V Supply : Q1=Q2= IRF7807V 93 95 92 94 91 93 90 92 Efficiency (%) Efficiency (%) 3.3V Supply : Q1=Q2= IRF7807V 89 88 87 86 Vin=24V 85 Vin=14V 84 Vin=10V 90 Vin=24V 89 Vin=14V 88 Vin=10V 87 86 83 1 2 3 Load current (A) Figure 3 4 91 4 5 1 2 3 4 5 Load current (A) Figure 4 www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 7.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 RDS(on) , Drain-to -Source On Resistance ( Ω) IRF7807VD1 0.030 0.025 0.020 ID = 7.0A 0.015 0.010 80 100 120 140 160 2.0 TJ , Junction Temperature ( °C) 6.0 8.0 10.0 12.0 14.0 16.0 VGS, Gate -to -Source Voltage (V) Fig 5. Normalized On-Resistance Vs. Temperature Fig 7. On-Resistance Vs. Gate Voltage 70 60 VGS TOP 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V 50 40 VGS 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP IS, Source-to-Drain Current (A) IS, Source-to-Drain Current (A) 4.0 30 20 0.0V 10 380µs PULSE WIDTH Tj = 25°C 60 50 40 30 20 10 380µS PULSE WIDTH 0.0V Tj = 150°C 0 0 0 0.2 0.4 0.6 0.8 1 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Reverse Output Characteristics www.irf.com 0 0.2 0.4 0.6 0.8 1 VSD, Source-to-Drain Voltage (V) Fig 8. Typical Reverse Output Characteristics 5 IRF7807VD1 Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 t1 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient VGS , Gate-to-Source Voltage (V) 5 ID = 7.0A VDS = 16V 4 3 2 1 0 0 2 4 6 8 10 12 QG , Total Gate Charge (nC) Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 6 www.irf.com IRF7807VD1 MOSFET , Body Diode & Schottky Diode Characteristics 100 100 Reverse Current - I R ( mA ) 10 Tj = 125°C Instantaneous Forward Current - I F ( A ) Tj = 25°C 10 Tj = 150°C 125°C 1 100°C 0.1 75°C 50°C 0.01 25°C 0.001 0.0001 0 5 10 15 20 25 30 Reverse Voltage - V R (V) Fig. 12 - Typical Values of Reverse Current Vs. Reverse Voltage 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage Drop - V F ( V ) Fig. 11 - Typical Forward Voltage Drop Characteristics www.irf.com 7 IRF7807VD1 SO-8 Package Details DIM D -B- 5 8 E -A- 1 7 2 3 e 6X 5 H 0.25 (.010) 4 M A M θ e1 K x 45° θ A -C- 0.10 (.004) B 8X 0.25 (.010) A1 L 8X 6 C 8X M C A S B S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. MILLIMETERS MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 5 6 INCHES MIN e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 K .011 .019 0.28 5.80 0.48 6.20 L 0.16 .050 0.41 1.27 θ 0° 8° 0° 8° RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X SO-8 Part Marking 8 www.irf.com IRF7807VD1 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. This product has been designed and qualified for the commercial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/03 www.irf.com 9